The Experts below are selected from a list of 3411 Experts worldwide ranked by ideXlab platform
Shuji Nakamura - One of the best experts on this subject based on the ideXlab platform.
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high power uv ingan algan Double Heterostructure leds
Journal of Crystal Growth, 1998Co-Authors: Takashi Mukai, Daisuke Morita, Shuji NakamuraAbstract:Abstract Ultraviolet (UV) InGaN/AlGaN Double-Heterostructure (DH) light-emitting diodes (LEDs) with an external quantum efficiency of 7.5%, an output power of 5 mW and an emission wavelength of 371 nm were developed. High-power UV LEDs are obtained using an InGaN active layer with a thickness of 400 A instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based LEDs.
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high brightness ingan algan Double Heterostructure blue green light emitting diodes
Journal of Applied Physics, 1994Co-Authors: Shuji Nakamura, Takashi Mukai, Masayuki SenohAbstract:High‐brightness InGaN/AlGaN Double‐Heterostructure blue‐green‐light‐emitting diodes with a luminous intensity of 2 cd were fabricated by increasing an indium mole fraction of the InGaN active layer up to 0.23. Both Zn and Si were codoped into the InGaN active layer to afford relatively stronger luminescence. The blue‐green emission intensity of room‐temperature photoluminescence became maximum when the electron carrier concentration of the InGaN active layer was around 1×1019 cm−3. Donor‐acceptor pair recombination is a dominant emission mechanism of the InGaN active layer. The external quantum efficiency was as high as 2.4% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half‐maximum of the electroluminescence were 500 and 80 nm, respectively.
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zn doped ingan growth and ingan algan Double Heterostructure blue light emitting diodes
Journal of Crystal Growth, 1994Co-Authors: Shuji NakamuraAbstract:Abstract High-power InGaN/AlGaN Double-Heterostructure (DH) blue-light-emitting diodes (LEDs) with the output power of 1.5 mW at a forward current of 20 mA were fabricated successfully for the first time. This value of output power was the highest ever reported for blue LEDs. As an active layer, a Zn-doped InGaN layer was used for these DH LEDs. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 nm and 70 nm, respectively. The forward voltage was as low as 3.6 V at 20 mA.
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growth of inxga 1 x n compound semiconductors and high power ingan algan Double Heterostructure violet light emitting diodes
Microelectronics Journal, 1994Co-Authors: Shuji NakamuraAbstract:Abstract InxGa(1−x)N films were grown on GaN films with an indium mole fraction x up to x = 0.33 at temperatures between 720°C and 850°C. The growth rate of InGaN films had to be decreased sharply to obtain high-quality InGan films when the growth temperature was decreased. Band-gap energies between 2.67 eV and 3.40 eV obtained by room-temperature photoluminescence measurements fit quite well to parabolic forms previously obtained by Osamura et al. on the indium mole fraction x assuming that the band-gap energies for GaN and InN are 3.40 and 1.95 eV, respectively. High-power InGaN/AlGaN Double-Heterostructure violet-light-emitting diodes were fabricated. The typical output power was 1000 μW and the external quantum efficiency was as high as 1.5% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum of the electroluminescence were 380 nm and 17 nm, respectively.
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candela class high brightness ingan algan Double Heterostructure blue light emitting diodes
Applied Physics Letters, 1994Co-Authors: Shuji Nakamura, Takashi Mukai, Masayuki SenohAbstract:Candela‐class high‐brightness InGaN/AlGaN Double‐Heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs. The typical output power was 1500 μW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.
Takashi Mukai - One of the best experts on this subject based on the ideXlab platform.
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high power uv ingan algan Double Heterostructure leds
Journal of Crystal Growth, 1998Co-Authors: Takashi Mukai, Daisuke Morita, Shuji NakamuraAbstract:Abstract Ultraviolet (UV) InGaN/AlGaN Double-Heterostructure (DH) light-emitting diodes (LEDs) with an external quantum efficiency of 7.5%, an output power of 5 mW and an emission wavelength of 371 nm were developed. High-power UV LEDs are obtained using an InGaN active layer with a thickness of 400 A instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based LEDs.
