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Diffusion

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Diffusion - Free Register to Access Experts & Abstracts

Stefan W. Glunz - One of the best experts on this subject based on the ideXlab platform.

  • Diffusion lengths of silicon solar cells from luminescence images
    Journal of Applied Physics, 2007
    Co-Authors: Peter Wurfel, ERICH SCHAFFER, Wilhelm Warta, Tom Puzzer, Thorsten Trupke, Stefan W. Glunz
    Abstract:

    A method for spatially resolved measurement of the minority carrier\nDiffusion length in silicon wafers and in silicon solar cells is\nintroduced. The method, which is based on measuring the ratio of\ntwo luminescence images taken with two different spectral filters,\nis applicable, in principle, to both photoluminescence and electroluminescence\nmeasurements and is demonstrated experimentally by electroluminescence\nmeasurements on a multicrystalline silicon solar cell. Good agreement\nis observed with the Diffusion length distribution obtained from\na spectrally resolved light beam induced current map. In contrast\nto the determination of Diffusion lengths from one single luminescence\nimage, the method proposed here gives absolute values of the Diffusion\nlength and, in comparison, it is much less sensitive to lateral voltage\nvariations across the cell area as caused by local variations of\nthe series resistance. It is also shown that measuring the ratio\nof two luminescence images allows distinguishing shunts or surface\ndefects from bulk defects.

Jeffrey E. Cotter - One of the best experts on this subject based on the ideXlab platform.

  • The influence of Diffusion-induced dislocations on high efficiency silicon solar cells
    IEEE Transactions on Electron Devices, 2006
    Co-Authors: Peter J. Cousins, Jeffrey E. Cotter
    Abstract:

    Heavy boron and phosphorus Diffusions are used in many high efficiency, monocrystalline silicon solar cell designs to form localized contact Diffusions and back surface fields. It is important to cell performance that these Diffusion processes do not increase bulk recombination by the introduction of lattice defects. This paper investigates the effect of boron and phosphorus misfit dislocation networks on the bulk recombination parameters, and performance of high efficiency silicon solar cells. It demonstrates that the formation of either a boron or phosphorus misfit dislocation network generates bulk asymmetric Shockley-Read-Hall recombination centers, and that these adversely affect the current-voltage curve, local ideality factor, and ultimately the performance of p-type silicon solar cells.

Peter Wurfel - One of the best experts on this subject based on the ideXlab platform.

  • Diffusion lengths of silicon solar cells from luminescence images
    Journal of Applied Physics, 2007
    Co-Authors: Peter Wurfel, ERICH SCHAFFER, Wilhelm Warta, Tom Puzzer, Thorsten Trupke, Stefan W. Glunz
    Abstract:

    A method for spatially resolved measurement of the minority carrier\nDiffusion length in silicon wafers and in silicon solar cells is\nintroduced. The method, which is based on measuring the ratio of\ntwo luminescence images taken with two different spectral filters,\nis applicable, in principle, to both photoluminescence and electroluminescence\nmeasurements and is demonstrated experimentally by electroluminescence\nmeasurements on a multicrystalline silicon solar cell. Good agreement\nis observed with the Diffusion length distribution obtained from\na spectrally resolved light beam induced current map. In contrast\nto the determination of Diffusion lengths from one single luminescence\nimage, the method proposed here gives absolute values of the Diffusion\nlength and, in comparison, it is much less sensitive to lateral voltage\nvariations across the cell area as caused by local variations of\nthe series resistance. It is also shown that measuring the ratio\nof two luminescence images allows distinguishing shunts or surface\ndefects from bulk defects.

Peter J. Cousins - One of the best experts on this subject based on the ideXlab platform.

  • The influence of Diffusion-induced dislocations on high efficiency silicon solar cells
    IEEE Transactions on Electron Devices, 2006
    Co-Authors: Peter J. Cousins, Jeffrey E. Cotter
    Abstract:

    Heavy boron and phosphorus Diffusions are used in many high efficiency, monocrystalline silicon solar cell designs to form localized contact Diffusions and back surface fields. It is important to cell performance that these Diffusion processes do not increase bulk recombination by the introduction of lattice defects. This paper investigates the effect of boron and phosphorus misfit dislocation networks on the bulk recombination parameters, and performance of high efficiency silicon solar cells. It demonstrates that the formation of either a boron or phosphorus misfit dislocation network generates bulk asymmetric Shockley-Read-Hall recombination centers, and that these adversely affect the current-voltage curve, local ideality factor, and ultimately the performance of p-type silicon solar cells.

J. Lygeros - One of the best experts on this subject based on the ideXlab platform.

  • On the exponential stability of switching Diffusion processes
    IEEE Transactions on Automatic Control, 2005
    Co-Authors: Chenggui Yuan, J. Lygeros
    Abstract:

    In this note, we investigate almost sure exponential stability for a class of switching Diffusion processes. Lyapunov type sufficient conditions to ensure this type of stability for nonlinear switching Diffusions are derived. The conditions are an improvement over related results in the literature, since they do not rely on the moment stability of the system. These conditions are then specialized to case of linear switching Diffusion processes, to provide easily checkable sufficient criteria for exponential stabilization and robust stability.