The Experts below are selected from a list of 1908 Experts worldwide ranked by ideXlab platform
Guo Liang Yang - One of the best experts on this subject based on the ideXlab platform.
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A Novel Low-Temperature Polysilicon Thin-Film Transistors With a Self-Aligned Gate and Raised Source/Drain Formed by the Damascene Process
2016Co-Authors: Kow Ming Chang, Gin Min Lin, Guo Liang YangAbstract:Abstract—In this letter, a novel structure of the polycrystalline silicon thin-film transistors (TFTs) with a self-aligned gate and raised source/drain (RSD) formed by the Damascene Process has been developed and investigated. Comparing with the conven-tional coplanar TFT, the proposed RSD TFT has a remarkable lower OFF-state current (177 to 6.29 nA), and the ON/OFF current ratio is only slightly decreased from 1.71 × 107 to 1.39 × 107. Only four photomasking steps are required. This novel structure is an excellent candidate for further high-performance large-area device applications. Index Terms—Damascene Process, four masks, on/off current ratio, polycrystalline silicon thin-film transistor (poly-Si TFT), raised source/drain (RSD), self-aligned gate, thin channel. I
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A Novel Low-Temperature Polysilicon Thin-Film Transistors With a Self-Aligned Gate and Raised Source/Drain Formed by the Damascene Process
IEEE Electron Device Letters, 2007Co-Authors: Kow Ming Chang, Gin Min Lin, Guo Liang YangAbstract:In this letter, a novel structure of the polycrystalline silicon thin-film transistors (TFTs) with a self-aligned gate and raised source/drain (RSD) formed by the Damascene Process has been developed and investigated. Comparing with the conventional coplanar TFT, the proposed RSD TFT has a remarkable lower off-state current (177 to 6.29 nA), and the on/off current ratio is only slightly decreased from 1.71 times 107 to 1.39 times 107. Only four photomasking steps are required. This novel structure is an excellent candidate for further high-performance large-area device applications.
Tobias J. Kippenberg - One of the best experts on this subject based on the ideXlab platform.
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Photonic Damascene Process with reflow step for ultra-smooth Si 3 N 4 waveguides
Conference on Lasers and Electro-Optics, 2018Co-Authors: Martin H. P. Pfeiffer, Junqiu Liu, Tiago Morais, Bahareh Ghadiani, Tobias J. KippenbergAbstract:We present ultra-smooth silicon nitride waveguides fabricated by the photonic Damascene Process extended with a novel reflow step. This leads to record Q-factors for tightly confining waveguides with anomalous dispersion.
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Photonic Damascene Process for Low-Loss, High-Confinement Silicon Nitride Waveguides
IEEE Journal of Selected Topics in Quantum Electronics, 2018Co-Authors: Martin H. P. Pfeiffer, Junqiu Liu, Tiago Morais, Clemens Herkommer, Michael Zervas, Michael Geiselmann, Tobias J. KippenbergAbstract:We report on fabrication of high-confinement and low loss silicon nitride ( $\text{Si}_{3}\text{N}_{4}$ ) waveguides using the photonic Damascene Process. This Process scheme represents a novel fabrication approach enabling reliable, wafer-scale fabrication of high-confinement optical waveguides. A reflow step of the silica preform reduces sidewall scattering to values not attainable with conventional etching, and reduces losses and backscattering significantly, resulting in a waveguide attenuation of 5.5 dB/m. We discuss the critical aspects of the Process in detail and demonstrate the fabrication of high stress $\text{Si}_{3}\text{N}_{4}$ waveguides with unprecedentedly large dimensions ( $\text{1.75}\,\mu \text{m} \times \text{1.425}\,\mu \text{m}$ ) providing high-confinement at midinfrared wavelengths. A device characterization strategy allowing for systematic extraction of statistically relevant loss values is discussed and reveals the effects of the sidewall smoothing.
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photonic Damascene Process for integrated high q microresonator based nonlinear photonics
arXiv: Optics, 2016Co-Authors: Martin H. P. Pfeiffer, Michael Zervas, Michael Geiselmann, Arne Kordts, Victor Brasch, J D Jost, Tobias J. KippenbergAbstract:High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as an attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion has enabled broadband nonlinear optical frequency comb generation. Such frequency combs have been successfully applied in coherent communication and ultrashort pulse generation. However, the reliable fabrication of high confinement waveguides from stoichiometric, high stress SiN remains challenging. Here we present a novel photonic Damascene fabrication Process enabling the use of substrate topography for stress control and thin film crack prevention. With close to unity sample yield we fabricate microresonators with 1.35 mu m thick waveguides and optical Q-factors of 3.7 x 10(6) and demonstrate single temporal dissipative Kerr soliton based coherent optical frequency comb generation. Our newly developed Process is also interesting for other material platforms, photonic integration, and mid-infrared Kerr comb generation. (C) 2016 Optical Society of America
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photonic Damascene Process for integrated high q microresonator based nonlinear photonics
Optica, 2016Co-Authors: Martin H. P. Pfeiffer, Michael Zervas, Michael Geiselmann, Arne Kordts, Victor Brasch, J D Jost, Tobias J. KippenbergAbstract:High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as an attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion has enabled broadband nonlinear optical frequency comb generation. Such frequency combs have been successfully applied in coherent communication and ultrashort pulse generation. However, the reliable fabrication of high confinement waveguides from stoichiometric, high stress SiN remains challenging. Here we present a novel photonic Damascene fabrication Process enabling the use of substrate topography for stress control and thin film crack prevention. With close to unity sample yield we fabricate microresonators with 1.35 μm thick waveguides and optical Q-factors of 3.7×106 and demonstrate single temporal dissipative Kerr soliton based coherent optical frequency comb generation. Our newly developed Process is also interesting for other material platforms, photonic integration, and mid-infrared Kerr comb generation.
