The Experts below are selected from a list of 45675 Experts worldwide ranked by ideXlab platform
A Rohatgi - One of the best experts on this subject based on the ideXlab platform.
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plasma enhanced chemical vapor deposited oxide for low Surface Recombination velocity and high effective lifetime in silicon
Journal of Applied Physics, 1993Co-Authors: Z Chen, S K Pang, K Yasutake, A RohatgiAbstract:It is shown that plasma‐enhanced chemical‐vapor deposition (PECVD) of thin SiO2 on Si wafers followed by rapid thermal annealing (RTA) can result in very high effective carrier lifetime (≳5 ms) and extremely low Surface Recombination velocity (≤2 cm/s). Thin SiO2 (∼100 A) layers were prepared by direct PECVD at 250 °C and RTA was performed at 350 °C in forming gas. Detailed metal‐oxide‐semiconductor analysis and model calculations showed that such a low Recombination velocity is the result of moderately high positive oxide charge (5×1011–1×1012 cm−2 ) and relatively low midgap interface‐state density (5×1010–1×1011 cm−2 eV−1). RTA was found to be superior to furnace annealing, and a forming gas ambient was better than a nitrogen ambient for achieving a very low Surface Recombination velocity. Some degradation in the Surface Recombination velocity or effective lifetime was observed. It is found that a PECVD SiN cap on top of the thin SiO2 not only suppressed this degradation but also enhanced the effective...
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plasma enhanced chemical vapor deposited oxide for low Surface Recombination velocity and high effective lifetime in silicon
Journal of Applied Physics, 1993Co-Authors: Z Chen, S K Pang, K Yasutake, A RohatgiAbstract:It is shown that plasma‐enhanced chemical‐vapor deposition (PECVD) of thin SiO2 on Si wafers followed by rapid thermal annealing (RTA) can result in very high effective carrier lifetime (≳5 ms) and extremely low Surface Recombination velocity (≤2 cm/s). Thin SiO2 (∼100 A) layers were prepared by direct PECVD at 250 °C and RTA was performed at 350 °C in forming gas. Detailed metal‐oxide‐semiconductor analysis and model calculations showed that such a low Recombination velocity is the result of moderately high positive oxide charge (5×1011–1×1012 cm−2 ) and relatively low midgap interface‐state density (5×1010–1×1011 cm−2 eV−1). RTA was found to be superior to furnace annealing, and a forming gas ambient was better than a nitrogen ambient for achieving a very low Surface Recombination velocity. Some degradation in the Surface Recombination velocity or effective lifetime was observed. It is found that a PECVD SiN cap on top of the thin SiO2 not only suppressed this degradation but also enhanced the effective lifetime.
Z Chen - One of the best experts on this subject based on the ideXlab platform.
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plasma enhanced chemical vapor deposited oxide for low Surface Recombination velocity and high effective lifetime in silicon
Journal of Applied Physics, 1993Co-Authors: Z Chen, S K Pang, K Yasutake, A RohatgiAbstract:It is shown that plasma‐enhanced chemical‐vapor deposition (PECVD) of thin SiO2 on Si wafers followed by rapid thermal annealing (RTA) can result in very high effective carrier lifetime (≳5 ms) and extremely low Surface Recombination velocity (≤2 cm/s). Thin SiO2 (∼100 A) layers were prepared by direct PECVD at 250 °C and RTA was performed at 350 °C in forming gas. Detailed metal‐oxide‐semiconductor analysis and model calculations showed that such a low Recombination velocity is the result of moderately high positive oxide charge (5×1011–1×1012 cm−2 ) and relatively low midgap interface‐state density (5×1010–1×1011 cm−2 eV−1). RTA was found to be superior to furnace annealing, and a forming gas ambient was better than a nitrogen ambient for achieving a very low Surface Recombination velocity. Some degradation in the Surface Recombination velocity or effective lifetime was observed. It is found that a PECVD SiN cap on top of the thin SiO2 not only suppressed this degradation but also enhanced the effective...
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plasma enhanced chemical vapor deposited oxide for low Surface Recombination velocity and high effective lifetime in silicon
Journal of Applied Physics, 1993Co-Authors: Z Chen, S K Pang, K Yasutake, A RohatgiAbstract:It is shown that plasma‐enhanced chemical‐vapor deposition (PECVD) of thin SiO2 on Si wafers followed by rapid thermal annealing (RTA) can result in very high effective carrier lifetime (≳5 ms) and extremely low Surface Recombination velocity (≤2 cm/s). Thin SiO2 (∼100 A) layers were prepared by direct PECVD at 250 °C and RTA was performed at 350 °C in forming gas. Detailed metal‐oxide‐semiconductor analysis and model calculations showed that such a low Recombination velocity is the result of moderately high positive oxide charge (5×1011–1×1012 cm−2 ) and relatively low midgap interface‐state density (5×1010–1×1011 cm−2 eV−1). RTA was found to be superior to furnace annealing, and a forming gas ambient was better than a nitrogen ambient for achieving a very low Surface Recombination velocity. Some degradation in the Surface Recombination velocity or effective lifetime was observed. It is found that a PECVD SiN cap on top of the thin SiO2 not only suppressed this degradation but also enhanced the effective lifetime.
J S Harris - One of the best experts on this subject based on the ideXlab platform.
