The Experts below are selected from a list of 879477 Experts worldwide ranked by ideXlab platform
Chihyuan Lu - One of the best experts on this subject based on the ideXlab platform.
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investigation of electron and hole lateral migration in silicon nitride and Data Pattern effects on v _ t retention loss in a multilevel charge trap flash memory
IEEE Transactions on Electron Devices, 2019Co-Authors: Tingchien Zhan, Tahui Wang, Wenjer Tsai, Taocheng Lu, Kuangchao Chen, Chihyuan LuAbstract:We investigate electron and hole lateral migration in ${V}_{t}$ retention loss in a multilevel charge trap flash memory. We use hot electron program and band-to-band tunneling hot hole erase to inject various amounts of electrons and holes at the two ends of a SONOS cell. A random telegraph signal (RTS) method is used to distinguish electron and hole lateral movements in silicon nitride. In ${V}_{t}$ retention measurement, we apply a voltage to the gate or the source/drain to enhance or retard trapped charge vertical loss and lateral migration. From the evolution characteristics of RTS and ${V}_{t}$ traces in retention, we are able to identify the separate roles of electron vertical loss, electron lateral migration, and hole lateral migration in different Data Patterns. Due to the interaction of stored electrons and holes, we find that ${V}_{t}$ retention loss in a program state exhibits a turnaround characteristic as program ${V}_{t}$ level increases. ${V}_{t}$ loss at low program levels is attributed to hole lateral migration from a neighboring bit. At higher program levels, the influence of hole lateral migration is reduced and ${V}_{t}$ loss is dominated by electron vertical loss and lateral migration.
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investigation of Data Pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method
International Reliability Physics Symposium, 2018Co-Authors: Chengmin Jiang, Tahui Wang, Wenjer Tsai, Taocheng Lu, K C Chen, Chihyuan LuAbstract:Data Pattern effects on nitride charge lateral migration and V t retention loss in a charge trap flash memory is investigated. We use channel hot electron program and band-to-band tunneling hot hole erase to inject different amounts of electrons and holes at the two sides of a channel in a SONOS cell. An interface oxide trap near an injected charge packet and its associated random telegraph signal (RTS) are used as an internal probe to detect a local channel potential change resulting from trapped charge lateral migration. V t retention loss and RTS in various charge storage Patterns are characterized and analyzed. At a similar built-in electric field, nitride trapped holes are found to be more mobile than trapped electrons in lateral migration.
Wenjer Tsai - One of the best experts on this subject based on the ideXlab platform.
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investigation of electron and hole lateral migration in silicon nitride and Data Pattern effects on v _ t retention loss in a multilevel charge trap flash memory
IEEE Transactions on Electron Devices, 2019Co-Authors: Tingchien Zhan, Tahui Wang, Wenjer Tsai, Taocheng Lu, Kuangchao Chen, Chihyuan LuAbstract:We investigate electron and hole lateral migration in ${V}_{t}$ retention loss in a multilevel charge trap flash memory. We use hot electron program and band-to-band tunneling hot hole erase to inject various amounts of electrons and holes at the two ends of a SONOS cell. A random telegraph signal (RTS) method is used to distinguish electron and hole lateral movements in silicon nitride. In ${V}_{t}$ retention measurement, we apply a voltage to the gate or the source/drain to enhance or retard trapped charge vertical loss and lateral migration. From the evolution characteristics of RTS and ${V}_{t}$ traces in retention, we are able to identify the separate roles of electron vertical loss, electron lateral migration, and hole lateral migration in different Data Patterns. Due to the interaction of stored electrons and holes, we find that ${V}_{t}$ retention loss in a program state exhibits a turnaround characteristic as program ${V}_{t}$ level increases. ${V}_{t}$ loss at low program levels is attributed to hole lateral migration from a neighboring bit. At higher program levels, the influence of hole lateral migration is reduced and ${V}_{t}$ loss is dominated by electron vertical loss and lateral migration.
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investigation of Data Pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method
International Reliability Physics Symposium, 2018Co-Authors: Chengmin Jiang, Tahui Wang, Wenjer Tsai, Taocheng Lu, K C Chen, Chihyuan LuAbstract:Data Pattern effects on nitride charge lateral migration and V t retention loss in a charge trap flash memory is investigated. We use channel hot electron program and band-to-band tunneling hot hole erase to inject different amounts of electrons and holes at the two sides of a channel in a SONOS cell. An interface oxide trap near an injected charge packet and its associated random telegraph signal (RTS) are used as an internal probe to detect a local channel potential change resulting from trapped charge lateral migration. V t retention loss and RTS in various charge storage Patterns are characterized and analyzed. At a similar built-in electric field, nitride trapped holes are found to be more mobile than trapped electrons in lateral migration.
Taocheng Lu - One of the best experts on this subject based on the ideXlab platform.
