The Experts below are selected from a list of 56313 Experts worldwide ranked by ideXlab platform
Roel Baets - One of the best experts on this subject based on the ideXlab platform.
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ce yig Silicon on Insulator waveguide optical isolator realized by adhesive bonding
Optics Express, 2012Co-Authors: Samir Ghosh, S. Keyvavinia, Tetsuya Mizumoto, Gunther Roelkens, Roel BaetsAbstract:A waveguide optical isolator realized by adhesive bonding of a garnet die, containing a Ce:YIG magneto-optic layer, on a Silicon-on-Insulator waveguide circuit is demonstrated. The die was bonded on top of an asymmetric Mach-Zehnder interferometer using a 100nm thick DVS-BCB adhesive bonding layer. A static magnetic field applied perpendicular to the light propagation direction results in a non-reciprocal phase shift for the fundamental quasi-TM mode in the hybrid waveguide geometry. A maximum optical isolation of 25 dB is obtained.
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Silicon-on-Insulator spectral filters fabricated with CMOS technology
IEEE Journal on Selected Topics in Quantum Electronics, 2010Co-Authors: Wim Bogaerts, Katrien De Vos, Dries Van Thourhout, Joost Brouckaert, Shankar Kumar Selvaraja, Pieter Dumon, Roel BaetsAbstract:We give an overview of recent progress in passive spectral filters and demultiplexers based on Silicon-on-Insulator photonic wire waveguides: ring resonators, interferometers, arrayed waveguide gratings, and echelle diffraction gratings, all benefit from the high-index contrast possible with Silicon photonics. We show how the current generation of devices has improved crosstalk levels, insertion loss, and uniformity due to an improved fabrication process based on 193 nm lithography.
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tuning of Silicon on Insulator ring resonators with liquid crystal cladding using the longitudinal field component
Optics Letters, 2009Co-Authors: Wout De Cort, Anibal F Fernandez, Jeroen Beeckman, R. James, Roel Baets, Kristiaan NeytsAbstract:We show tuning of the resonance wavelength of Silicon-on-Insulator microring resonators with liquid crystal cladding. The electro-optic effect of the liquid crystal causes a decrease in effective refractive index for the TE-polarized light in the waveguides. Tuning of the liquid crystal birefringence affects primarily the longitudinal component of the electric field. We achieve a tuning range of 0.6 nm. Through simulation and experiment we perform a thorough study of this phenomenon.
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fabrication of photonic wire and crystal circuits in Silicon on Insulator using 193 nm optical lithography
Journal of Lightwave Technology, 2009Co-Authors: Shankar Kumar Selvaraja, D. Van Thourhout, Patrick Jaenen, Wim Bogaerts, Pieter Dumon, Roel BaetsAbstract:High-index contrast Silicon-on-Insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in Silicon-on-Insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90deg bend of 5-mum radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits.
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High efficiency grating coupler between Silicon-on-Insulator waveguides and perfectly vertical optical fibers
Optics Letters, 2007Co-Authors: Gunther Roelkens, D. Van Thourhout, Roel BaetsAbstract:A high-efficiency waveguide-to-fiber grating coupler for Silicon-on-Insulator waveguides was designed. Perfectly vertical fiber coupling is achieved by using an asymmetric grating structure to suppress the second-order Bragg reflection from the grating. The ability to use a perfectly vertical positioned optical fiber simplifies the packaging of the photonic integrated circuit. A coupling efficiency of 80% at a wavelength of 1.55 μm is obtained.
Wim Bogaerts - One of the best experts on this subject based on the ideXlab platform.
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high efficiency fiber to chip grating couplers realized using an advanced cmos compatible Silicon on Insulator platform
Optics Express, 2010Co-Authors: Diedrik Vermeulen, Dries Van Thourhout, Wim Bogaerts, Shankar Kumar Selvaraja, G Lepage, Peter Verheyen, P Absil, Gunther RoelkensAbstract:A new generation of Silicon-on-Insulator fiber-to-chip grating couplers which use a Silicon overlay to enhance the directionality and thereby the coupling efficiency is presented. Devices are realized on a 200mm wafer in a CMOS pilot line. The fabricated fiber couplers show a coupling efficiency of −1.6dB and a 3dB bandwidth of 80nm.
