The Experts below are selected from a list of 71268 Experts worldwide ranked by ideXlab platform
M.s.j. Hashmi - One of the best experts on this subject based on the ideXlab platform.
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Application of numerical analysis to the optimisation of Electronic Component reliability screening and assembly processes
Journal of Materials Processing Technology, 2004Co-Authors: Valerie Eveloy, P. Rodgers, M.s.j. HashmiAbstract:Abstract This study investigates the prediction of transient board-mounted Electronic Component heat transfer in environments representative of reliability screening and surface-mount assembly processes using computational fluid dynamics (CFD) analysis. The test cases are based on a board-mounted 160-lead Plastic Quad Flat Pack (PQFP) Component, analysed in still-air and a range of forced airflows. For reliability screening, three types of transient operating conditions are considered, namely (i) Component dynamic power dissipation in fixed ambient conditions, (ii) passive Component operation in dynamic ambient conditions, and (iii) combined Component dynamic power dissipation in varying ambient conditions. For surface-mount assembly, the test vehicle is exposed to a typical solder reflow thermal profile. Benchmark criteria are based on Component junction temperature and Component-printed circuit board (PCB) surface temperature, measured using thermal test dies and infrared thermography, respectively. Component/PCB numerical modelling is based on nominal geometry dimensions and material properties. Overall, Component transient thermal behaviour is found to be accurately predicted, suggesting that CFD analysis could play an important role in providing critical boundary conditions to determine accelerated life testing parameters and optimise new assembly processes.
E. B. Shadrin - One of the best experts on this subject based on the ideXlab platform.
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Nature of the Electronic Component of the thermal phase transition in VO2 films
Semiconductors, 2012Co-Authors: A. V. Ilinskiy, O. E. Kvashenkina, E. B. ShadrinAbstract:By the construction of a full grid of minor hysteresis loops and the step heating and cooling of vanadium dioxide films, it was found that the thermal semiconductor-metal phase transition in vanadium dioxide is a multistage process. It is shown that the transition consists of two inherently different transitions, i.e., Electronic and structural ones. Both transitions occur simultaneously and trigger each other in a wide temperature range. More specifically, a continuous Electronic transition occurs in the range 0–140°C; in the range 20–80°C, a series of discontinuous structural phase transformations occurs in film nanocrystallites at various fixed temperatures. The temperatures of the structural transformations are related to nanocrystallite sizes. An essentially new form of the elementary hysteresis loop of an individual nanocrystallite is constructed. The properties of minor hysteresis loops of the VO2 film’s reflectance are analyzed; based on these results, the Electronic Component of the semiconductor-metal phase transition is identified and studied.
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Nature of the Electronic Component of the thermal phase transition in VO_2 films
Semiconductors, 2012Co-Authors: A. V. Ilinskiy, O. E. Kvashenkina, E. B. ShadrinAbstract:By the construction of a full grid of minor hysteresis loops and the step heating and cooling of vanadium dioxide films, it was found that the thermal semiconductor-metal phase transition in vanadium dioxide is a multistage process. It is shown that the transition consists of two inherently different transitions, i.e., Electronic and structural ones. Both transitions occur simultaneously and trigger each other in a wide temperature range. More specifically, a continuous Electronic transition occurs in the range 0–140°C; in the range 20–80°C, a series of discontinuous structural phase transformations occurs in film nanocrystallites at various fixed temperatures. The temperatures of the structural transformations are related to nanocrystallite sizes. An essentially new form of the elementary hysteresis loop of an individual nanocrystallite is constructed. The properties of minor hysteresis loops of the VO_2 film’s reflectance are analyzed; based on these results, the Electronic Component of the semiconductor-metal phase transition is identified and studied.
Toshiki Furutani - One of the best experts on this subject based on the ideXlab platform.
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printed circuit board method for manufacturing printed circuit board and Electronic Component
2013Co-Authors: Kazuhiro Yoshikawa, Liyi Chen, Toshiki FurutaniAbstract:A printed wiring board includes a core substrate having opening, an Electronic Component device accommodated in the opening of the substrate and including inductor and passive Components, a wiring structure connecting the inductor and passive Components in the Electronic device, a filler resin body filling space formed between the substrate and Electronic device in the opening of the substrate, a first buildup layer including a first interlayer insulation layer on first surface of the substrate, a first conductive layer on the first insulation layer, and a first via conductor in the first insulation layer, and a second buildup layer including a second interlayer insulation layer on second surface of the substrate on the opposite side of the first surface of the substrate, a second conductive layer on the second insulation layer, and a second via conductor in the second insulation layer.
