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Eun Ha Choi - One of the best experts on this subject based on the ideXlab platform.
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Discharge Characteristics of MgO Nano-Powdered Functional Layer in AC-PDP
Molecular Crystals and Liquid Crystals, 2010Co-Authors: Eun Ha Choi, Byuong Joo ParkAbstract:We have studied discharge characteristics of MgO nano-powdered functional layer in accordance with their particle sizes in AC-PDP. The MgO nano-powder's size was controlled and confirmed that the different particle sizes were distributed according to the sintering times throughout the particle size analyzer (PSA) measurement. We made the different 6 inch test panels, in which the different particle size's functional layers were applied, for measurements of the firing voltage, secondary electron Emission Coefficient and cathodoluminescence (CL) spectrum. It is shown that the functional layer makes the firing voltage and sustain voltage low, and the particles with large size have the lowest firing voltage and sustain voltage, which are related to the high secondary electron Emission Coefficient.
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Correlation between the Secondary Electron Emission Coefficient of MgO Protective Layer and Luminous Efficiency in Alternating Current Plasma Display Panel (AC-PDP)
Molecular Crystals and Liquid Crystals, 2009Co-Authors: Chang Gil Son, Guangsup Cho, Young Gyu Han, Yoon Ki Kim, In Tae Kim, Eun Ha ChoiAbstract:We have investigated the correlation between the secondary electron Emission Coefficient (γ) of MgO protective layer and discharge luminous efficiency in alternating current plasma display panel (AC-PDP) by varying the O2 flowing rates of 0, 10, 20, and 30 sccm. It is found that the secondary electron Emission Coefficient and the brightness are maximum, and the discharge voltage is minimum at the O2 flowing rate of 20 sccm. As a result, the discharge luminous efficiency is the highest at the O2 flowing rate of 20 sccm in comparison with others.
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excited xenon density and ion induced secondary electron Emission Coefficient for vacuum ultraviolet luminous efficiency in alternating current plasma display panel
Thin Solid Films, 2008Co-Authors: Eun Ha Choi, Jae Won Cho, Byoung Hee Hong, Yoonho Seo, Yunki Kim, Byoung Joo Park, Guangsup ChoAbstract:Abstract It is shown for Xe content ratio of 10% that the excited xenon atom density for the 1s 5 metastable state is 3.0 × 10 12 cm − 3 with a gap distance of 50 μm under a fixed gas pressure of 5.3 × 10 4 Pa in alternating current plasma display panels. It is observed that the VUV Emission of 173 nm continues after its peak and lasts much longer than 147 nm Emission. We also found that the time of VUV peak Emission intensity for higher xenon mole fraction is longer. It is also concluded that the luminous efficiency is strongly dependent on the ion-induced secondary electron Emission Coefficient.
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Correlation between the secondary electron Emission Coefficient of MgO protective layer and luminous efficiency in Alternating Current Plasma Display Panel (AC- PDP)
2007 IEEE 34th International Conference on Plasma Science (ICOPS), 2007Co-Authors: Eun Young Park, Seung Jun Jung, Ki Baek Song, Min Wook Moon, Phil Yong Oh, Byoung Hee Hong, Eun Ha ChoiAbstract:Summary form only given. We have investigated the correlation between the secondary electron Emission Coefficient (gamma) of MgO protective layer and discharge luminous efficiency in alternating current plasma display panel (AC-PDP). We have fabricated the 4 inch PDP test panels with ITO gap distance of 60 mum, in which each PDP panel has respective their own secondary electron Emission Coefficient with Ne-Xe (15%) gas mixture. The MgO protective layer in PDP test panels has been deposited to be 7000 Aring by electron beam evaporation. Oxygen (O2) flowing rate has been changed for an each test panel during the MgO deposition. The secondary electron Emission Coefficient of MgO protective layers has been investigated by gamma-focused ion beam system (gamma-FIB) according to the respective O2 flowing rate. It is found that the secondary electron Emission Coefficient of MgO protective layer and discharge luminous efficiency are in strong correlation in this experiment.
