The Experts below are selected from a list of 3012 Experts worldwide ranked by ideXlab platform
R G Clark - One of the best experts on this subject based on the ideXlab platform.
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a silicon radio frequency single electron transistor
Applied Physics Letters, 2008Co-Authors: S J Angus, Andrew J. Ferguson, A S Dzurak, R G ClarkAbstract:We report the demonstration of a silicon radio-frequency single electron transistor. The island is defined by electrostatically tunable tunnel barriers in a narrow channel field effect transistor. Charge sensitivities of better than 10μe∕Hz are demonstrated at megahertz bandwidth. These results demonstrate that silicon may be used to fabricate fast, sensitive Electrometers.
A Fujiwara - One of the best experts on this subject based on the ideXlab platform.
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single electron counting statistics and its circuit application in nanoscale field effect transistors at room temperature
Nanotechnology, 2009Co-Authors: Katsuhiko Nishiguchi, A FujiwaraAbstract:A circuit utilizing single electrons is demonstrated at room temperature. Individual electrons randomly passing through the nanoscale silicon-on-insulator metal-oxide-semiconductor field-effect transistor (MOSFET) are monitored by an Electrometer in real time. Such a random behavior of single electrons is used for high-quality random-number generation suitable for data processing which stochastically extracts the most preferable pattern among various ones. MOSFET-based random-number generation allows fast operation as well as high controllability, which leads to flexible extraction of the preferable pattern.
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room temperature operating data processing circuit based on single electron transfer and detection with metal oxide semiconductor field effect transistor technology
Applied Physics Letters, 2006Co-Authors: Katsuhiko Nishiguchi, A Fujiwara, Hiroshi Inokawa, Yukinori Ono, Yasuo TakahashiAbstract:A single-electron-based circuit, in which electrons are transferred one by one with a turnstile and subsequently detected with a high-charge-sensitivity Electrometer, was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors alternately, allows single-electron transfer at room temperature owing to electric-field-assisted shrinkage of the single-electron box. It also achieves fast single-electron transfer (less than 10ns) and extremely long retention (more than 104s). We have applied these features to a multilevel memory and a time-division weighted sum circuit for a digital-to-analog converter.
Katsuhiko Nishiguchi - One of the best experts on this subject based on the ideXlab platform.
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single electron counting statistics and its circuit application in nanoscale field effect transistors at room temperature
Nanotechnology, 2009Co-Authors: Katsuhiko Nishiguchi, A FujiwaraAbstract:A circuit utilizing single electrons is demonstrated at room temperature. Individual electrons randomly passing through the nanoscale silicon-on-insulator metal-oxide-semiconductor field-effect transistor (MOSFET) are monitored by an Electrometer in real time. Such a random behavior of single electrons is used for high-quality random-number generation suitable for data processing which stochastically extracts the most preferable pattern among various ones. MOSFET-based random-number generation allows fast operation as well as high controllability, which leads to flexible extraction of the preferable pattern.
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room temperature operating data processing circuit based on single electron transfer and detection with metal oxide semiconductor field effect transistor technology
Applied Physics Letters, 2006Co-Authors: Katsuhiko Nishiguchi, A Fujiwara, Hiroshi Inokawa, Yukinori Ono, Yasuo TakahashiAbstract:A single-electron-based circuit, in which electrons are transferred one by one with a turnstile and subsequently detected with a high-charge-sensitivity Electrometer, was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors alternately, allows single-electron transfer at room temperature owing to electric-field-assisted shrinkage of the single-electron box. It also achieves fast single-electron transfer (less than 10ns) and extremely long retention (more than 104s). We have applied these features to a multilevel memory and a time-division weighted sum circuit for a digital-to-analog converter.
Per Delsing - One of the best experts on this subject based on the ideXlab platform.
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excess dissipation in a single electron box the sisyphus resistance
Nano Letters, 2010Co-Authors: Fredrik Persson, C M Wilson, Martin Sandberg, Goran Johansson, Per DelsingAbstract:We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for Electrometery applications.
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excess dissipation in a single electron box the sisyphus resistance
arXiv: Superconductivity, 2009Co-Authors: Fredrik Persson, C M Wilson, Martin Sandberg, Goran Johansson, Per DelsingAbstract:We present measurements of the ac response of a single-electron box (SEB). We apply an rf signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for Electrometery applications.
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the radio frequency single electron transistor rf set a fast and ultrasensitive Electrometer
Science, 1998Co-Authors: R J Schoelkopf, Per Delsing, Paula Wahlgren, A A Kozhevnikov, D E ProberAbstract:A new type of Electrometer is described that uses a single-electron transistor (SET) and that allows large operating speeds and extremely high charge sensitivity. The SET readout was accomplished by measuring the damping of a 1.7-gigahertz resonant circuit in which the device is embedded, and in some ways is the electrostatic “dual” of the well-known radio-frequency superconducting quantum interference device. The device is more than two orders of magnitude faster than previous single-electron devices, with a constant gain from dc to greater than 100 megahertz. For a still-unoptimized device, a charge sensitivity of 1.2 × 10 −5 e / hertz was obtained at a frequency of 1.1 megahertz, which is about an order of magnitude better than a typical, 1/ f -noise-limited SET, and corresponds to an energy sensitivity (in joules per hertz) of about 41 ℏ.
S J Angus - One of the best experts on this subject based on the ideXlab platform.
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a silicon radio frequency single electron transistor
Applied Physics Letters, 2008Co-Authors: S J Angus, Andrew J. Ferguson, A S Dzurak, R G ClarkAbstract:We report the demonstration of a silicon radio-frequency single electron transistor. The island is defined by electrostatically tunable tunnel barriers in a narrow channel field effect transistor. Charge sensitivities of better than 10μe∕Hz are demonstrated at megahertz bandwidth. These results demonstrate that silicon may be used to fabricate fast, sensitive Electrometers.