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Wenwu Cao - One of the best experts on this subject based on the ideXlab platform.
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exceptionally high piezoelectric coefficient and low strain hysteresis in grain oriented ba ca ti zr o3 through integrating crystallographic texture and Domain Engineering
ACS Applied Materials & Interfaces, 2017Co-Authors: Yingchun Liu, Yunfei Chang, Shantao Zhang, Ruixue Wang, Fei Li, Jie Wu, Yuan Sun, Bin Yang, Wenwu CaoAbstract:Both low strain hysteresis and high piezoelectric performance are required for practical applications in precisely controlled piezoelectric devices and systems. Unfortunately, enhanced piezoelectric properties were usually obtained with the presence of a large strain hysteresis in BaTiO3 (BT)-based piezoceramics. In this work, we propose to integrate crystallographic texturing and Domain Engineering strategies into BT-based ceramics to resolve this challenge. [001]c grain-oriented (Ba0.94Ca0.06)(Ti0.95Zr0.05)O3 (BCTZ) ceramics with a texture degree as high as 98.6% were synthesized by templated grain growth. A very high piezoelectric coefficient (d33) of 755 pC/N, and an extremely large piezoelectric strain coefficient (d33* = 2027 pm/V) along with an ultralow strain hysteresis (Hs) of 4.1% were simultaneously achieved in BT-based systems for the first time, which are among the best values ever reported on both lead-free and lead-based piezoceramics. The exceptionally high piezoelectric response is mainly...
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relaxor based ferroelectric single crystals growth Domain Engineering characterization and applications
Progress in Materials Science, 2014Co-Authors: Enwei Sun, Wenwu CaoAbstract:In the past decade, Domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-x Ti x O3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from 90%. Many emerging rich physical phenomena, such as charged Domain walls, multi-phase coexistence, Domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these Domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe "PureWave". The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery, crystal growth techniques, Domain Engineering concept, and full-matrix property characterization all the way to device innovations. It outlines a truly encouraging story in materials science in the modern era. All key references are provided and 30 complete sets of material parameters for different types of relaxor-PT single crystals are listed in the Appendix. It is the intension of this review article to serve as a resource for those who are interested in basic research and practical applications of these relaxor-PT single crystals. In addition, possible mechanisms of giant piezoelectric properties in these Domain-engineered relaxor-PT systems will be discussed based on contributions from polarization rotation and charged Domain walls.
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elastic dielectric and piezoelectric constants of pb in1 2nb1 2 o3 pb mg1 3nb2 3 o3 pbtio3 single crystal poled along 011 c
Applied Physics Letters, 2010Co-Authors: Jun Luo, Shujun Zhang, Enwei Sun, Thomas R Shrout, Wenwu CaoAbstract:Ternary single crystals xPb(In1/2Nb1/2)O3–(1−x−y)Pb(Mg1/3Nb2/3)O3–yPbTiO3 (PIN-PMN-PT) poled along [011]c showed remarkable electromechanical properties. We report complete sets of elastic, dielectric, and piezoelectric constants of PIN-PMN-28%PT and PIN-PMN-32%PT, measured by using combined resonance and ultrasonic methods. The electromechanical coupling coefficients k15, k32, and k33 can reach 0.95, 0.90, and 0.92, and the piezoelectric strain coefficients d15, d32, and d33 are as high as 3354 pC/N, −1781 pC/N, and 1363 pC/N, respectively. These full matrix data sets provide the base for fundamental studies on Domain Engineering phenomena as well as urgently needed input data for the design of electromechanical devices using [011]c poled PIN-PMN-PT single crystals.
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complete set of elastic dielectric and piezoelectric coefficents of 0 93pb zn1 3nb2 3 o3 0 07pbtio3 single crystal poled along 011
Applied Physics Letters, 2006Co-Authors: Rui Zhang, Bei Jiang, Wenhua Jiang, Wenwu CaoAbstract:The authors report a complete set of elastic, dielectric, and piezoelectric coefficients of rhomboheral phase 0.93Pb(Zn1∕3Nb2∕3)O3–0.07PbTiO3 single crystal poled along [011] measured at room temperature. It was found that the electromechanical coupling coefficients k32 and k33 of this Domain engineered single crystal can reach 0.86 and 0.87, respectively, and the piezoelectric coefficients d32 and d15 are −1460 and 1823pC∕N, respectively. This complete set of data can meet the urgent need of device designers using these super piezoelectric crystals and also provide important information for fundamental studies on Domain Engineering.
Enwei Sun - One of the best experts on this subject based on the ideXlab platform.
