The Experts below are selected from a list of 63 Experts worldwide ranked by ideXlab platform

M. E. Favaro - One of the best experts on this subject based on the ideXlab platform.

  • p‐channel negative resistance field‐effect transistor
    Applied Physics Letters, 1990
    Co-Authors: M. E. Favaro, L. M. Miller, R. P. Bryan, J. J. Alwan, James J. Coleman
    Abstract:

    We experimentally demonstrate the first p‐channel negative resistance field‐effect transistor. Low‐temperature current‐voltage characteristics exhibit negative differential resistance in the Drain Circuit which is controlled by the substrate voltage. The negative differential resistance is attributed to the real‐space transfer of holes.

  • Strained layer AlGaAs-GaAs-InGaAs real-space transferred electron devices
    Electronics Letters, 1990
    Co-Authors: M. E. Favaro, L. M. Miller, R. P. Bryan, J. J. Alwan, J.j. Coleman, C.m. Wayman
    Abstract:

    Experimental results of two AlGaAs-GaAs real-space transferred electron devices, the negative resistance field-effect transistor and charge-injection transistor, which incorporates a strained layer In/sub 0.22/Ga/sub 0.78/As channel are reported. The negative differential resistance in the Drain Circuit has a Drain current peak-to-valley ratio of more than 1200 at room temperature.

Andrey Azarov - One of the best experts on this subject based on the ideXlab platform.

  • EWDTS - Energy Saving Low Cost Autodyne Short-Range Motion Sensor
    2018 IEEE East-West Design & Test Symposium (EWDTS), 2018
    Co-Authors: Elena Shirokova, Igor Shirokov, Andrey Azarov
    Abstract:

    The design and operation of an autodyne proximity sensor is considered. The autodyne system generator is constructed using a microstrip antenna as an open oscillation system of the device. At two points, the microstrip antenna is connected to the source and the source of the field-effect transistor. The central part of the microstrip antenna is connected to the common wire. The connection of the transistor and microstrip antenna is equivalent to the Hartley generator system (inductive three-point). In the Drain Circuit of the FET, the useful signal of the motion sensor is picked up. The motion sensor has a certain ease of implementation, while it allows registering moving objects at a distance of several tens of meters.

  • Energy Saving Low Cost Autodyne Short-Range Motion Sensor
    2018 IEEE East-West Design & Test Symposium (EWDTS), 2018
    Co-Authors: Elena Shirokova, Igor Shirokov, Andrey Azarov
    Abstract:

    The design and operation of an autodyne proximity sensor is considered. The autodyne system generator is constructed using a microstrip antenna as an open oscillation system of the device. At two points, the microstrip antenna is connected to the source and the source of the field-effect transistor. The central part of the microstrip antenna is connected to the common wire. The connection of the transistor and microstrip antenna is equivalent to the Hartley generator system (inductive three-point). In the Drain Circuit of the FET, the useful signal of the motion sensor is picked up. The motion sensor has a certain ease of implementation, while it allows registering moving objects at a distance of several tens of meters.

James J. Coleman - One of the best experts on this subject based on the ideXlab platform.

  • p‐channel negative resistance field‐effect transistor
    Applied Physics Letters, 1990
    Co-Authors: M. E. Favaro, L. M. Miller, R. P. Bryan, J. J. Alwan, James J. Coleman
    Abstract:

    We experimentally demonstrate the first p‐channel negative resistance field‐effect transistor. Low‐temperature current‐voltage characteristics exhibit negative differential resistance in the Drain Circuit which is controlled by the substrate voltage. The negative differential resistance is attributed to the real‐space transfer of holes.

L. M. Miller - One of the best experts on this subject based on the ideXlab platform.

  • p‐channel negative resistance field‐effect transistor
    Applied Physics Letters, 1990
    Co-Authors: M. E. Favaro, L. M. Miller, R. P. Bryan, J. J. Alwan, James J. Coleman
    Abstract:

    We experimentally demonstrate the first p‐channel negative resistance field‐effect transistor. Low‐temperature current‐voltage characteristics exhibit negative differential resistance in the Drain Circuit which is controlled by the substrate voltage. The negative differential resistance is attributed to the real‐space transfer of holes.

  • Strained layer AlGaAs-GaAs-InGaAs real-space transferred electron devices
    Electronics Letters, 1990
    Co-Authors: M. E. Favaro, L. M. Miller, R. P. Bryan, J. J. Alwan, J.j. Coleman, C.m. Wayman
    Abstract:

    Experimental results of two AlGaAs-GaAs real-space transferred electron devices, the negative resistance field-effect transistor and charge-injection transistor, which incorporates a strained layer In/sub 0.22/Ga/sub 0.78/As channel are reported. The negative differential resistance in the Drain Circuit has a Drain current peak-to-valley ratio of more than 1200 at room temperature.

R. P. Bryan - One of the best experts on this subject based on the ideXlab platform.

  • p‐channel negative resistance field‐effect transistor
    Applied Physics Letters, 1990
    Co-Authors: M. E. Favaro, L. M. Miller, R. P. Bryan, J. J. Alwan, James J. Coleman
    Abstract:

    We experimentally demonstrate the first p‐channel negative resistance field‐effect transistor. Low‐temperature current‐voltage characteristics exhibit negative differential resistance in the Drain Circuit which is controlled by the substrate voltage. The negative differential resistance is attributed to the real‐space transfer of holes.

  • Strained layer AlGaAs-GaAs-InGaAs real-space transferred electron devices
    Electronics Letters, 1990
    Co-Authors: M. E. Favaro, L. M. Miller, R. P. Bryan, J. J. Alwan, J.j. Coleman, C.m. Wayman
    Abstract:

    Experimental results of two AlGaAs-GaAs real-space transferred electron devices, the negative resistance field-effect transistor and charge-injection transistor, which incorporates a strained layer In/sub 0.22/Ga/sub 0.78/As channel are reported. The negative differential resistance in the Drain Circuit has a Drain current peak-to-valley ratio of more than 1200 at room temperature.