The Experts below are selected from a list of 65295 Experts worldwide ranked by ideXlab platform
Hock Jin Quah - One of the best experts on this subject based on the ideXlab platform.
-
Tailoring In2Ga2ZnO7 thin film properties by Annealing Time effect
Materials Chemistry and Physics, 2021Co-Authors: Nabihah Kasim, Zainuriah Hassan, Way Foong Lim, Hock Jin QuahAbstract:Abstract Properties of indium gallium zinc oxide (In2Ga2ZnO7) thin films on silicon (Si) substrate prepared using sol-gel method in response to Annealing Time were thoroughly studied. Post-Annealing treatment for 5, 15, 30 and 60 min has revealed changes on surface morphologies, film roughness, film thickness and optical energy bandgap. InGaZnO (IGZO) structure was determined to be polycrystalline after Annealing at 500 °C temperature regardless of Annealing Time. The increase in Annealing Time to 60 min successfully encouraged the formation of interfacial layer (IL) on the underlying Si substrate, owing to a build-up of oxygen molecules diffused from the ambient that resided in the lattice. As a result, a larger leakage current was obtained from leakage current density-voltage (J-V) characteristic. Corresponding properties of the films in comparison to 60 min Annealing were further elaborated in terms of optical and electrical characterization.
-
Effects of Annealing Time on the electrical properties of the Y2O3gate on silicon
Journal of Experimental Nanoscience, 2013Co-Authors: Hock Jin Quah, Kuan Yew CheongAbstract:Effects of post-deposition Annealing Time (15, 30, and 45 minutes) have been studied on a Y2O3 film sputtered on a Si substrate. A negative flatband voltage shift was observed in a forward bias direction, indicating the presence of positive charges in all samples. The highest dielectric breakdown field and lowest leakage current density were obtained by a sample annealed for 45 minutes, attributed to the acquisition of the lowest effective oxide charge, interface trap density, total interface trap density, and highest barrier height. It was believed that the formation of Y2Si2O7 and/or SiO2 interfacial layers has contributed to the above-mentioned observation.
Enrique Castaño - One of the best experts on this subject based on the ideXlab platform.
-
Enhanced features of Li2CO3 sputtered thin films induced by thickness and Annealing Time
CrystEngComm, 2015Co-Authors: Lander Rojo, I. Castro-hurtado, Maria C. Morant-miñana, G.g. Mandayo, Enrique CastañoAbstract:Li2CO3 sputtered films of 300 nm have been subjected to physical and electrochemical characterization methods to analyze the influence of Annealing treatments at 600 °C for 2 h, 6 h, 12 h and 18 h on the microstructure, surface and conductivity. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy (AFM) and electrochemical impedance spectroscopy (EIS) have been used for this purpose. XRD and FT-IR have illustrated the evolution of the microstructure with Annealing Time. AFM analysis has shown the growth of new Li2CO3 particles that increases with Annealing Time presenting a maximum diameter of 16.8 μm without compromising the continuity of the films. EIS measurements have described a fall in the activation energy of the Li2CO3 thin films presenting a minimum around 1.18 eV. The results concerning the activation energy of the films have shown an improvement compared to the results obtained previously for Li2CO3. These results serve to understand and optimize the behaviour of the Li2CO3 thin films in gas sensors, fuel cells or Li+ ion batteries.
Ranjit Singh - One of the best experts on this subject based on the ideXlab platform.
-
The effect of Annealing Time on thermally stimulated discharge current of corona-charged ethyl cellulose
Journal of Thermal Analysis and Calorimetry, 2011Co-Authors: Mulayam Singh Gaur, Reeta Singh, Pramod Kumar Singh, Ajay Pal Indolia, Ranjit SinghAbstract:Short circuit thermally stimulated discharge current (TSDC) has been recorded in corona-charged ethyl cellulose foil samples at different Annealing Time. An analysis of the data reveals significant changes in the TSDC curves of the samples as a function of Annealing Time. The possible relaxation processes accounting for the changes are discussed, not only a shift of peak temperature of the observed peak to higher temperatures, but also a lowering in its height has been observed with increase in Annealing Time. Peak temperature higher than 343 K did not arise even for the Annealing Time of 240 h. The activation energy ( A ) has been found to increase, while the trapped charge carrier n _ t decrease with increase in Annealing Time. Linear relationship between ln A and n _ t indicated an exponential distribution of traps.
Yaling Wang - One of the best experts on this subject based on the ideXlab platform.
-
Evolution of structure and electrical properties with Annealing Time in solution-based VO2 thin films
Journal of Alloys and Compounds, 2015Co-Authors: Guo Yuxian, Chongwen Zou, Zhiyun Yang, Bin Tong, Youjie Zhang, Li Zhao, Yaling WangAbstract:Abstract Vanadium dioxide (VO 2 ) thin films were prepared on c-sapphire substrates by using an easy sol–gel method and sequential vacuum Annealing process. The effects of Annealing Time on the structure, morphology and phase transition properties were investigated. The results show that, with the extended Annealing Time from 1 h to 7 h, the films have transformed from V 2 O 3 to V 3 O 5 , and then VO 2 . The VO 2 thin films prepared with the Annealing Time of 4 h or 7 h display good phase transition property with the resistance change up to 3 orders of magnitude. Furthermore, the 7 h-sintered film has better growth orient, bigger grain size and lower phase transition temperature comparing with the 4 h-sintered film. It is suggested that, the prolonged Annealing treatment will be in favor of the crystal film quality and enhance the related phase transition property for the solution-based VO 2 films. Based on the Raman results, we have discussed the possible reactions and evolution mechanisms during the VO 2 film preparation with different Annealing Time.
Hong-bae Kim - One of the best experts on this subject based on the ideXlab platform.
-
Effect of post-Annealing Time on the properties of sputtered Al-doped ZnO thin films
Journal of Materials Science: Materials in Electronics, 2016Co-Authors: Deok-kyu Kim, Hong-bae KimAbstract:Al doped ZnO (AZO) thin films prepared by RF magnetron sputtering were annealed in rapid thermal Annealing system under various post-Annealing Times. The effect of post-Annealing Time on the structural, optical, and electrical properties of AZO film was investigated, systematically. As the post-Annealing Time elongated, the electrical resistivity was improved due to an increase in the carrier concentration and the mobility. X-ray photoelectron spectroscopy showed that the long post-Annealing Time increased the oxygen vacancy and decreased the surface bonding caused by the O2 absorption on surface, resulting in increase of the carrier concentration and the mobility. Therefore, the post-Annealing Time plays an important role in determining the nature of bonding in AZO thin films and is a powerful method to obtain better electrical properties.
-
investigation of the Annealing Time effects on the properties of sputtered zno al thin films
Applied Science and Convergence Technology, 2014Co-Authors: Deok-kyu Kim, Hong-bae KimAbstract:ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal Annealing system. The influence of Annealing Time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the Annealing Time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing Annealing Time.