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relaxor based ferroelectric single crystals growth Domain Engineering characterization and applications
Progress in Materials Science, 2014Co-Authors: Enwei Sun, Wenwu CaoAbstract:Abstract In the past decade, Domain engineered relaxor-PT ferroelectric single crystals, including (1 − x )Pb(Mg 1/3 Nb 2/3 )O 3 – x PbTiO 3 (PMN–PT), (1 − x )Pb(Zn 1/3 Nb 2/3 )O 3 – x PbTiO 3 (PZN–PT) and (1 − x − y )Pb(In 1/2 Nb 1/2 )O 3 – y Pb(Mg 1/3 Nb 2/3 )O 3 – x PbTiO 3 (PIN–PMN–PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr 1− x Ti x O 3 (PZT) ceramics, the piezoelectric coefficient d 33 is increased by a factor of 5 and the electromechanical coupling factor k 33 is increased from 90%. Many emerging rich physical phenomena, such as charged Domain walls, multi-phase coexistence, and Domain pattern symmetries, have posed challenging fundamental questions for scientists. The superior electromechanical properties of these Domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN–PT single crystals to the commercial production of the high-end ultrasonic imaging probe “PureWave”. The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN–PMN–PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery, crystal growth techniques, Domain Engineering concept, and full-matrix property characterization all the way to device innovations. It outlines a truly encouraging story in materials science in the modern era. All key references are provided and 30 complete sets of material parameters for different types of relaxor-PT single crystals are listed in Appendix A . It is the intension of this review article to serve as a resource for those who are interested in basic research and practical applications of these relaxor-PT single crystals. In addition, possible mechanisms of giant piezoelectric properties in these Domain-engineered relaxor-PT systems will be discussed based on contributions from polarization rotation and charged Domain walls.
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relaxor based ferroelectric single crystals growth Domain Engineering characterization and applications
Progress in Materials Science, 2014Co-Authors: Enwei Sun, Wenwu CaoAbstract:In the past decade, Domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-x Ti x O3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from 90%. Many emerging rich physical phenomena, such as charged Domain walls, multi-phase coexistence, Domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these Domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe "PureWave". The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery, crystal growth techniques, Domain Engineering concept, and full-matrix property characterization all the way to device innovations. It outlines a truly encouraging story in materials science in the modern era. All key references are provided and 30 complete sets of material parameters for different types of relaxor-PT single crystals are listed in the Appendix. It is the intension of this review article to serve as a resource for those who are interested in basic research and practical applications of these relaxor-PT single crystals. In addition, possible mechanisms of giant piezoelectric properties in these Domain-engineered relaxor-PT systems will be discussed based on contributions from polarization rotation and charged Domain walls.
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elastic dielectric and piezoelectric constants of pb in1 2nb1 2 o3 pb mg1 3nb2 3 o3 pbtio3 single crystal poled along 011 c
Applied Physics Letters, 2010Co-Authors: Jun Luo, Shujun Zhang, Enwei Sun, Thomas R Shrout, Wenwu CaoAbstract:Ternary single crystals xPb(In1/2Nb1/2)O3–(1−x−y)Pb(Mg1/3Nb2/3)O3–yPbTiO3 (PIN-PMN-PT) poled along [011]c showed remarkable electromechanical properties. We report complete sets of elastic, dielectric, and piezoelectric constants of PIN-PMN-28%PT and PIN-PMN-32%PT, measured by using combined resonance and ultrasonic methods. The electromechanical coupling coefficients k15, k32, and k33 can reach 0.95, 0.90, and 0.92, and the piezoelectric strain coefficients d15, d32, and d33 are as high as 3354 pC/N, −1781 pC/N, and 1363 pC/N, respectively. These full matrix data sets provide the base for fundamental studies on Domain Engineering phenomena as well as urgently needed input data for the design of electromechanical devices using [011]c poled PIN-PMN-PT single crystals.
S Mailis - One of the best experts on this subject based on the ideXlab platform.
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light mediated ferroelectric Domain Engineering and micro structuring of lithium niobate crystals
Laser & Photonics Reviews, 2012Co-Authors: C Y J Ying, C L Sones, R W Eason, A C Muir, C E Valdivia, H Steigerwald, E Soergel, S MailisAbstract:As the level of complexity and sophistication in modern technological applications increases, the level of material processing which is required has to follow suit. A good example that demonstrates this principle is the silicon-based microelectronics industry where further miniaturization constantly requires again and again new technological solutions. A similar route is being followed by the photonics industry with the obvious example of optical fibre communication: the demand for ever higher data transmission rates requires even more complex optical devices to process them. In this research effort several optical materials, apart from silica, have been put to the test and one of them is lithium niobate. This material is already playing an important role in today’s photonics industry and could become a suitable platform material for advanced integrated photonic applications.