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diode ideality factor for Surface Recombination current in algaas gaas heterojunction bipolar transistors
IEEE Transactions on Electron Devices, 1992Co-Authors: J S HarrisAbstract:n-p-n AlGaAs/GaAs heterojunction bipolar transistors of various emitter areas have been fabricated to examine the diode ideality factor for Surface Recombination. These transistors are fabricated with and without exposed extrinsic base Surfaces. Comparison of the measured results indicates that the base Surface Recombination current increases exponentially with the base-emitter voltage with an ideality factor which is closer to 1 than 2(1 >
S K Pang - One of the best experts on this subject based on the ideXlab platform.
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plasma enhanced chemical vapor deposited oxide for low Surface Recombination velocity and high effective lifetime in silicon
Journal of Applied Physics, 1993Co-Authors: Z Chen, S K Pang, K Yasutake, A RohatgiAbstract:It is shown that plasma‐enhanced chemical‐vapor deposition (PECVD) of thin SiO2 on Si wafers followed by rapid thermal annealing (RTA) can result in very high effective carrier lifetime (≳5 ms) and extremely low Surface Recombination velocity (≤2 cm/s). Thin SiO2 (∼100 A) layers were prepared by direct PECVD at 250 °C and RTA was performed at 350 °C in forming gas. Detailed metal‐oxide‐semiconductor analysis and model calculations showed that such a low Recombination velocity is the result of moderately high positive oxide charge (5×1011–1×1012 cm−2 ) and relatively low midgap interface‐state density (5×1010–1×1011 cm−2 eV−1). RTA was found to be superior to furnace annealing, and a forming gas ambient was better than a nitrogen ambient for achieving a very low Surface Recombination velocity. Some degradation in the Surface Recombination velocity or effective lifetime was observed. It is found that a PECVD SiN cap on top of the thin SiO2 not only suppressed this degradation but also enhanced the effective...
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plasma enhanced chemical vapor deposited oxide for low Surface Recombination velocity and high effective lifetime in silicon
Journal of Applied Physics, 1993Co-Authors: Z Chen, S K Pang, K Yasutake, A RohatgiAbstract:It is shown that plasma‐enhanced chemical‐vapor deposition (PECVD) of thin SiO2 on Si wafers followed by rapid thermal annealing (RTA) can result in very high effective carrier lifetime (≳5 ms) and extremely low Surface Recombination velocity (≤2 cm/s). Thin SiO2 (∼100 A) layers were prepared by direct PECVD at 250 °C and RTA was performed at 350 °C in forming gas. Detailed metal‐oxide‐semiconductor analysis and model calculations showed that such a low Recombination velocity is the result of moderately high positive oxide charge (5×1011–1×1012 cm−2 ) and relatively low midgap interface‐state density (5×1010–1×1011 cm−2 eV−1). RTA was found to be superior to furnace annealing, and a forming gas ambient was better than a nitrogen ambient for achieving a very low Surface Recombination velocity. Some degradation in the Surface Recombination velocity or effective lifetime was observed. It is found that a PECVD SiN cap on top of the thin SiO2 not only suppressed this degradation but also enhanced the effective lifetime.
K Yasutake - One of the best experts on this subject based on the ideXlab platform.
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plasma enhanced chemical vapor deposited oxide for low Surface Recombination velocity and high effective lifetime in silicon
Journal of Applied Physics, 1993Co-Authors: Z Chen, S K Pang, K Yasutake, A RohatgiAbstract:It is shown that plasma‐enhanced chemical‐vapor deposition (PECVD) of thin SiO2 on Si wafers followed by rapid thermal annealing (RTA) can result in very high effective carrier lifetime (≳5 ms) and extremely low Surface Recombination velocity (≤2 cm/s). Thin SiO2 (∼100 A) layers were prepared by direct PECVD at 250 °C and RTA was performed at 350 °C in forming gas. Detailed metal‐oxide‐semiconductor analysis and model calculations showed that such a low Recombination velocity is the result of moderately high positive oxide charge (5×1011–1×1012 cm−2 ) and relatively low midgap interface‐state density (5×1010–1×1011 cm−2 eV−1). RTA was found to be superior to furnace annealing, and a forming gas ambient was better than a nitrogen ambient for achieving a very low Surface Recombination velocity. Some degradation in the Surface Recombination velocity or effective lifetime was observed. It is found that a PECVD SiN cap on top of the thin SiO2 not only suppressed this degradation but also enhanced the effective...
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plasma enhanced chemical vapor deposited oxide for low Surface Recombination velocity and high effective lifetime in silicon
Journal of Applied Physics, 1993Co-Authors: Z Chen, S K Pang, K Yasutake, A RohatgiAbstract:It is shown that plasma‐enhanced chemical‐vapor deposition (PECVD) of thin SiO2 on Si wafers followed by rapid thermal annealing (RTA) can result in very high effective carrier lifetime (≳5 ms) and extremely low Surface Recombination velocity (≤2 cm/s). Thin SiO2 (∼100 A) layers were prepared by direct PECVD at 250 °C and RTA was performed at 350 °C in forming gas. Detailed metal‐oxide‐semiconductor analysis and model calculations showed that such a low Recombination velocity is the result of moderately high positive oxide charge (5×1011–1×1012 cm−2 ) and relatively low midgap interface‐state density (5×1010–1×1011 cm−2 eV−1). RTA was found to be superior to furnace annealing, and a forming gas ambient was better than a nitrogen ambient for achieving a very low Surface Recombination velocity. Some degradation in the Surface Recombination velocity or effective lifetime was observed. It is found that a PECVD SiN cap on top of the thin SiO2 not only suppressed this degradation but also enhanced the effective lifetime.
