The Experts below are selected from a list of 270 Experts worldwide ranked by ideXlab platform
M K Smit - One of the best experts on this subject based on the ideXlab platform.
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monolithic awg based discretely tunable laser diode with nanosecond Switching Speed
IEEE Photonics Technology Letters, 2009Co-Authors: Martijn J R Heck, A La Porta, X J M Leijtens, L Luc M Augustin, T De Vries, Barry Smalbrugge, R Notzel, Roberto Gaudino, D J Robbins, M K SmitAbstract:A novel concept for an arrayed-waveguide-grating (AWG)-based fast tunable laser is presented. It is fabricated in the InP-InGaAsP monolithic integration technology. Laser peaks have a sidemode suppression ratio of 30-40 dB. The wavelength Switching Speed is in the order of a few nanoseconds and Switching is achieved by a 1-mA bias current. The Switching between AWG channels is discrete and no laser operation takes place at wavelengths corresponding to other channels during the tuning process.
Olivier Vendier - One of the best experts on this subject based on the ideXlab platform.
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Sub-hundred nanosecond electrostatic actuated RF MEMS switched capacitors
Journal of Micromechanics and Microengineering, 2017Co-Authors: Aurélie Verger, Jérémie Dhennin, Adrien Broué, Cyril Guines, Aurelian Crunteanu, Frederic Courtade, Arnaud Pothier, Jean-christophe Orlianges, Pierre Blondy, Olivier VendierAbstract:This paper presents a new mechanical architecture for RF MEMS components that are able to achieve reconfiguration faster than conventional MEMS switches. For most MEMS switches, the electrical Switching Speed is generally limited to a few microseconds, inherently restricted by the delay required to mechanically move their mobile membrane up and down. By using a proper mechanical design and the structural material fabrication process, this paper will show miniature bridges that are able to exhibit mechanical resonance frequencies over 10 MHz range to be compared to the few tens of kHz for conventional RF MEMS switches. As a result, the Switching Speed of these miniature components is greatly improved and reaches 50 to 100 ns. Such performance has been achieved using composite micro-beams based on the multilayer material assembly of alumina/aluminum/alumina. To our knowledge, this is the fastest Switching Speed reported for RF MEMS components so far.
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Nanogap MEMS micro-relay with 70 ns Switching Speed
2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), 2012Co-Authors: Aurélie Verger, Cyril Guines, Olivier Vendier, Arnaud Pothier, Pierre Blondy, Frederic CourtadeAbstract:This paper presents Micro-electro-mechanical relays for very fast Switching applications. Prototype relays have been fabricated tested and demonstrated reconfiguration capabilities as fast as 70 ns with a 300 ns additional settling time once electrical contact is fully stabilized. Such Switching Speed has been previously demonstrated on capacitive RF-MEMS switches, but this is the first time that such a fast mechanical Switching is reported on relays, i.e. ohmic contact switches. The ability to open or close a contact at such Speed can lead to many applications such as ultra low power electromechanical computing, or harsh environment electronics.
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Nanogap MEMS micro-replay with 70 ns Switching Speed
Micro Electro Mechanical Systems (MEMS) 2012 IEEE 25th International Conference on, 2012Co-Authors: Aurélie Verger, Cyril Guines, Aurelian Crunteanu, Frederic Courtade, Arnaud Pothier, Jean-christophe Orlianges, Pierre Blondy, J. Dehnnin, Olivier VendierAbstract:Email Print Request Permissions Save to Project This paper presents Micro-electro-mechanical relays for very fast Switching applications. Prototype relays have been fabricated tested and demonstrated reconfiguration capabilities as fast as 70 ns with a 300 ns additional settling time once electrical contact is fully stabilized. Such Switching Speed has been previously demonstrated on capacitive RF-MEMS switches, but this is the first time that such a fast mechanical Switching is reported on relays, i.e. ohmic contact switches. The ability to open or close a contact at such Speed can lead to many applications such as ultra low power electromechanical computing, or harsh environment electronics.
Leon M Tolbert - One of the best experts on this subject based on the ideXlab platform.
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temperature dependent characterization modeling and Switching Speed limitation analysis of third generation 10 kv sic mosfet
IEEE Transactions on Power Electronics, 2018Co-Authors: Shiqi Ji, Sheng Zheng, Fei Wang, Leon M TolbertAbstract:The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and Switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. A double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during Switching transients. The Switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 ˚C and compared with previous 10-kV MOSFETs. A simple behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The Switching Speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.
