The Experts below are selected from a list of 306 Experts worldwide ranked by ideXlab platform
Xiangang Xu - One of the best experts on this subject based on the ideXlab platform.
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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, 2016Co-Authors: Amirhossein Aminbeidokhti, Anil Kumar Hanumanthappa, Hamid Amini Moghadam, Daniel Haasmann, Jisheng Han, Sima Dimitrijev, Yan Shen, Xiangang XuAbstract:— The Mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the Electron Mobility in the 2-D Electron gas under the gate of AlGaN/GaN high-Electron-Mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the Electron Mobility relates to power HEMTs, and it was achieved by introducing a new method for the Mobility measurement. The gate-voltage independence of the Electron Mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT Mobility decreases with increased temperature according to the power law (T −k) and with a quite high value of the power-law coefficient (k = 2.45). Index Terms— 2-D Electron gas (2-DEG), AlGaN/GaN heterostructure, Electron Mobility, high-Electron-Mobility transistor (HEMT).
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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, 2016Co-Authors: Amirhossein Aminbeidokhti, Hamid Amini Moghadam, Daniel Haasmann, Sima Dimitrijev, Yan Shen, Anil Kumar Hanumanthappa, Xiangang XuAbstract:The Mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the Electron Mobility in the 2-D Electron gas under the gate of AlGaN/GaN high-Electron-Mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the Electron Mobility relates to power HEMTs, and it was achieved by introducing a new method for the Mobility measurement. The gate-voltage independence of the Electron Mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT Mobility decreases with increased temperature according to the power law (T-k) and with a quite high value of the power-law coefficient (k = 2.45).
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A method for extraction of Electron Mobility in power HEMTs
Superlattices and Microstructures, 2015Co-Authors: Amirhossein Aminbeidokhti, Hamid Amini Moghadam, Sima Dimitrijev, Xiangang Xu, Chengxin Wang, Shuang Qu, Philip Tanner, David Massoubre, Glenn M. WalkerAbstract:In this paper, a novel method for extraction of Electron Mobility in the two-dimensional Electron gas (2DEG) under the gate of power HEMTs is presented. Using this method enables the potential impact of the gate metal and the gate voltage on Electron Mobility in the 2DEG under the gate to be measured without the error due to the resistive regions outside the gate, which are the gate-to-source and gate-to-drain regions. The application of the new method was demonstrated by measurements on fabricated circular HEMTs.
Amirhossein Aminbeidokhti - One of the best experts on this subject based on the ideXlab platform.
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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, 2016Co-Authors: Amirhossein Aminbeidokhti, Anil Kumar Hanumanthappa, Hamid Amini Moghadam, Daniel Haasmann, Jisheng Han, Sima Dimitrijev, Yan Shen, Xiangang XuAbstract:— The Mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the Electron Mobility in the 2-D Electron gas under the gate of AlGaN/GaN high-Electron-Mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the Electron Mobility relates to power HEMTs, and it was achieved by introducing a new method for the Mobility measurement. The gate-voltage independence of the Electron Mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT Mobility decreases with increased temperature according to the power law (T −k) and with a quite high value of the power-law coefficient (k = 2.45). Index Terms— 2-D Electron gas (2-DEG), AlGaN/GaN heterostructure, Electron Mobility, high-Electron-Mobility transistor (HEMT).
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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, 2016Co-Authors: Amirhossein Aminbeidokhti, Hamid Amini Moghadam, Daniel Haasmann, Sima Dimitrijev, Yan Shen, Anil Kumar Hanumanthappa, Xiangang XuAbstract:The Mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the Electron Mobility in the 2-D Electron gas under the gate of AlGaN/GaN high-Electron-Mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the Electron Mobility relates to power HEMTs, and it was achieved by introducing a new method for the Mobility measurement. The gate-voltage independence of the Electron Mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT Mobility decreases with increased temperature according to the power law (T-k) and with a quite high value of the power-law coefficient (k = 2.45).
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A method for extraction of Electron Mobility in power HEMTs
Superlattices and Microstructures, 2015Co-Authors: Amirhossein Aminbeidokhti, Hamid Amini Moghadam, Sima Dimitrijev, Xiangang Xu, Chengxin Wang, Shuang Qu, Philip Tanner, David Massoubre, Glenn M. WalkerAbstract:In this paper, a novel method for extraction of Electron Mobility in the two-dimensional Electron gas (2DEG) under the gate of power HEMTs is presented. Using this method enables the potential impact of the gate metal and the gate voltage on Electron Mobility in the 2DEG under the gate to be measured without the error due to the resistive regions outside the gate, which are the gate-to-source and gate-to-drain regions. The application of the new method was demonstrated by measurements on fabricated circular HEMTs.
Sima Dimitrijev - One of the best experts on this subject based on the ideXlab platform.
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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, 2016Co-Authors: Amirhossein Aminbeidokhti, Anil Kumar Hanumanthappa, Hamid Amini Moghadam, Daniel Haasmann, Jisheng Han, Sima Dimitrijev, Yan Shen, Xiangang XuAbstract:— The Mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the Electron Mobility in the 2-D Electron gas under the gate of AlGaN/GaN high-Electron-Mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the Electron Mobility relates to power HEMTs, and it was achieved by introducing a new method for the Mobility measurement. The gate-voltage independence of the Electron Mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT Mobility decreases with increased temperature according to the power law (T −k) and with a quite high value of the power-law coefficient (k = 2.45). Index Terms— 2-D Electron gas (2-DEG), AlGaN/GaN heterostructure, Electron Mobility, high-Electron-Mobility transistor (HEMT).
