The Experts below are selected from a list of 2553 Experts worldwide ranked by ideXlab platform
Munehiro Tada - One of the best experts on this subject based on the ideXlab platform.
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low power Crossbar Switch with two varistor selected complementary atom Switch 2v 1cas via Switch for nonvolatile fpga
IEEE Transactions on Electron Devices, 2019Co-Authors: Naoki Banno, Noriyuki Iguchi, Toshitsugu Sakamoto, Hidetoshi Onodera, Hiroyuki Ochi, K. Okamoto, Masanori Hashimoto, Tadahiko Sugibayashi, Munehiro TadaAbstract:A nonvolatile and programmable routing Switch featuring two-varistor selected complementary atom Switch (2V-1CAS also known as via-Switch) is evaluated. The a-Si/SiN/a-Si varistor as a selector for the atom Switch shows superior nonlinear current–voltage characteristics with high selectivity of ~105, which originates from the staircase barrier height in the layers. The two control lines connected to the varistors realize multiple fan-outs of the Crossbar Switch without select transistors. The $50\,\,\sf \times20$ Crossbar Switch block is demonstrated, where the atom Switch is placed at each cross point and programmed through the varistors. The developed via-Switch Crossbar Switch is a strong candidate for achieving energy-efficient nonvolatile field-programmable gate array in the Internet-of-Things applications.
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characterization of chalcogenide selectors for Crossbar Switch used in nonvolatile fpga
IEEE Silicon Nanoelectronics Workshop, 2019Co-Authors: Hideaki Numata, Naoki Banno, Noriyuki Iguchi, Toshitsugu Sakamoto, Hiromitsu Hada, K. Okamoto, Masanori Hashimoto, Tadahiko Sugibayashi, Munehiro TadaAbstract:Sputter deposited Ge x Se 1−x films are characterized, prior to device fabrication for a selector. A Se-rich film has GeSe 4/2 tetrahedral structure and higher crystallization temperature than Ge-rich films. Printed Ag-paste electrodes are used for I-V measurement and an amorphous Se-rich Ge x Se 1−x film shows the good Switching property for the selector with an on/off ratio of 4.8 × 104.
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a novel two varistors a si sin a si selected complementary atom Switch 2v 1cas for nonvolatile Crossbar Switch with multiple fan outs
International Electron Devices Meeting, 2015Co-Authors: Naoki Banno, Munehiro Tada, Noriyuki Iguchi, Toshitsugu Sakamoto, Makoto Miyamura, Yukihide Tsuji, Hiromitsu Hada, Hiroyuki Ochi, K. Okamoto, Hidetoshi OnoderaAbstract:A nonvolatile and compact Switch realizing multiple fan-outs of a Crossbar Switch for programmable logic devices (PLDs) has been newly developed by using two-varistors selected complementary atom Switch (2V-1CAS). The two control lines connected to the varistors realize the accurate programming of each cross-point without select transistors. The novel nitrogen-modulated, TiN/a-Si/SiN/a-Si/TiN varistor shows superior nonlinear (NL) characteristic of ∼105, which are successfully stacked on the top of CAS with dual-hard mask (DHM) process. The developed 2V-1CAS (18F2) gives a promising Switch block (SB) used for energy-efficient, nonvolatile PLDs.
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polymer solid electrolyte Switch embedded on cmos for nonvolatile Crossbar Switch
IEEE Transactions on Electron Devices, 2011Co-Authors: Munehiro Tada, Naoki Banno, Toshitsugu Sakamoto, Makoto Miyamura, K. Okamoto, Hiromitsu HadaAbstract:A polymer solid-electrolyte (PSE) Switch has been embedded in a 90-nm-node CMOS featuring a forming-less programming and extremely high on/off ratio of 105. A fast programming of 10 ns is also demonstrated for 50-nmΦ 1 k-b array by introducing the PSE Switches integrated with a fully logic compatible process below 350°C. A high free volume in the PSE is supposed to result in the smooth formation of the Cu bridge without destroying the electrolyte, thereby also resulting in forming-less programming and high breakdown voltage. High disturbance reliability (T50; 50% fail) is extracted to be over 10 years at operation condition. The improved Switching characteristics enable us to accurately program the Crossbar circuit in a practical scale (32 × 32) without cell transistors. The developed Switch is a strong candidate for realizing a low-power and low-cost nonvolatile programmable logic.