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characteristics of secondary electron Emission Coefficient and sputtering yield for mgal2o4 mgo protective layer in ac plasma display panels
Japanese Journal of Applied Physics, 2006Co-Authors: Jinman Jeoung, Seung Oun Kang, Hyejung Lee, Yongwhan Jung, Kangwon Jung, Eun Ha ChoiAbstract:The secondary electron Emission Coefficient (γ) and sputtering yield of the MgAl2O4/MgO protective layer has been investigated using γ-focused ion beam (γ-FIB) and focused ion beam (FIB) systems, respectively. The MgAl2O4/MgO protective layer has higher γ values (from 0.09 to 0.12) than the single MgAl2O4 protective layer (from 0.06 to 0.07) at Ne+ ion energies ranging from 90 to 200 eV. Also it has been found that the secondary electron Emission Coefficient (γ) of the MgAl2O4/MgO protective layer is similar to that of the MgO protective layer. Moreover, the MgAl2O4/MgO protective layer has been found to have lower sputtering yields (from 0.25 to 0.35) than the MgO protective layer (from 0.36 to 0.44) for Ga+ ion energies ranging from 10 to 14 keV.
Guangsup Cho - One of the best experts on this subject based on the ideXlab platform.
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Correlation between the Secondary Electron Emission Coefficient of MgO Protective Layer and Luminous Efficiency in Alternating Current Plasma Display Panel (AC-PDP)
Molecular Crystals and Liquid Crystals, 2009Co-Authors: Chang Gil Son, Guangsup Cho, Young Gyu Han, Yoon Ki Kim, In Tae Kim, Eun Ha ChoiAbstract:We have investigated the correlation between the secondary electron Emission Coefficient (γ) of MgO protective layer and discharge luminous efficiency in alternating current plasma display panel (AC-PDP) by varying the O2 flowing rates of 0, 10, 20, and 30 sccm. It is found that the secondary electron Emission Coefficient and the brightness are maximum, and the discharge voltage is minimum at the O2 flowing rate of 20 sccm. As a result, the discharge luminous efficiency is the highest at the O2 flowing rate of 20 sccm in comparison with others.
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excited xenon density and ion induced secondary electron Emission Coefficient for vacuum ultraviolet luminous efficiency in alternating current plasma display panel
Thin Solid Films, 2008Co-Authors: Eun Ha Choi, Jae Won Cho, Byoung Hee Hong, Yoonho Seo, Yunki Kim, Byoung Joo Park, Guangsup ChoAbstract:Abstract It is shown for Xe content ratio of 10% that the excited xenon atom density for the 1s 5 metastable state is 3.0 × 10 12 cm − 3 with a gap distance of 50 μm under a fixed gas pressure of 5.3 × 10 4 Pa in alternating current plasma display panels. It is observed that the VUV Emission of 173 nm continues after its peak and lasts much longer than 147 nm Emission. We also found that the time of VUV peak Emission intensity for higher xenon mole fraction is longer. It is also concluded that the luminous efficiency is strongly dependent on the ion-induced secondary electron Emission Coefficient.
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Work function of MgO single crystals from ion-induced secondary electron Emission Coefficient
Journal of Applied Physics, 2003Co-Authors: Jae Yong Lim, Jae Won Cho, Seung Oun Kang, Guangsup Cho, Han Sup Uhm, Eun Ha ChoiAbstract:The work functions φω of MgO single crystals with its respective orientation (111), (200), and (220) have been investigated from their ion-induced secondary electron Emission Coefficient γ, respectively, using various ions with different ionization energies in a γ-focused ion beam system. The work function φω for MgO single crystal with (111) orientation has the lowest value, 4.22 eV, whereas it is 4.94 eV for (200) and the highest value is 5.07 eV for (220). These work functions of MgO single crystals can explain the nonzero values of the ion-induced secondary electron Emission Coefficient γ for Xe+ ions, whose ionization energy is 12.13 eV.
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influence of vacuum annealing process on the secondary electron Emission Coefficient γ from a mgo protective layer
Japanese Journal of Applied Physics, 2001Co-Authors: Jinman Jeoung, Jae Yong Lim, Guangsup Cho, Young-guon Kim, Yoonho Seo, Eun Ha ChoiAbstract:The secondary electron Emission Coefficient (γ) of vacuum-annealed MgO films has been investigated using a γ-focused ion beam (γ-FIB) system. The vacuum-annealed MgO films have been found to have higher γ values from 0.05 to 0.12 than those from 0.03 to 0.06 for as-deposited MgO films for operating Ne+ ions whose acceleration voltages ranged from 50 V to 200 V. It is shown that the γ for the as-deposited MgO protective layer is significantly decreased by the influence of holding in air since the hydroxyl OH groups are absorbed onto the MgO surface from the atmospheric air. It is also observed that the secondary electron Emission Coefficient γ for the vacuum-annealed MgO protective layer is less influenced by holding in air than that for the as-deposited MgO protective layer. Based on these findings, it is concluded that the vacuum-annealed MgO protective layer plays an important role in lowering the firing voltage in alternating current-plasma display panel (AC-PDP) compared with the as-deposited MgO protective layer or the as-deposited MgO protective layer held in air.
