The Experts below are selected from a list of 19998 Experts worldwide ranked by ideXlab platform
Toshiaki Matsui - One of the best experts on this subject based on the ideXlab platform.
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30 nm gate algan gan heterostructure field effect transistors with a current gain Cutoff Frequency of 181 ghz
Japanese Journal of Applied Physics, 2006Co-Authors: Masataka Higashiwaki, Takashi Mimura, Toshiaki MatsuiAbstract:We fabricated Al0.4Ga0.6N(8 nm)/GaN heterostructure field-effect transistors (HFETs) with a gate length (LG) of 30 nm on a sapphire substrate. The AlGaN/GaN HFETs, which had a 2-nm-thick SiN passivation and gate-insulating layer formed by catalytic chemical vapor deposition, showed a maximum drain current density of 1.49 A/mm, a peak extrinsic transconductance of 402 mS/mm, a current-gain Cutoff Frequency ( fT) of 181 GHz, and a maximum oscillation Frequency of 186 GHz. From a delay time analysis of fT for the HFETs with LG=30–150 nm, the electron velocity overshoot was not observed even when LG was decreased to 30 nm.
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importance of gate recess structure to the Cutoff Frequency of ultra high speed ingaas inalas hemts
International Conference on Indium Phosphide and Related Materials, 2002Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi MimuraAbstract:We have succeeded in developing 30-nm-gate lattice-matched InGaAs/InAlAs HEMTs with an extremely high Cutoff Frequency f/sub t/ of 472 GHz, the highest value yet reported for any transistor. The superior high-speed characteristics of our HEMT were mainly due to a much reduced lateral gate-recess length while maintaining a small gate-to-channel distance, which enhanced the average electron velocity under the gate. We fabricated asymmetrically recessed-gate HEMTs to separately investigate the effect of source- and drain-side recess lengths on f/sub t/, and clarified that the drain-side recess is more critical to a superior f/sub t/. Monte Carlo simulation results were consistent with the experimental observations.
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extremely high speed lattice matched ingaas inalas high electron mobility transistors with 472 ghz Cutoff Frequency
Japanese Journal of Applied Physics, 2002Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Takashi Mimura, Satoshi HiyamizuAbstract:We report extremely high-speed 30-nm-gate InGaAs/InAlAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates with a record Cutoff Frequency ft of 472 GHz, the highest value yet reported for any transistor. The ft value exceeds 450 GHz and 400 GHz even for 50-nm-gate and 70-nm-gate devices, respectively. This outstanding performance is attributed to the significantly increased gm achieved by reducing the lateral gate-recess length while maintaining a small gate-to-channel separation, which enhances the average electron velocity under the gate.
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extremely high speed lattice matched ingaas inalas high electron mobility transistors with 472 ghz Cutoff Frequency
Japanese Journal of Applied Physics, 2002Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Takashi Mimura, Satoshi HiyamizuAbstract:We report extremely high-speed 30-nm-gate InGaAs/InAlAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates with a record Cutoff Frequency ft of 472 GHz, the highest value yet reported for any transistor. The ft value exceeds 450 GHz and 400 GHz even for 50-nm-gate and 70-nm-gate devices, respectively. This outstanding performance is attributed to the significantly increased gm achieved by reducing the lateral gate-recess length while maintaining a small gate-to-channel separation, which enhances the average electron velocity under the gate.
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ultrahigh speed pseudomorphic ingaas inalas hemts with 400 ghz Cutoff Frequency
IEEE Electron Device Letters, 2001Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Takashi Mimura, Satoshi HiyamizuAbstract:An excellent Cutoff Frequency (f/sub t/) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (L/sub g/) dependence of electron transit time (/spl tau//sub transit/) implied an increased saturation velocity (/spl upsi//sub s/) of 3.6/spl times/10/sup 7/ cm/s in the developed pseudomorphic HEMTs. This f/sub t/ is the highest value ever reported for any transistors to date.
J A Higgins - One of the best experts on this subject based on the ideXlab platform.
