The Experts below are selected from a list of 309 Experts worldwide ranked by ideXlab platform
Yeshaiahu Fainman - One of the best experts on this subject based on the ideXlab platform.
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Wavelength selective coupler on silicon for applications in wavelength division multiplexing
IEEE Photonics Society Summer Topicals 2010, 2010Co-Authors: Dawn T. H. Tan, Kazuhiro Ikeda, Steve Zamek, Amit Mizrahi, Maziar P. Nezhad, Yeshaiahu FainmanAbstract:A wavelength selective add/drop filter based on coupled vertical gratings is proposed for applications in wavelength division multiplexing on silicon. We demonstrate tailoring of Device Bandwidth and channel location.
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Coupled vertical gratings on silicon for applications in wavelength division multiplexing
Optoelectronic Interconnects and Component Integration IX, 2010Co-Authors: Dawn T. H. Tan, Kazuhiro Ikeda, Amit Mizrahi, Maziar P. Nezhad, Yeshaiahu FainmanAbstract:An add/drop filter based on coupled vertical gratings is presented on silicon. We analyze the Device theoretically and experimentally and show that the concept is easily extended to multi-channel add/drop filters. We demonstrate tunability of the Device Bandwidth and operation wavelength. The free spectral range of the Device exceeds the Bandwidth used in wavelength division multiplexing systems, which makes it ideally suited for use in such systems.
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Chip-scale dispersion engineering using chirped vertical gratings
Optics letters, 2008Co-Authors: Dawn T. H. Tan, Kazuhiro Ikeda, R.e. Saperstein, Boris Slutsky, Yeshaiahu FainmanAbstract:A strongly coupled, chirped Bragg grating made by sinusoidally modulating the sidewalls of a silicon waveguide is designed, fabricated, and experimentally characterized. By varying the Device parameters, the operating wavelength, Device Bandwidth, sign (normal or anomalous), and magnitude of group-velocity dispersion may be engineered for specific photonic applications. Asymmetric Blackman apodization is best suited for maximizing the useable Bandwidth while providing good ripple suppression. Dispersion values up to 7.0 x 10(5) ps/nm/km are demonstrated at 1.55 microm.
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Dispersion compensation for on-chip ultrafast signal processing
2008 Digest of the IEEE LEOS Summer Topical Meetings, 2008Co-Authors: Dawn T. H. Tan, Kazuhiro Ikeda, R.e. Saperstein, Boris Slutsky, Yeshaiahu FainmanAbstract:A strongly coupled, chirped Bragg grating with sinusoidally modulated sidewalls is proposed for on-chip dispersion compensation. The Device Bandwidth, magnitude and sign of dispersion may be engineered for specific dispersion compensation requirements.
Dawn T. H. Tan - One of the best experts on this subject based on the ideXlab platform.
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Wavelength selective coupler on silicon for applications in wavelength division multiplexing
IEEE Photonics Society Summer Topicals 2010, 2010Co-Authors: Dawn T. H. Tan, Kazuhiro Ikeda, Steve Zamek, Amit Mizrahi, Maziar P. Nezhad, Yeshaiahu FainmanAbstract:A wavelength selective add/drop filter based on coupled vertical gratings is proposed for applications in wavelength division multiplexing on silicon. We demonstrate tailoring of Device Bandwidth and channel location.
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Coupled vertical gratings on silicon for applications in wavelength division multiplexing
Optoelectronic Interconnects and Component Integration IX, 2010Co-Authors: Dawn T. H. Tan, Kazuhiro Ikeda, Amit Mizrahi, Maziar P. Nezhad, Yeshaiahu FainmanAbstract:An add/drop filter based on coupled vertical gratings is presented on silicon. We analyze the Device theoretically and experimentally and show that the concept is easily extended to multi-channel add/drop filters. We demonstrate tunability of the Device Bandwidth and operation wavelength. The free spectral range of the Device exceeds the Bandwidth used in wavelength division multiplexing systems, which makes it ideally suited for use in such systems.