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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, 2016Co-Authors: Amirhossein Aminbeidokhti, Hamid Amini Moghadam, Daniel Haasmann, Sima Dimitrijev, Yan Shen, Anil Kumar Hanumanthappa, Xiangang XuAbstract:The Mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the Electron Mobility in the 2-D Electron gas under the gate of AlGaN/GaN high-Electron-Mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the Electron Mobility relates to power HEMTs, and it was achieved by introducing a new method for the Mobility measurement. The gate-voltage independence of the Electron Mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT Mobility decreases with increased temperature according to the power law (T-k) and with a quite high value of the power-law coefficient (k = 2.45).
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A method for extraction of Electron Mobility in power HEMTs
Superlattices and Microstructures, 2015Co-Authors: Amirhossein Aminbeidokhti, Hamid Amini Moghadam, Sima Dimitrijev, Xiangang Xu, Chengxin Wang, Shuang Qu, Philip Tanner, David Massoubre, Glenn M. WalkerAbstract:In this paper, a novel method for extraction of Electron Mobility in the two-dimensional Electron gas (2DEG) under the gate of power HEMTs is presented. Using this method enables the potential impact of the gate metal and the gate voltage on Electron Mobility in the 2DEG under the gate to be measured without the error due to the resistive regions outside the gate, which are the gate-to-source and gate-to-drain regions. The application of the new method was demonstrated by measurements on fabricated circular HEMTs.
Hamid Amini Moghadam - One of the best experts on this subject based on the ideXlab platform.
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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, 2016Co-Authors: Amirhossein Aminbeidokhti, Anil Kumar Hanumanthappa, Hamid Amini Moghadam, Daniel Haasmann, Jisheng Han, Sima Dimitrijev, Yan Shen, Xiangang XuAbstract:— The Mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the Electron Mobility in the 2-D Electron gas under the gate of AlGaN/GaN high-Electron-Mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the Electron Mobility relates to power HEMTs, and it was achieved by introducing a new method for the Mobility measurement. The gate-voltage independence of the Electron Mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT Mobility decreases with increased temperature according to the power law (T −k) and with a quite high value of the power-law coefficient (k = 2.45). Index Terms— 2-D Electron gas (2-DEG), AlGaN/GaN heterostructure, Electron Mobility, high-Electron-Mobility transistor (HEMT).
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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, 2016Co-Authors: Amirhossein Aminbeidokhti, Hamid Amini Moghadam, Daniel Haasmann, Sima Dimitrijev, Yan Shen, Anil Kumar Hanumanthappa, Xiangang XuAbstract:The Mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the Electron Mobility in the 2-D Electron gas under the gate of AlGaN/GaN high-Electron-Mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the Electron Mobility relates to power HEMTs, and it was achieved by introducing a new method for the Mobility measurement. The gate-voltage independence of the Electron Mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT Mobility decreases with increased temperature according to the power law (T-k) and with a quite high value of the power-law coefficient (k = 2.45).
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A method for extraction of Electron Mobility in power HEMTs
Superlattices and Microstructures, 2015Co-Authors: Amirhossein Aminbeidokhti, Hamid Amini Moghadam, Sima Dimitrijev, Xiangang Xu, Chengxin Wang, Shuang Qu, Philip Tanner, David Massoubre, Glenn M. WalkerAbstract:In this paper, a novel method for extraction of Electron Mobility in the two-dimensional Electron gas (2DEG) under the gate of power HEMTs is presented. Using this method enables the potential impact of the gate metal and the gate voltage on Electron Mobility in the 2DEG under the gate to be measured without the error due to the resistive regions outside the gate, which are the gate-to-source and gate-to-drain regions. The application of the new method was demonstrated by measurements on fabricated circular HEMTs.
Daniel Haasmann - One of the best experts on this subject based on the ideXlab platform.
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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, 2016Co-Authors: Amirhossein Aminbeidokhti, Anil Kumar Hanumanthappa, Hamid Amini Moghadam, Daniel Haasmann, Jisheng Han, Sima Dimitrijev, Yan Shen, Xiangang XuAbstract:— The Mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the Electron Mobility in the 2-D Electron gas under the gate of AlGaN/GaN high-Electron-Mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the Electron Mobility relates to power HEMTs, and it was achieved by introducing a new method for the Mobility measurement. The gate-voltage independence of the Electron Mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT Mobility decreases with increased temperature according to the power law (T −k) and with a quite high value of the power-law coefficient (k = 2.45). Index Terms— 2-D Electron gas (2-DEG), AlGaN/GaN heterostructure, Electron Mobility, high-Electron-Mobility transistor (HEMT).
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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices, 2016Co-Authors: Amirhossein Aminbeidokhti, Hamid Amini Moghadam, Daniel Haasmann, Sima Dimitrijev, Yan Shen, Anil Kumar Hanumanthappa, Xiangang XuAbstract:The Mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the Electron Mobility in the 2-D Electron gas under the gate of AlGaN/GaN high-Electron-Mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the Electron Mobility relates to power HEMTs, and it was achieved by introducing a new method for the Mobility measurement. The gate-voltage independence of the Electron Mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT Mobility decreases with increased temperature according to the power law (T-k) and with a quite high value of the power-law coefficient (k = 2.45).