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investigation of electron and hole lateral migration in silicon nitride and Data Pattern effects on v _ t retention loss in a multilevel charge trap flash memory
IEEE Transactions on Electron Devices, 2019Co-Authors: Tingchien Zhan, Tahui Wang, Wenjer Tsai, Taocheng Lu, Kuangchao Chen, Chihyuan LuAbstract:We investigate electron and hole lateral migration in ${V}_{t}$ retention loss in a multilevel charge trap flash memory. We use hot electron program and band-to-band tunneling hot hole erase to inject various amounts of electrons and holes at the two ends of a SONOS cell. A random telegraph signal (RTS) method is used to distinguish electron and hole lateral movements in silicon nitride. In ${V}_{t}$ retention measurement, we apply a voltage to the gate or the source/drain to enhance or retard trapped charge vertical loss and lateral migration. From the evolution characteristics of RTS and ${V}_{t}$ traces in retention, we are able to identify the separate roles of electron vertical loss, electron lateral migration, and hole lateral migration in different Data Patterns. Due to the interaction of stored electrons and holes, we find that ${V}_{t}$ retention loss in a program state exhibits a turnaround characteristic as program ${V}_{t}$ level increases. ${V}_{t}$ loss at low program levels is attributed to hole lateral migration from a neighboring bit. At higher program levels, the influence of hole lateral migration is reduced and ${V}_{t}$ loss is dominated by electron vertical loss and lateral migration.
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investigation of Data Pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method
International Reliability Physics Symposium, 2018Co-Authors: Chengmin Jiang, Tahui Wang, Wenjer Tsai, Taocheng Lu, K C Chen, Chihyuan LuAbstract:Data Pattern effects on nitride charge lateral migration and V t retention loss in a charge trap flash memory is investigated. We use channel hot electron program and band-to-band tunneling hot hole erase to inject different amounts of electrons and holes at the two sides of a channel in a SONOS cell. An interface oxide trap near an injected charge packet and its associated random telegraph signal (RTS) are used as an internal probe to detect a local channel potential change resulting from trapped charge lateral migration. V t retention loss and RTS in various charge storage Patterns are characterized and analyzed. At a similar built-in electric field, nitride trapped holes are found to be more mobile than trapped electrons in lateral migration.
Tahui Wang - One of the best experts on this subject based on the ideXlab platform.
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investigation of electron and hole lateral migration in silicon nitride and Data Pattern effects on v _ t retention loss in a multilevel charge trap flash memory
IEEE Transactions on Electron Devices, 2019Co-Authors: Tingchien Zhan, Tahui Wang, Wenjer Tsai, Taocheng Lu, Kuangchao Chen, Chihyuan LuAbstract:We investigate electron and hole lateral migration in ${V}_{t}$ retention loss in a multilevel charge trap flash memory. We use hot electron program and band-to-band tunneling hot hole erase to inject various amounts of electrons and holes at the two ends of a SONOS cell. A random telegraph signal (RTS) method is used to distinguish electron and hole lateral movements in silicon nitride. In ${V}_{t}$ retention measurement, we apply a voltage to the gate or the source/drain to enhance or retard trapped charge vertical loss and lateral migration. From the evolution characteristics of RTS and ${V}_{t}$ traces in retention, we are able to identify the separate roles of electron vertical loss, electron lateral migration, and hole lateral migration in different Data Patterns. Due to the interaction of stored electrons and holes, we find that ${V}_{t}$ retention loss in a program state exhibits a turnaround characteristic as program ${V}_{t}$ level increases. ${V}_{t}$ loss at low program levels is attributed to hole lateral migration from a neighboring bit. At higher program levels, the influence of hole lateral migration is reduced and ${V}_{t}$ loss is dominated by electron vertical loss and lateral migration.
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investigation of Data Pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method
International Reliability Physics Symposium, 2018Co-Authors: Chengmin Jiang, Tahui Wang, Wenjer Tsai, Taocheng Lu, K C Chen, Chihyuan LuAbstract:Data Pattern effects on nitride charge lateral migration and V t retention loss in a charge trap flash memory is investigated. We use channel hot electron program and band-to-band tunneling hot hole erase to inject different amounts of electrons and holes at the two sides of a channel in a SONOS cell. An interface oxide trap near an injected charge packet and its associated random telegraph signal (RTS) are used as an internal probe to detect a local channel potential change resulting from trapped charge lateral migration. V t retention loss and RTS in various charge storage Patterns are characterized and analyzed. At a similar built-in electric field, nitride trapped holes are found to be more mobile than trapped electrons in lateral migration.
Georg Harder - One of the best experts on this subject based on the ideXlab platform.
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local sampling of the wigner function at telecom wavelength with loss tolerant detection of photon statistics
Physical Review Letters, 2016Co-Authors: Georg Harder, L. Motka, B. Stoklasa, Ch Silberhorn, J Rehacek, Z Hradil, L L SanchezsotoAbstract:We report the experimental point-by-point sampling of the Wigner function for nonclassical states created in an ultrafast pulsed type-II parametric down-conversion source. We use a loss-tolerant time-multiplexed detector based on a fiber-optical setup and a pair of photon-number-resolving avalanche photodiodes. By capitalizing on an expedient Data-Pattern tomography, we assess the properties of the light states with outstanding accuracy. The method allows us to reliably infer the squeezing of genuine two-mode states without any phase reference.
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Efficient algorithm for optimizing Data Pattern tomography
Physical Review A, 2014Co-Authors: L. Motka, D. Mogilevtsev, Jaroslav Rehacek, B. Stoklasa, Zdeněk Hradil, V. Karasek, Georg Harder, Ch Silberhorn, Luis L. Sánchez-sotoAbstract:We give a detailed account of an efficient search algorithm for the Data-Pattern tomography proposed by J. Rehacek, D. Mogilevtsev, and Z. Hradil [Phys. Rev. Lett. 105, 010402 (2010)], where the quantum state of a system is reconstructed without a priori knowledge about the measuring setup. The method is especially suited for experiments involving complex detectors, which are difficult to calibrate and characterize. We illustrate the approach with the case study of the homodyne detection of a nonclassical photon state.
