The Experts below are selected from a list of 1794 Experts worldwide ranked by ideXlab platform
P. Roca I Cabarrocas - One of the best experts on this subject based on the ideXlab platform.
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The kinetics of light‐induced defect creation in hydrogenated polymorphous silicon – stretched exponential relaxation
Physica Status Solidi (c), 2010Co-Authors: Kazuo Morigaki, K. Takeda, H. Hikita, P. Roca I CabarrocasAbstract:The growing curve of light-induced Dangling Bonds under illumination has been observed for various intensities of illumination in hydrogenated polymorphous silicon. It is fitted to a stretched exponential function with two parameters β and τ. The experimental results on the values of β and τ as functions of saturated Dangling Bond Density Nss are compared with those calculated on the basis of our model for light-induced defect creation in a-Si:H. This comparison as well as the experimental result on saturated Dangling Bond Density as a function of generation rate of free carriers is consistent with our model (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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The kinetics of the light-induced defect creation in hydrogenated amorphous silicon – Stretched exponential relaxation
Journal of Non-crystalline Solids, 2008Co-Authors: Kazuo Morigaki, K. Takeda, H. Hikita, C. Ogihara, P. Roca I CabarrocasAbstract:Abstract Our model for light-induced defect creation in hydrogenated amorphous silicon is applied to its kinetics, i.e., the growing curve of light-induced Dangling Bond Density as a function of illumination time, which is fitted to a stretched exponential function. Two parameters β and τ involved in the function are estimated as functions of saturated Dangling Bond Density in terms of our model. These are compared with two experimental results, i.e., our results obtained from ESR measurements and Shimakawa et al.’s results obtained from photoconductivity measurements. The saturated Dangling Bond Density is also measured as a function of the generation rate of free carriers. The experimental results are compared with calculated results and discussed.
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Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon
Solid State Communications, 2007Co-Authors: Kazuo Morigaki, K. Takeda, H. Hikita, P. Roca I CabarrocasAbstract:Abstract The growing curve of light-induced Dangling Bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters β and τ involved in the function are estimated as a function of saturated Dangling Bond Density N ss . The experimental values of β , τ , and N ss are compared with those calculated based on our model of light-induced defect creation in a-Si:H.
Makoto Konagai - One of the best experts on this subject based on the ideXlab platform.
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Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix
Nanoscale Research Letters, 2014Co-Authors: Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto KonagaiAbstract:We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon Dangling Bonds at a treatment temperature of approximately 400°C. The total Dangling Bond Density decreases from 1.1 × 10^19 cm^-3 to 3.7 × 10^17 cm^-3, which is comparable to the defect Density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.
Tatsuo Shimizu - One of the best experts on this subject based on the ideXlab platform.
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Distribution of Dangling Bonds in light-soaked and in high-temperature-annealed a-Si:H
Journal of Non-crystalline Solids, 1996Co-Authors: Jiang-huai Zhou, Minoru Kumeda, Tatsuo ShimizuAbstract:Abstract The spatial distributions of Dangling Bonds in light-soaked and in high-temperature-annealed a-Si:H have been studied. The distribution of Dangling Bonds in light-soaked a-Si:H is non-uniform and the Density of Dangling Bonds has an inverse power-law depth dependence N v ( χ ) = C v χ − δ , with δ being about 0.6. The distribution of Dangling Bonds in high-temperature-annealed a-Si:H depends on the annealing time. For short annealing times, the distribution is highly non-uniform. At sufficiently long annealing times, saturation of the Dangling Bond Density occurs and the distribution of Dangling Bonds becomes uniform.
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Relationship between Electrical Conductivity and Charged- Dangling-Bond Density in Nitrogen- and Phosphorus-Doped Hydrogenated Amorphous Silicon
Japanese Journal of Applied Physics, 1994Co-Authors: Atsushi Masuda, Ken-ichi Itoh, Jiang-huai Zhou, Minoru Kumeda, Tatsuo ShimizuAbstract:Comparing the results for nitrogen doping in hydrogenated amorphous silicon ( a-Si:H) with those for phosphorus doping, the increase in the charged-Dangling-Bond Density estimated by equilibrium electron spin resonance (ESR) and light-induced ESR is found to have no apparent correlation with the increase in the electrical conductivity. The results for varying concentrations of nitrogen doping are also consistent with this finding. The increase of potential fluctuations due to structural disorder by nitrogen doping in an a-Si:H network appears to be the dominant origin of the increase of charged Dangling Bonds in the case of nitrogen doping.
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Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
Japanese Journal of Applied Physics, 1991Co-Authors: Hui Yan, Minoru Kumeda, Akiharu Morimoto, Tatsuo ShimizuAbstract:The ESR signal in a-Si1-xGex:H alloy films after fast cooling from an elevated temperature was compared with that after slow cooling. The reversible thermally induced increase in the neutral Dangling Bond Density of about 20% was observed at 250°C. The reversible thermally induced change in the dark conductivity (σd) was also observed by the same heat treatment as for the ESR measurement.
