The Experts below are selected from a list of 276 Experts worldwide ranked by ideXlab platform

Carlton G Willson - One of the best experts on this subject based on the ideXlab platform.

  • Nanoimprint Lithography Materials Development for Semiconductor Device Fabrication
    Annual Review of Materials Research, 2009
    Co-Authors: Elizabeth A. Costner, Michael W. Lin, Wei-lun Jen, Carlton G Willson
    Abstract:

    The term nanoimprint lithography (NIL) describes a number of processes used to form nanoscale structures by molding or embossing. Step and flash imprint lithography (S-FIL, a trademark of Molecular Imprints, Inc.) is a variant of NIL that can be performed at room temperature and low pressure. In S-FIL, a low-viscosity liquid imprint material is hardened in a patterned template by exposure to UV light. S-FIL is ideally suited to integrated- circuit Device Fabrication. Materials development for S-FIL has progressed significantly since its introduction in 1999.We discuss the status of materi- als development, with specific emphasis on the imprint material and func- tional materials, template Fabrication and release layers, and S-FIL process variations. 155

Federico Roncaroli - One of the best experts on this subject based on the ideXlab platform.

  • Photofunctional metal-organic framework thin films for sensing, catalysis and Device Fabrication
    Inorganica Chimica Acta, 2020
    Co-Authors: Germán E. Gomez, Federico Roncaroli
    Abstract:

    Abstract Metal Organic Frameworks (MOFs) constitute a developing class of materials constructed by metallic ions or inorganic clusters bridged by organic ligands, generating 2D or 3D extended porous crystalline structures. Their physical and chemical properties can be dramatically changed since the huge database of metal centers and type of ligands available for the design and construction MOFs. Besides, the implementation of anchored MOF onto different substrates opens up to an emerging field of Device Fabrication for specific applications. In this review we surveyed the recent progress and developments on MOF for sensing, catalylisis, photovoltaics, up conversion, and LED Fabrication.

Elizabeth A. Costner - One of the best experts on this subject based on the ideXlab platform.

  • Nanoimprint Lithography Materials Development for Semiconductor Device Fabrication
    Annual Review of Materials Research, 2009
    Co-Authors: Elizabeth A. Costner, Michael W. Lin, Wei-lun Jen, Carlton G Willson
    Abstract:

    The term nanoimprint lithography (NIL) describes a number of processes used to form nanoscale structures by molding or embossing. Step and flash imprint lithography (S-FIL, a trademark of Molecular Imprints, Inc.) is a variant of NIL that can be performed at room temperature and low pressure. In S-FIL, a low-viscosity liquid imprint material is hardened in a patterned template by exposure to UV light. S-FIL is ideally suited to integrated- circuit Device Fabrication. Materials development for S-FIL has progressed significantly since its introduction in 1999.We discuss the status of materi- als development, with specific emphasis on the imprint material and func- tional materials, template Fabrication and release layers, and S-FIL process variations. 155

Andreas Fuhrer - One of the best experts on this subject based on the ideXlab platform.

  • CMOS platform for atomic-scale Device Fabrication.
    Nanotechnology, 2018
    Co-Authors: Tomáš Škereň, Nikola Pascher, Arnaud Garnier, Patrick Reynaud, Emmanuel Rolland, Aurélie Thuaire, Daniel Widmer, Xavier Jehl, Andreas Fuhrer
    Abstract:

    Controlled atomic scale Fabrication based on scanning probe patterning or surface assembly typically involves a complex process flow, stringent requirements for an ultra-high vacuum environment, long Fabrication times and, consequently, limited throughput and Device yield. We demonstrate a Device platform that overcomes these limitations by integrating scanning-probe based dopant Device Fabrication with a CMOS-compatible process flow. Silicon on insulator substrates are used featuring a reconstructed Si(001):H surface that is protected by a capping chip and has pre-implanted contacts ready for scanning tunneling microscope (STM) patterning. Processing in ultra-high vacuum is thereby reduced to a few critical steps. Subsequent reintegration of the samples into the CMOS process flow opens the door to successful application of STM fabricated dopant Devices in more complex Device architectures. Full functionality of this approach is demonstrated with magnetotransport measurements on degenerately doped STM patterned Si:P nanowires up to room temperature.

Hideo Hosono - One of the best experts on this subject based on the ideXlab platform.