The Experts below are selected from a list of 423 Experts worldwide ranked by ideXlab platform
Kuo Hsiung Lee - One of the best experts on this subject based on the ideXlab platform.
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anti aids agents 68 the first total synthesis of a unique potent anti hiv chalcone from genus Desmos
Tetrahedron Letters, 2006Co-Authors: Kyoko Nakagawagoto, Kuo Hsiung LeeAbstract:The first total synthesis of a unique highly functionalized and potent anti-HIV chalcone 1, isolated from genus Desmos, was achieved from commercially available 2,4,6-trihydroxytoluene (3) or 2,4,6-trihydroxybenzaldehyde (2) in five (from 3) or six steps (from 2).
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anti aids agents 54 a potent anti hiv chalcone and flavonoids from genus Desmos
Bioorganic & Medicinal Chemistry Letters, 2003Co-Authors: Xi Hong Wang, Kuo Hsiung LeeAbstract:Abstract Sixteen flavonoids and their derivatives isolated from Desmos spp. were evaluated for inhibition of HIV replication in H9 lymphocyte cells. 2-Methoxy-3-methyl-4,6-dihydroxy-5-(3′-hydroxy)cinnamoylbenzaldehyde ( 12 ) and lawinal ( 6 ) demonstrated potent anti-HIV activity with EC 50 values of 0.022 and 2.30 μg/mL and therapeutic indexes of 489 and 45.2, respectively. Compound 12 appears to be an excellent lead for further anti-HIV drug development.
Claude Rosental - One of the best experts on this subject based on the ideXlab platform.
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de la demo cratie en amerique formes actuelles de la demonstration en intelligence artificielle
Actes De La Recherche En Sciences Sociales, 2002Co-Authors: Claude RosentalAbstract:Cet article livre une fraction des resultats d’un programme de recherche visant le developpement d’une sociologie historique des formes de demonstration. Il part d’une enquete portant sur les conditions de developpement a la NASA, au cours des annees 1990, d’un logiciel sophistique destine a la preparation des missions spatiales. L’analyse des conditions de la recherche met en lumiere la nature et les enjeux du recours a une forme particuliere de demonstration, les demos informatiques. Les demos s’averent constituer l’une des principales sources de mise en forme de l’activite et des relations des chercheurs en intelligence artificielle et en logique informatique de la Silicon Valley, dans la region de San Francisco. L’etude des conditions de possibilite des demos, des contraintes qui pesent sur leur exercice et de leurs usages conduit a identifier des demarches capitalistes en matiere de production demonstrative. L’analyse revele par suite la mise en place d’un regime demo-cratique aux Etats-Unis, consacrant le pouvoir non pas de la foule, par un droit de regard sur l’univers ferme des laboratoires, mais des demos et de leurs utilisateurs privilegies, a savoir les capitalistes de la science.
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de la demo cratie en amerique formes actuelles de la demonstration en intelligence artificielle
Actes De La Recherche En Sciences Sociales, 2002Co-Authors: Claude RosentalAbstract:Die Demo-kratie in Amerika. ; ; Dieser Aufsatz stellt einen Ausschnitt der Ergebnisse eines Forschungsprogramms vor, das die Entwicklung einer historischen Soziologie der Beweisfuhrung (demonstration) zum Ziel hat. Ausgangspunkt ist die Untersuchung der Rahmenbedingungen zur Entwicklung eines neuen Raumfahrtprogramms der NASA in den 1990er Jahren. Die Analyse der Tragweite einer besonderen Form der Beweisfuhrung, sogenannter informatischer «demos», in den Mittelpunkt. Diese «demos» stellen eine der Hauptquellen fur die Aufbereitung der Forschungstatigkeit und -kommunikation im Bereich der kunstlichen Intelligenz sowie der informatischen Logik im Silicon Valley bei San Francisco dar. Eine Untersuchung der Anwendungsmoglichkeiten der «demos», aber auch der mit ihnen einhergehenden Verengungen verweist auf kapitalistische Verfahren im Bereich der Beweisfiihrungsproduktion. Anschliessend fuhrt die Untersuchung vor, wie ein «demo»-kratisches System nicht die Herrschaft der Massen durch uneingeschrankten Einblick in die abgeschlossene Welt der Labors absichert, sondern vielmehr die Herrschaft der «demos» und ihrer bevorzugten Nutzer, d. h. der Wissenschaftkapitalisten.