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analysis of the Switching Speed limitation of wide band gap devices in a phase leg configuration
European Conference on Cognitive Ergonomics, 2012Co-Authors: Zheyu Zhang, Weimin Zhang, Fred Wang, Leon M Tolbert, Benjamin J BlalockAbstract:Advanced power semiconductor devices, especially wide band-gap devices, have inherent capability for fast Switching. However, due to the limitation of gate driver capability and the interaction between two devices in a phase-leg during Switching transient (cross talk), the Switching Speed is slower than expected in practical use. This paper focuses on identifying the key limiting factors for Switching Speed. The results provide the basis for improving gate drivers, eliminating interference, and boosting Switching Speed. Based on the EPC2001 Gallium Nitride transistor, both simulation and experimental results verify that the limiting factors in the gate loop include the pull-up (-down) resistance of gate driver, rise (fall) time and amplitude of gate driver output voltage; among these the rise (fall) time plays the primary role. Another important limiting factor of device Switching Speed is the spurious gate voltage induced by cross talk between two switches in a phase-leg. This induced gate voltage is not only determined by the switch Speed, but also depends on the gate loop impedance, junction capacitance, and operating conditions of the complementary device.
Lothar Frey - One of the best experts on this subject based on the ideXlab platform.
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IECON - Integrated galvanically isolated MOSFET and IGBT gate-driver circuit with Switching Speed control
IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society, 2015Co-Authors: V.r.h. Lorentz, Tobias Heckel, R. Schwarz, Manja Marz, Lothar FreyAbstract:This paper presents a galvanically isolated gate-driver integrated circuit realized as an ASIC chipset providing a flexible control of the Switching Speed of the driven power switches (i.e., IGBT or MOSFET). The driver chipset provides signal and power transmission over a galvanic isolation, thus being able to drive low-side and high-side power switches in power converters. It provides independent control of turn-on and turn-off Switching Speed by modulating the gate turn-on and turn-off voltage slopes using burst pulses in the MHz range. This function is combined with regenerative Switching, thus reducing the energy losses in the gate-driver circuit of the power switch by more than 50%. The gate-driver ASIC chipset was manufactured in a high-temperature automotive grade 0.35μm mixed-signal CMOS technology, thus allowing Switching Speeds in the MHz range at voltage amplitudes as high as 18V. The paper shows the novel proposed driving concept with its implemented topology and simulation results. Experimental results validate the proposed gate-driver concept based on the manufactured ASIC chipset combined with a typical IGBT as power switch.
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Integrated galvanically isolated MOSFET and IGBT gate-driver circuit with Switching Speed control
IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society, 2015Co-Authors: V.r.h. Lorentz, Tobias Heckel, R. Schwarz, Manja Marz, Lothar FreyAbstract:This paper presents a galvanically isolated gate-driver integrated circuit realized as an ASIC chipset providing a flexible control of the Switching Speed of the driven power switches (i.e., IGBT or MOSFET). The driver chipset provides signal and power transmission over a galvanic isolation, thus being able to drive low-side and high-side power switches in power converters. It provides independent control of turn-on and turn-off Switching Speed by modulating the gate turn-on and turn-off voltage slopes using burst pulses in the MHz range. This function is combined with regenerative Switching, thus reducing the energy losses in the gate-driver circuit of the power switch by more than 50%. The gate-driver ASIC chipset was manufactured in a high-temperature automotive grade 0.35μm mixed-signal CMOS technology, thus allowing Switching Speeds in the MHz range at voltage amplitudes as high as 18V. The paper shows the novel proposed driving concept with its implemented topology and simulation results. Experimental results validate the proposed gate-driver concept based on the manufactured ASIC chipset combined with a typical IGBT as power switch.
Martijn J R Heck - One of the best experts on this subject based on the ideXlab platform.
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monolithic awg based discretely tunable laser diode with nanosecond Switching Speed
IEEE Photonics Technology Letters, 2009Co-Authors: Martijn J R Heck, A La Porta, X J M Leijtens, L Luc M Augustin, T De Vries, Barry Smalbrugge, R Notzel, Roberto Gaudino, D J Robbins, M K SmitAbstract:A novel concept for an arrayed-waveguide-grating (AWG)-based fast tunable laser is presented. It is fabricated in the InP-InGaAsP monolithic integration technology. Laser peaks have a sidemode suppression ratio of 30-40 dB. The wavelength Switching Speed is in the order of a few nanoseconds and Switching is achieved by a 1-mA bias current. The Switching between AWG channels is discrete and no laser operation takes place at wavelengths corresponding to other channels during the tuning process.
