The Experts below are selected from a list of 297 Experts worldwide ranked by ideXlab platform
O. Jambois - One of the best experts on this subject based on the ideXlab platform.
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Current transport and Electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions
Journal of Applied Physics, 2009Co-Authors: O. Jambois, Y. Berencen, Khalil Hijazi, M. Wojdak, A. J. Kenyon, Fabrice Gourbilleau, Richard Rizk, B. GarridoAbstract:We have studied the current transport and Electroluminescence properties of metal oxide semiconductor (MOS) devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole–Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler–Nordheim tunneling. The results suggest that the Electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an Electroluminescence power efficiency above 10−3%.
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Electroluminescence from C- and Si- rich silicon oxides in continuous wave and pulsed excitation
2007Co-Authors: O. Jambois, A. Perez-rodriguez, P. Pellegrino, Josep Carreras, M. Peralvarez, Caroline Bonafos, Sylvie Schamm-chardon, Gérard Benassayag, Vincent Paillard, M. PeregoAbstract:This work reports the Electroluminescence from carbon-and silicon-rich silicon oxide layers under continuous wave and pulsed excitation. The films were fabricated by Si and C ion implantation at low energy in 40 nm thick SiO2, followed by annealing at 1100degC. In continuous wave excitation, white Electroluminescence has been observed. Structural and optical studies allow assigning it to Si nanocrystals for the red part of the spectrum, and to C-related centers for the blue and green components. The external efficiency has been estimated to 10-4%. Electrical characteristics show a Fowler-Nordheim behavior for voltages above 25 V, equal to the onset of Electroluminescence. This suggests that light emission is related to the impact ionization of radiative centers. In pulsed excitation, Electroluminescence has been observed for a voltage of less than 10 V. It is shown that the C-rich centers are not involved in this process, but a solution to obtain their excitation is proposed.
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White Electroluminescence from C- and Si-rich thin silicon oxides
Applied Physics Letters, 2006Co-Authors: O. Jambois, B. Garrido, A. Perez-rodriguez, P. Pellegrino, Josep Carreras, Caroline Bonafos, Gérard Benassayag, J. Montserrat, Sylvie Schamm-chardonAbstract:White Electroluminescence from carbon- and silicon-rich silicon oxide layers is reported. The films were fabricated by Si and C ion implantation at low energy in 40nm thick SiO2, followed by annealing at 1100°C. Structural and optical studies allow assigning the Electroluminescence to Si nanocrystals for the red part of the spectrum, and to C-related centers for the blue and green components. The external efficiency has been estimated to 10−4%. Electrical characteristics show a Fowler-Nordheim behavior for voltages above 25V, corresponding to the onset of Electroluminescence. This suggests that light emission is related to the impact ionization of radiative centers.
Sylvie Schamm-chardon - One of the best experts on this subject based on the ideXlab platform.
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Electroluminescence from C- and Si- rich silicon oxides in continuous wave and pulsed excitation
2007Co-Authors: O. Jambois, A. Perez-rodriguez, P. Pellegrino, Josep Carreras, M. Peralvarez, Caroline Bonafos, Sylvie Schamm-chardon, Gérard Benassayag, Vincent Paillard, M. PeregoAbstract:This work reports the Electroluminescence from carbon-and silicon-rich silicon oxide layers under continuous wave and pulsed excitation. The films were fabricated by Si and C ion implantation at low energy in 40 nm thick SiO2, followed by annealing at 1100degC. In continuous wave excitation, white Electroluminescence has been observed. Structural and optical studies allow assigning it to Si nanocrystals for the red part of the spectrum, and to C-related centers for the blue and green components. The external efficiency has been estimated to 10-4%. Electrical characteristics show a Fowler-Nordheim behavior for voltages above 25 V, equal to the onset of Electroluminescence. This suggests that light emission is related to the impact ionization of radiative centers. In pulsed excitation, Electroluminescence has been observed for a voltage of less than 10 V. It is shown that the C-rich centers are not involved in this process, but a solution to obtain their excitation is proposed.
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White Electroluminescence from C- and Si-rich thin silicon oxides
Applied Physics Letters, 2006Co-Authors: O. Jambois, B. Garrido, A. Perez-rodriguez, P. Pellegrino, Josep Carreras, Caroline Bonafos, Gérard Benassayag, J. Montserrat, Sylvie Schamm-chardonAbstract:White Electroluminescence from carbon- and silicon-rich silicon oxide layers is reported. The films were fabricated by Si and C ion implantation at low energy in 40nm thick SiO2, followed by annealing at 1100°C. Structural and optical studies allow assigning the Electroluminescence to Si nanocrystals for the red part of the spectrum, and to C-related centers for the blue and green components. The external efficiency has been estimated to 10−4%. Electrical characteristics show a Fowler-Nordheim behavior for voltages above 25V, corresponding to the onset of Electroluminescence. This suggests that light emission is related to the impact ionization of radiative centers.