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Silicon-on-Insulator spectral filters fabricated with CMOS technology
IEEE Journal on Selected Topics in Quantum Electronics, 2010Co-Authors: Wim Bogaerts, Katrien De Vos, Dries Van Thourhout, Joost Brouckaert, Shankar Kumar Selvaraja, Pieter Dumon, Roel BaetsAbstract:We give an overview of recent progress in passive spectral filters and demultiplexers based on Silicon-on-Insulator photonic wire waveguides: ring resonators, interferometers, arrayed waveguide gratings, and echelle diffraction gratings, all benefit from the high-index contrast possible with Silicon photonics. We show how the current generation of devices has improved crosstalk levels, insertion loss, and uniformity due to an improved fabrication process based on 193 nm lithography.
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fabrication of photonic wire and crystal circuits in Silicon on Insulator using 193 nm optical lithography
Journal of Lightwave Technology, 2009Co-Authors: Shankar Kumar Selvaraja, D. Van Thourhout, Patrick Jaenen, Wim Bogaerts, Pieter Dumon, Roel BaetsAbstract:High-index contrast Silicon-on-Insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in Silicon-on-Insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90deg bend of 5-mum radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits.
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Compact focusing grating couplers for Silicon-on-Insulator integrated circuits
IEEE Photonics Technology Letters, 2007Co-Authors: Frederik Van Laere, Jonathan Schrauwen, Tom Claes, Dries Van Thourhout, Dirk Taillaert, Liam O'faolain, Stijn Scheerlinck, Wim Bogaerts, Roel BaetsAbstract:We report experimental results on compact and broadband focusing grating couplers, both in Silicon-on-Insulator (SOI) and gold on SOL An eight-fold length reduction of the coupling structure from fiber to photonic wire in SOI, as compared to a linear grating and adiabatic taper, is obtained, without performance penalty. A proof of principle is given for a focusing grating coupler in gold on SOI, with 20% fiber-to-focus efficiency.
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Compact Wavelength-Selective Functions in Silicon-on-Insulator Photonic Wires
IEEE Journal of Selected Topics in Quantum Electronics, 2006Co-Authors: Wim Bogaerts, D. Van Thourhout, Vincent Wiaux, Patrick Jaenen, Dirk Taillaert, Stephan Beckx, Johan Wouters, Pieter Dumon, Roel BaetsAbstract:We present a number of compact wavelength-selective elements implemented in Silicon-on-Insulator (SOI) photonic wires. These include arrayed waveguide gratings (AWGs), Mach-Zehnder lattice filters (MZLFs), and ring resonators. The circuits were fabricated with deep UV lithography. We also address the sensitivity of photonic wires to phase noise by selectively broadening the waveguides, and demonstrate this in a compact AWG with -20 dB crosstalk and an insertion loss of 2.2 dB for the center channels
Gunther Roelkens - One of the best experts on this subject based on the ideXlab platform.
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ultra thin dvs bcb adhesive bonding of iii v wafers dies and multiple dies to a patterned Silicon on Insulator substrate
Optical Materials Express, 2013Co-Authors: Shahram Keyvaninia, Muhammad Muneeb, Van D Thourhout, S Stankovic, Van Pj Rene Veldhoven, Gunther RoelkensAbstract:Heterogeneous integration of III-V semiconductor materials on a Silicon-on-Insulator (SOI) platform has recently emerged as one of the most promising methods for the fabrication of active photonic devices in Silicon photonics. For this integration, it is essential to have a reliable and robust bonding procedure, which also provides a uniform and ultra-thin bonding layer for an effective optical coupling between III-V active layers and SOI waveguides. A new process for bonding of III-V dies to processed Silicon-on-Insulator waveguide circuits using divinylsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a commercial wafer bonder. This “cold bonding” method significantly simplifies the bonding preparation for machine-based bonding both for die and wafer-scale bonding. High-quality bonding, with ultra-thin bonding layers (<50 nm) is demonstrated, which is suitable for the fabrication of heterogeneously integrated photonic devices, specifically hybrid III-V/Si lasers.
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ce yig Silicon on Insulator waveguide optical isolator realized by adhesive bonding
Optics Express, 2012Co-Authors: Samir Ghosh, S. Keyvavinia, Tetsuya Mizumoto, Gunther Roelkens, Roel BaetsAbstract:A waveguide optical isolator realized by adhesive bonding of a garnet die, containing a Ce:YIG magneto-optic layer, on a Silicon-on-Insulator waveguide circuit is demonstrated. The die was bonded on top of an asymmetric Mach-Zehnder interferometer using a 100nm thick DVS-BCB adhesive bonding layer. A static magnetic field applied perpendicular to the light propagation direction results in a non-reciprocal phase shift for the fundamental quasi-TM mode in the hybrid waveguide geometry. A maximum optical isolation of 25 dB is obtained.
