The Experts below are selected from a list of 261 Experts worldwide ranked by ideXlab platform
Peter Hadley - One of the best experts on this subject based on the ideXlab platform.
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Single-Electron Tunneling devices
1998Co-Authors: Peter HadleyAbstract:Single-Electron Tunneling devices can detect charges much smaller than the charge of an Electron. This enables phenomenally precise charge measurements and it has been suggested that large scale integration of single-Electron devices could be used to construct logic circuits with a high device packing density. Here the operation of the two basic types of single-Electron Tunneling transistors is reviewed. The applications of single-Electron Tunneling in precision measurements and in general purpose computation is discussed. Particular attention is paid to the characteristics of single-Electron Tunneling transistors in the superconducting state.
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Broadband single‐Electron Tunneling transistor
Applied Physics Letters, 1996Co-Authors: E. H. Visscher, Peter Hadley, J. E. Mooij, J. Lindeman, S. M. Verbrugh, W. Van Der VleutenAbstract:A single‐Electron Tunneling transistor has been directly coupled on‐chip to a high Electron mobility transistor. The high Electron mobility transistor (HEMT) is used as an impedance matching circuit with a gain close to unity. The HEMT transformed the 1.4 MΩ output impedance of the single Electron Tunneling (SET) transistor by two orders of magnitude down to 5 kΩ, increasing its bandwidth to 50 kHz. This circuit makes it possible to observe the motion of individual Electrons at high frequencies. The requirements for the bandwidth in high frequency applications is discussed.
Clayton C. Williams - One of the best experts on this subject based on the ideXlab platform.
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Single-Electron Tunneling to insulator surfaces detected by electrostatic force
Applied Physics Letters, 2002Co-Authors: Levente Klein, Clayton C. WilliamsAbstract:The detection of single-Electron Tunneling events between a metallic scanning probe tip and an insulating surface is demonstrated by an electrostatic force method. When a voltage-biased oscillating atomic force microscopy tip is placed within Tunneling range of the surface of an insulator, single-Electron Tunneling events are observed between the tip and Electronic states at the surface. The events cause an abrupt reduction in cantilever oscillation amplitude, due to the instantaneous reduction of the force gradient at the tip. In most cases, only a single Electron tunnels to or from the surface. Experimental data show that no physical contact is made during the Tunneling events.
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Single Electron Tunneling detected by electrostatic force
Applied Physics Letters, 2001Co-Authors: Levente Klein, Clayton C. WilliamsAbstract:Single Electron Tunneling events between a specially fabricated scanning probe and a conducting surface are demonstrated. The probe is an oxidized silicon atomic force microscope tip with an electrically isolated metallic dot at its apex. A voltage applied to the silicon tip produces an electrostatic force on the probe, which depends upon the charge on the metallic dot. Single Electron Tunneling events are observed in both the electrostatic force amplitude and phase signal. Electrostatic modeling of the probe response to single Tunneling events is in good agreement with measured results.
Petr Král - One of the best experts on this subject based on the ideXlab platform.
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Nanoscale rotary motors driven by Electron Tunneling
Physical Review Letters, 2008Co-Authors: Boyang Wang, Lela Vuković, Petr KrálAbstract:We examine by semiclassical molecular dynamics simulations the possibility of driving nanoscale rotary motors by Electron Tunneling. The model systems studied have a carbon nanotube shaft with covalently attached "isolating" molecular stalks ending with "conducting" blades. Periodic charging and discharging of the blades at two metallic electrodes maintains an electric dipole on the blades that is rotated by an external electric field. Our simulations demonstrate that these molecular motors can be efficient under load and in the presence of noise and defects.
Takashi Taniguchi - One of the best experts on this subject based on the ideXlab platform.
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strong asymmetric charge carrier dependence in inelastic Electron Tunneling spectroscopy of graphene phonons
Physical Review Letters, 2015Co-Authors: Fabian D Natterer, Yue Zhao, Jonathan Wyrick, Yanghao Chan, Wenying Ruan, M Y Chou, K Watanabe, Takashi TaniguchiAbstract:Inelastic Electron Tunneling spectroscopy has mapped the phonon density of states in graphene.
Mark A. Reed - One of the best experts on this subject based on the ideXlab platform.
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Inelastic Electron Tunneling spectroscopy
Materials Today, 2008Co-Authors: Mark A. ReedAbstract:Inelastic Electron Tunneling Spectroscopy (IETS) has re-emerged as a premier analytical tool in the understanding of nanoscale and molecular junctions. This review discusses how IETS is used to study molecular transport junctions, and presents an overview of experimental results, the prospects that the technique offers and the challenges it faces.