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Ion-Induced Secondary Electron Emission Coefficient(γ)of Bulk-MgO Single Crystals
Japanese Journal of Applied Physics, 2000Co-Authors: Daeil Kim, Jae Yong Lim, Guangsup Cho, Young-guon Kim, Choon-woo Lee, Eun Ha ChoiAbstract:The ion induced secondary electron Emission Coefficient ? of bulk-MgO single crystal has been measured by the ?-focused ion beam system. It is found that the bulk-MgO single crystal with (111) orientation has the highest ? from 0.08 up to 0.21, and the ? values are in the order of the crystallinities, (111) > (200) > (220) for operating Ne+ ions ranging from 50 eV to 300 eV in this experiment. These results are consistent with our previous reports for MgO protective layers with respective orientations of (111), (200), and (220).
A Gleizes - One of the best experts on this subject based on the ideXlab platform.
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Net Emission Coefficient for CO–H2 thermal plasmas with the consideration of molecular systems
Journal of Quantitative Spectroscopy and Radiative Transfer, 2015Co-Authors: T. Billoux, Yann Cressault, A GleizesAbstract:This paper deals with the calculation of net Emission Coefficients (NECs) for CO–H2 thermal plasmas. This task required the elaboration of a complete spectroscopic database including atoms and molecules formed by carbon, oxygen and hydrogen elements. We have used a systematic line by line method to calculate all the main radiative contributions which are the atomic and molecular continua, the atomic lines and the molecular (diatomic and polyatomic) lines. The main diatomic electronic systems for CO–H2 plasmas and the triatomic molecular bands were considered. We present some variations of the net Emission Coefficient versus temperature, for various pressures and for two relative proportions of the components. The role of the diatomic molecules is important at temperatures lower than 5000 K whereas the net Emission Coefficient presents an unusual peak at temperature around 1000 K, due to the presence of the CO2 molecule presenting a strong infrared radiation. Finally, the results show that the NEC slightly depends on the relative proportion of CO and H2.
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net Emission Coefficient of co2 cu thermal plasmas role of copper and molecules
Journal of Physics: Conference Series, 2012Co-Authors: T. Billoux, Yann Cressault, V Boretskij, A Veklich, A GleizesAbstract:The present work was conducted to calculate the radiative transfer in CO2–Cu mixtures at atmospheric pressure. The plasma is supposed to be in local thermodynamic equilibrium (LTE) for temperatures between 500 and 30000 K. In the first part of the work, we briefly present the plasma composition. The second part is devoted to the various mechanisms responsible for the radiation (atomic continuum, molecular continuum, atomic lines and molecular bands). A particular attention is paid to the radiation of molecular bands. These radiative properties are then introduced in the net Emission Coefficient (NEC) which is used to estimate the radiation in an isothermal and homogeneous medium. Finally, some results are proposed for various concentrations of copper and different plasma sizes. For optically thin plasmas, the radiation of molecular bands and metallic vapors strongly increase the NEC at low temperature. For higher plasma sizes, the copper lines do not only have high intensities but are also strongly self-absorbed contrarily to the radiation of the molecular bands which becomes the major part, indicating that we must not neglect their contribution in the total radiation.
