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Koji Kita - One of the best experts on this subject based on the ideXlab platform.
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significant reduction of interface trap density of sic pmosfets by post Oxidation h2o annealing processes with different oxygen partial pressures
Japanese Journal of Applied Physics, 2020Co-Authors: Jun Koyanagi, Mizuki Nishida, Koji KitaAbstract:We investigated the effects of the post-Oxidation annealing in H2O (wet-POA) with various conditions after Dry Oxidation for p-type 4H-SiC (0001) metal-oxide-semiconductor (MOS) capacitors and 4H-SiC (0001) p-channel MOS field effect transistors (PMOSFETs). Interface state density, fixed charge density, and slow trap density in near-interface oxide were reduced by the wet-POA with additional growth of only < 1 nm oxide at the interface. With those POAs the improved PMOSFET performance was also demonstrated. The degradation of flatband voltage (VFB) stability, which has been regarded as one of the serious drawbacks of wet Oxidation of SiC, was efficiently suppressed by a careful selection of the wet-POA conditions with low O2 partial pressure at high temperature. Even though the reason why the VFB stability is so sensitive to the wet-POA condition is not clarified yet, these results give us a guideline to design an appropriate conditions of wet-POA for SiC PMOSFETs.
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low temperature wet o2 annealing process for enhancement of inversion channel mobility and suppression of vfb instability on 4h sic 0001 si face
Applied Physics Letters, 2018Co-Authors: Hirohisa Hirai, Koji KitaAbstract:For improvement of 4H-SiC metal-oxide-semiconductor field-effect-transistor performance, a post-Oxidation annealing (POA) process in a wet environment after Dry Oxidation was systematically investigated. By tuning the wet-POA conditions, we clarified that wet-POA at low temperatures is more advantageous for both the enhancement of channel mobility and the suppression of flatband voltage instability. One of the mechanisms of channel mobility enhancement is attributed to the decrease in the density of traps in oxide near the MOS interface, rather than conventional interface traps. The effects of the wet environment on interfacial properties were also discussed based on oxide growth kinetics on 4H-SiC.
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low temperature wet o2 annealing process for enhancement of inversion channel mobility and suppression of vfb instability on 4h sic 0001 si face
Applied Physics Letters, 2018Co-Authors: Hirohisa Hirai, Koji KitaAbstract:For improvement of 4H-SiC metal-oxide-semiconductor field-effect-transistor performance, a post-Oxidation annealing (POA) process in a wet environment after Dry Oxidation was systematically investigated. By tuning the wet-POA conditions, we clarified that wet-POA at low temperatures is more advantageous for both the enhancement of channel mobility and the suppression of flatband voltage instability. One of the mechanisms of channel mobility enhancement is attributed to the decrease in the density of traps in oxide near the MOS interface, rather than conventional interface traps. The effects of the wet environment on interfacial properties were also discussed based on oxide growth kinetics on 4H-SiC.For improvement of 4H-SiC metal-oxide-semiconductor field-effect-transistor performance, a post-Oxidation annealing (POA) process in a wet environment after Dry Oxidation was systematically investigated. By tuning the wet-POA conditions, we clarified that wet-POA at low temperatures is more advantageous for both the enhancement of channel mobility and the suppression of flatband voltage instability. One of the mechanisms of channel mobility enhancement is attributed to the decrease in the density of traps in oxide near the MOS interface, rather than conventional interface traps. The effects of the wet environment on interfacial properties were also discussed based on oxide growth kinetics on 4H-SiC.
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thermal Oxidation induced local lattice distortion at surface of 4h sic 0001 characterized by in plane x ray diffractometry
Applied Physics Express, 2018Co-Authors: Adhi Dwi Hatmanto, Koji KitaAbstract:Local lattice distortions at the surface of 4H-SiC(0001) after various thermal Oxidation processes were investigated by in-plane X-ray diffractometry. Our results showed that Dry Oxidation induced lattice distortion, observed as the increase of interplanar spacing, became higher with increasing Oxidation time. Lattice constant changes of up to ~0.4% were observed by increasing the oxide thickness to 44 nm. This lattice distortion was not recovered after removal of the SiO2 layer by chemical etching, although it was partially reduced by Ar gas annealing, suggesting that strain relaxation requires removal of Oxidation-induced defects in the 4H-SiC surface region.
Shinsuke Harada - One of the best experts on this subject based on the ideXlab platform.
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interface carbon defects at 4h sic 0001 sio2 interfaces studied by electron spin resonance spectroscopy
Applied Physics Letters, 2018Co-Authors: T Umeda, Geonwoo Kim, Takafumi Okuda, Mitsuru Sometani, T Kimoto, Shinsuke HaradaAbstract:We study an electron-spin-resonance (ESR) signal of carbon dangling-bond defects at 4H-SiC(0001)/SiO2 interfaces, which we call an “interface carbon defect.” The ESR signal is close to a c-axial type of the PbC centers (interfacial carbon dangling bonds) that have originally been found in porous-SiC/SiO2 interfaces. The interface carbon defects were always formed with an areal density of 3–4 × 1012 cm−2 after the standard Dry Oxidation of 4H-SiC(0001) surfaces. They act as electron traps and decrease the amount of free electrons in the channel region, consequently reducing the field-effect mobility of Si-face 4H-SiC MOSFETs. They were eliminated by optimum post-Oxidation anneals (POAs) in either NO or POCl3 environment. Furthermore, POCl3 POAs at 1000 °C introduced a high density (1.7 × 1012 cm−2) of phosphorus donors into the channel region, increasing the free-carrier density as compared with the case of NO POAs.