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nonvolatile Crossbar Switch using hbox tio _ x hbox tasio _ y solid electrolyte
IEEE Transactions on Electron Devices, 2010Co-Authors: Munehiro Tada, Naoki Banno, Toshitsugu Sakamoto, Hiromitsu Hada, Masakazu Aono, N KasaiAbstract:A nonvolatile Crossbar Switch using a dual-layered TiOx/TaSiOy solid electrolyte, "NanoBridge," has been developed. NanoBridge is scalable to 50 nm and programmed at low voltage while keeping a low ON-resistance. The high compatibility with a back-end-of-line processing for CMOS integrated circuits is achieved by using the dual-layered TiOx/TaSiOy solid electrolyte, in which a barrier (Ti) is inserted on Cu and changes to an oxide during the subsequent process step. TiOx has the double role of preventing Cu oxidation during TaSiOy deposition and acting as a solid electrolyte itself. A resistive-change characteristic is investigated in terms of the inserted barrier dependence. At an optimal barrier insertion, the integrated Switch shows bipolar Switching characteristics with a high OFF-/ON-resistance ratio of 106. The developed device is applied to a 4 × 4 Crossbar Switch integrated with the CMOS circuit. The Crossbar Switch is configured without select transistors and transfers signals properly.
Naoki Banno - One of the best experts on this subject based on the ideXlab platform.
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low power Crossbar Switch with two varistor selected complementary atom Switch 2v 1cas via Switch for nonvolatile fpga
IEEE Transactions on Electron Devices, 2019Co-Authors: Naoki Banno, Noriyuki Iguchi, Toshitsugu Sakamoto, Hidetoshi Onodera, Hiroyuki Ochi, K. Okamoto, Masanori Hashimoto, Tadahiko Sugibayashi, Munehiro TadaAbstract:A nonvolatile and programmable routing Switch featuring two-varistor selected complementary atom Switch (2V-1CAS also known as via-Switch) is evaluated. The a-Si/SiN/a-Si varistor as a selector for the atom Switch shows superior nonlinear current–voltage characteristics with high selectivity of ~105, which originates from the staircase barrier height in the layers. The two control lines connected to the varistors realize multiple fan-outs of the Crossbar Switch without select transistors. The $50\,\,\sf \times20$ Crossbar Switch block is demonstrated, where the atom Switch is placed at each cross point and programmed through the varistors. The developed via-Switch Crossbar Switch is a strong candidate for achieving energy-efficient nonvolatile field-programmable gate array in the Internet-of-Things applications.
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characterization of chalcogenide selectors for Crossbar Switch used in nonvolatile fpga
IEEE Silicon Nanoelectronics Workshop, 2019Co-Authors: Hideaki Numata, Naoki Banno, Noriyuki Iguchi, Toshitsugu Sakamoto, Hiromitsu Hada, K. Okamoto, Masanori Hashimoto, Tadahiko Sugibayashi, Munehiro TadaAbstract:Sputter deposited Ge x Se 1−x films are characterized, prior to device fabrication for a selector. A Se-rich film has GeSe 4/2 tetrahedral structure and higher crystallization temperature than Ge-rich films. Printed Ag-paste electrodes are used for I-V measurement and an amorphous Se-rich Ge x Se 1−x film shows the good Switching property for the selector with an on/off ratio of 4.8 × 104.
