The Experts below are selected from a list of 228 Experts worldwide ranked by ideXlab platform
Swaroop Ganguly - One of the best experts on this subject based on the ideXlab platform.
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Beyond optical enhancement due to embedded metal nanoparticles in thin-film solar cells
Applied Physics Express, 2016Co-Authors: Sundara Murthy Mopurisetty, Mohit Bajaj, Swaroop GangulyAbstract:Metal nanoparticles (MNPs) inside the active layer of thin-film solar cells are considered promising for light trapping, but they have also engendered concerns over their adverse impact on transport properties. Contrary to expectations, coupled optical and Electrical simulations indicate that a purely Electrical Effect due to MNPs might result in an enhancement of the cell performance in addition to the gain from optical (plasmonic) Effects. This Electrical enhancement strongly depends on the MNP/semiconductor barrier height. On the other hand, the anticipated degradation due to trap states and surface recombination at the MNP/semiconductor interface may in fact be negligible.
Y.k. Kim - One of the best experts on this subject based on the ideXlab platform.
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Electrical Effect in Organic Thin-Film Transistors Using Polymerized Gate Insulators by Vapor Deposition Polymerization (VDP)
Synthetic Metals, 2005Co-Authors: Sang-woo Pyo, D.h. Lee, J.r. Koo, J.h. Kim, J.h. Shim, J.s. Kim, Y.k. KimAbstract:Abstract We report that the organic thin film transistors were fabricated by the organic gate insulators transistor with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and 4,4′-oxydianiline (ODA), and cured at 150 °C for 1 hour followed by 200 °C for 1 hour. Details on the explanation of organic thin-film transistors (OTFTs) Electrical characteristics of 6FDA-ODA as gate insulators fabricated thermal co-deposition method.
Sundara Murthy Mopurisetty - One of the best experts on this subject based on the ideXlab platform.
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Beyond optical enhancement due to embedded metal nanoparticles in thin-film solar cells
Applied Physics Express, 2016Co-Authors: Sundara Murthy Mopurisetty, Mohit Bajaj, Swaroop GangulyAbstract:Metal nanoparticles (MNPs) inside the active layer of thin-film solar cells are considered promising for light trapping, but they have also engendered concerns over their adverse impact on transport properties. Contrary to expectations, coupled optical and Electrical simulations indicate that a purely Electrical Effect due to MNPs might result in an enhancement of the cell performance in addition to the gain from optical (plasmonic) Effects. This Electrical enhancement strongly depends on the MNP/semiconductor barrier height. On the other hand, the anticipated degradation due to trap states and surface recombination at the MNP/semiconductor interface may in fact be negligible.
Sang-woo Pyo - One of the best experts on this subject based on the ideXlab platform.
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Electrical Effect in Organic Thin-Film Transistors Using Polymerized Gate Insulators by Vapor Deposition Polymerization (VDP)
Synthetic Metals, 2005Co-Authors: Sang-woo Pyo, D.h. Lee, J.r. Koo, J.h. Kim, J.h. Shim, J.s. Kim, Y.k. KimAbstract:Abstract We report that the organic thin film transistors were fabricated by the organic gate insulators transistor with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and 4,4′-oxydianiline (ODA), and cured at 150 °C for 1 hour followed by 200 °C for 1 hour. Details on the explanation of organic thin-film transistors (OTFTs) Electrical characteristics of 6FDA-ODA as gate insulators fabricated thermal co-deposition method.
Chee-wee Liu - One of the best experts on this subject based on the ideXlab platform.
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Oxide roughness Effect on tunneling current of MOS diodes
IEEE Transactions on Electron Devices, 2002Co-Authors: B.-c. Hsu, Kuan-chao Chen, Chiu-ling Lai, Sheng-wei Lee, Chee-wee LiuAbstract:Two-dimensional (2-D) device simulation is used to investigate the tunneling current of metal ultra-thin-oxide silicon tunneling diodes with different oxide roughness. With the conformal nature of ultrathin oxide, the tunneling current density is simulated in both direct tunneling and Fowler-Nordheim (FN) tunneling regimes with different oxide roughness. The results show that oxide roughness dramatically enhances the tunneling current density and the 2-D Electrical Effect is responsible for this increment of tunneling current density. Furthermore, a set of devices with controlled oxide roughness is fabricated to verify the simulation results and our model qualitatively agrees with the experiment results.