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G Wachutka - One of the best experts on this subject based on the ideXlab platform.

  • Predictive physical model of cosmic-radiation-induced failures of power Devices
    2012 15th International Power Electronics and Motion Control Conference (EPE PEMC), 2012
    Co-Authors: C. Weiß, G Wachutka, A. Härtl, F. Hille, F. Pfirsch
    Abstract:

    In the last ten years, the hardening of silicon high power Devices against cosmic-radiation-induced failure gained decisive importance. A systematic improvement of the robustness against cosmic radiation requires a fundamental physical understanding of the microscopic mechanisms which lead to the failure or even destruction of power Devices. We performed detailed 3D thermo-Electrical Device simulations to study the local self-heating in the Device in order to explain the failure and destruction mechanisms and compared the results with experimental data obtained from nucleon irradiation experiments. Several diode designs with varying doping concentration and vertical size of the Device were investigated.

  • a comparison of electron proton and helium ion irradiation for the optimization of the coolmos spl trade body diode
    International Symposium on Power Semiconductor Devices and IC's, 2002
    Co-Authors: Markus Schmitt, Hans Joachim Schulze, Andreas Schlogl, A Vosseburger, Armin Willmeroth, Gerald Deboy, G Wachutka
    Abstract:

    With a view to improving the switching speed of the internal diode, we exposed CoolMOS/spl trade/ power MOSFETs as prominent representatives of the new class of charge compensation Devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the Electrical Device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q/sub rr/ can be reduced by a factor of 10 compared to reference Devices without any significant change of the remaining Electrical data of the Device.

  • A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS/spl trade/ body diode
    Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics, 2002
    Co-Authors: Markus Schmitt, Hans Joachim Schulze, Andreas Schlogl, A Vosseburger, Armin Willmeroth, Gerald Deboy, G Wachutka
    Abstract:

    With a view to improving the switching speed of the internal diode, we exposed CoolMOS/spl trade/ power MOSFETs as prominent representatives of the new class of charge compensation Devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the Electrical Device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q/sub rr/ can be reduced by a factor of 10 compared to reference Devices without any significant change of the remaining Electrical data of the Device.

Markus Schmitt - One of the best experts on this subject based on the ideXlab platform.

  • a comparison of electron proton and helium ion irradiation for the optimization of the coolmos spl trade body diode
    International Symposium on Power Semiconductor Devices and IC's, 2002
    Co-Authors: Markus Schmitt, Hans Joachim Schulze, Andreas Schlogl, A Vosseburger, Armin Willmeroth, Gerald Deboy, G Wachutka
    Abstract:

    With a view to improving the switching speed of the internal diode, we exposed CoolMOS/spl trade/ power MOSFETs as prominent representatives of the new class of charge compensation Devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the Electrical Device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q/sub rr/ can be reduced by a factor of 10 compared to reference Devices without any significant change of the remaining Electrical data of the Device.

  • A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS/spl trade/ body diode
    Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics, 2002
    Co-Authors: Markus Schmitt, Hans Joachim Schulze, Andreas Schlogl, A Vosseburger, Armin Willmeroth, Gerald Deboy, G Wachutka
    Abstract:

    With a view to improving the switching speed of the internal diode, we exposed CoolMOS/spl trade/ power MOSFETs as prominent representatives of the new class of charge compensation Devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the Electrical Device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q/sub rr/ can be reduced by a factor of 10 compared to reference Devices without any significant change of the remaining Electrical data of the Device.

A Vosseburger - One of the best experts on this subject based on the ideXlab platform.

  • a comparison of electron proton and helium ion irradiation for the optimization of the coolmos spl trade body diode
    International Symposium on Power Semiconductor Devices and IC's, 2002
    Co-Authors: Markus Schmitt, Hans Joachim Schulze, Andreas Schlogl, A Vosseburger, Armin Willmeroth, Gerald Deboy, G Wachutka
    Abstract:

    With a view to improving the switching speed of the internal diode, we exposed CoolMOS/spl trade/ power MOSFETs as prominent representatives of the new class of charge compensation Devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the Electrical Device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q/sub rr/ can be reduced by a factor of 10 compared to reference Devices without any significant change of the remaining Electrical data of the Device.

  • A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS/spl trade/ body diode
    Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics, 2002
    Co-Authors: Markus Schmitt, Hans Joachim Schulze, Andreas Schlogl, A Vosseburger, Armin Willmeroth, Gerald Deboy, G Wachutka
    Abstract:

    With a view to improving the switching speed of the internal diode, we exposed CoolMOS/spl trade/ power MOSFETs as prominent representatives of the new class of charge compensation Devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the Electrical Device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q/sub rr/ can be reduced by a factor of 10 compared to reference Devices without any significant change of the remaining Electrical data of the Device.

Gerald Deboy - One of the best experts on this subject based on the ideXlab platform.

  • a comparison of electron proton and helium ion irradiation for the optimization of the coolmos spl trade body diode
    International Symposium on Power Semiconductor Devices and IC's, 2002
    Co-Authors: Markus Schmitt, Hans Joachim Schulze, Andreas Schlogl, A Vosseburger, Armin Willmeroth, Gerald Deboy, G Wachutka
    Abstract:

    With a view to improving the switching speed of the internal diode, we exposed CoolMOS/spl trade/ power MOSFETs as prominent representatives of the new class of charge compensation Devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the Electrical Device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q/sub rr/ can be reduced by a factor of 10 compared to reference Devices without any significant change of the remaining Electrical data of the Device.

  • A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS/spl trade/ body diode
    Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics, 2002
    Co-Authors: Markus Schmitt, Hans Joachim Schulze, Andreas Schlogl, A Vosseburger, Armin Willmeroth, Gerald Deboy, G Wachutka
    Abstract:

    With a view to improving the switching speed of the internal diode, we exposed CoolMOS/spl trade/ power MOSFETs as prominent representatives of the new class of charge compensation Devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the Electrical Device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q/sub rr/ can be reduced by a factor of 10 compared to reference Devices without any significant change of the remaining Electrical data of the Device.

Armin Willmeroth - One of the best experts on this subject based on the ideXlab platform.

  • a comparison of electron proton and helium ion irradiation for the optimization of the coolmos spl trade body diode
    International Symposium on Power Semiconductor Devices and IC's, 2002
    Co-Authors: Markus Schmitt, Hans Joachim Schulze, Andreas Schlogl, A Vosseburger, Armin Willmeroth, Gerald Deboy, G Wachutka
    Abstract:

    With a view to improving the switching speed of the internal diode, we exposed CoolMOS/spl trade/ power MOSFETs as prominent representatives of the new class of charge compensation Devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the Electrical Device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q/sub rr/ can be reduced by a factor of 10 compared to reference Devices without any significant change of the remaining Electrical data of the Device.

  • A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS/spl trade/ body diode
    Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics, 2002
    Co-Authors: Markus Schmitt, Hans Joachim Schulze, Andreas Schlogl, A Vosseburger, Armin Willmeroth, Gerald Deboy, G Wachutka
    Abstract:

    With a view to improving the switching speed of the internal diode, we exposed CoolMOS/spl trade/ power MOSFETs as prominent representatives of the new class of charge compensation Devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the Electrical Device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q/sub rr/ can be reduced by a factor of 10 compared to reference Devices without any significant change of the remaining Electrical data of the Device.