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high efficiency fiber to chip grating couplers realized using an advanced cmos compatible Silicon on Insulator platform
Optics Express, 2010Co-Authors: Diedrik Vermeulen, Dries Van Thourhout, Wim Bogaerts, Shankar Kumar Selvaraja, G Lepage, Peter Verheyen, P Absil, Gunther RoelkensAbstract:A new generation of Silicon-on-Insulator fiber-to-chip grating couplers which use a Silicon overlay to enhance the directionality and thereby the coupling efficiency is presented. Devices are realized on a 200mm wafer in a CMOS pilot line. The fabricated fiber couplers show a coupling efficiency of −1.6dB and a 3dB bandwidth of 80nm.
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hybrid inp based photonic crystal lasers on Silicon on Insulator wires
Applied Physics Letters, 2009Co-Authors: Y Halioua, Gunther Roelkens, T J Karle, F Raineri, I Sagnes, P Monnier, Dries Van ThourhoutAbstract:We report on InP-based photonic crystal lasers operating at 1.585 μm at room temperature, integrated with and evanescently coupled to Silicon on Insulator (SOI) waveguides. By optically pumping at 1.18 μm through the SOI wires, pulsed laser emission from line defect photonic crystal waveguides accurately aligned (<30 nm) to the Silicon circuitry is demonstrated.
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iii v photonic crystal lasers heterogeneously bonded to Silicon on Insulator waveguides
International Conference on Transparent Optical Networks, 2009Co-Authors: T J Karle, Gunther Roelkens, Y Halioua, F Raineri, I Sagnes, F Van Laere, Dries Van ThourhoutAbstract:We report on the fabrication of InP-based 2D photonic crystal lasers operating around λ = 1.55 µm at room temperature, integrated with and evanescently coupled to Silicon-on-Insulator waveguides. Pulsed laser operation is obtained from a line defect photonic crystal waveguide accurately aligned (≪ 30 nm) on top the SOI circuitry. This active-passive integration is demonstrated using an adhesive bonding technique. Lasing action is demonstrated for several low group velocity modes of the photonic crystal defect waveguide.
Pieter Dumon - One of the best experts on this subject based on the ideXlab platform.
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Silicon-on-Insulator spectral filters fabricated with CMOS technology
IEEE Journal on Selected Topics in Quantum Electronics, 2010Co-Authors: Wim Bogaerts, Katrien De Vos, Dries Van Thourhout, Joost Brouckaert, Shankar Kumar Selvaraja, Pieter Dumon, Roel BaetsAbstract:We give an overview of recent progress in passive spectral filters and demultiplexers based on Silicon-on-Insulator photonic wire waveguides: ring resonators, interferometers, arrayed waveguide gratings, and echelle diffraction gratings, all benefit from the high-index contrast possible with Silicon photonics. We show how the current generation of devices has improved crosstalk levels, insertion loss, and uniformity due to an improved fabrication process based on 193 nm lithography.
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fabrication of photonic wire and crystal circuits in Silicon on Insulator using 193 nm optical lithography
Journal of Lightwave Technology, 2009Co-Authors: Shankar Kumar Selvaraja, D. Van Thourhout, Patrick Jaenen, Wim Bogaerts, Pieter Dumon, Roel BaetsAbstract:High-index contrast Silicon-on-Insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in Silicon-on-Insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90deg bend of 5-mum radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits.
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Compact Wavelength-Selective Functions in Silicon-on-Insulator Photonic Wires
IEEE Journal of Selected Topics in Quantum Electronics, 2006Co-Authors: Wim Bogaerts, D. Van Thourhout, Vincent Wiaux, Patrick Jaenen, Dirk Taillaert, Stephan Beckx, Johan Wouters, Pieter Dumon, Roel BaetsAbstract:We present a number of compact wavelength-selective elements implemented in Silicon-on-Insulator (SOI) photonic wires. These include arrayed waveguide gratings (AWGs), Mach-Zehnder lattice filters (MZLFs), and ring resonators. The circuits were fabricated with deep UV lithography. We also address the sensitivity of photonic wires to phase noise by selectively broadening the waveguides, and demonstrate this in a compact AWG with -20 dB crosstalk and an insertion loss of 2.2 dB for the center channels
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efficient Silicon on Insulator fiber coupler fabricated using 248 nm deep uv lithography
IEEE Photonics Technology Letters, 2005Co-Authors: Gunther Roelkens, D. Van Thourhout, Wim Bogaerts, Pieter Dumon, R BaetsAbstract:We present a Silicon-on-Insulator (SOI) waveguide to fiber coupler fabricated using 248-nm-deep ultraviolet lithography. The loss of the taper structure is around 1 dB while the coupling loss from a lensed fiber into a 590-nm-wide SOI waveguide was measured to be 1.9 dB.