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high brightness ingan algan Double Heterostructure blue green light emitting diodes
Journal of Applied Physics, 1994Co-Authors: Shuji Nakamura, Takashi Mukai, Masayuki SenohAbstract:High‐brightness InGaN/AlGaN Double‐Heterostructure blue‐green‐light‐emitting diodes with a luminous intensity of 2 cd were fabricated by increasing an indium mole fraction of the InGaN active layer up to 0.23. Both Zn and Si were codoped into the InGaN active layer to afford relatively stronger luminescence. The blue‐green emission intensity of room‐temperature photoluminescence became maximum when the electron carrier concentration of the InGaN active layer was around 1×1019 cm−3. Donor‐acceptor pair recombination is a dominant emission mechanism of the InGaN active layer. The external quantum efficiency was as high as 2.4% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half‐maximum of the electroluminescence were 500 and 80 nm, respectively.
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candela class high brightness ingan algan Double Heterostructure blue light emitting diodes
Applied Physics Letters, 1994Co-Authors: Shuji Nakamura, Takashi Mukai, Masayuki SenohAbstract:Candela‐class high‐brightness InGaN/AlGaN Double‐Heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs. The typical output power was 1500 μW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.
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high power ingan gan Double Heterostructure violet light emitting diodes
Applied Physics Letters, 1993Co-Authors: Shuji Nakamura, Masayuki Senoh, Takashi MukaiAbstract:InGaN/GaN Double‐Heterostructure light‐emitting diodes were fabricated. The output power was 90 μW and the external quantum efficiency was as high as 0.15% at a forward current of 20 mA at room temperature. The peak wavelengths of the electroluminescence(EL) varied between 411 and 420 nm with changes in the growth temperatures of an InGaN active layer between 820 and 800 °C. The full widths at half maximum of EL were between 22 and 25 nm.
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p gan n ingan n gan Double Heterostructure blue light emitting diodes
Japanese Journal of Applied Physics, 1993Co-Authors: Shuji Nakamura, Masayuki Senoh, Takashi MukaiAbstract:P-GaN/n-InGaN/n-GaN Double-Heterostructure (DH) blue-light-emitting diodes (LEDs) were fabricated successfully for the first time. The output power was 125 µW and the external quantum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs.
Masayuki Senoh - One of the best experts on this subject based on the ideXlab platform.
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high brightness ingan algan Double Heterostructure blue green light emitting diodes
Journal of Applied Physics, 1994Co-Authors: Shuji Nakamura, Takashi Mukai, Masayuki SenohAbstract:High‐brightness InGaN/AlGaN Double‐Heterostructure blue‐green‐light‐emitting diodes with a luminous intensity of 2 cd were fabricated by increasing an indium mole fraction of the InGaN active layer up to 0.23. Both Zn and Si were codoped into the InGaN active layer to afford relatively stronger luminescence. The blue‐green emission intensity of room‐temperature photoluminescence became maximum when the electron carrier concentration of the InGaN active layer was around 1×1019 cm−3. Donor‐acceptor pair recombination is a dominant emission mechanism of the InGaN active layer. The external quantum efficiency was as high as 2.4% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half‐maximum of the electroluminescence were 500 and 80 nm, respectively.
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candela class high brightness ingan algan Double Heterostructure blue light emitting diodes
Applied Physics Letters, 1994Co-Authors: Shuji Nakamura, Takashi Mukai, Masayuki SenohAbstract:Candela‐class high‐brightness InGaN/AlGaN Double‐Heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs. The typical output power was 1500 μW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.
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high power ingan gan Double Heterostructure violet light emitting diodes
Applied Physics Letters, 1993Co-Authors: Shuji Nakamura, Masayuki Senoh, Takashi MukaiAbstract:InGaN/GaN Double‐Heterostructure light‐emitting diodes were fabricated. The output power was 90 μW and the external quantum efficiency was as high as 0.15% at a forward current of 20 mA at room temperature. The peak wavelengths of the electroluminescence(EL) varied between 411 and 420 nm with changes in the growth temperatures of an InGaN active layer between 820 and 800 °C. The full widths at half maximum of EL were between 22 and 25 nm.
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p gan n ingan n gan Double Heterostructure blue light emitting diodes
Japanese Journal of Applied Physics, 1993Co-Authors: Shuji Nakamura, Masayuki Senoh, Takashi MukaiAbstract:P-GaN/n-InGaN/n-GaN Double-Heterostructure (DH) blue-light-emitting diodes (LEDs) were fabricated successfully for the first time. The output power was 125 µW and the external quantum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs.
H K Choi - One of the best experts on this subject based on the ideXlab platform.