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Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy
American Institute of Physics, 2018Co-Authors: 梅田 享英, T Umeda, Takafumi Okuda, Mitsuru Sometani, T Kimoto, G.-w. Kim, Shinsuke HaradaAbstract:We study an electron-spin-resonance (ESR) signal of carbon dangling-bond defects at 4H-SiC(0001)/SiO2 interfaces, which we call an “interface carbon defect.” The ESR signal is close to a c-axial type of the PbC centers (interfacial carbon dangling bonds) that have originally been found in porous-SiC/SiO2 interfaces. The interface carbon defects were always formed with an areal density of 3–4 × 1012 cm−2 after the standard Dry Oxidation of 4H-SiC(0001) surfaces. They act as electron traps and decrease the amount of free electrons in the channel region, consequently reducing the field-effect mobility of Si-face 4H-SiC MOSFETs. They were eliminated by optimum post-Oxidation anneals (POAs) in either NO or POCl3 environment. Furthermore, POCl3 POAs at 1000 °C introduced a high density (1.7 × 1012 cm−2) of phosphorus donors into the channel region, increasing the free-carrier density as compared with the case of NO POAs.This work was supported by the Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), and “Next-generation power electronics” (funding agency: NEDO). This work was also partly supported by a Grant-in-Aid (Grant No. 17H02781) from the Ministry of Education, Culture, Sports, Science and Technology of Japan
T Umeda - One of the best experts on this subject based on the ideXlab platform.
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interface carbon defects at 4h sic 0001 sio2 interfaces studied by electron spin resonance spectroscopy
Applied Physics Letters, 2018Co-Authors: T Umeda, Geonwoo Kim, Takafumi Okuda, Mitsuru Sometani, T Kimoto, Shinsuke HaradaAbstract:We study an electron-spin-resonance (ESR) signal of carbon dangling-bond defects at 4H-SiC(0001)/SiO2 interfaces, which we call an “interface carbon defect.” The ESR signal is close to a c-axial type of the PbC centers (interfacial carbon dangling bonds) that have originally been found in porous-SiC/SiO2 interfaces. The interface carbon defects were always formed with an areal density of 3–4 × 1012 cm−2 after the standard Dry Oxidation of 4H-SiC(0001) surfaces. They act as electron traps and decrease the amount of free electrons in the channel region, consequently reducing the field-effect mobility of Si-face 4H-SiC MOSFETs. They were eliminated by optimum post-Oxidation anneals (POAs) in either NO or POCl3 environment. Furthermore, POCl3 POAs at 1000 °C introduced a high density (1.7 × 1012 cm−2) of phosphorus donors into the channel region, increasing the free-carrier density as compared with the case of NO POAs.
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Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy
American Institute of Physics, 2018Co-Authors: 梅田 享英, T Umeda, Takafumi Okuda, Mitsuru Sometani, T Kimoto, G.-w. Kim, Shinsuke HaradaAbstract:We study an electron-spin-resonance (ESR) signal of carbon dangling-bond defects at 4H-SiC(0001)/SiO2 interfaces, which we call an “interface carbon defect.” The ESR signal is close to a c-axial type of the PbC centers (interfacial carbon dangling bonds) that have originally been found in porous-SiC/SiO2 interfaces. The interface carbon defects were always formed with an areal density of 3–4 × 1012 cm−2 after the standard Dry Oxidation of 4H-SiC(0001) surfaces. They act as electron traps and decrease the amount of free electrons in the channel region, consequently reducing the field-effect mobility of Si-face 4H-SiC MOSFETs. They were eliminated by optimum post-Oxidation anneals (POAs) in either NO or POCl3 environment. Furthermore, POCl3 POAs at 1000 °C introduced a high density (1.7 × 1012 cm−2) of phosphorus donors into the channel region, increasing the free-carrier density as compared with the case of NO POAs.This work was supported by the Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), and “Next-generation power electronics” (funding agency: NEDO). This work was also partly supported by a Grant-in-Aid (Grant No. 17H02781) from the Ministry of Education, Culture, Sports, Science and Technology of Japan
T Kimoto - One of the best experts on this subject based on the ideXlab platform.