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microwave operation of gan algan doped channel heterostructure field effect transistors
IEEE Electron Device Letters, 1996Co-Authors: M A Khan, Q Chen, M S Shur, B T Dermott, J W Yang, J A HigginsAbstract:We report on the microwave operation of 1 /spl mu/m gate AlGaN/GaN doped channel heterostructure field effect transistors (DC-HFET's) with the Cutoff Frequency f/sub T/ of 18.3 GHz. These devices exhibit the Cutoff Frequency-gate length product in excess of 18 GHz/spl middot//spl mu/m, comparable to that of the state-of-the-art GaAs MESFET's. We explain these improvements in the device performance by the increased sheet carrier density in the device channel and by a reduction in the parasitic series resistances, caused by doping the device channel.
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short channel gan algan doped channel heterostructure field effect transistors with 36 1 Cutoff Frequency
Electronics Letters, 1996Co-Authors: M A Khan, Q Chen, M S Shur, B T Dermott, J A Higgins, Jinwook Burm, W J Schaff, L F EastmanAbstract:The authors report on the improved microwave performance of short AlGaN/GaN doped channel heterostructure field effect transistors. These transistors with 0.25 µm gates have a Cutoff Frequency fT up to 36.1 GHz (the highest reported value for a wide-bandgap semiconductor) and a maximum oscillation Frequency fmax ≃ 70.8 GHz. This value of fT is the highest value reported for any wide-bandgap semiconductor device.
Takashi Mimura - One of the best experts on this subject based on the ideXlab platform.
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30 nm gate algan gan heterostructure field effect transistors with a current gain Cutoff Frequency of 181 ghz
Japanese Journal of Applied Physics, 2006Co-Authors: Masataka Higashiwaki, Takashi Mimura, Toshiaki MatsuiAbstract:We fabricated Al0.4Ga0.6N(8 nm)/GaN heterostructure field-effect transistors (HFETs) with a gate length (LG) of 30 nm on a sapphire substrate. The AlGaN/GaN HFETs, which had a 2-nm-thick SiN passivation and gate-insulating layer formed by catalytic chemical vapor deposition, showed a maximum drain current density of 1.49 A/mm, a peak extrinsic transconductance of 402 mS/mm, a current-gain Cutoff Frequency ( fT) of 181 GHz, and a maximum oscillation Frequency of 186 GHz. From a delay time analysis of fT for the HFETs with LG=30–150 nm, the electron velocity overshoot was not observed even when LG was decreased to 30 nm.
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importance of gate recess structure to the Cutoff Frequency of ultra high speed ingaas inalas hemts
International Conference on Indium Phosphide and Related Materials, 2002Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi MimuraAbstract:We have succeeded in developing 30-nm-gate lattice-matched InGaAs/InAlAs HEMTs with an extremely high Cutoff Frequency f/sub t/ of 472 GHz, the highest value yet reported for any transistor. The superior high-speed characteristics of our HEMT were mainly due to a much reduced lateral gate-recess length while maintaining a small gate-to-channel distance, which enhanced the average electron velocity under the gate. We fabricated asymmetrically recessed-gate HEMTs to separately investigate the effect of source- and drain-side recess lengths on f/sub t/, and clarified that the drain-side recess is more critical to a superior f/sub t/. Monte Carlo simulation results were consistent with the experimental observations.
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extremely high speed lattice matched ingaas inalas high electron mobility transistors with 472 ghz Cutoff Frequency
Japanese Journal of Applied Physics, 2002Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Takashi Mimura, Satoshi HiyamizuAbstract:We report extremely high-speed 30-nm-gate InGaAs/InAlAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates with a record Cutoff Frequency ft of 472 GHz, the highest value yet reported for any transistor. The ft value exceeds 450 GHz and 400 GHz even for 50-nm-gate and 70-nm-gate devices, respectively. This outstanding performance is attributed to the significantly increased gm achieved by reducing the lateral gate-recess length while maintaining a small gate-to-channel separation, which enhances the average electron velocity under the gate.
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extremely high speed lattice matched ingaas inalas high electron mobility transistors with 472 ghz Cutoff Frequency
Japanese Journal of Applied Physics, 2002Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Takashi Mimura, Satoshi HiyamizuAbstract:We report extremely high-speed 30-nm-gate InGaAs/InAlAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates with a record Cutoff Frequency ft of 472 GHz, the highest value yet reported for any transistor. The ft value exceeds 450 GHz and 400 GHz even for 50-nm-gate and 70-nm-gate devices, respectively. This outstanding performance is attributed to the significantly increased gm achieved by reducing the lateral gate-recess length while maintaining a small gate-to-channel separation, which enhances the average electron velocity under the gate.
