The Experts below are selected from a list of 6576 Experts worldwide ranked by ideXlab platform
Miro Zeman - One of the best experts on this subject based on the ideXlab platform.
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front and rear contact si solar cells combining high and low thermal budget si passivating contacts
Solar Energy Materials and Solar Cells, 2019Co-Authors: Gianluca Limodio, Guangtao Yang, Paul Procel, Y De Groot, Luana Mazzarella, Olindo Isabella, Miro ZemanAbstract:Abstract In this work we develop a rear emitter silicon solar cell integrating carrier-selective passivating contacts (CSPCs) with different thermal budget in the same device. The solar cell consists of a B-doped poly-Si/SiOx hole Collector and an i/n hydrogenated amorphous silicon (a-Si:H) stack acting as Electron Collector placed on the planar rear and textured front side, respectively. We investigate the passivation properties of both CSPCs on symmetric structures by optimizing the interdependency among annealing temperature, time and environment. The optimized B-doped poly-Si/SiOx reaches a saturation current density of ~10 fA/cm2 on n-type wafers and an implied open circuit voltage (iVOC) of 716 mV. Furthermore, the i/n a-Si:H stack shows an effective carrier lifetime above 4 ms and iVOC of ~705 mV for cell-relevant layers thickness. After a post-deposition annealing in H2, lifetime is above 10 ms and iVOC = 708 mV. Finally, we optimize the optoElectronic properties of indium-based transparent conductive oxide (Indium Tin Oxide ITO and hydrogenated indium oxide IO:H) to reduce parasitic absorption with a gain in short circuit current density of 0.23 mA/cm2. In conclusion, the optimized layer stacks are implemented at device level obtaining a device with VOC = 704 mV, fill factor of 73.8%, a short circuit current of 39.7 mA/cm2 and 21.0% aperture-area conversion efficiency.
Tsutomu Miyasaka - One of the best experts on this subject based on the ideXlab platform.
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amorphous metal oxide blocking layers for highly efficient low temperature brookite tio2 based perovskite solar cells
ACS Applied Materials & Interfaces, 2018Co-Authors: Atsushi Kogo, Yoshitaka Sanehira, Youhei Numata, Masashi Ikegami, Tsutomu MiyasakaAbstract:A fully low-temperature-processed perovskite solar cell was fabricated with an ultrathin amorphous TiOx hole-blocking layer in combination with brookite TiO2 prepared at temperature <150 °C. Structured with TiOx/brookite TiO2 bilayer Electron Collector, the perovskite solar cells exhibit high efficiency up to 21.6% being supported by high open-circuit voltage and fill factor up to 1.18 V and 0.83, respectively. Compared to SnOx hole-blocking layer, TiOx has better Electron band alignment with brookite TiO2 and hence, results in higher efficiency.
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a snox brookite tio2 bilayer Electron Collector for hysteresis less high efficiency plastic perovskite solar cells fabricated at low process temperature
Chemical Communications, 2016Co-Authors: Atsushi Kogo, Masashi Ikegami, Tsutomu MiyasakaAbstract:Thin plastic film-based CH3NH3PbI3−xClx perovskite solar cells were fabricated at low process temperature using a bilayer comprising an amorphous SnOx and mesoporous brookite TiO2 as Electron Collectors. Void-less high quality heterojunction structures achieve hysteresis-less photovoltaic performance with a power conversion efficiency as high as 13.4% and mechanical stability against cyclic bending.
Atsushi Kogo - One of the best experts on this subject based on the ideXlab platform.
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amorphous metal oxide blocking layers for highly efficient low temperature brookite tio2 based perovskite solar cells
ACS Applied Materials & Interfaces, 2018Co-Authors: Atsushi Kogo, Yoshitaka Sanehira, Youhei Numata, Masashi Ikegami, Tsutomu MiyasakaAbstract:A fully low-temperature-processed perovskite solar cell was fabricated with an ultrathin amorphous TiOx hole-blocking layer in combination with brookite TiO2 prepared at temperature <150 °C. Structured with TiOx/brookite TiO2 bilayer Electron Collector, the perovskite solar cells exhibit high efficiency up to 21.6% being supported by high open-circuit voltage and fill factor up to 1.18 V and 0.83, respectively. Compared to SnOx hole-blocking layer, TiOx has better Electron band alignment with brookite TiO2 and hence, results in higher efficiency.
