The Experts below are selected from a list of 9024 Experts worldwide ranked by ideXlab platform
Zhenhua Ni - One of the best experts on this subject based on the ideXlab platform.
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strong photoluminescence enhancement of mos2 through Defect engineering and oxygen bonding
ACS Nano, 2014Co-Authors: Zilu Wang, Wenhui Wang, Zheng Liang, Yan Lu, Qian Chen, Daowei He, Feng Miao, Xinran Wang, Jinlan Wang, Zhenhua NiAbstract:We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through Defect engineering and oxygen bonding. Micro-PL and Raman images clearly reveal that the PL enhancement occurs at Cracks/Defects formed during high-temperature annealing. The PL enhancement at Crack/Defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include the following: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of nonradiative recombination of excitons at Defect sites, which was verified by low-temperature PL measurements. First-principle calculations reveal a strong binding energy of ∼2.395 eV for an oxygen molecule adsorbed on a S vacancy of MoS2. The chemically adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physically adsorbed oxygen on an ideal MoS2 surface. We also demonstrate that the Defect enginee...
Zilu Wang - One of the best experts on this subject based on the ideXlab platform.
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strong photoluminescence enhancement of mos2 through Defect engineering and oxygen bonding
ACS Nano, 2014Co-Authors: Zilu Wang, Wenhui Wang, Zheng Liang, Yan Lu, Qian Chen, Daowei He, Feng Miao, Xinran Wang, Jinlan Wang, Zhenhua NiAbstract:We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through Defect engineering and oxygen bonding. Micro-PL and Raman images clearly reveal that the PL enhancement occurs at Cracks/Defects formed during high-temperature annealing. The PL enhancement at Crack/Defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include the following: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of nonradiative recombination of excitons at Defect sites, which was verified by low-temperature PL measurements. First-principle calculations reveal a strong binding energy of ∼2.395 eV for an oxygen molecule adsorbed on a S vacancy of MoS2. The chemically adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physically adsorbed oxygen on an ideal MoS2 surface. We also demonstrate that the Defect enginee...
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strong photoluminescence enhancement of mos2 through Defect engineering and oxygen bonding
arXiv: Materials Science, 2014Co-Authors: Haiyan Nan, Zilu Wang, Wenhui Wang, Zheng Liang, Qian Chen, Feng Miao, Xinran Wang, Pingheng Tan, Jinlan WangAbstract:We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through Defect engineering and oxygen bonding. Micro- PL and Raman images clearly reveal that the PL enhancement occurs at Cracks/Defects formed during high temperature vacuum annealing. The PL enhancement at Crack/Defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of non-radiative recombination of excitons at Defect sites as verified by low temperature PL measurements. First principle calculations reveal a strong binding energy of ~2.395 eV for oxygen molecule adsorbed on an S vacancy of MoS2. The chemical adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physical adsorbed oxygen on ideal MoS2 surface. We also demonstrate that the Defect engineering and oxygen bonding could be easily realized by oxygen plasma irradiation. X-ray photoelectron spectroscopy further confirms the formation of Mo-O bonding. Our results provide a new route for modulating the optical properties of two dimensional semiconductors. The strong and stable PL from Defects sites of MoS2 may have promising applications in optoelectronic devices.
Jinlan Wang - One of the best experts on this subject based on the ideXlab platform.
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strong photoluminescence enhancement of mos2 through Defect engineering and oxygen bonding
ACS Nano, 2014Co-Authors: Zilu Wang, Wenhui Wang, Zheng Liang, Yan Lu, Qian Chen, Daowei He, Feng Miao, Xinran Wang, Jinlan Wang, Zhenhua NiAbstract:We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through Defect engineering and oxygen bonding. Micro-PL and Raman images clearly reveal that the PL enhancement occurs at Cracks/Defects formed during high-temperature annealing. The PL enhancement at Crack/Defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include the following: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of nonradiative recombination of excitons at Defect sites, which was verified by low-temperature PL measurements. First-principle calculations reveal a strong binding energy of ∼2.395 eV for an oxygen molecule adsorbed on a S vacancy of MoS2. The chemically adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physically adsorbed oxygen on an ideal MoS2 surface. We also demonstrate that the Defect enginee...
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strong photoluminescence enhancement of mos2 through Defect engineering and oxygen bonding
arXiv: Materials Science, 2014Co-Authors: Haiyan Nan, Zilu Wang, Wenhui Wang, Zheng Liang, Qian Chen, Feng Miao, Xinran Wang, Pingheng Tan, Jinlan WangAbstract:We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through Defect engineering and oxygen bonding. Micro- PL and Raman images clearly reveal that the PL enhancement occurs at Cracks/Defects formed during high temperature vacuum annealing. The PL enhancement at Crack/Defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of non-radiative recombination of excitons at Defect sites as verified by low temperature PL measurements. First principle calculations reveal a strong binding energy of ~2.395 eV for oxygen molecule adsorbed on an S vacancy of MoS2. The chemical adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physical adsorbed oxygen on ideal MoS2 surface. We also demonstrate that the Defect engineering and oxygen bonding could be easily realized by oxygen plasma irradiation. X-ray photoelectron spectroscopy further confirms the formation of Mo-O bonding. Our results provide a new route for modulating the optical properties of two dimensional semiconductors. The strong and stable PL from Defects sites of MoS2 may have promising applications in optoelectronic devices.