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wiring board with built in Electronic Component and method for manufacturing the same
2013Co-Authors: Shunsuke Sakai, Kenji Sato, Toshiki FurutaniAbstract:A wiring board with a built-in Electronic Component includes a core substrate having a penetrating hole formed in the core substrate, an Electronic Component accommodated in the penetrating hole in the core substrate, a conductive pattern layer formed on a first surface of the core substrate and including a first conductive pattern and a second conductive pattern, and an interlayer insulation layer formed over the conductive pattern layer and the first surface of the core substrate. The second conductive pattern is formed adjacent to a periphery of the penetrating hole and contoured such that a sheet for positioning the Electronic Component in the penetrating hole is laminated horizontally with respect to the first surface of the core substrate over the penetrating hole.
Valerie Eveloy - One of the best experts on this subject based on the ideXlab platform.
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Application of numerical analysis to the optimisation of Electronic Component reliability screening and assembly processes
Journal of Materials Processing Technology, 2004Co-Authors: Valerie Eveloy, P. Rodgers, M.s.j. HashmiAbstract:Abstract This study investigates the prediction of transient board-mounted Electronic Component heat transfer in environments representative of reliability screening and surface-mount assembly processes using computational fluid dynamics (CFD) analysis. The test cases are based on a board-mounted 160-lead Plastic Quad Flat Pack (PQFP) Component, analysed in still-air and a range of forced airflows. For reliability screening, three types of transient operating conditions are considered, namely (i) Component dynamic power dissipation in fixed ambient conditions, (ii) passive Component operation in dynamic ambient conditions, and (iii) combined Component dynamic power dissipation in varying ambient conditions. For surface-mount assembly, the test vehicle is exposed to a typical solder reflow thermal profile. Benchmark criteria are based on Component junction temperature and Component-printed circuit board (PCB) surface temperature, measured using thermal test dies and infrared thermography, respectively. Component/PCB numerical modelling is based on nominal geometry dimensions and material properties. Overall, Component transient thermal behaviour is found to be accurately predicted, suggesting that CFD analysis could play an important role in providing critical boundary conditions to determine accelerated life testing parameters and optimise new assembly processes.
A. V. Ilinskiy - One of the best experts on this subject based on the ideXlab platform.
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Nature of the Electronic Component of the thermal phase transition in VO2 films
Semiconductors, 2012Co-Authors: A. V. Ilinskiy, O. E. Kvashenkina, E. B. ShadrinAbstract:By the construction of a full grid of minor hysteresis loops and the step heating and cooling of vanadium dioxide films, it was found that the thermal semiconductor-metal phase transition in vanadium dioxide is a multistage process. It is shown that the transition consists of two inherently different transitions, i.e., Electronic and structural ones. Both transitions occur simultaneously and trigger each other in a wide temperature range. More specifically, a continuous Electronic transition occurs in the range 0–140°C; in the range 20–80°C, a series of discontinuous structural phase transformations occurs in film nanocrystallites at various fixed temperatures. The temperatures of the structural transformations are related to nanocrystallite sizes. An essentially new form of the elementary hysteresis loop of an individual nanocrystallite is constructed. The properties of minor hysteresis loops of the VO2 film’s reflectance are analyzed; based on these results, the Electronic Component of the semiconductor-metal phase transition is identified and studied.
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Nature of the Electronic Component of the thermal phase transition in VO_2 films
Semiconductors, 2012Co-Authors: A. V. Ilinskiy, O. E. Kvashenkina, E. B. ShadrinAbstract:By the construction of a full grid of minor hysteresis loops and the step heating and cooling of vanadium dioxide films, it was found that the thermal semiconductor-metal phase transition in vanadium dioxide is a multistage process. It is shown that the transition consists of two inherently different transitions, i.e., Electronic and structural ones. Both transitions occur simultaneously and trigger each other in a wide temperature range. More specifically, a continuous Electronic transition occurs in the range 0–140°C; in the range 20–80°C, a series of discontinuous structural phase transformations occurs in film nanocrystallites at various fixed temperatures. The temperatures of the structural transformations are related to nanocrystallite sizes. An essentially new form of the elementary hysteresis loop of an individual nanocrystallite is constructed. The properties of minor hysteresis loops of the VO_2 film’s reflectance are analyzed; based on these results, the Electronic Component of the semiconductor-metal phase transition is identified and studied.