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calculation of the net Emission Coefficient of an air thermal plasma at very high pressure
Journal of Physics: Conference Series, 2012Co-Authors: T. Billoux, Yann Cressault, Ph Teulet, A GleizesAbstract:The aim of this paper is to present an accurate evaluation of the phenomena appearing for high pressure air plasmas supposed to be in local thermodynamic equilibrium (LTE). In the past, we already calculated the net Emission Coefficient for air mixtures at atmospheric pressure and for temperatures up to 30kK (molecular contribution being restricted to 10kK). Unfortunately, the existence of high pressures does not allow us to use this database due to the non-ideality of the plasma (Viriel and Debye corrections, energy cut-off ...), and due to the significant shifts of molecular reactions towards upper temperatures. Consequently, this paper proposes an improvement of our previous works with a consideration of high pressure corrections in the composition algorithm in order to take into account the pressure effects, and with a new calculation of all the contributions of the plasma radiation (atomic lines and continuum, molecular continuum, and molecular bands) using an updated database. A particular attention is paid to calculate the contribution of all the major molecular band systems to the radiation: O2 (Schumann–Runge), N2 (VUV, 1st and 2nd positive), NO (IR, β, γ, δ, ) and N2+ (1st negative and Meinel). The discrete atomic lines and molecular bands radiation including the overlapping are calculated by a line-by-line method up to 30kK and 100 bar. This updated database is validated in the case of optically thin plasmas and pressure of 1bar by the comparison of our integrated Emission strength with the published results. Finally, this work shows the necessity to extend the molecular radiation database up to 15kK at high pressure (bands and continuum) since their corresponding contributions could not be neglected at high temperature.
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net Emission Coefficient of air thermal plasmas
Journal of Physics D, 2002Co-Authors: Y Naghizadehkashani, Yann Cressault, A GleizesAbstract:We have calculated the net Emission Coefficient of air plasmas at atmospheric pressure in the temperature range between 300 and 40?000?K, in the assumption of local thermodynamic equilibrium and isothermal plasmas. This calculation takes into account the radiation due to the atomic continuum, the molecular continuum, the molecular bands (several systems for O2, N2, NO and N2+) and the atomic lines. Special attention has been devoted in this paper to the description of the molecular bands radiation. The results show that in the high temperature range where molecules are dissociated, the radiation properties of air plasmas are mainly due to those of nitrogen plasmas, the resonance atomic lines playing an important role in spite of their strong self-absorption. At low temperature (T<6000?K) the role of the molecular bands of oxygen (O2) and NO is predominant.
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Net Emission Coefficient of air thermal plasmas
Journal of Physics D: Applied Physics, 2002Co-Authors: Y Naghizadeh-kashani, Yann Cressault, A GleizesAbstract:We have calculated the net Emission Coefficient of air plasmas at atmospheric pressure in the temperature range between 300 and 40?000?K, in the assumption of local thermodynamic equilibrium and isothermal plasmas. This calculation takes into account the radiation due to the atomic continuum, the molecular continuum, the molecular bands (several systems for O2, N2, NO and N2+) and the atomic lines. Special attention has been devoted in this paper to the description of the molecular bands radiation. The results show that in the high temperature range where molecules are dissociated, the radiation properties of air plasmas are mainly due to those of nitrogen plasmas, the resonance atomic lines playing an important role in spite of their strong self-absorption. At low temperature (T
Jae Yong Lim - One of the best experts on this subject based on the ideXlab platform.
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Work function of MgO single crystals from ion-induced secondary electron Emission Coefficient
Journal of Applied Physics, 2003Co-Authors: Jae Yong Lim, Jae Won Cho, Seung Oun Kang, Guangsup Cho, Han Sup Uhm, Eun Ha ChoiAbstract:The work functions φω of MgO single crystals with its respective orientation (111), (200), and (220) have been investigated from their ion-induced secondary electron Emission Coefficient γ, respectively, using various ions with different ionization energies in a γ-focused ion beam system. The work function φω for MgO single crystal with (111) orientation has the lowest value, 4.22 eV, whereas it is 4.94 eV for (200) and the highest value is 5.07 eV for (220). These work functions of MgO single crystals can explain the nonzero values of the ion-induced secondary electron Emission Coefficient γ for Xe+ ions, whose ionization energy is 12.13 eV.