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50 20 Crossbar Switch block csb with two varistors a si sin a si selected complementary atom Switch for a highly dense reconfigurable logic
International Electron Devices Meeting, 2016Co-Authors: Naoki Banno, Noriyuki Iguchi, Toshitsugu Sakamoto, Hiromitsu Hada, Hidetoshi Onodera, Hiroyuki Ochi, K. Okamoto, Masanori Hashimoto, M Tilda, Tadahiko SugibayashiAbstract:A large scale, 50×20 Crossbar Switch block (CSB) is newly developed for a nonvolatile, highly-dense reconfigurable logic. A compact two-varistors selected complementary atom Switch (a.k.a. via-Switch) is placed at each cross-point, in which the two control lines connected to the varistors can realize the multiple fan-outs without select transistors. The improved a-Si/SiN/a-Si varistor with a novel triple layered SiN shows superior nonlinearity (NL) of 1.1×105 with J max =1.63MA/cm2 while keeping very low static power of 0.2μW for the CSB. The developed CSB is also applicable for nonvolatile configuration memory for look up tables (LUTs) as well as routing Switches used in low power reconfigurable logic.
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a novel two varistors a si sin a si selected complementary atom Switch 2v 1cas for nonvolatile Crossbar Switch with multiple fan outs
International Electron Devices Meeting, 2015Co-Authors: Naoki Banno, Munehiro Tada, Noriyuki Iguchi, Toshitsugu Sakamoto, Makoto Miyamura, Yukihide Tsuji, Hiromitsu Hada, Hiroyuki Ochi, K. Okamoto, Hidetoshi OnoderaAbstract:A nonvolatile and compact Switch realizing multiple fan-outs of a Crossbar Switch for programmable logic devices (PLDs) has been newly developed by using two-varistors selected complementary atom Switch (2V-1CAS). The two control lines connected to the varistors realize the accurate programming of each cross-point without select transistors. The novel nitrogen-modulated, TiN/a-Si/SiN/a-Si/TiN varistor shows superior nonlinear (NL) characteristic of ∼105, which are successfully stacked on the top of CAS with dual-hard mask (DHM) process. The developed 2V-1CAS (18F2) gives a promising Switch block (SB) used for energy-efficient, nonvolatile PLDs.
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polymer solid electrolyte Switch embedded on cmos for nonvolatile Crossbar Switch
IEEE Transactions on Electron Devices, 2011Co-Authors: Munehiro Tada, Naoki Banno, Toshitsugu Sakamoto, Makoto Miyamura, K. Okamoto, Hiromitsu HadaAbstract:A polymer solid-electrolyte (PSE) Switch has been embedded in a 90-nm-node CMOS featuring a forming-less programming and extremely high on/off ratio of 105. A fast programming of 10 ns is also demonstrated for 50-nmΦ 1 k-b array by introducing the PSE Switches integrated with a fully logic compatible process below 350°C. A high free volume in the PSE is supposed to result in the smooth formation of the Cu bridge without destroying the electrolyte, thereby also resulting in forming-less programming and high breakdown voltage. High disturbance reliability (T50; 50% fail) is extracted to be over 10 years at operation condition. The improved Switching characteristics enable us to accurately program the Crossbar circuit in a practical scale (32 × 32) without cell transistors. The developed Switch is a strong candidate for realizing a low-power and low-cost nonvolatile programmable logic.
Akhilesh S P Khope - One of the best experts on this subject based on the ideXlab platform.
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pam4 transmission experiment and scalability simulations on multi wavelength selective Crossbar Switch
Conference on Lasers and Electro-Optics, 2021Co-Authors: Akhilesh S P Khope, Andrew M Netherton, Clint L Schow, Zeyu Zhang, Songtao Liu, Rebecca L Hwang, Aaron Wissing, Jesus Perez, Franklin Tang, Roger HelkeyAbstract:We demonstrate a multi-wavelength selective Crossbar Switch with up to two wavelength Switching capability per crosspoint. The Switch has a mean path loss of 2.43 dB. We demonstrate an error free high speed PAM 4 transmission at 111.16 Gbps. We also report bounds on the port count of the Switch.
