The Experts below are selected from a list of 15159 Experts worldwide ranked by ideXlab platform
Mark A. Olson - One of the best experts on this subject based on the ideXlab platform.
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Shuttling in the solid state
Nature Chemistry, 2015Co-Authors: Mark A. OlsonAbstract:Incorporating mechanically interlocked molecular shuttles within a metal–organic framework that has enough free space in the crystal lattice to permit volume-conserving translational motion sets the stage for defect-free molecular-Electronic Device Fabrication and more.
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Metal–organic frameworks: Shuttling in the solid state
Nature chemistry, 2015Co-Authors: Mark A. OlsonAbstract:Incorporating mechanically interlocked molecular shuttles within a metal–organic framework that has enough free space in the crystal lattice to permit volume-conserving translational motion sets the stage for defect-free molecular-Electronic Device Fabrication and more.
Kun-hong Lee - One of the best experts on this subject based on the ideXlab platform.
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Fabrication of carbon nanotube emitters in an anodic aluminium oxide nanotemplate on a Si wafer by multi-step anodization
Nanotechnology, 2005Co-Authors: Sun-kyu Hwang, Jung-hyun Lee, Soo-hwan Jeong, Pyung-soo Lee, Kun-hong LeeAbstract:AAO template technology was combined with silicon technology to be directly applied to Electronic Device Fabrication. Thin film anodic aluminium oxide (AAO) templates were fabricated on a silicon wafer by multiple anodizations. No electropolishing was used after the deposition of the aluminium layer on Si wafers. The ordering of the pore arrangement was improved by repeated anodizations, and highly ordered AAO templates could be obtained on Si wafers. CNT field emitter arrays were made with the AAO templates on Si wafers. Field emission measurement revealed that the emission current density increased with the synthesis temperature of CNTs. The large field enhancement factor in the range of 2440–4000 indicates the potential of the CNT field emitter array based on the AAO template on a Si wafer.
Narayan Pradhan - One of the best experts on this subject based on the ideXlab platform.
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Facets Directed Connecting Perovskite Nanocrystals.
Journal of the American Chemical Society, 2020Co-Authors: Biswajit Hudait, Sumit Dutta, Avijit Patra, Diptam Nasipuri, Narayan PradhanAbstract:Connecting nanocrystals with removal of interface ligand barriers is one of the key steps for efficient carrier transportation in opto-Electronic Device Fabrication. Typically, ion migration for cr...
M C Mccarthy - One of the best experts on this subject based on the ideXlab platform.
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detection of two highly stable silicon nitrides hsinsi and h3sinsi
Journal of Physical Chemistry A, 2013Co-Authors: Kyle N Crabtree, Oscar Martinez, M C MccarthyAbstract:The formation mechanisms of silicon nitride and silicon nitrogen hydrogen films, both produced by chemical vapor deposition (CVD) techniques and widely used in Electronic Device Fabrication, are poorly understood. Identification of gas-phase intermediates formed from starting materials, typically silane, ammonia, and/or nitrogen, is a critical step in assessing the interplay between gas and surface processes in film formation. Two potential intermediates in this process, HSiNSi and H3SiNSi, have now been detected in a molecular beam by means of rotational spectroscopy. Both molecules were produced in electrical discharges of CVD-like gas mixtures and are the most readily observed silicon–nitrogen-containing molecules in the 6–20 GHz frequency range, though neither has been the subject of prior experimental or theoretical studies. HSiNSi and H3SiNSi are likely formed from reactions involving the silanitrile radical (SiN, isoElectronic to CN), implying that similar gas-phase reactions may be involved in fil...
Qinghua Zhang - One of the best experts on this subject based on the ideXlab platform.
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Insulating SiO2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication.
Nano letters, 2020Co-Authors: Hui Guo, Xueyan Wang, Li Huang, Xin Jin, Zhenzhong Yang, Zhang Zhou, Yu-yang Zhang, Qinghua ZhangAbstract:Graphene on SiO2 enables Fabrication of Si-technology-compatible Devices, but a transfer of these Devices from other substrates and direct growth have severe limitations due to a relatively small grain size or Device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for Electronic Devices, on an insulating SiO2 film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO2 film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (∼1 nm) crystalline or thicker (∼2 nm) amorphous SiO2 has been produced. The insulating nature of the thick amorphous SiO2 is verified by transport measurements. The Device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within in situ fabricated Hall bar Devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in Electronics.