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ultrahigh speed pseudomorphic ingaas inalas hemts with 400 ghz Cutoff Frequency
IEEE Electron Device Letters, 2001Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Takashi Mimura, Satoshi HiyamizuAbstract:An excellent Cutoff Frequency (f/sub t/) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (L/sub g/) dependence of electron transit time (/spl tau//sub transit/) implied an increased saturation velocity (/spl upsi//sub s/) of 3.6/spl times/10/sup 7/ cm/s in the developed pseudomorphic HEMTs. This f/sub t/ is the highest value ever reported for any transistors to date.
Satoshi Hiyamizu - One of the best experts on this subject based on the ideXlab platform.
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importance of gate recess structure to the Cutoff Frequency of ultra high speed ingaas inalas hemts
International Conference on Indium Phosphide and Related Materials, 2002Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi MimuraAbstract:We have succeeded in developing 30-nm-gate lattice-matched InGaAs/InAlAs HEMTs with an extremely high Cutoff Frequency f/sub t/ of 472 GHz, the highest value yet reported for any transistor. The superior high-speed characteristics of our HEMT were mainly due to a much reduced lateral gate-recess length while maintaining a small gate-to-channel distance, which enhanced the average electron velocity under the gate. We fabricated asymmetrically recessed-gate HEMTs to separately investigate the effect of source- and drain-side recess lengths on f/sub t/, and clarified that the drain-side recess is more critical to a superior f/sub t/. Monte Carlo simulation results were consistent with the experimental observations.
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extremely high speed lattice matched ingaas inalas high electron mobility transistors with 472 ghz Cutoff Frequency
Japanese Journal of Applied Physics, 2002Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Takashi Mimura, Satoshi HiyamizuAbstract:We report extremely high-speed 30-nm-gate InGaAs/InAlAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates with a record Cutoff Frequency ft of 472 GHz, the highest value yet reported for any transistor. The ft value exceeds 450 GHz and 400 GHz even for 50-nm-gate and 70-nm-gate devices, respectively. This outstanding performance is attributed to the significantly increased gm achieved by reducing the lateral gate-recess length while maintaining a small gate-to-channel separation, which enhances the average electron velocity under the gate.
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extremely high speed lattice matched ingaas inalas high electron mobility transistors with 472 ghz Cutoff Frequency
Japanese Journal of Applied Physics, 2002Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Takashi Mimura, Satoshi HiyamizuAbstract:We report extremely high-speed 30-nm-gate InGaAs/InAlAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates with a record Cutoff Frequency ft of 472 GHz, the highest value yet reported for any transistor. The ft value exceeds 450 GHz and 400 GHz even for 50-nm-gate and 70-nm-gate devices, respectively. This outstanding performance is attributed to the significantly increased gm achieved by reducing the lateral gate-recess length while maintaining a small gate-to-channel separation, which enhances the average electron velocity under the gate.
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ultrahigh speed pseudomorphic ingaas inalas hemts with 400 ghz Cutoff Frequency
IEEE Electron Device Letters, 2001Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Takashi Mimura, Satoshi HiyamizuAbstract:An excellent Cutoff Frequency (f/sub t/) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (L/sub g/) dependence of electron transit time (/spl tau//sub transit/) implied an increased saturation velocity (/spl upsi//sub s/) of 3.6/spl times/10/sup 7/ cm/s in the developed pseudomorphic HEMTs. This f/sub t/ is the highest value ever reported for any transistors to date.
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ultra short 25 nm gate lattice matched inalas ingaas hemts within the range of 400 ghz Cutoff Frequency
IEEE Electron Device Letters, 2001Co-Authors: Yoshimi Yamashita, K Shinohara, Akira Endoh, Kohki Hikosaka, Takashi Mimura, Satoshi Hiyamizu, Masataka Higashiwaki, Toshiaki MatsuiAbstract:We have succeeded in fabricating ultra-short 25-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates. The two-step-recessed gate technology and low temperature processing at below 300/spl deg/C allowed the fabrication of such ultra-short gates. DC measurements showed that the 25-nm-gate HEMT had good pinchoff behavior. We obtained a Cutoff Frequency f/sub T/ of 396 GHz, within the range of 400 GHz f/sub T/, for the 25-nm-gate HEMT. This f/sub T/ is the highest value get reported for any type of transistor, and the gate length of 25 nm is the shortest value ever reported for any compound semiconductor transistor that exhibits device operation.
