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Nobuo Ueno - One of the best experts on this subject based on the ideXlab platform.
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gap states in pentacene thin film induced by inert gas exposure
Physical Review Letters, 2013Co-Authors: Fabio Bussolotti, Satoshi Kera, Kazuhiro Kudo, Antoine Kahn, Nobuo UenoAbstract:We studied gas-exposure effects on pentacene (Pn) films on SiO2 and Au(111) substrates by ultrahigh sensitivity photoelectron spectroscopy, which can detect the density of states of ∼10(16) states eV-1 cm-3 comparable to electrical measurements. The results show the striking effects for Pn/SiO2: exposure to inert gas (N2 and Ar) produces a sharp rise in gap states from ∼10(16) to ∼10(18) states eV-1 cm-3 and pushes the Fermi level closer to the valence band (0.15-0.17 eV), as does exposure to O2 (0.20 eV), while no such gas-exposure effect is observed for Pn/Au(111). The results demonstrate that these gap states originate from small imperfections in the Pn packing structure, which are induced by gas penetration into the film through the Crystal Grain boundaries.
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gap states in pentacene thin film induced by inert gas exposure
Physical Review Letters, 2013Co-Authors: Fabio Bussolotti, Satoshi Kera, Kazuhiro Kudo, Antoine Kahn, Nobuo UenoAbstract:We studied gas-exposure effects on pentacene (Pn) films on ${\mathrm{SiO}}_{2}$ and Au(111) substrates by ultrahigh sensitivity photoelectron spectroscopy, which can detect the density of states of $\ensuremath{\sim}{10}^{16}$ states ${\mathrm{eV}}^{\ensuremath{-}1}\text{ }{\mathrm{cm}}^{\ensuremath{-}3}$ comparable to electrical measurements. The results show the striking effects for $\mathrm{Pn}/{\mathrm{SiO}}_{2}$: exposure to inert gas (${\mathrm{N}}_{2}$ and Ar) produces a sharp rise in gap states from $\ensuremath{\sim}{10}^{16}$ to $\ensuremath{\sim}{10}^{18}$ states ${\mathrm{eV}}^{\ensuremath{-}1}\text{ }{\mathrm{cm}}^{\ensuremath{-}3}$ and pushes the Fermi level closer to the valence band (0.15--0.17 eV), as does exposure to ${\mathrm{O}}_{2}$ (0.20 eV), while no such gas-exposure effect is observed for $\mathrm{Pn}/\mathrm{Au}(111)$. The results demonstrate that these gap states originate from small imperfections in the Pn packing structure, which are induced by gas penetration into the film through the Crystal Grain boundaries.
Fabio Bussolotti - One of the best experts on this subject based on the ideXlab platform.
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gap states in pentacene thin film induced by inert gas exposure
Physical Review Letters, 2013Co-Authors: Fabio Bussolotti, Satoshi Kera, Kazuhiro Kudo, Antoine Kahn, Nobuo UenoAbstract:We studied gas-exposure effects on pentacene (Pn) films on SiO2 and Au(111) substrates by ultrahigh sensitivity photoelectron spectroscopy, which can detect the density of states of ∼10(16) states eV-1 cm-3 comparable to electrical measurements. The results show the striking effects for Pn/SiO2: exposure to inert gas (N2 and Ar) produces a sharp rise in gap states from ∼10(16) to ∼10(18) states eV-1 cm-3 and pushes the Fermi level closer to the valence band (0.15-0.17 eV), as does exposure to O2 (0.20 eV), while no such gas-exposure effect is observed for Pn/Au(111). The results demonstrate that these gap states originate from small imperfections in the Pn packing structure, which are induced by gas penetration into the film through the Crystal Grain boundaries.
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gap states in pentacene thin film induced by inert gas exposure
Physical Review Letters, 2013Co-Authors: Fabio Bussolotti, Satoshi Kera, Kazuhiro Kudo, Antoine Kahn, Nobuo UenoAbstract:We studied gas-exposure effects on pentacene (Pn) films on ${\mathrm{SiO}}_{2}$ and Au(111) substrates by ultrahigh sensitivity photoelectron spectroscopy, which can detect the density of states of $\ensuremath{\sim}{10}^{16}$ states ${\mathrm{eV}}^{\ensuremath{-}1}\text{ }{\mathrm{cm}}^{\ensuremath{-}3}$ comparable to electrical measurements. The results show the striking effects for $\mathrm{Pn}/{\mathrm{SiO}}_{2}$: exposure to inert gas (${\mathrm{N}}_{2}$ and Ar) produces a sharp rise in gap states from $\ensuremath{\sim}{10}^{16}$ to $\ensuremath{\sim}{10}^{18}$ states ${\mathrm{eV}}^{\ensuremath{-}1}\text{ }{\mathrm{cm}}^{\ensuremath{-}3}$ and pushes the Fermi level closer to the valence band (0.15--0.17 eV), as does exposure to ${\mathrm{O}}_{2}$ (0.20 eV), while no such gas-exposure effect is observed for $\mathrm{Pn}/\mathrm{Au}(111)$. The results demonstrate that these gap states originate from small imperfections in the Pn packing structure, which are induced by gas penetration into the film through the Crystal Grain boundaries.
Bertram Batlogg - One of the best experts on this subject based on the ideXlab platform.