Harald Gossner - One of the best experts on this subject based on the ideXlab platform.
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on the differences between 3d filamentation and failure of n p type drain extended mos devices under esd condition
International Reliability Physics Symposium, 2010Co-Authors: Mayank Shrivastava, S Bychikhin, D Pogany, Jens Schneider, Shojaei M Baghini, Harald Gossner, E Gornik, Ramgopal V RaoAbstract:We present differences in the ESD failure mechanisms, intrinsic behavior and various phases of filamentation of STI type DeNMOS and DePMOS devices using detailed 3D TCAD simulations, TLP and TIM experiments. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative bipolar triggering and various events during the current filamentation are compared. Measurements show that the absence of base push out in DePMOS device leads to ∼2.5X higher IT2 as compared to DeNMOS.
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part i mixed signal performance of various high voltage drain extended mos devices
IEEE Transactions on Electron Devices, 2010Co-Authors: Mayank Shrivastava, Maryam Shojaei Baghini, Harald GossnerAbstract:In this paper, the optimization issues of various drain-extended devices are discussed for input/output applications. The mixed-signal performance, impact of process variations, and gate oxide reliability of these devices are compared. Lightly doped drain MOS (LDDMOS) was found to have a moderate performance advantage as compared to shallow trench isolation (STI) and non-STI drain-extended MOS (DeMOS) devices. Non-STI DeMOS devices have improved circuit performance but suffer from the worst gate oxide reliability. Incorporating an STI region underneath the gate-drain overlap improves the gate oxide reliability, although it degrades the mixed-signal characteristics of the device. The single-halo nature of DeMOS devices has been shown to be effective in suppressing the short-channel effects.
Kyoko Nakagawagoto - One of the best experts on this subject based on the ideXlab platform.
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anti aids agents 68 the first total synthesis of a unique potent anti hiv chalcone from genus Desmos
Tetrahedron Letters, 2006Co-Authors: Kyoko Nakagawagoto, Kuo Hsiung LeeAbstract:The first total synthesis of a unique highly functionalized and potent anti-HIV chalcone 1, isolated from genus Desmos, was achieved from commercially available 2,4,6-trihydroxytoluene (3) or 2,4,6-trihydroxybenzaldehyde (2) in five (from 3) or six steps (from 2).
Mayank Shrivastava - One of the best experts on this subject based on the ideXlab platform.
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on the differences between 3d filamentation and failure of n p type drain extended mos devices under esd condition
International Reliability Physics Symposium, 2010Co-Authors: Mayank Shrivastava, S Bychikhin, D Pogany, Jens Schneider, Shojaei M Baghini, Harald Gossner, E Gornik, Ramgopal V RaoAbstract:We present differences in the ESD failure mechanisms, intrinsic behavior and various phases of filamentation of STI type DeNMOS and DePMOS devices using detailed 3D TCAD simulations, TLP and TIM experiments. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative bipolar triggering and various events during the current filamentation are compared. Measurements show that the absence of base push out in DePMOS device leads to ∼2.5X higher IT2 as compared to DeNMOS.
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part i mixed signal performance of various high voltage drain extended mos devices
IEEE Transactions on Electron Devices, 2010Co-Authors: Mayank Shrivastava, Maryam Shojaei Baghini, Harald GossnerAbstract:In this paper, the optimization issues of various drain-extended devices are discussed for input/output applications. The mixed-signal performance, impact of process variations, and gate oxide reliability of these devices are compared. Lightly doped drain MOS (LDDMOS) was found to have a moderate performance advantage as compared to shallow trench isolation (STI) and non-STI drain-extended MOS (DeMOS) devices. Non-STI DeMOS devices have improved circuit performance but suffer from the worst gate oxide reliability. Incorporating an STI region underneath the gate-drain overlap improves the gate oxide reliability, although it degrades the mixed-signal characteristics of the device. The single-halo nature of DeMOS devices has been shown to be effective in suppressing the short-channel effects.