The Experts below are selected from a list of 315 Experts worldwide ranked by ideXlab platform
Christophe Ballif - One of the best experts on this subject based on the ideXlab platform.
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amorphous Silicon Oxide window layers for high efficiency Silicon heterojunction solar cells
Journal of Applied Physics, 2014Co-Authors: Johannes Peter Seif, Antoine Descoeudres, Miha Filipic, F Smole, Marko Topic, Zachary C Holman, Stefaan De Wolf, Christophe BallifAbstract:In amorphous/crystalline Silicon heterojunction solar cells, optical losses can be mitigated by replacing the amorphous Silicon films by wider bandgap amorphous Silicon Oxide layers. In this article, we use stacks of intrinsic amorphous Silicon and amorphous Silicon Oxide as front intrinsic buffer layers and show that this increases the short-circuit current density by up to 0.43 mA/cm2 due to less reflection and a higher transparency at short wavelengths. Additionally, high open-circuit voltages can be maintained, thanks to good interface passivation. However, we find that the gain in current is more than offset by losses in fill factor. Aided by device simulations, we link these losses to impeded carrier collection fundamentally caused by the increased valence band offset at the amorphous/crystalline interface. Despite this, carrier extraction can be improved by raising the temperature; we find that cells with amorphous Silicon Oxide window layers show an even lower temperature coefficient than referenc...
Tsung-ming Tsai - One of the best experts on this subject based on the ideXlab platform.
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Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
IEEE Electron Device Letters, 2013Co-Authors: Kuan-chang Chang, Tsung-ming Tsai, Ting-chang Chang, Hsing-hua Wu, Jung-hui Chen, Geng-wei Chang, Yu-ting Su, Min-chen Chen, Jian-yu Chen, Cheng-wei TungAbstract:Traditionally, a large number of Silicon Oxide materials are extensively used as various dielectrics for semiconductor industries. In general, Silicon Oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into Silicon Oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped Silicon Oxide RRAM.
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Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
IEEE Electron Device Letters, 2012Co-Authors: Tsung-ming Tsai, Kuan-chang Chang, Ting-chang Chang, Geng-wei Chang, Min-chen Chen, Siang-lan Chuang, Hui-chun Huang, Ya-liang Yang, Tai-fa Young, Bae-heng TsengAbstract:In this letter, we successfully produced resistive switching behaviors by nickel doped into Silicon Oxide at room temperature. The nickel element was doped into Silicon Oxide, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology. Based on the proposed method, satisfactory reliability of the resistance switching device can be demonstrated by endurance and retention evaluation. We believe that the Silicon Oxide doped with nickel at room temperature is a promising method for resistive random access memory nonvolatile memory applications due to its compatibility with the IC processes.
Kuan-chang Chang - One of the best experts on this subject based on the ideXlab platform.
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Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
IEEE Electron Device Letters, 2013Co-Authors: Kuan-chang Chang, Tsung-ming Tsai, Ting-chang Chang, Hsing-hua Wu, Jung-hui Chen, Geng-wei Chang, Yu-ting Su, Min-chen Chen, Jian-yu Chen, Cheng-wei TungAbstract:Traditionally, a large number of Silicon Oxide materials are extensively used as various dielectrics for semiconductor industries. In general, Silicon Oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into Silicon Oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped Silicon Oxide RRAM.
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Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
IEEE Electron Device Letters, 2012Co-Authors: Tsung-ming Tsai, Kuan-chang Chang, Ting-chang Chang, Geng-wei Chang, Min-chen Chen, Siang-lan Chuang, Hui-chun Huang, Ya-liang Yang, Tai-fa Young, Bae-heng TsengAbstract:In this letter, we successfully produced resistive switching behaviors by nickel doped into Silicon Oxide at room temperature. The nickel element was doped into Silicon Oxide, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology. Based on the proposed method, satisfactory reliability of the resistance switching device can be demonstrated by endurance and retention evaluation. We believe that the Silicon Oxide doped with nickel at room temperature is a promising method for resistive random access memory nonvolatile memory applications due to its compatibility with the IC processes.
Friedhelm Finger - One of the best experts on this subject based on the ideXlab platform.
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Optimized amorphous Silicon Oxide buffer layers for Silicon heterojunction solar cells with microcrystalline Silicon Oxide contact layers
Journal of Applied Physics, 2013Co-Authors: Kaining Ding, Urs Aeberhard, Friedhelm FingerAbstract:We report on the systematic optimization of the intrinsic amorphous Silicon Oxide buffer layer in interplay with doped microcrystalline Silicon Oxide contact layers for Silicon heterojunction solar cells using all Silicon Oxide based functional layers on flat p-type float-zone wafers. While the surface passivation quality is comparably good within a wide range of low oxygen contents, the optical band gap increases and the dark conductivity decreases with increasing oxygen content, giving rise to an inevitable trade-off between optical transparency and electrical conductivity. On the cell level, fill factor FF and short circuit current density Jsc losses compete with the open circuit voltage Voc gains resulting from a thickness increase of the front buffer layers, whereas Jsc and Voc gains compete with FF losses resulting from increasing thickness of the rear buffer layers. We obtained the highest active area efficiency of ηact = 18.5% with Voc = 664 mV, Jsc = 35.7 mA/cm2, and FF = 78.0% using 4 nm front a...
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Silicon heterojunction solar cell with amorphous Silicon Oxide buffer and microcrystalline Silicon Oxide contact layers
Physica Status Solidi-rapid Research Letters, 2012Co-Authors: Kaining Ding, Urs Aeberhard, Friedhelm FingerAbstract:This Letter reports on the fabrication and characterization of Silicon heterojunction solar cells with Silicon Oxide based buffer (intrinsic amorphous Silicon Oxide) and contact layers (doped microcrystalline Silicon Oxide) on flat p-type wafers. The critical dependency of the cell performance on the front and rear buffer layer thickness reveals a trade-off between the open circuit voltage Voc and the fill factor FF. At the optimum, the highest efficiency of 18.5% (active area = 0.67 cm2) was achieved with Voc = 664 mV, short circuit current Jsc = 35.7 mA/cm2 and FF = 78.0%. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Ting-chang Chang - One of the best experts on this subject based on the ideXlab platform.
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Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
IEEE Electron Device Letters, 2013Co-Authors: Kuan-chang Chang, Tsung-ming Tsai, Ting-chang Chang, Hsing-hua Wu, Jung-hui Chen, Geng-wei Chang, Yu-ting Su, Min-chen Chen, Jian-yu Chen, Cheng-wei TungAbstract:Traditionally, a large number of Silicon Oxide materials are extensively used as various dielectrics for semiconductor industries. In general, Silicon Oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into Silicon Oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped Silicon Oxide RRAM.
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Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
IEEE Electron Device Letters, 2012Co-Authors: Tsung-ming Tsai, Kuan-chang Chang, Ting-chang Chang, Geng-wei Chang, Min-chen Chen, Siang-lan Chuang, Hui-chun Huang, Ya-liang Yang, Tai-fa Young, Bae-heng TsengAbstract:In this letter, we successfully produced resistive switching behaviors by nickel doped into Silicon Oxide at room temperature. The nickel element was doped into Silicon Oxide, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology. Based on the proposed method, satisfactory reliability of the resistance switching device can be demonstrated by endurance and retention evaluation. We believe that the Silicon Oxide doped with nickel at room temperature is a promising method for resistive random access memory nonvolatile memory applications due to its compatibility with the IC processes.