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Chip-scale dispersion engineering using chirped vertical gratings
Optics letters, 2008Co-Authors: Dawn T. H. Tan, Kazuhiro Ikeda, R.e. Saperstein, Boris Slutsky, Yeshaiahu FainmanAbstract:A strongly coupled, chirped Bragg grating made by sinusoidally modulating the sidewalls of a silicon waveguide is designed, fabricated, and experimentally characterized. By varying the Device parameters, the operating wavelength, Device Bandwidth, sign (normal or anomalous), and magnitude of group-velocity dispersion may be engineered for specific photonic applications. Asymmetric Blackman apodization is best suited for maximizing the useable Bandwidth while providing good ripple suppression. Dispersion values up to 7.0 x 10(5) ps/nm/km are demonstrated at 1.55 microm.
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Dispersion compensation for on-chip ultrafast signal processing
2008 Digest of the IEEE LEOS Summer Topical Meetings, 2008Co-Authors: Dawn T. H. Tan, Kazuhiro Ikeda, R.e. Saperstein, Boris Slutsky, Yeshaiahu FainmanAbstract:A strongly coupled, chirped Bragg grating with sinusoidally modulated sidewalls is proposed for on-chip dispersion compensation. The Device Bandwidth, magnitude and sign of dispersion may be engineered for specific dispersion compensation requirements.
Kazuhiro Ikeda - One of the best experts on this subject based on the ideXlab platform.
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Wavelength selective coupler on silicon for applications in wavelength division multiplexing
IEEE Photonics Society Summer Topicals 2010, 2010Co-Authors: Dawn T. H. Tan, Kazuhiro Ikeda, Steve Zamek, Amit Mizrahi, Maziar P. Nezhad, Yeshaiahu FainmanAbstract:A wavelength selective add/drop filter based on coupled vertical gratings is proposed for applications in wavelength division multiplexing on silicon. We demonstrate tailoring of Device Bandwidth and channel location.
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Coupled vertical gratings on silicon for applications in wavelength division multiplexing
Optoelectronic Interconnects and Component Integration IX, 2010Co-Authors: Dawn T. H. Tan, Kazuhiro Ikeda, Amit Mizrahi, Maziar P. Nezhad, Yeshaiahu FainmanAbstract:An add/drop filter based on coupled vertical gratings is presented on silicon. We analyze the Device theoretically and experimentally and show that the concept is easily extended to multi-channel add/drop filters. We demonstrate tunability of the Device Bandwidth and operation wavelength. The free spectral range of the Device exceeds the Bandwidth used in wavelength division multiplexing systems, which makes it ideally suited for use in such systems.
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Chip-scale dispersion engineering using chirped vertical gratings
Optics letters, 2008Co-Authors: Dawn T. H. Tan, Kazuhiro Ikeda, R.e. Saperstein, Boris Slutsky, Yeshaiahu FainmanAbstract:A strongly coupled, chirped Bragg grating made by sinusoidally modulating the sidewalls of a silicon waveguide is designed, fabricated, and experimentally characterized. By varying the Device parameters, the operating wavelength, Device Bandwidth, sign (normal or anomalous), and magnitude of group-velocity dispersion may be engineered for specific photonic applications. Asymmetric Blackman apodization is best suited for maximizing the useable Bandwidth while providing good ripple suppression. Dispersion values up to 7.0 x 10(5) ps/nm/km are demonstrated at 1.55 microm.
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Dispersion compensation for on-chip ultrafast signal processing
2008 Digest of the IEEE LEOS Summer Topical Meetings, 2008Co-Authors: Dawn T. H. Tan, Kazuhiro Ikeda, R.e. Saperstein, Boris Slutsky, Yeshaiahu FainmanAbstract:A strongly coupled, chirped Bragg grating with sinusoidally modulated sidewalls is proposed for on-chip dispersion compensation. The Device Bandwidth, magnitude and sign of dispersion may be engineered for specific dispersion compensation requirements.
Abhirup Barman - One of the best experts on this subject based on the ideXlab platform.