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a snox brookite tio2 bilayer Electron Collector for hysteresis less high efficiency plastic perovskite solar cells fabricated at low process temperature
Chemical Communications, 2016Co-Authors: Atsushi Kogo, Masashi Ikegami, Tsutomu MiyasakaAbstract:Thin plastic film-based CH3NH3PbI3−xClx perovskite solar cells were fabricated at low process temperature using a bilayer comprising an amorphous SnOx and mesoporous brookite TiO2 as Electron Collectors. Void-less high quality heterojunction structures achieve hysteresis-less photovoltaic performance with a power conversion efficiency as high as 13.4% and mechanical stability against cyclic bending.
Gianluca Limodio - One of the best experts on this subject based on the ideXlab platform.
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front and rear contact si solar cells combining high and low thermal budget si passivating contacts
Solar Energy Materials and Solar Cells, 2019Co-Authors: Gianluca Limodio, Guangtao Yang, Paul Procel, Y De Groot, Luana Mazzarella, Olindo Isabella, Miro ZemanAbstract:Abstract In this work we develop a rear emitter silicon solar cell integrating carrier-selective passivating contacts (CSPCs) with different thermal budget in the same device. The solar cell consists of a B-doped poly-Si/SiOx hole Collector and an i/n hydrogenated amorphous silicon (a-Si:H) stack acting as Electron Collector placed on the planar rear and textured front side, respectively. We investigate the passivation properties of both CSPCs on symmetric structures by optimizing the interdependency among annealing temperature, time and environment. The optimized B-doped poly-Si/SiOx reaches a saturation current density of ~10 fA/cm2 on n-type wafers and an implied open circuit voltage (iVOC) of 716 mV. Furthermore, the i/n a-Si:H stack shows an effective carrier lifetime above 4 ms and iVOC of ~705 mV for cell-relevant layers thickness. After a post-deposition annealing in H2, lifetime is above 10 ms and iVOC = 708 mV. Finally, we optimize the optoElectronic properties of indium-based transparent conductive oxide (Indium Tin Oxide ITO and hydrogenated indium oxide IO:H) to reduce parasitic absorption with a gain in short circuit current density of 0.23 mA/cm2. In conclusion, the optimized layer stacks are implemented at device level obtaining a device with VOC = 704 mV, fill factor of 73.8%, a short circuit current of 39.7 mA/cm2 and 21.0% aperture-area conversion efficiency.
Paul Procel - One of the best experts on this subject based on the ideXlab platform.
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front and rear contact si solar cells combining high and low thermal budget si passivating contacts
Solar Energy Materials and Solar Cells, 2019Co-Authors: Gianluca Limodio, Guangtao Yang, Paul Procel, Y De Groot, Luana Mazzarella, Olindo Isabella, Miro ZemanAbstract:Abstract In this work we develop a rear emitter silicon solar cell integrating carrier-selective passivating contacts (CSPCs) with different thermal budget in the same device. The solar cell consists of a B-doped poly-Si/SiOx hole Collector and an i/n hydrogenated amorphous silicon (a-Si:H) stack acting as Electron Collector placed on the planar rear and textured front side, respectively. We investigate the passivation properties of both CSPCs on symmetric structures by optimizing the interdependency among annealing temperature, time and environment. The optimized B-doped poly-Si/SiOx reaches a saturation current density of ~10 fA/cm2 on n-type wafers and an implied open circuit voltage (iVOC) of 716 mV. Furthermore, the i/n a-Si:H stack shows an effective carrier lifetime above 4 ms and iVOC of ~705 mV for cell-relevant layers thickness. After a post-deposition annealing in H2, lifetime is above 10 ms and iVOC = 708 mV. Finally, we optimize the optoElectronic properties of indium-based transparent conductive oxide (Indium Tin Oxide ITO and hydrogenated indium oxide IO:H) to reduce parasitic absorption with a gain in short circuit current density of 0.23 mA/cm2. In conclusion, the optimized layer stacks are implemented at device level obtaining a device with VOC = 704 mV, fill factor of 73.8%, a short circuit current of 39.7 mA/cm2 and 21.0% aperture-area conversion efficiency.