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a scalable multicast hybrid broadband Crossbar wavelength selective Switch for datacenters
IEEE Annual Computing and Communication Workshop and Conference, 2021Co-Authors: Akhilesh S P Khope, A A M Saleh, Rod C Alferness, Roger Helkey, Songtao Liu, John E BowersAbstract:We present a new Switching architecture that is wavelength selective and can multicast. We compare the Switch loss, number of elements and crosstalk with multi-wavelength selective Crossbar Switch. We report reduction in number of elements of 50%, reduced loss and a similar crosstalk as compared with multi-wavelength selective Crossbar Switch.
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scalable multicast hybrid broadband Crossbar wavelength selective Switch proposal and analysis
Optics Letters, 2021Co-Authors: Akhilesh S P Khope, A A M Saleh, Rod C Alferness, Roger Helkey, Songtao Liu, Sairaj Khope, John E BowersAbstract:In this Letter, we present a new hybrid broadband-Crossbar Switching network that can Switch multiple wavelengths on demand and can also multicast. This Switch fabric is an improvement over our previous design in both Switch footprint and power consumption, as it reduces the number of Switching elements by approximately 50%. We compare the Switch loss and crosstalk with that of a multiwavelength selective Crossbar Switch. We also comment on fabrication tolerance of second-order ring resonators based on experimental results of 64 second-order ring resonators, and more than 250 heaters.
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multi wavelength selective Crossbar Switch
Optics Express, 2019Co-Authors: Akhilesh S P Khope, Andrew M Netherton, Mitra Saeidi, Yuan Liu, Zeyu Zhang, Yujie Xia, Garey Fleeman, Alexander Spott, Sergio Pinna, Clint L SchowAbstract:Here we demonstrate an 8x4 multi-wavelength selective ring resonator based Crossbar Switch matrix implemented in a 220-nm silicon photonics foundry for interconnecting electronic packet Switches in scalable data centers. This Switch design can dynamically assign up to two wavelength channels for any port-port connection, providing almost full connectivity with significant reduction in latency, cost and complexity. The Switch unit cell insertion loss was measured at 0.8 dB, with an out-of-band rejection of 32 dB at 400 GHz channel separation. All the ring resonator heaters were thermally tuned, with heaters controlled by a custom 64-channel DAC driver. Detailed measurements on the whole Switch showed standard deviation of 2 dB in losses across different paths, standard deviation of 0.33 nm in resonant wavelength and standard deviation of 0.01 nm/mW in ring heater tuning efficiency. Data transmission experiments at 40 Gbps showed negligible penalty due to crosstalk paths through the Switch.
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elastic wdm optoelectronic Crossbar Switch with on chip wavelength control
Advanced Photonics 2017 (IPR NOMA Sensors Networks SPPCom PS) (2017) paper PTh1D.3, 2017Co-Authors: Akhilesh S P Khope, A A M Saleh, John E Bowers, Andrew M Netherton, Takako Hirokawa, Nicolas Volet, Eric J Stanton, Clint L Schow, Roger Helkey, Rod C AlfernessAbstract:We present an 8×8 ring resonator based Crossbar Switch for WDM networks in data centers. The Switch can dynamically allocate bandwidth and is equipped with an on-chip wavelength reference for tuning the ring resonators to the specific channels.
Toshitsugu Sakamoto - One of the best experts on this subject based on the ideXlab platform.
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low power Crossbar Switch with two varistor selected complementary atom Switch 2v 1cas via Switch for nonvolatile fpga
IEEE Transactions on Electron Devices, 2019Co-Authors: Naoki Banno, Noriyuki Iguchi, Toshitsugu Sakamoto, Hidetoshi Onodera, Hiroyuki Ochi, K. Okamoto, Masanori Hashimoto, Tadahiko Sugibayashi, Munehiro TadaAbstract:A nonvolatile and programmable routing Switch featuring two-varistor selected complementary atom Switch (2V-1CAS also known as via-Switch) is evaluated. The a-Si/SiN/a-Si varistor as a selector for the atom Switch shows superior nonlinear current–voltage characteristics with high selectivity of ~105, which originates from the staircase barrier height in the layers. The two control lines connected to the varistors realize multiple fan-outs of the Crossbar Switch without select transistors. The $50\,\,\sf \times20$ Crossbar Switch block is demonstrated, where the atom Switch is placed at each cross point and programmed through the varistors. The developed via-Switch Crossbar Switch is a strong candidate for achieving energy-efficient nonvolatile field-programmable gate array in the Internet-of-Things applications.