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Effect of Reduction in Impurity Content for a-Si:H Films
Japanese Journal of Applied Physics, 1990Co-Authors: Akiharu Morimoto, Minoru Kumeda, Minoru Matsumoto, Tatsuo ShimizuAbstract:a-Si:H films with various impurity contents were prepared by three kinds of glow discharge decomposition systems. The impurity content for films prepared by these systems was determined by SIMS, and the dark conductivity and the Density of charged Dangling Bonds were also measured. The following results were obtained: the dark conductivity σd, the activation energy Ea and the Density of charged Dangling Bonds are closely correlated with the N and/or O impurity content. These results suggest that the Fermi level and the charged Dangling Bond Density in a-Si:H are largely affected by the presence of the impurity-defect pair such as N4++Si3- and/or O3++Si3-.
Kazuo Morigaki - One of the best experts on this subject based on the ideXlab platform.
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The kinetics of light‐induced defect creation in hydrogenated polymorphous silicon – stretched exponential relaxation
Physica Status Solidi (c), 2010Co-Authors: Kazuo Morigaki, K. Takeda, H. Hikita, P. Roca I CabarrocasAbstract:The growing curve of light-induced Dangling Bonds under illumination has been observed for various intensities of illumination in hydrogenated polymorphous silicon. It is fitted to a stretched exponential function with two parameters β and τ. The experimental results on the values of β and τ as functions of saturated Dangling Bond Density Nss are compared with those calculated on the basis of our model for light-induced defect creation in a-Si:H. This comparison as well as the experimental result on saturated Dangling Bond Density as a function of generation rate of free carriers is consistent with our model (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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The kinetics of the light-induced defect creation in hydrogenated amorphous silicon – Stretched exponential relaxation
Journal of Non-crystalline Solids, 2008Co-Authors: Kazuo Morigaki, K. Takeda, H. Hikita, C. Ogihara, P. Roca I CabarrocasAbstract:Abstract Our model for light-induced defect creation in hydrogenated amorphous silicon is applied to its kinetics, i.e., the growing curve of light-induced Dangling Bond Density as a function of illumination time, which is fitted to a stretched exponential function. Two parameters β and τ involved in the function are estimated as functions of saturated Dangling Bond Density in terms of our model. These are compared with two experimental results, i.e., our results obtained from ESR measurements and Shimakawa et al.’s results obtained from photoconductivity measurements. The saturated Dangling Bond Density is also measured as a function of the generation rate of free carriers. The experimental results are compared with calculated results and discussed.
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Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon
Solid State Communications, 2007Co-Authors: Kazuo Morigaki, K. Takeda, H. Hikita, P. Roca I CabarrocasAbstract:Abstract The growing curve of light-induced Dangling Bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters β and τ involved in the function are estimated as a function of saturated Dangling Bond Density N ss . The experimental values of β , τ , and N ss are compared with those calculated based on our model of light-induced defect creation in a-Si:H.
Dong-hwan Kim - One of the best experts on this subject based on the ideXlab platform.
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Remote plasma enhanced chemical vapor deposition of silicon films at low temperatures from Si{sub 2}H{sub 6}-H{sub 2}SiF{sub 4}
Journal of The Electrochemical Society, 1996Co-Authors: Dong-hwan Kim, Il-jeong Lee, Young-bae Park, Shi-woo RheeAbstract:SiF{sub 4} was added into Si{sub 2}H{sub 6}-H{sub 2} to deposit silicon films with a crystalline phase at low temperatures (ca. 400 C) in a remote plasma enhanced chemical vapor deposition reactor. It was found that the amount of SiF{sub 4} and the plasma power as well as the deposition temperature had a significant effect on the chemical composition, surface roughness, crystallinity, and silicon Dangling Bond Density of the film. The fluorine chemistry not only reduced the amount of hydrogen and oxygen incorporated into the film but also suppressed particle formation in the gas phase, which enhanced crystallization at low temperatures.
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Effect of fluorine chemistry in the remote plasma enhanced chemical vapor deposition of silicon films from Si_2H_6-SiF_4-H_2
Korean Journal of Chemical Engineering, 1995Co-Authors: Dong-hwan Kim, Il-jeong Lee, Shi-woo Rhee, Sang Heup MoonAbstract:SiF_4 was added into Si_2H_6-H_2 to deposit polycrystalline silicon films at low temperatures around 400°C in a remote plasma enhanced chemical vapor deposition reactor. It was found out that the fluorine chemistry obtained from SiF_4 addition had an influence on the chemical composition, crystallinity, and silicon Dangling Bond Density of the film. The fluorine chemistry reduced the amount of hydrogen and oxygen incorporated into the film and also suppressed the formation of powders in the gas phase, which helped the crystallization at low temperatures. Effect of SiF_4 concentration as well as the deposition temperature was also significant.
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Effect of fluorine chemistry in the remote plasma enhanced chemical vapor deposition of silicon films from Si2H6-SiF4-H2
Korean Journal of Chemical Engineering, 1995Co-Authors: Dong-hwan Kim, Il-jeong Lee, Shi-woo Rhee, Sang Heup MoonAbstract:SiF4 was added into Si2H6-H2 to deposit polycrystalline silicon films at low temperatures around 400°C in a remote plasma enhanced chemical vapor deposition reactor. It was found out that the fluorine chemistry obtained from SiF4 addition had an influence on the chemical composition, crystallinity, and silicon Dangling Bond Density of the film. The fluorine chemistry reduced the amount of hydrogen and oxygen incorporated into the film and also suppressed the formation of powders in the gas phase, which helped the crystallization at low temperatures. Effect of SiF4 concentration as well as the deposition temperature was also significant.