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Small and large signal analysis using circuit model of InGaAs/InP based uni-travel carrier photodiode
Optical and Quantum Electronics, 2017Co-Authors: Senjuti Khanra, Ipsita Sengupta, Abhirup BarmanAbstract:An equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and few important properties of the Device such as the electrical and optical characteristics are evaluated by employing advanced Device physics. Circuit model incorporates chip and package parasitic of the Device quite simply to provide practical behaviour of UTC-PD. We have developed small signal ac circuit model which is useful for the analysis of low power modulation characteristics of the Device and dc circuit model which is advantageous to find wavelength dependent responsivity fairly accurately. At high optical input power the Device Bandwidth is found to be increased through enhancement of self-induced field in the absorption region and high output power can be derived from the Device when absorption width is large. Such condition calls for large signal analysis. We have developed large signal circuit model by combining few mathematical transformations with small signal circuit model with different circuit element values. Our large signal model is unique that the same circuit can be used for both small and large signal analysis. With large signal model the optical power induced Bandwidth improvement and output photocurrent saturation are explained. Large signal model is validated through linearity and IP3 analysis which found close agreement with the measured results.
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Photoresponse characteristics from computationally efficient dynamic model of uni-traveling carrier photodiode
Optical and Quantum Electronics, 2016Co-Authors: Senjuti Khanra, Abhirup BarmanAbstract:A time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is developed in terms of coupled differential equations of incident photon flux and photo generated carrier density rates. For fast computation of model parameters linear approximation of material absorption coefficient is made with carrier density. Wavelength and bias voltage dependent responsivity is well demonstrated by the model and their values at different absorption layer widths agree well with the experimental results. Optical power induced output photocurrent saturation is also explained. Furthermore, from the temporal variation of output photocurrent, estimation of Device Bandwidth is shown.
A. C. Gossard - One of the best experts on this subject based on the ideXlab platform.
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OntheFeasibility offew-THzBipolar Transistors
2007Co-Authors: U. Singisetti, M. Wistey, G. J. Burek, A. C. GossardAbstract:We review thelimits facedinscaling ofInP-based bipolar transistors forincreased Device Bandwidth. Emitter and basecontact resistivities andICthermal resistance arethemajor limits toincreased Device Bandwidth. Devices with1-1.5 THz simultaneous f,andf.a. arefeasible; these will enable 750GHz monolithic amplifiers andmedium-scale digital ICsat 400-500 GHzclock rate.
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On the Feasibility of few-THz Bipolar Transistors
2007 IEEE Bipolar BiCMOS Circuits and Technology Meeting, 2007Co-Authors: Mark J. W. Rodwell, U. Singisetti, M. Wistey, G. J. Burek, Erik Lind, Z. Griffith, Adam M. Crook, Seth R. Bank, A. C. GossardAbstract:We review the limits faced in seating of InP-based bipolar transistors for increased Device Bandwidth. Emitter and base contact resistivities and IC thermal resistance are the major limits to increased Device Bandwidth. Devices with 1-1.5 THz simultaneous ftau, and fmax are feasible; these will enable 750 GHz monolithic amplifiers and medium-scale digital ICs at ~400-500 GHz clock rate.
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Frequency Limits of InP-based Integrated Circuits
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007Co-Authors: Mark J. W. Rodwell, U. Singisetti, M. Wistey, G. J. Burek, Erik Lind, Z. Griffith, Adam M. Crook, Seth R. Bank, A. C. GossardAbstract:We examine the limits in scaling of InP-based bipolar and field effect transistors for increased Device Bandwidth. With InP-based HBTs, emitter and base contact resistivities and IC thermal resistance are the major limits to increased Device Bandwidth; Devices with 1-1.5 THz simultaneous ftau and fmax are feasible. Major challenges faced in developing either InGaAs HEMTs having THz cutoff frequencies or InGaAs-channel MOSFETs having drive current consistent with the 22 nm ITRS objectives include the low two-dimensional effective density of states and the high bound state energies in narrow quantum wells.