The Experts below are selected from a list of 240 Experts worldwide ranked by ideXlab platform
Das S Sarma - One of the best experts on this subject based on the ideXlab platform.
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spin injection through the Depletion Layer a theory of spin polarized p n junctions and solar cells
Physical Review B, 2001Co-Authors: Igor žutic, Jaroslav Fabian, Das S SarmaAbstract:A drift-diffusion model for spin-charge transport in spin-polarized p-n junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the Depletion Layer by both minority and majority carriers, making all semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized p-n junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.
S. F. Alvarado - One of the best experts on this subject based on the ideXlab platform.
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Interferometric detection of spin-polarized transport in the Depletion Layer of a metal-GaAs Schottky barrier.
Physical Review Letters, 2006Co-Authors: Gian Salis, S. F. AlvaradoAbstract:: It is shown that the Kerr rotation of spin-polarized electrons is modulated by the distance of the electrons from the sample surface. Time-resolved Kerr rotation of optically excited spin-polarized electrons in the Depletion Layer of n-doped GaAs displays fast oscillations that originate from interference between the light reflected from the semiconductor surface and from the front of the electron distribution moving into the semiconductor. Using this effect, the dynamics of the photogenerated charge carriers in the Depletion Layer of the biased Schottky barrier is measured.
Igor žutic - One of the best experts on this subject based on the ideXlab platform.
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spin injection through the Depletion Layer a theory of spin polarized p n junctions and solar cells
Physical Review B, 2001Co-Authors: Igor žutic, Jaroslav Fabian, Das S SarmaAbstract:A drift-diffusion model for spin-charge transport in spin-polarized p-n junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the Depletion Layer by both minority and majority carriers, making all semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized p-n junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.
Gian Salis - One of the best experts on this subject based on the ideXlab platform.
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Interferometric detection of spin-polarized transport in the Depletion Layer of a metal-GaAs Schottky barrier.
Physical Review Letters, 2006Co-Authors: Gian Salis, S. F. AlvaradoAbstract:: It is shown that the Kerr rotation of spin-polarized electrons is modulated by the distance of the electrons from the sample surface. Time-resolved Kerr rotation of optically excited spin-polarized electrons in the Depletion Layer of n-doped GaAs displays fast oscillations that originate from interference between the light reflected from the semiconductor surface and from the front of the electron distribution moving into the semiconductor. Using this effect, the dynamics of the photogenerated charge carriers in the Depletion Layer of the biased Schottky barrier is measured.
Jaroslav Fabian - One of the best experts on this subject based on the ideXlab platform.
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spin injection through the Depletion Layer a theory of spin polarized p n junctions and solar cells
Physical Review B, 2001Co-Authors: Igor žutic, Jaroslav Fabian, Das S SarmaAbstract:A drift-diffusion model for spin-charge transport in spin-polarized p-n junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the Depletion Layer by both minority and majority carriers, making all semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized p-n junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.