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influence of vacuum annealing process on the secondary electron Emission Coefficient γ from a mgo protective layer
Japanese Journal of Applied Physics, 2001Co-Authors: Jinman Jeoung, Jae Yong Lim, Guangsup Cho, Young-guon Kim, Yoonho Seo, Eun Ha ChoiAbstract:The secondary electron Emission Coefficient (γ) of vacuum-annealed MgO films has been investigated using a γ-focused ion beam (γ-FIB) system. The vacuum-annealed MgO films have been found to have higher γ values from 0.05 to 0.12 than those from 0.03 to 0.06 for as-deposited MgO films for operating Ne+ ions whose acceleration voltages ranged from 50 V to 200 V. It is shown that the γ for the as-deposited MgO protective layer is significantly decreased by the influence of holding in air since the hydroxyl OH groups are absorbed onto the MgO surface from the atmospheric air. It is also observed that the secondary electron Emission Coefficient γ for the vacuum-annealed MgO protective layer is less influenced by holding in air than that for the as-deposited MgO protective layer. Based on these findings, it is concluded that the vacuum-annealed MgO protective layer plays an important role in lowering the firing voltage in alternating current-plasma display panel (AC-PDP) compared with the as-deposited MgO protective layer or the as-deposited MgO protective layer held in air.
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Ion-Induced Secondary Electron Emission Coefficient(γ)of Bulk-MgO Single Crystals
Japanese Journal of Applied Physics, 2000Co-Authors: Daeil Kim, Jae Yong Lim, Guangsup Cho, Young-guon Kim, Choon-woo Lee, Eun Ha ChoiAbstract:The ion induced secondary electron Emission Coefficient ? of bulk-MgO single crystal has been measured by the ?-focused ion beam system. It is found that the bulk-MgO single crystal with (111) orientation has the highest ? from 0.08 up to 0.21, and the ? values are in the order of the crystallinities, (111) > (200) > (220) for operating Ne+ ions ranging from 50 eV to 300 eV in this experiment. These results are consistent with our previous reports for MgO protective layers with respective orientations of (111), (200), and (220).
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Secondary electron Emission Coefficient of a MgO single crystal
Journal of Applied Physics, 1999Co-Authors: Eun Ha Choi, Jae Yong Lim, Young-guon Kim, Daeil Kim, Choon-woo Lee, Guangsup ChoAbstract:The secondary electron Emission Coefficient γ of different MgO single crystal has been measured by γ-focused ion beam system. It is found that the MgO single crystal with (111) orientation has the highest γ from 0.08 up to 0.21, while from 0.06 to 0.19 for (200) and from 0.05 to 0.15 for (220) orientation for operating Ne+ ions ranging from 50 to 300 eV throughout this experiment. It is also found that these observations can be explained by work functions, which are dependent on the crystal orientations of MgO.
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measurement of secondary electron Emission Coefficient γ of mgo protective layer with various crystallinities
Japanese Journal of Applied Physics, 1998Co-Authors: Eun Ha Choi, Jae Yong Lim, Guangsup Cho, Young-guon Kim, Daeil Kim, Jingoo Kim, Seung Oun KangAbstract:The secondary electron Emission Coefficient γ of a MgO protective layer with various crystallinities has been successfully measured by the γ-focused ion beam system with complete elimination of the charge accumulation problem by scanning-area adjustment techniques. It is found that the (111) surface has the highest γ from 0.14 to 0.26 in comparison with the other films with (200) and (220) crystallinities for operating Ne+ ions, while ranged from 0.03 to 0.24 for Ar+ ions, under operating ion energies from 50 eV to 500 eV throughout this experiment. These observations explain why the (111) crystallinity of the MgO protective layer plays an important role in lowering the firing voltages in AC plasma display panel compared to the films with other crystallinities.
A Von Keudell - One of the best experts on this subject based on the ideXlab platform.
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secondary electron Emission Coefficient of c h and si c thin films and some relations to their morphology and composition
Diamond and Related Materials, 1996Co-Authors: S Groudevazotova, W Jacob, A Von KeudellAbstract:A complex investigation of the secondary electron Emission Coefficient (SEEC) of two types of carbon containing thin film materials, which are among potential candidates for anti-multi-pactoring (AMP) coatings in high frequency devices, such as HF waveguides used for plasma heating in fusion experiments, has been performed. Relations between the dependencies of the SEEC on the energy E and the angle of incidence of the primary electron beam ϑ and other thin film characteristics such as morphology, composition and thermal stability have been established. As a result, the conditions for plasma enhanced chemical vapor deposition of thermally stable C:H films with a SEEC<1 were determined. In addition, it was found that the Si:C films obtained by d.c. magnetron co-sputtering have, for all investigated energies E and angles ϑ, before and after annealing, a SEEC very close to unity and are interesting new candidates for AMP-coatings.