K Shinohara - One of the best experts on this subject based on the ideXlab platform.
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importance of gate recess structure to the Cutoff Frequency of ultra high speed ingaas inalas hemts
International Conference on Indium Phosphide and Related Materials, 2002Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi MimuraAbstract:We have succeeded in developing 30-nm-gate lattice-matched InGaAs/InAlAs HEMTs with an extremely high Cutoff Frequency f/sub t/ of 472 GHz, the highest value yet reported for any transistor. The superior high-speed characteristics of our HEMT were mainly due to a much reduced lateral gate-recess length while maintaining a small gate-to-channel distance, which enhanced the average electron velocity under the gate. We fabricated asymmetrically recessed-gate HEMTs to separately investigate the effect of source- and drain-side recess lengths on f/sub t/, and clarified that the drain-side recess is more critical to a superior f/sub t/. Monte Carlo simulation results were consistent with the experimental observations.
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extremely high speed lattice matched ingaas inalas high electron mobility transistors with 472 ghz Cutoff Frequency
Japanese Journal of Applied Physics, 2002Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Takashi Mimura, Satoshi HiyamizuAbstract:We report extremely high-speed 30-nm-gate InGaAs/InAlAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates with a record Cutoff Frequency ft of 472 GHz, the highest value yet reported for any transistor. The ft value exceeds 450 GHz and 400 GHz even for 50-nm-gate and 70-nm-gate devices, respectively. This outstanding performance is attributed to the significantly increased gm achieved by reducing the lateral gate-recess length while maintaining a small gate-to-channel separation, which enhances the average electron velocity under the gate.
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extremely high speed lattice matched ingaas inalas high electron mobility transistors with 472 ghz Cutoff Frequency
Japanese Journal of Applied Physics, 2002Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Takashi Mimura, Satoshi HiyamizuAbstract:We report extremely high-speed 30-nm-gate InGaAs/InAlAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates with a record Cutoff Frequency ft of 472 GHz, the highest value yet reported for any transistor. The ft value exceeds 450 GHz and 400 GHz even for 50-nm-gate and 70-nm-gate devices, respectively. This outstanding performance is attributed to the significantly increased gm achieved by reducing the lateral gate-recess length while maintaining a small gate-to-channel separation, which enhances the average electron velocity under the gate.
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ultrahigh speed pseudomorphic ingaas inalas hemts with 400 ghz Cutoff Frequency
IEEE Electron Device Letters, 2001Co-Authors: K Shinohara, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Toshiaki Matsui, Takashi Mimura, Satoshi HiyamizuAbstract:An excellent Cutoff Frequency (f/sub t/) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (L/sub g/) dependence of electron transit time (/spl tau//sub transit/) implied an increased saturation velocity (/spl upsi//sub s/) of 3.6/spl times/10/sup 7/ cm/s in the developed pseudomorphic HEMTs. This f/sub t/ is the highest value ever reported for any transistors to date.
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ultra short 25 nm gate lattice matched inalas ingaas hemts within the range of 400 ghz Cutoff Frequency
IEEE Electron Device Letters, 2001Co-Authors: Yoshimi Yamashita, K Shinohara, Akira Endoh, Kohki Hikosaka, Takashi Mimura, Satoshi Hiyamizu, Masataka Higashiwaki, Toshiaki MatsuiAbstract:We have succeeded in fabricating ultra-short 25-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates. The two-step-recessed gate technology and low temperature processing at below 300/spl deg/C allowed the fabrication of such ultra-short gates. DC measurements showed that the 25-nm-gate HEMT had good pinchoff behavior. We obtained a Cutoff Frequency f/sub T/ of 396 GHz, within the range of 400 GHz f/sub T/, for the 25-nm-gate HEMT. This f/sub T/ is the highest value get reported for any type of transistor, and the gate length of 25 nm is the shortest value ever reported for any compound semiconductor transistor that exhibits device operation.