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photonic Damascene Process for integrated high q microresonator based nonlinear photonics
arXiv: Optics, 2015Co-Authors: Martin H. P. Pfeiffer, Michael Zervas, Michael Geiselmann, Arne Kordts, Victor Brasch, J D Jost, Tobias J. KippenbergAbstract:High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion (GVD) has enabled broadband nonlinear optical frequency comb generation. Such frequency combs have been successfully applied in coherent communication and ultrashort pulse generation. However, the reliable fabrication of high confinement waveguides from stoichiometric, high stress SiN remains challenging. Here we present a novel photonic Damascene fabrication Process enabling the use of substrate topography for stress control and thin film crack prevention. With close to unity sample yield we fabricate microresonators with $1.35\,\mu\mathrm{m}$ thick waveguides and optical Q factors of $3.7\times10^{6}$ and demonstrate single temporal dissipative Kerr soliton (DKS) based coherent optical frequency comb generation. Our newly developed Process is interesting also for other material platforms, photonic integration and mid infrared Kerr comb generation.
Kow Ming Chang - One of the best experts on this subject based on the ideXlab platform.
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A Novel Low-Temperature Polysilicon Thin-Film Transistors With a Self-Aligned Gate and Raised Source/Drain Formed by the Damascene Process
2016Co-Authors: Kow Ming Chang, Gin Min Lin, Guo Liang YangAbstract:Abstract—In this letter, a novel structure of the polycrystalline silicon thin-film transistors (TFTs) with a self-aligned gate and raised source/drain (RSD) formed by the Damascene Process has been developed and investigated. Comparing with the conven-tional coplanar TFT, the proposed RSD TFT has a remarkable lower OFF-state current (177 to 6.29 nA), and the ON/OFF current ratio is only slightly decreased from 1.71 × 107 to 1.39 × 107. Only four photomasking steps are required. This novel structure is an excellent candidate for further high-performance large-area device applications. Index Terms—Damascene Process, four masks, on/off current ratio, polycrystalline silicon thin-film transistor (poly-Si TFT), raised source/drain (RSD), self-aligned gate, thin channel. I
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A Novel Low-Temperature Polysilicon Thin-Film Transistors With a Self-Aligned Gate and Raised Source/Drain Formed by the Damascene Process
IEEE Electron Device Letters, 2007Co-Authors: Kow Ming Chang, Gin Min Lin, Guo Liang YangAbstract:In this letter, a novel structure of the polycrystalline silicon thin-film transistors (TFTs) with a self-aligned gate and raised source/drain (RSD) formed by the Damascene Process has been developed and investigated. Comparing with the conventional coplanar TFT, the proposed RSD TFT has a remarkable lower off-state current (177 to 6.29 nA), and the on/off current ratio is only slightly decreased from 1.71 times 107 to 1.39 times 107. Only four photomasking steps are required. This novel structure is an excellent candidate for further high-performance large-area device applications.
Martin H. P. Pfeiffer - One of the best experts on this subject based on the ideXlab platform.
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Photonic Damascene Process with reflow step for ultra-smooth Si 3 N 4 waveguides
Conference on Lasers and Electro-Optics, 2018Co-Authors: Martin H. P. Pfeiffer, Junqiu Liu, Tiago Morais, Bahareh Ghadiani, Tobias J. KippenbergAbstract:We present ultra-smooth silicon nitride waveguides fabricated by the photonic Damascene Process extended with a novel reflow step. This leads to record Q-factors for tightly confining waveguides with anomalous dispersion.