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interface carbon defects at 4h sic 0001 sio2 interfaces studied by electron spin resonance spectroscopy
Applied Physics Letters, 2018Co-Authors: T Umeda, Geonwoo Kim, Takafumi Okuda, Mitsuru Sometani, T Kimoto, Shinsuke HaradaAbstract:We study an electron-spin-resonance (ESR) signal of carbon dangling-bond defects at 4H-SiC(0001)/SiO2 interfaces, which we call an “interface carbon defect.” The ESR signal is close to a c-axial type of the PbC centers (interfacial carbon dangling bonds) that have originally been found in porous-SiC/SiO2 interfaces. The interface carbon defects were always formed with an areal density of 3–4 × 1012 cm−2 after the standard Dry Oxidation of 4H-SiC(0001) surfaces. They act as electron traps and decrease the amount of free electrons in the channel region, consequently reducing the field-effect mobility of Si-face 4H-SiC MOSFETs. They were eliminated by optimum post-Oxidation anneals (POAs) in either NO or POCl3 environment. Furthermore, POCl3 POAs at 1000 °C introduced a high density (1.7 × 1012 cm−2) of phosphorus donors into the channel region, increasing the free-carrier density as compared with the case of NO POAs.
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Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy
American Institute of Physics, 2018Co-Authors: 梅田 享英, T Umeda, Takafumi Okuda, Mitsuru Sometani, T Kimoto, G.-w. Kim, Shinsuke HaradaAbstract:We study an electron-spin-resonance (ESR) signal of carbon dangling-bond defects at 4H-SiC(0001)/SiO2 interfaces, which we call an “interface carbon defect.” The ESR signal is close to a c-axial type of the PbC centers (interfacial carbon dangling bonds) that have originally been found in porous-SiC/SiO2 interfaces. The interface carbon defects were always formed with an areal density of 3–4 × 1012 cm−2 after the standard Dry Oxidation of 4H-SiC(0001) surfaces. They act as electron traps and decrease the amount of free electrons in the channel region, consequently reducing the field-effect mobility of Si-face 4H-SiC MOSFETs. They were eliminated by optimum post-Oxidation anneals (POAs) in either NO or POCl3 environment. Furthermore, POCl3 POAs at 1000 °C introduced a high density (1.7 × 1012 cm−2) of phosphorus donors into the channel region, increasing the free-carrier density as compared with the case of NO POAs.This work was supported by the Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), and “Next-generation power electronics” (funding agency: NEDO). This work was also partly supported by a Grant-in-Aid (Grant No. 17H02781) from the Ministry of Education, Culture, Sports, Science and Technology of Japan
Mitsuru Sometani - One of the best experts on this subject based on the ideXlab platform.
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interface carbon defects at 4h sic 0001 sio2 interfaces studied by electron spin resonance spectroscopy
Applied Physics Letters, 2018Co-Authors: T Umeda, Geonwoo Kim, Takafumi Okuda, Mitsuru Sometani, T Kimoto, Shinsuke HaradaAbstract:We study an electron-spin-resonance (ESR) signal of carbon dangling-bond defects at 4H-SiC(0001)/SiO2 interfaces, which we call an “interface carbon defect.” The ESR signal is close to a c-axial type of the PbC centers (interfacial carbon dangling bonds) that have originally been found in porous-SiC/SiO2 interfaces. The interface carbon defects were always formed with an areal density of 3–4 × 1012 cm−2 after the standard Dry Oxidation of 4H-SiC(0001) surfaces. They act as electron traps and decrease the amount of free electrons in the channel region, consequently reducing the field-effect mobility of Si-face 4H-SiC MOSFETs. They were eliminated by optimum post-Oxidation anneals (POAs) in either NO or POCl3 environment. Furthermore, POCl3 POAs at 1000 °C introduced a high density (1.7 × 1012 cm−2) of phosphorus donors into the channel region, increasing the free-carrier density as compared with the case of NO POAs.
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Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy
American Institute of Physics, 2018Co-Authors: 梅田 享英, T Umeda, Takafumi Okuda, Mitsuru Sometani, T Kimoto, G.-w. Kim, Shinsuke HaradaAbstract:We study an electron-spin-resonance (ESR) signal of carbon dangling-bond defects at 4H-SiC(0001)/SiO2 interfaces, which we call an “interface carbon defect.” The ESR signal is close to a c-axial type of the PbC centers (interfacial carbon dangling bonds) that have originally been found in porous-SiC/SiO2 interfaces. The interface carbon defects were always formed with an areal density of 3–4 × 1012 cm−2 after the standard Dry Oxidation of 4H-SiC(0001) surfaces. They act as electron traps and decrease the amount of free electrons in the channel region, consequently reducing the field-effect mobility of Si-face 4H-SiC MOSFETs. They were eliminated by optimum post-Oxidation anneals (POAs) in either NO or POCl3 environment. Furthermore, POCl3 POAs at 1000 °C introduced a high density (1.7 × 1012 cm−2) of phosphorus donors into the channel region, increasing the free-carrier density as compared with the case of NO POAs.This work was supported by the Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), and “Next-generation power electronics” (funding agency: NEDO). This work was also partly supported by a Grant-in-Aid (Grant No. 17H02781) from the Ministry of Education, Culture, Sports, Science and Technology of Japan