B. Garrido - One of the best experts on this subject based on the ideXlab platform.
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Current transport and Electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions
Journal of Applied Physics, 2009Co-Authors: O. Jambois, Y. Berencen, Khalil Hijazi, M. Wojdak, A. J. Kenyon, Fabrice Gourbilleau, Richard Rizk, B. GarridoAbstract:We have studied the current transport and Electroluminescence properties of metal oxide semiconductor (MOS) devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole–Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler–Nordheim tunneling. The results suggest that the Electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an Electroluminescence power efficiency above 10−3%.
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White Electroluminescence from C- and Si-rich thin silicon oxides
Applied Physics Letters, 2006Co-Authors: O. Jambois, B. Garrido, A. Perez-rodriguez, P. Pellegrino, Josep Carreras, Caroline Bonafos, Gérard Benassayag, J. Montserrat, Sylvie Schamm-chardonAbstract:White Electroluminescence from carbon- and silicon-rich silicon oxide layers is reported. The films were fabricated by Si and C ion implantation at low energy in 40nm thick SiO2, followed by annealing at 1100°C. Structural and optical studies allow assigning the Electroluminescence to Si nanocrystals for the red part of the spectrum, and to C-related centers for the blue and green components. The external efficiency has been estimated to 10−4%. Electrical characteristics show a Fowler-Nordheim behavior for voltages above 25V, corresponding to the onset of Electroluminescence. This suggests that light emission is related to the impact ionization of radiative centers.
Michael F Rubner - One of the best experts on this subject based on the ideXlab platform.
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Electroluminescence from cdse quantum dot polymer composites
Applied Physics Letters, 1995Co-Authors: B O Dabbousi, Moungi G Bawendi, O Onitsuka, Michael F RubnerAbstract:Electroluminescence is obtained from nearly monodisperse CdSe nanocrystallites (quantum dots) incorporated into thin films (1000 A) of polyvinylcarbazole (PVK) and an oxadiazole derivative (t‐Bu‐PBD) and sandwiched between ITO and Al electrodes. The Electroluminescence and photoluminescence spectra (bandwidths ≤40 nm) are nearly identical at room temperature and are tunable from ∼530 to ∼650 nm by varying the size of the dots. Voltage studies at 77 K indicate that while only the dots electroluminesce at the lower voltages, both the dots and the PVK matrix electroluminesce at higher applied voltages. Variable temperature studies indicate that the Electroluminescence efficiency increases substantially as the films are cooled down to cryogenic temperatures.
A. Perez-rodriguez - One of the best experts on this subject based on the ideXlab platform.
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Electroluminescence from C- and Si- rich silicon oxides in continuous wave and pulsed excitation
2007Co-Authors: O. Jambois, A. Perez-rodriguez, P. Pellegrino, Josep Carreras, M. Peralvarez, Caroline Bonafos, Sylvie Schamm-chardon, Gérard Benassayag, Vincent Paillard, M. PeregoAbstract:This work reports the Electroluminescence from carbon-and silicon-rich silicon oxide layers under continuous wave and pulsed excitation. The films were fabricated by Si and C ion implantation at low energy in 40 nm thick SiO2, followed by annealing at 1100degC. In continuous wave excitation, white Electroluminescence has been observed. Structural and optical studies allow assigning it to Si nanocrystals for the red part of the spectrum, and to C-related centers for the blue and green components. The external efficiency has been estimated to 10-4%. Electrical characteristics show a Fowler-Nordheim behavior for voltages above 25 V, equal to the onset of Electroluminescence. This suggests that light emission is related to the impact ionization of radiative centers. In pulsed excitation, Electroluminescence has been observed for a voltage of less than 10 V. It is shown that the C-rich centers are not involved in this process, but a solution to obtain their excitation is proposed.
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White Electroluminescence from C- and Si-rich thin silicon oxides
Applied Physics Letters, 2006Co-Authors: O. Jambois, B. Garrido, A. Perez-rodriguez, P. Pellegrino, Josep Carreras, Caroline Bonafos, Gérard Benassayag, J. Montserrat, Sylvie Schamm-chardonAbstract:White Electroluminescence from carbon- and silicon-rich silicon oxide layers is reported. The films were fabricated by Si and C ion implantation at low energy in 40nm thick SiO2, followed by annealing at 1100°C. Structural and optical studies allow assigning the Electroluminescence to Si nanocrystals for the red part of the spectrum, and to C-related centers for the blue and green components. The external efficiency has been estimated to 10−4%. Electrical characteristics show a Fowler-Nordheim behavior for voltages above 25V, corresponding to the onset of Electroluminescence. This suggests that light emission is related to the impact ionization of radiative centers.