The Experts below are selected from a list of 288 Experts worldwide ranked by ideXlab platform
M.a Vannice - One of the best experts on this subject based on the ideXlab platform.
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Distinguishing surface and bulk Electron Charge carriers for ZnO powders
Journal of Molecular Catalysis A-chemical, 2000Co-Authors: A. B. Walters, B. K. Na, M.a VanniceAbstract:Abstract A two-Charge-carrier model that assumes coexisting high-mobility, low-concentration bulk, semiconduction Electron Charge carriers and low-mobility, variable-concentration surface-trapped-Electron Charge carriers is used to explain measured electrical and chemisorption properties of ZnO powders. This model resolves two serious quantitative issues not explained by the single-Charge-carrier-type model used for our previously reported studies. Not explainable using a single-Charge-carrier model are (1) wide variations in measured Electron mobility values due to variations in surface treatments and (2) calculated Electron number densities too low to match measured Electron-transfer chemisorption results. Our two-Charge-carrier model for ZnO powders assigns high-mobility bulk Electrons to n-type ZnO semiconduction and low-mobility surface Electrons to ( V o ) 2− and ( V o + ) − surface oxide ion Electron trapping vacancies. This model results in a high variation in surface Electron number density due to surface treatments, while the mobilities for both the bulk and surface Charge carriers remain constant. The model also calculates much higher surface Electron number densities that better match Charge-transfer chemisorption results. The two-Charge-carrier model is expected to have significant importance in explaining chemisorption and catalysis on ZnO and other similar powder oxides. In particular, the two-Charge-carrier model can yield two to three orders of magnitude higher calculated concentrations of surface Electrons than for the single-Charge-carrier model for any powder with coexisting high-mobility, semiconduction, bulk Charge carriers and variable concentrations of low-mobility, surface Charge carriers.
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Distinguishing surface and bulk Electron Charge carriers for ZnO powders
Journal of Molecular Catalysis A: Chemical, 2000Co-Authors: A. B. Walters, B. K. Na, C.-c. Liu, M.a VanniceAbstract:A two-Charge-carrier model that assumes coexisting high-mobility, low-concentration bulk, semiconduction Electron Charge carriers and low-mobility, variable-concentration surface-trapped-Electron Charge carriers is used to explain measured electrical and chemisorption properties of ZnO powders. This model resolves two serious quantitative issues not explained by the single-Charge-carrier-type model used for our previously reported studies. Not explainable using a single-Charge-carrier model are (1) wide variations in measured Electron mobility values due to variations in surface treatments and (2) calculated Electron number densities too low to match measured Electron-transfer chemisorption results. Our two-Charge-carrier model for ZnO powders assigns high-mobility bulk Electrons to n-type ZnO semiconduction and low-mobility surface Electrons to (V(o))2-and (V(o)/+)-surface oxide ion Electron trapping vacancies. This model results in a high variation in surface Electron number density due to surface treatments, while the mobilities for both the bulk and surface Charge carriers remain constant. The model also calculates much higher surface Electron number densities that better match Charge-transfer chemisorption results. The two-Charge-carrier model is expected to have significant importance in explaining chemisorption and catalysis on ZnO and other similar powder oxides. In particular, the two-Charge-carrier model can yield two to three orders of magnitude higher calculated concentrations of surface Electrons than for the single-Charge-carrier model for any powder with coexisting high-mobility, semiconduction, bulk Charge carriers and variable concentrations of low-mobility, surface Charge carriers. (C) 2000 Published by Elsevier Science B.V.
A. B. Walters - One of the best experts on this subject based on the ideXlab platform.
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Distinguishing surface and bulk Electron Charge carriers for ZnO powders
Journal of Molecular Catalysis A-chemical, 2000Co-Authors: A. B. Walters, B. K. Na, M.a VanniceAbstract:Abstract A two-Charge-carrier model that assumes coexisting high-mobility, low-concentration bulk, semiconduction Electron Charge carriers and low-mobility, variable-concentration surface-trapped-Electron Charge carriers is used to explain measured electrical and chemisorption properties of ZnO powders. This model resolves two serious quantitative issues not explained by the single-Charge-carrier-type model used for our previously reported studies. Not explainable using a single-Charge-carrier model are (1) wide variations in measured Electron mobility values due to variations in surface treatments and (2) calculated Electron number densities too low to match measured Electron-transfer chemisorption results. Our two-Charge-carrier model for ZnO powders assigns high-mobility bulk Electrons to n-type ZnO semiconduction and low-mobility surface Electrons to ( V o ) 2− and ( V o + ) − surface oxide ion Electron trapping vacancies. This model results in a high variation in surface Electron number density due to surface treatments, while the mobilities for both the bulk and surface Charge carriers remain constant. The model also calculates much higher surface Electron number densities that better match Charge-transfer chemisorption results. The two-Charge-carrier model is expected to have significant importance in explaining chemisorption and catalysis on ZnO and other similar powder oxides. In particular, the two-Charge-carrier model can yield two to three orders of magnitude higher calculated concentrations of surface Electrons than for the single-Charge-carrier model for any powder with coexisting high-mobility, semiconduction, bulk Charge carriers and variable concentrations of low-mobility, surface Charge carriers.