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characterization of chalcogenide selectors for Crossbar Switch used in nonvolatile fpga
IEEE Silicon Nanoelectronics Workshop, 2019Co-Authors: Hideaki Numata, Naoki Banno, Noriyuki Iguchi, Toshitsugu Sakamoto, Hiromitsu Hada, K. Okamoto, Masanori Hashimoto, Tadahiko Sugibayashi, Munehiro TadaAbstract:Sputter deposited Ge x Se 1−x films are characterized, prior to device fabrication for a selector. A Se-rich film has GeSe 4/2 tetrahedral structure and higher crystallization temperature than Ge-rich films. Printed Ag-paste electrodes are used for I-V measurement and an amorphous Se-rich Ge x Se 1−x film shows the good Switching property for the selector with an on/off ratio of 4.8 × 104.
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50 20 Crossbar Switch block csb with two varistors a si sin a si selected complementary atom Switch for a highly dense reconfigurable logic
International Electron Devices Meeting, 2016Co-Authors: Naoki Banno, Noriyuki Iguchi, Toshitsugu Sakamoto, Hiromitsu Hada, Hidetoshi Onodera, Hiroyuki Ochi, K. Okamoto, Masanori Hashimoto, M Tilda, Tadahiko SugibayashiAbstract:A large scale, 50×20 Crossbar Switch block (CSB) is newly developed for a nonvolatile, highly-dense reconfigurable logic. A compact two-varistors selected complementary atom Switch (a.k.a. via-Switch) is placed at each cross-point, in which the two control lines connected to the varistors can realize the multiple fan-outs without select transistors. The improved a-Si/SiN/a-Si varistor with a novel triple layered SiN shows superior nonlinearity (NL) of 1.1×105 with J max =1.63MA/cm2 while keeping very low static power of 0.2μW for the CSB. The developed CSB is also applicable for nonvolatile configuration memory for look up tables (LUTs) as well as routing Switches used in low power reconfigurable logic.
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a novel two varistors a si sin a si selected complementary atom Switch 2v 1cas for nonvolatile Crossbar Switch with multiple fan outs
International Electron Devices Meeting, 2015Co-Authors: Naoki Banno, Munehiro Tada, Noriyuki Iguchi, Toshitsugu Sakamoto, Makoto Miyamura, Yukihide Tsuji, Hiromitsu Hada, Hiroyuki Ochi, K. Okamoto, Hidetoshi OnoderaAbstract:A nonvolatile and compact Switch realizing multiple fan-outs of a Crossbar Switch for programmable logic devices (PLDs) has been newly developed by using two-varistors selected complementary atom Switch (2V-1CAS). The two control lines connected to the varistors realize the accurate programming of each cross-point without select transistors. The novel nitrogen-modulated, TiN/a-Si/SiN/a-Si/TiN varistor shows superior nonlinear (NL) characteristic of ∼105, which are successfully stacked on the top of CAS with dual-hard mask (DHM) process. The developed 2V-1CAS (18F2) gives a promising Switch block (SB) used for energy-efficient, nonvolatile PLDs.