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Photonic Damascene Process for Low-Loss, High-Confinement Silicon Nitride Waveguides
IEEE Journal of Selected Topics in Quantum Electronics, 2018Co-Authors: Martin H. P. Pfeiffer, Junqiu Liu, Tiago Morais, Clemens Herkommer, Michael Zervas, Michael Geiselmann, Tobias J. KippenbergAbstract:We report on fabrication of high-confinement and low loss silicon nitride ( $\text{Si}_{3}\text{N}_{4}$ ) waveguides using the photonic Damascene Process. This Process scheme represents a novel fabrication approach enabling reliable, wafer-scale fabrication of high-confinement optical waveguides. A reflow step of the silica preform reduces sidewall scattering to values not attainable with conventional etching, and reduces losses and backscattering significantly, resulting in a waveguide attenuation of 5.5 dB/m. We discuss the critical aspects of the Process in detail and demonstrate the fabrication of high stress $\text{Si}_{3}\text{N}_{4}$ waveguides with unprecedentedly large dimensions ( $\text{1.75}\,\mu \text{m} \times \text{1.425}\,\mu \text{m}$ ) providing high-confinement at midinfrared wavelengths. A device characterization strategy allowing for systematic extraction of statistically relevant loss values is discussed and reveals the effects of the sidewall smoothing.
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photonic Damascene Process for integrated high q microresonator based nonlinear photonics
arXiv: Optics, 2016Co-Authors: Martin H. P. Pfeiffer, Michael Zervas, Michael Geiselmann, Arne Kordts, Victor Brasch, J D Jost, Tobias J. KippenbergAbstract:High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as an attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion has enabled broadband nonlinear optical frequency comb generation. Such frequency combs have been successfully applied in coherent communication and ultrashort pulse generation. However, the reliable fabrication of high confinement waveguides from stoichiometric, high stress SiN remains challenging. Here we present a novel photonic Damascene fabrication Process enabling the use of substrate topography for stress control and thin film crack prevention. With close to unity sample yield we fabricate microresonators with 1.35 mu m thick waveguides and optical Q-factors of 3.7 x 10(6) and demonstrate single temporal dissipative Kerr soliton based coherent optical frequency comb generation. Our newly developed Process is also interesting for other material platforms, photonic integration, and mid-infrared Kerr comb generation. (C) 2016 Optical Society of America
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photonic Damascene Process for integrated high q microresonator based nonlinear photonics
Optica, 2016Co-Authors: Martin H. P. Pfeiffer, Michael Zervas, Michael Geiselmann, Arne Kordts, Victor Brasch, J D Jost, Tobias J. KippenbergAbstract:High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as an attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion has enabled broadband nonlinear optical frequency comb generation. Such frequency combs have been successfully applied in coherent communication and ultrashort pulse generation. However, the reliable fabrication of high confinement waveguides from stoichiometric, high stress SiN remains challenging. Here we present a novel photonic Damascene fabrication Process enabling the use of substrate topography for stress control and thin film crack prevention. With close to unity sample yield we fabricate microresonators with 1.35 μm thick waveguides and optical Q-factors of 3.7×106 and demonstrate single temporal dissipative Kerr soliton based coherent optical frequency comb generation. Our newly developed Process is also interesting for other material platforms, photonic integration, and mid-infrared Kerr comb generation.
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photonic Damascene Process for integrated high q microresonator based nonlinear photonics
arXiv: Optics, 2015Co-Authors: Martin H. P. Pfeiffer, Michael Zervas, Michael Geiselmann, Arne Kordts, Victor Brasch, J D Jost, Tobias J. KippenbergAbstract:High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion (GVD) has enabled broadband nonlinear optical frequency comb generation. Such frequency combs have been successfully applied in coherent communication and ultrashort pulse generation. However, the reliable fabrication of high confinement waveguides from stoichiometric, high stress SiN remains challenging. Here we present a novel photonic Damascene fabrication Process enabling the use of substrate topography for stress control and thin film crack prevention. With close to unity sample yield we fabricate microresonators with $1.35\,\mu\mathrm{m}$ thick waveguides and optical Q factors of $3.7\times10^{6}$ and demonstrate single temporal dissipative Kerr soliton (DKS) based coherent optical frequency comb generation. Our newly developed Process is interesting also for other material platforms, photonic integration and mid infrared Kerr comb generation.
Qi Xiang - One of the best experts on this subject based on the ideXlab platform.
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Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode
IEEE Electron Device Letters, 2003Co-Authors: James Pan, Christy Mei-chu Woo, Chih-yuh Yang, U. Bhandary, S. Guggilla, N. Krishna, Hua Chung, A. Hui, Qi XiangAbstract:This work reports the first replacement (Damascene) metal gate NMOSFETs with atomic layer deposition (ALD) TaN/PVD and electroplated Cu as the stacked gate electrode. Transistors with PVD TaN and PVD Ta electrode are also fabricated. Our data show that ALD TaN has the right work function for the N-MOSFETs. The Cu Damascene Process can reduce the gate resistivity. The ALD Process has the advantage of reducing the stress and radiation damage to the gate oxide. The Damascene Process flow bypasses high temperature steps (>600/spl deg/C)-critical for metal gate and high-k materials.