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Distinguishing surface and bulk Electron Charge carriers for ZnO powders
Journal of Molecular Catalysis A: Chemical, 2000Co-Authors: A. B. Walters, B. K. Na, C.-c. Liu, M.a VanniceAbstract:A two-Charge-carrier model that assumes coexisting high-mobility, low-concentration bulk, semiconduction Electron Charge carriers and low-mobility, variable-concentration surface-trapped-Electron Charge carriers is used to explain measured electrical and chemisorption properties of ZnO powders. This model resolves two serious quantitative issues not explained by the single-Charge-carrier-type model used for our previously reported studies. Not explainable using a single-Charge-carrier model are (1) wide variations in measured Electron mobility values due to variations in surface treatments and (2) calculated Electron number densities too low to match measured Electron-transfer chemisorption results. Our two-Charge-carrier model for ZnO powders assigns high-mobility bulk Electrons to n-type ZnO semiconduction and low-mobility surface Electrons to (V(o))2-and (V(o)/+)-surface oxide ion Electron trapping vacancies. This model results in a high variation in surface Electron number density due to surface treatments, while the mobilities for both the bulk and surface Charge carriers remain constant. The model also calculates much higher surface Electron number densities that better match Charge-transfer chemisorption results. The two-Charge-carrier model is expected to have significant importance in explaining chemisorption and catalysis on ZnO and other similar powder oxides. In particular, the two-Charge-carrier model can yield two to three orders of magnitude higher calculated concentrations of surface Electrons than for the single-Charge-carrier model for any powder with coexisting high-mobility, semiconduction, bulk Charge carriers and variable concentrations of low-mobility, surface Charge carriers. (C) 2000 Published by Elsevier Science B.V.
A.a. Seshia - One of the best experts on this subject based on the ideXlab platform.
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A Micro Resonant Electrometer with Single-Electron Charge Resolution at Room Temperature
2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS), 2020Co-Authors: Dongyang Chen, Hemin Zhang, Milind Pandit, Guillermo Sobreviela, Yong Wang, Qian Zhang, A.a. SeshiaAbstract:This paper reports a mode-localized resonant electrometer with 9-Electron Charge resolution in room temperature. To the best knowledge of the authors, it is the highest resolution level for MEMS resonant electrometers. It uses a 3 degree-of-freedom (DoF) weakly coupled resonators (WCRs) as sensing element, then input Charge causes stiffness perturbation to one resonator and leads to a drastic change of the mode shape owing to the mode localization phenomenon. Under the closed-loop test, the relative sensitivity based on the amplitude ratios (2280858ppm) is −900 times higher than that of the frequency (2539ppm) with the input Charge of 380/C. The resolution of the electrometer is 9.21 e/√Hz. Compared to the state-of-the-art MEMS resonant electrometer (5250e/√Hz) [1], the resolution is improved by nearly three orders of magnitude.
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A Micro Resonant Electrometer with Single-Electron Charge Resolution at Room Temperature
2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS), 2020Co-Authors: Dongyang Chen, Hemin Zhang, Milind Pandit, Guillermo Sobreviela, Yong Wang, Qian Zhang, A.a. SeshiaAbstract:The measurement of Charge at single Electron level at room temperature in analog and digital Electronics is limited due to considerable thermal noise. In this work, we propose a method of Charge detection with resolution of 0.17e/√Hz at room temperature by resonant electrometry based on tracking quasi-digital frequency shift of a force sensitive micromechanical oscillator stemming from the modal stiffness perturbation pertaining to Charge input. We build a closed-loop system for the measurement and perform real-time monitoring of Charge accumulation on the gate corresponding to 67 Electrons per step. Analysis on thermomechanical noise suggests an ultimate threshold of Charge resolution at the order of 10-4e/√Hz is possible benefitting from the high Q-factor of the resonator.
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Room temperature electrometry with SUB-10 Electron Charge resolution
Journal of Micromechanics and Microengineering, 2008Co-Authors: A.a. SeshiaAbstract:We have fabricated and demonstrated a micromachined electrometer with a Charge resolution of 6 e/√Hz, operating at room temperature and ambient pressure. We thus show that high-resolution electrometry is realizable at room temperature and competitive with alternative low temperature (
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A micromechanical electrometer approaching single-Electron Charge resolution at room temperature
2008 IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008Co-Authors: A.a. SeshiaAbstract:We report a MEMS electrometer with a measured Charge noise floor approaching the single-Electron threshold (4 e/radicHz) in air at room temperature. The electrometer is based on a modulated capacitor constructed from a micromechanical resonator, which converts DC Charge at the input to an output AC voltage with primary frequency components at twice the modulation frequency. The result presented herein confirms earlier results obtained through analytical modeling and provides a path towards achieving sub-Electron Charge resolution at room temperature.