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field induced charge transport at the surface of pentacene single Crystals a method to study charge dynamics of two dimensional electron systems in organic Crystals
Journal of Applied Physics, 2003Co-Authors: Jun Takeya, C Goldmann, Simon Haas, K P Pernstich, B Ketterer, Bertram BatloggAbstract:A method has been developed to inject mobile charges at the surface of organic molecular Crystals, and the dc transport of field-induced holes has been measured at the surface of pentacene single Crystals. To minimize damage to the soft and fragile surface, the Crystals are attached to a prefabricated substrate which incorporates a gate dielectric (SiO2) and four probe pads. The surface mobility of the pentacene Crystals ranges from 0.1 to 0.5 cm2/V s and is nearly temperature independent above ∼150 K, while it becomes thermally activated at lower temperatures when the induced charges become localized. Ruling out the influence of electric contacts and Crystal Grain boundaries, the results contribute to the microscopic understanding of trapping and detrapping mechanisms in organic molecular Crystals.
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field induced charge transport at the surface of pentacene single Crystals a method to study charge dynamics of 2d electron systems in organic Crystals
arXiv: Condensed Matter, 2003Co-Authors: Jun Takeya, C Goldmann, Simon Haas, K P Pernstich, B Ketterer, Bertram BatloggAbstract:A method has been developed to inject mobile charges at the surface of organic molecular Crystals, and the DC transport of field-induced holes has been measured at the surface of pentacene single Crystals. To minimize damage to the soft and fragile surface, the Crystals are attached to a pre-fabricated substrate which incorporates a gate dielectric (SiO_2) and four probe pads. The surface mobility of the pentacene Crystals ranges from 0.1 to 0.5 cm^2/Vs and is nearly temperature-independent above ~150 K, while it becomes thermally activated at lower temperatures when the induced charges become localized. Ruling out the influence of electric contacts and Crystal Grain boundaries, the results contribute to the microscopic understanding of trapping and detrapping mechanisms in organic molecular Crystals.
R M Tromp - One of the best experts on this subject based on the ideXlab platform.
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growth dynamics of pentacene thin films
Nature, 2001Co-Authors: Meyer Zu Heringdorf Fj, M C Reuter, R M TrompAbstract:The recent demonstration of single-Crystal organic optoelectronic devices has received widespread attention1,2,3,4. But practical applications of such devices require the use of inexpensive organic films deposited on a wide variety of substrates. Unfortunately, the physical properties of these organic thin films do not compare favourably to those of single-Crystal materials. Moreover, the basic physical principles governing organic thin-film growth and Crystallization are not well understood. Here we report an in situ study of the evolution of pentacene thin films, utilizing the real-time imaging capabilities of photoelectron emission microscopy. By a combination of careful substrate preparation and surface energy control, we succeed in growing thin films with single-Crystal Grain sizes approaching 0.1 millimetre (a factor of 20–100 larger than previously achieved), which are large enough to fully contain a complete device. We find that organic thin-film growth closely mimics epitaxial growth of inorganic materials, and we expect that strategies and concepts developed for these inorganic systems will provide guidance for the further development and optimization of molecular thin-film devices.
Satoshi Kera - One of the best experts on this subject based on the ideXlab platform.
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gap states in pentacene thin film induced by inert gas exposure
Physical Review Letters, 2013Co-Authors: Fabio Bussolotti, Satoshi Kera, Kazuhiro Kudo, Antoine Kahn, Nobuo UenoAbstract:We studied gas-exposure effects on pentacene (Pn) films on SiO2 and Au(111) substrates by ultrahigh sensitivity photoelectron spectroscopy, which can detect the density of states of ∼10(16) states eV-1 cm-3 comparable to electrical measurements. The results show the striking effects for Pn/SiO2: exposure to inert gas (N2 and Ar) produces a sharp rise in gap states from ∼10(16) to ∼10(18) states eV-1 cm-3 and pushes the Fermi level closer to the valence band (0.15-0.17 eV), as does exposure to O2 (0.20 eV), while no such gas-exposure effect is observed for Pn/Au(111). The results demonstrate that these gap states originate from small imperfections in the Pn packing structure, which are induced by gas penetration into the film through the Crystal Grain boundaries.
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gap states in pentacene thin film induced by inert gas exposure
Physical Review Letters, 2013Co-Authors: Fabio Bussolotti, Satoshi Kera, Kazuhiro Kudo, Antoine Kahn, Nobuo UenoAbstract:We studied gas-exposure effects on pentacene (Pn) films on ${\mathrm{SiO}}_{2}$ and Au(111) substrates by ultrahigh sensitivity photoelectron spectroscopy, which can detect the density of states of $\ensuremath{\sim}{10}^{16}$ states ${\mathrm{eV}}^{\ensuremath{-}1}\text{ }{\mathrm{cm}}^{\ensuremath{-}3}$ comparable to electrical measurements. The results show the striking effects for $\mathrm{Pn}/{\mathrm{SiO}}_{2}$: exposure to inert gas (${\mathrm{N}}_{2}$ and Ar) produces a sharp rise in gap states from $\ensuremath{\sim}{10}^{16}$ to $\ensuremath{\sim}{10}^{18}$ states ${\mathrm{eV}}^{\ensuremath{-}1}\text{ }{\mathrm{cm}}^{\ensuremath{-}3}$ and pushes the Fermi level closer to the valence band (0.15--0.17 eV), as does exposure to ${\mathrm{O}}_{2}$ (0.20 eV), while no such gas-exposure effect is observed for $\mathrm{Pn}/\mathrm{Au}(111)$. The results demonstrate that these gap states originate from small imperfections in the Pn packing structure, which are induced by gas penetration into the film through the Crystal Grain boundaries.