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polymer solid electrolyte Switch embedded on cmos for nonvolatile Crossbar Switch
IEEE Transactions on Electron Devices, 2011Co-Authors: Munehiro Tada, Naoki Banno, Toshitsugu Sakamoto, Makoto Miyamura, K. Okamoto, Hiromitsu HadaAbstract:A polymer solid-electrolyte (PSE) Switch has been embedded in a 90-nm-node CMOS featuring a forming-less programming and extremely high on/off ratio of 105. A fast programming of 10 ns is also demonstrated for 50-nmΦ 1 k-b array by introducing the PSE Switches integrated with a fully logic compatible process below 350°C. A high free volume in the PSE is supposed to result in the smooth formation of the Cu bridge without destroying the electrolyte, thereby also resulting in forming-less programming and high breakdown voltage. High disturbance reliability (T50; 50% fail) is extracted to be over 10 years at operation condition. The improved Switching characteristics enable us to accurately program the Crossbar circuit in a practical scale (32 × 32) without cell transistors. The developed Switch is a strong candidate for realizing a low-power and low-cost nonvolatile programmable logic.
John E Bowers - One of the best experts on this subject based on the ideXlab platform.
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a scalable multicast hybrid broadband Crossbar wavelength selective Switch for datacenters
IEEE Annual Computing and Communication Workshop and Conference, 2021Co-Authors: Akhilesh S P Khope, A A M Saleh, Rod C Alferness, Roger Helkey, Songtao Liu, John E BowersAbstract:We present a new Switching architecture that is wavelength selective and can multicast. We compare the Switch loss, number of elements and crosstalk with multi-wavelength selective Crossbar Switch. We report reduction in number of elements of 50%, reduced loss and a similar crosstalk as compared with multi-wavelength selective Crossbar Switch.
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scalable multicast hybrid broadband Crossbar wavelength selective Switch proposal and analysis
Optics Letters, 2021Co-Authors: Akhilesh S P Khope, A A M Saleh, Rod C Alferness, Roger Helkey, Songtao Liu, Sairaj Khope, John E BowersAbstract:In this Letter, we present a new hybrid broadband-Crossbar Switching network that can Switch multiple wavelengths on demand and can also multicast. This Switch fabric is an improvement over our previous design in both Switch footprint and power consumption, as it reduces the number of Switching elements by approximately 50%. We compare the Switch loss and crosstalk with that of a multiwavelength selective Crossbar Switch. We also comment on fabrication tolerance of second-order ring resonators based on experimental results of 64 second-order ring resonators, and more than 250 heaters.
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a spectrally partitioned Crossbar Switch with three drops per cross point controlled with a driver
IEEE Photonics Conference, 2019Co-Authors: Takako Hirokawa, A A M Saleh, John E Bowers, Roger Helkey, Mitra Saeidi, Aaron Maharry, Luke Theogarajan, Clint L SchowAbstract:We present the theory and realization of a spectrally-partitioned 4×4 Crossbar Switch, with three microring resonators per cross-point having disjoint resonance regions within a free spectral range. This demonstration of the Switch includes a driver. We describe an associated energy efficient, non-blocking wavelength assignment algorithm.
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demonstration of a spectrally partitioned 4 mathrm x 4 Crossbar Switch with 3 drops per cross point
International Conference on Photonics in Switching, 2019Co-Authors: Takako Hirokawa, A A M Saleh, John E Bowers, Roger Helkey, Aaron Maharry, Clint L SchowAbstract:We present the theory and realization of a spectrally-partitioned $4\mathrm{x}4$ Crossbar Switch, with three microrings per cross-point having disjoint resonance regions within an FSR. We also describe an associated energy efficient, non-blocking wavelength assignment algorithm.
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elastic wdm optoelectronic Crossbar Switch with on chip wavelength control
Advanced Photonics 2017 (IPR NOMA Sensors Networks SPPCom PS) (2017) paper PTh1D.3, 2017Co-Authors: Akhilesh S P Khope, A A M Saleh, John E Bowers, Andrew M Netherton, Takako Hirokawa, Nicolas Volet, Eric J Stanton, Clint L Schow, Roger Helkey, Rod C AlfernessAbstract:We present an 8×8 ring resonator based Crossbar Switch for WDM networks in data centers. The Switch can dynamically allocate bandwidth and is equipped with an on-chip wavelength reference for tuning the ring resonators to the specific channels.