The Experts below are selected from a list of 294 Experts worldwide ranked by ideXlab platform
Farid Medjdoub - One of the best experts on this subject based on the ideXlab platform.
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Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate–Drain access region Spacing ( $L_{\mathrm {GD}})$ effect on electrical and noise performance of InAlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different $L_{\mathrm {GD}}$ of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate–Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for $L_{\mathrm {GD}} . Finally, the calculated Hooge parameter ( $\alpha _{H})$ is equal to $3.1\times 10^{-4}$ . It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications.
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impact of gate Drain Spacing on low frequency noise performance of in situ sin passivated inalgan gan mis hemts
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate–Drain access region Spacing ( $L_{\mathrm {GD}})$ effect on electrical and noise performance of InAlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different $L_{\mathrm {GD}}$ of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate–Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for $L_{\mathrm {GD}} . Finally, the calculated Hooge parameter ( $\alpha _{H})$ is equal to $3.1\times 10^{-4}$ . It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications.
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Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate-Drain access region Spacing (LGD) effect on electrical and noise performance of InAlGaN/GaN metal- insulator-semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different LGD of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate-Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for LGD
Mehdi Rzin - One of the best experts on this subject based on the ideXlab platform.
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Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate–Drain access region Spacing ( $L_{\mathrm {GD}})$ effect on electrical and noise performance of InAlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different $L_{\mathrm {GD}}$ of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate–Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for $L_{\mathrm {GD}} . Finally, the calculated Hooge parameter ( $\alpha _{H})$ is equal to $3.1\times 10^{-4}$ . It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications.
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impact of gate Drain Spacing on low frequency noise performance of in situ sin passivated inalgan gan mis hemts
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate–Drain access region Spacing ( $L_{\mathrm {GD}})$ effect on electrical and noise performance of InAlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different $L_{\mathrm {GD}}$ of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate–Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for $L_{\mathrm {GD}} . Finally, the calculated Hooge parameter ( $\alpha _{H})$ is equal to $3.1\times 10^{-4}$ . It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications.
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Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate-Drain access region Spacing (LGD) effect on electrical and noise performance of InAlGaN/GaN metal- insulator-semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different LGD of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate-Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for LGD
Cédric Lacam - One of the best experts on this subject based on the ideXlab platform.
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Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate–Drain access region Spacing ( $L_{\mathrm {GD}})$ effect on electrical and noise performance of InAlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different $L_{\mathrm {GD}}$ of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate–Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for $L_{\mathrm {GD}} . Finally, the calculated Hooge parameter ( $\alpha _{H})$ is equal to $3.1\times 10^{-4}$ . It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications.
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impact of gate Drain Spacing on low frequency noise performance of in situ sin passivated inalgan gan mis hemts
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate–Drain access region Spacing ( $L_{\mathrm {GD}})$ effect on electrical and noise performance of InAlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different $L_{\mathrm {GD}}$ of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate–Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for $L_{\mathrm {GD}} . Finally, the calculated Hooge parameter ( $\alpha _{H})$ is equal to $3.1\times 10^{-4}$ . It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications.
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Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate-Drain access region Spacing (LGD) effect on electrical and noise performance of InAlGaN/GaN metal- insulator-semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different LGD of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate-Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for LGD
Jean-marc Routoure - One of the best experts on this subject based on the ideXlab platform.
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Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate–Drain access region Spacing ( $L_{\mathrm {GD}})$ effect on electrical and noise performance of InAlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different $L_{\mathrm {GD}}$ of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate–Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for $L_{\mathrm {GD}} . Finally, the calculated Hooge parameter ( $\alpha _{H})$ is equal to $3.1\times 10^{-4}$ . It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications.
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impact of gate Drain Spacing on low frequency noise performance of in situ sin passivated inalgan gan mis hemts
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate–Drain access region Spacing ( $L_{\mathrm {GD}})$ effect on electrical and noise performance of InAlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different $L_{\mathrm {GD}}$ of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate–Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for $L_{\mathrm {GD}} . Finally, the calculated Hooge parameter ( $\alpha _{H})$ is equal to $3.1\times 10^{-4}$ . It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications.
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Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate-Drain access region Spacing (LGD) effect on electrical and noise performance of InAlGaN/GaN metal- insulator-semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different LGD of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate-Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for LGD
Bruno Guillet - One of the best experts on this subject based on the ideXlab platform.
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Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate–Drain access region Spacing ( $L_{\mathrm {GD}})$ effect on electrical and noise performance of InAlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different $L_{\mathrm {GD}}$ of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate–Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for $L_{\mathrm {GD}} . Finally, the calculated Hooge parameter ( $\alpha _{H})$ is equal to $3.1\times 10^{-4}$ . It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications.
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impact of gate Drain Spacing on low frequency noise performance of in situ sin passivated inalgan gan mis hemts
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate–Drain access region Spacing ( $L_{\mathrm {GD}})$ effect on electrical and noise performance of InAlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different $L_{\mathrm {GD}}$ of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate–Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for $L_{\mathrm {GD}} . Finally, the calculated Hooge parameter ( $\alpha _{H})$ is equal to $3.1\times 10^{-4}$ . It reflects the high material quality while using sub-10 nm InAlGaN layer, which is promising for high-frequency applications.
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Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
IEEE Transactions on Electron Devices, 2017Co-Authors: Mehdi Rzin, Jean-marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid MedjdoubAbstract:In this paper we investigated the gate-Drain access region Spacing (LGD) effect on electrical and noise performance of InAlGaN/GaN metal- insulator-semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different LGD of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have been carried out for the first time in order to analyze the impact of the gate-Drain Spacing on the electrical characteristics. The noise of the channel under the gate has been identified as the dominant channel noise source for LGD