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Double Heterostructure diode lasers emitting at 3 μm with a metastable gainassb active layer and algaassb cladding layers
Applied Physics Letters, 1994Co-Authors: H K Choi, S J Eglash, G W TurnerAbstract:Double‐Heterostructure diode lasers emitting at 3 μm have exhibited pulsed operation at temperatures up to 255 K and cw operation up to 170 K, with cw output power of 45 mW/facet at 100 K. The laser structure, grown on GaSb substrates by molecular beam epitaxy, has a metastable GaInAsSb active layer and AlGaAsSb cladding layers. The lowest pulsed threshold current density is 9 A/cm2 obtained at 40 K. The characteristic temperature is 35 K at low temperatures and 28 K above 120 K.
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inassb alassb Double Heterostructure diode lasers emitting at 4 μm
Applied Physics Letters, 1994Co-Authors: S J Eglash, H K ChoiAbstract:Double‐Heterostructure InAsSb/AlAsSb diode lasers emitting at 4 μm have been fabricated. The laser structure was grown on GaSb substrates by molecular beam epitaxy. The devices exhibit continuous wave operation at temperatures up to 80 K, and pulsed operation up to 155 K. The lowest threshold current density is 33 A/cm2 obtained at 50 K, but the characteristic temperature is only 17 K.
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High-efficiency high-power GaInAsSb-AlGaAsSb Double-Heterostructure lasers emitting at 2.3 mu m
IEEE Journal of Quantum Electronics, 1991Co-Authors: H K Choi, S J EglashAbstract:Double-Heterostructure Ga/sub 0.84/In/sub 0.16/As/sub 0.14/Sb/sub 0.86/-Al/sub 0.5/Ga/sub 0.5/As/sub 0.04/Sb/sub 0.96/ diode lasers emitting at 2.27 mu m were grown by molecular beam epitaxy on GaSb substrates. For pulsed operation of broad-stripe lasers 300 mu m wide, differential quantum efficiencies as high as 50% and output power as high as 900 mW/facet were obtained for a cavity length of 300 mu m. Values of approximately 100% for the internal quantum efficiency and 43 cm/sup -1/ for the internal loss coefficient were determined from the measured dependence of differential quantum efficiency on cavity length. The threshold current density was as low as 1.5 kA/cm/sup 2/ for a cavity length of 700 mu m.
S J Eglash - One of the best experts on this subject based on the ideXlab platform.
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Double Heterostructure diode lasers emitting at 3 μm with a metastable gainassb active layer and algaassb cladding layers
Applied Physics Letters, 1994Co-Authors: H K Choi, S J Eglash, G W TurnerAbstract:Double‐Heterostructure diode lasers emitting at 3 μm have exhibited pulsed operation at temperatures up to 255 K and cw operation up to 170 K, with cw output power of 45 mW/facet at 100 K. The laser structure, grown on GaSb substrates by molecular beam epitaxy, has a metastable GaInAsSb active layer and AlGaAsSb cladding layers. The lowest pulsed threshold current density is 9 A/cm2 obtained at 40 K. The characteristic temperature is 35 K at low temperatures and 28 K above 120 K.
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inassb alassb Double Heterostructure diode lasers emitting at 4 μm
Applied Physics Letters, 1994Co-Authors: S J Eglash, H K ChoiAbstract:Double‐Heterostructure InAsSb/AlAsSb diode lasers emitting at 4 μm have been fabricated. The laser structure was grown on GaSb substrates by molecular beam epitaxy. The devices exhibit continuous wave operation at temperatures up to 80 K, and pulsed operation up to 155 K. The lowest threshold current density is 33 A/cm2 obtained at 50 K, but the characteristic temperature is only 17 K.
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High-efficiency high-power GaInAsSb-AlGaAsSb Double-Heterostructure lasers emitting at 2.3 mu m
IEEE Journal of Quantum Electronics, 1991Co-Authors: H K Choi, S J EglashAbstract:Double-Heterostructure Ga/sub 0.84/In/sub 0.16/As/sub 0.14/Sb/sub 0.86/-Al/sub 0.5/Ga/sub 0.5/As/sub 0.04/Sb/sub 0.96/ diode lasers emitting at 2.27 mu m were grown by molecular beam epitaxy on GaSb substrates. For pulsed operation of broad-stripe lasers 300 mu m wide, differential quantum efficiencies as high as 50% and output power as high as 900 mW/facet were obtained for a cavity length of 300 mu m. Values of approximately 100% for the internal quantum efficiency and 43 cm/sup -1/ for the internal loss coefficient were determined from the measured dependence of differential quantum efficiency on cavity length. The threshold current density was as low as 1.5 kA/cm/sup 2/ for a cavity length of 700 mu m.