P Beltrame - One of the best experts on this subject based on the ideXlab platform.
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observation and applications of single Electron Charge signals in the xenon100 experiment
Journal of Physics G, 2014Co-Authors: E Aprile, M Alfonsi, K Arisaka, F Arneodo, C Balan, L Baudis, B Bauermeister, A Behrens, P BeltrameAbstract:The XENON100 dark matter experiment uses liquid xenon in a time projection chamber (TPC) to measure xenon nuclear recoils resulting from the scattering of dark matter weakly interacting massive particles (WIMPs). In this paper, we report the observation of single-Electron Charge signals which are not related to WIMP interactions. These signals, which show the excellent sensitivity of the detector to small Charge signals, are explained as being due to the photoionization of impurities in the liquid xenon and of the metal components inside the TPC. They are used as a unique calibration source to characterize the detector. We explain how we can infer crucial parameters for the XENON100 experiment: the secondary-scintillation gain, the extraction yield from the liquid to the gas phase and the Electron drift velocity.
B. K. Na - One of the best experts on this subject based on the ideXlab platform.
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Distinguishing surface and bulk Electron Charge carriers for ZnO powders
Journal of Molecular Catalysis A-chemical, 2000Co-Authors: A. B. Walters, B. K. Na, M.a VanniceAbstract:Abstract A two-Charge-carrier model that assumes coexisting high-mobility, low-concentration bulk, semiconduction Electron Charge carriers and low-mobility, variable-concentration surface-trapped-Electron Charge carriers is used to explain measured electrical and chemisorption properties of ZnO powders. This model resolves two serious quantitative issues not explained by the single-Charge-carrier-type model used for our previously reported studies. Not explainable using a single-Charge-carrier model are (1) wide variations in measured Electron mobility values due to variations in surface treatments and (2) calculated Electron number densities too low to match measured Electron-transfer chemisorption results. Our two-Charge-carrier model for ZnO powders assigns high-mobility bulk Electrons to n-type ZnO semiconduction and low-mobility surface Electrons to ( V o ) 2− and ( V o + ) − surface oxide ion Electron trapping vacancies. This model results in a high variation in surface Electron number density due to surface treatments, while the mobilities for both the bulk and surface Charge carriers remain constant. The model also calculates much higher surface Electron number densities that better match Charge-transfer chemisorption results. The two-Charge-carrier model is expected to have significant importance in explaining chemisorption and catalysis on ZnO and other similar powder oxides. In particular, the two-Charge-carrier model can yield two to three orders of magnitude higher calculated concentrations of surface Electrons than for the single-Charge-carrier model for any powder with coexisting high-mobility, semiconduction, bulk Charge carriers and variable concentrations of low-mobility, surface Charge carriers.
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Distinguishing surface and bulk Electron Charge carriers for ZnO powders
Journal of Molecular Catalysis A: Chemical, 2000Co-Authors: A. B. Walters, B. K. Na, C.-c. Liu, M.a VanniceAbstract:A two-Charge-carrier model that assumes coexisting high-mobility, low-concentration bulk, semiconduction Electron Charge carriers and low-mobility, variable-concentration surface-trapped-Electron Charge carriers is used to explain measured electrical and chemisorption properties of ZnO powders. This model resolves two serious quantitative issues not explained by the single-Charge-carrier-type model used for our previously reported studies. Not explainable using a single-Charge-carrier model are (1) wide variations in measured Electron mobility values due to variations in surface treatments and (2) calculated Electron number densities too low to match measured Electron-transfer chemisorption results. Our two-Charge-carrier model for ZnO powders assigns high-mobility bulk Electrons to n-type ZnO semiconduction and low-mobility surface Electrons to (V(o))2-and (V(o)/+)-surface oxide ion Electron trapping vacancies. This model results in a high variation in surface Electron number density due to surface treatments, while the mobilities for both the bulk and surface Charge carriers remain constant. The model also calculates much higher surface Electron number densities that better match Charge-transfer chemisorption results. The two-Charge-carrier model is expected to have significant importance in explaining chemisorption and catalysis on ZnO and other similar powder oxides. In particular, the two-Charge-carrier model can yield two to three orders of magnitude higher calculated concentrations of surface Electrons than for the single-Charge-carrier model for any powder with coexisting high-mobility, semiconduction, bulk Charge carriers and variable concentrations of low-mobility, surface Charge carriers. (C) 2000 Published by Elsevier Science B.V.