Xinran Wang - One of the best experts on this subject based on the ideXlab platform.
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strong photoluminescence enhancement of mos2 through Defect engineering and oxygen bonding
ACS Nano, 2014Co-Authors: Zilu Wang, Wenhui Wang, Zheng Liang, Yan Lu, Qian Chen, Daowei He, Feng Miao, Xinran Wang, Jinlan Wang, Zhenhua NiAbstract:We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through Defect engineering and oxygen bonding. Micro-PL and Raman images clearly reveal that the PL enhancement occurs at Cracks/Defects formed during high-temperature annealing. The PL enhancement at Crack/Defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include the following: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of nonradiative recombination of excitons at Defect sites, which was verified by low-temperature PL measurements. First-principle calculations reveal a strong binding energy of ∼2.395 eV for an oxygen molecule adsorbed on a S vacancy of MoS2. The chemically adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physically adsorbed oxygen on an ideal MoS2 surface. We also demonstrate that the Defect enginee...
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strong photoluminescence enhancement of mos2 through Defect engineering and oxygen bonding
arXiv: Materials Science, 2014Co-Authors: Haiyan Nan, Zilu Wang, Wenhui Wang, Zheng Liang, Qian Chen, Feng Miao, Xinran Wang, Pingheng Tan, Jinlan WangAbstract:We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through Defect engineering and oxygen bonding. Micro- PL and Raman images clearly reveal that the PL enhancement occurs at Cracks/Defects formed during high temperature vacuum annealing. The PL enhancement at Crack/Defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of non-radiative recombination of excitons at Defect sites as verified by low temperature PL measurements. First principle calculations reveal a strong binding energy of ~2.395 eV for oxygen molecule adsorbed on an S vacancy of MoS2. The chemical adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physical adsorbed oxygen on ideal MoS2 surface. We also demonstrate that the Defect engineering and oxygen bonding could be easily realized by oxygen plasma irradiation. X-ray photoelectron spectroscopy further confirms the formation of Mo-O bonding. Our results provide a new route for modulating the optical properties of two dimensional semiconductors. The strong and stable PL from Defects sites of MoS2 may have promising applications in optoelectronic devices.
Wenhui Wang - One of the best experts on this subject based on the ideXlab platform.
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strong photoluminescence enhancement of mos2 through Defect engineering and oxygen bonding
ACS Nano, 2014Co-Authors: Zilu Wang, Wenhui Wang, Zheng Liang, Yan Lu, Qian Chen, Daowei He, Feng Miao, Xinran Wang, Jinlan Wang, Zhenhua NiAbstract:We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through Defect engineering and oxygen bonding. Micro-PL and Raman images clearly reveal that the PL enhancement occurs at Cracks/Defects formed during high-temperature annealing. The PL enhancement at Crack/Defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include the following: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of nonradiative recombination of excitons at Defect sites, which was verified by low-temperature PL measurements. First-principle calculations reveal a strong binding energy of ∼2.395 eV for an oxygen molecule adsorbed on a S vacancy of MoS2. The chemically adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physically adsorbed oxygen on an ideal MoS2 surface. We also demonstrate that the Defect enginee...
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strong photoluminescence enhancement of mos2 through Defect engineering and oxygen bonding
arXiv: Materials Science, 2014Co-Authors: Haiyan Nan, Zilu Wang, Wenhui Wang, Zheng Liang, Qian Chen, Feng Miao, Xinran Wang, Pingheng Tan, Jinlan WangAbstract:We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through Defect engineering and oxygen bonding. Micro- PL and Raman images clearly reveal that the PL enhancement occurs at Cracks/Defects formed during high temperature vacuum annealing. The PL enhancement at Crack/Defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of non-radiative recombination of excitons at Defect sites as verified by low temperature PL measurements. First principle calculations reveal a strong binding energy of ~2.395 eV for oxygen molecule adsorbed on an S vacancy of MoS2. The chemical adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physical adsorbed oxygen on ideal MoS2 surface. We also demonstrate that the Defect engineering and oxygen bonding could be easily realized by oxygen plasma irradiation. X-ray photoelectron spectroscopy further confirms the formation of Mo-O bonding. Our results provide a new route for modulating the optical properties of two dimensional semiconductors. The strong and stable PL from Defects sites of MoS2 may have promising applications in optoelectronic devices.