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optical bistability and pulsating behaviour in Silicon on Insulator ring resonator structures
Optics Express, 2005Co-Authors: Gino Priem, D. Van Thourhout, Wim Bogaerts, Pieter Dumon, Geert Morthier, Roel BaetsAbstract:We demonstrate optical bistability in a Silicon-on-Insulator two-bus ring resonator with input powers as low as 0.3mW . We evaluate the importance of the different nonlinear contributions and derive time constants for carrier and thermal relaxation effects. In some cases, we also observe pulsation due to interaction between the dominant nonlinear effects. Such a behaviour may be problematic for possible memory and switching operations. Alternatively, it could be used for (tunable) pulse generation.
D. Van Thourhout - One of the best experts on this subject based on the ideXlab platform.
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fabrication of photonic wire and crystal circuits in Silicon on Insulator using 193 nm optical lithography
Journal of Lightwave Technology, 2009Co-Authors: Shankar Kumar Selvaraja, D. Van Thourhout, Patrick Jaenen, Wim Bogaerts, Pieter Dumon, Roel BaetsAbstract:High-index contrast Silicon-on-Insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in Silicon-on-Insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90deg bend of 5-mum radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits.
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High efficiency grating coupler between Silicon-on-Insulator waveguides and perfectly vertical optical fibers
Optics Letters, 2007Co-Authors: Gunther Roelkens, D. Van Thourhout, Roel BaetsAbstract:A high-efficiency waveguide-to-fiber grating coupler for Silicon-on-Insulator waveguides was designed. Perfectly vertical fiber coupling is achieved by using an asymmetric grating structure to suppress the second-order Bragg reflection from the grating. The ability to use a perfectly vertical positioned optical fiber simplifies the packaging of the photonic integrated circuit. A coupling efficiency of 80% at a wavelength of 1.55 μm is obtained.
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Compact Wavelength-Selective Functions in Silicon-on-Insulator Photonic Wires
IEEE Journal of Selected Topics in Quantum Electronics, 2006Co-Authors: Wim Bogaerts, D. Van Thourhout, Vincent Wiaux, Patrick Jaenen, Dirk Taillaert, Stephan Beckx, Johan Wouters, Pieter Dumon, Roel BaetsAbstract:We present a number of compact wavelength-selective elements implemented in Silicon-on-Insulator (SOI) photonic wires. These include arrayed waveguide gratings (AWGs), Mach-Zehnder lattice filters (MZLFs), and ring resonators. The circuits were fabricated with deep UV lithography. We also address the sensitivity of photonic wires to phase noise by selectively broadening the waveguides, and demonstrate this in a compact AWG with -20 dB crosstalk and an insertion loss of 2.2 dB for the center channels
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efficient Silicon on Insulator fiber coupler fabricated using 248 nm deep uv lithography
IEEE Photonics Technology Letters, 2005Co-Authors: Gunther Roelkens, D. Van Thourhout, Wim Bogaerts, Pieter Dumon, R BaetsAbstract:We present a Silicon-on-Insulator (SOI) waveguide to fiber coupler fabricated using 248-nm-deep ultraviolet lithography. The loss of the taper structure is around 1 dB while the coupling loss from a lensed fiber into a 590-nm-wide SOI waveguide was measured to be 1.9 dB.
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optical bistability and pulsating behaviour in Silicon on Insulator ring resonator structures
Optics Express, 2005Co-Authors: Gino Priem, D. Van Thourhout, Wim Bogaerts, Pieter Dumon, Geert Morthier, Roel BaetsAbstract:We demonstrate optical bistability in a Silicon-on-Insulator two-bus ring resonator with input powers as low as 0.3mW . We evaluate the importance of the different nonlinear contributions and derive time constants for carrier and thermal relaxation effects. In some cases, we also observe pulsation due to interaction between the dominant nonlinear effects. Such a behaviour may be problematic for possible memory and switching operations. Alternatively, it could be used for (tunable) pulse generation.