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precision nanoscale Domain Engineering of lithium niobate via uv laser induced inhibition of poling
Applied Physics Letters, 2008Co-Authors: C L Sones, R W Eason, S Mailis, A C Muir, Y J Ying, T Jungk, A Hoffmann, E SoergelAbstract:Continuous wave ultraviolet (UV) laser irradiation at lambda=244 nm on the +z face of undoped and MgO doped congruent lithium niobate single crystals has been observed to inhibit ferroelectric Domain inversion. The inhibition occurs directly beneath the illuminated regions, in a depth greater than 100 nm during subsequent electric field poling of the crystal. Domain inhibition was confirmed by both differential Domain etching and piezoresponse force microscopy. This effect allows the formation of arbitrarily shaped Domains in lithium niobate and forms the basis of a high spatial resolution micro-structuring approach when followed by chemical etching.
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surface Domain Engineering in congruent lithium niobate single crystals a route to submicron periodic poling
Applied Physics Letters, 2002Co-Authors: Alessandro Busacca, C L Sones, V Apostolopoulos, R W Eason, S MailisAbstract:We describe a technique for surface Domain Engineering in congruent lithium niobate single crystals. The method is based on conventional electric-field poling, but involves an intentional overpoling step that inverts all the material apart from a thin surface region directly below the patterned photoresist. The surface poled structures show good Domain uniformity, and the technique has so far been applied to produce Domain periods as small as ∼1 μm. The technique is fully compatible with nonlinear optical integrated devices based on waveguide structures.
Wenwu Cao - One of the best experts on this subject based on the ideXlab platform.
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relaxor based ferroelectric single crystals growth Domain Engineering characterization and applications
Progress in Materials Science, 2014Co-Authors: Enwei Sun, Wenwu CaoAbstract:Abstract In the past decade, Domain engineered relaxor-PT ferroelectric single crystals, including (1 − x )Pb(Mg 1/3 Nb 2/3 )O 3 – x PbTiO 3 (PMN–PT), (1 − x )Pb(Zn 1/3 Nb 2/3 )O 3 – x PbTiO 3 (PZN–PT) and (1 − x − y )Pb(In 1/2 Nb 1/2 )O 3 – y Pb(Mg 1/3 Nb 2/3 )O 3 – x PbTiO 3 (PIN–PMN–PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr 1− x Ti x O 3 (PZT) ceramics, the piezoelectric coefficient d 33 is increased by a factor of 5 and the electromechanical coupling factor k 33 is increased from 90%. Many emerging rich physical phenomena, such as charged Domain walls, multi-phase coexistence, and Domain pattern symmetries, have posed challenging fundamental questions for scientists. The superior electromechanical properties of these Domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN–PT single crystals to the commercial production of the high-end ultrasonic imaging probe “PureWave”. The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN–PMN–PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery, crystal growth techniques, Domain Engineering concept, and full-matrix property characterization all the way to device innovations. It outlines a truly encouraging story in materials science in the modern era. All key references are provided and 30 complete sets of material parameters for different types of relaxor-PT single crystals are listed in Appendix A . It is the intension of this review article to serve as a resource for those who are interested in basic research and practical applications of these relaxor-PT single crystals. In addition, possible mechanisms of giant piezoelectric properties in these Domain-engineered relaxor-PT systems will be discussed based on contributions from polarization rotation and charged Domain walls.
Manfred Fiebig - One of the best experts on this subject based on the ideXlab platform.
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probing ferroelectric Domain Engineering in bifeo3 thin films by second harmonic generation
Advanced Materials, 2015Co-Authors: Morgan Trassin, Gabriele De Luca, Sebastian Manz, Manfred FiebigAbstract:An optical probe of ferroelectric Domain distribution and manipulation in BiFeO₃ thin films is reported using optical second harmonic generation. A unique relation between the Domain distribution and its integral symmetry is established. The ferroelectric signature is even resolved when the film is covered by a top electrode. The effect of voltage-induced ferroelectric switching is imaged.
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probing ferroelectric Domain Engineering in bifeo3 thin films by second harmonic generation
Advanced Materials, 2015Co-Authors: Morgan Trassin, Gabriele De Luca, Sebastian Manz, Manfred FiebigAbstract:An optical probe of the ferroelectric Domain distribution and manipulation in BiFeO3 thin films is reported using optical second harmonic generation. A unique relation between the Domain distribution and its integral symmetry is established. The ferroelectric signature is even resolved when the film is covered by a top electrode. The effect of voltage-induced ferroelectric switching is imaged.