The Experts below are selected from a list of 318 Experts worldwide ranked by ideXlab platform
Jacky Even - One of the best experts on this subject based on the ideXlab platform.
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ab initio calculation of effective Work Functions for a tin hfo2 sio2 si transistor stack
Applied Physics Letters, 2011Co-Authors: Pierre Yves Prodhomme, Abram Van Der Geest, Philippe Blaise, Fabien Fontainevive, Jacky EvenAbstract:Ab initio techniques are used to calculate the effective Work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into account first order many body effects. The required band offsets were calculated at each interface varying its composition. Finally, the transitivity of local density approximation (LDA) calculated bulk band lineups were used and completed by many body perturbation theory (MBPT) bulk corrections for the terminating materials (Si and TiN) of the MOS stack. With these corrections the ab initio calculations predict a Weff of a TiN metal gate on HfO2 to be close to 5.0 eV.
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Ab initio calculation of effective Work Functions for a TiN/HfO2/SiO2/Si transistor stack
Applied Physics Letters, 2011Co-Authors: Pierre Yves Prodhomme, F. Fontaine-vive, Abram Van Der Geest, Philippe Blaise, Jacky EvenAbstract:Ab initio techniques are used to calculate the effective Work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into account first order many body effects. The required band offsets were calculated at each interface varying its composition. Finally the transitivity of LDA calculated bulk band lineups were used and completed by MBPT bulk corrections for the terminating materials (Si and TiN) of the MOS stack. With these corrections the ab initio calculations predict a Weff of a TiN metal gate on HfO2 to be close to 5.0 eV.
Pierre Yves Prodhomme - One of the best experts on this subject based on the ideXlab platform.
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ab initio calculation of effective Work Functions for a tin hfo2 sio2 si transistor stack
Applied Physics Letters, 2011Co-Authors: Pierre Yves Prodhomme, Abram Van Der Geest, Philippe Blaise, Fabien Fontainevive, Jacky EvenAbstract:Ab initio techniques are used to calculate the effective Work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into account first order many body effects. The required band offsets were calculated at each interface varying its composition. Finally, the transitivity of local density approximation (LDA) calculated bulk band lineups were used and completed by many body perturbation theory (MBPT) bulk corrections for the terminating materials (Si and TiN) of the MOS stack. With these corrections the ab initio calculations predict a Weff of a TiN metal gate on HfO2 to be close to 5.0 eV.
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Ab initio calculation of effective Work Functions for a TiN/HfO2/SiO2/Si transistor stack
Applied Physics Letters, 2011Co-Authors: Pierre Yves Prodhomme, F. Fontaine-vive, Abram Van Der Geest, Philippe Blaise, Jacky EvenAbstract:Ab initio techniques are used to calculate the effective Work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into account first order many body effects. The required band offsets were calculated at each interface varying its composition. Finally the transitivity of LDA calculated bulk band lineups were used and completed by MBPT bulk corrections for the terminating materials (Si and TiN) of the MOS stack. With these corrections the ab initio calculations predict a Weff of a TiN metal gate on HfO2 to be close to 5.0 eV.
Satoru Suzuki - One of the best experts on this subject based on the ideXlab platform.
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Work Functions of individual single walled carbon nanotubes
Applied Physics Letters, 2004Co-Authors: Satoru Suzuki, Yoshio Watanabe, Yoshikazu Homma, Shinya Fukuba, S Heun, A LocatelliAbstract:Work Functions of individual single-walled carbon nanotubes (SWNTs) were studied by means of photoemission electron microscopy. Work function differences between the nanotubes were clearly observed in secondary electron images. The Work Functions of 93 SWNTs were found to range within 0.6eV, but most distributed in a much narrower energy range of 0.2eV. The Work Functions of single-walled nanotubes do not seem to have large structural dependence.
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Work Functions and valence band states of pristine and cs intercalated single walled carbon nanotube bundles
Applied Physics Letters, 2000Co-Authors: Satoru Suzuki, Yoshio Watanabe, Christopher A Bower, Otto ZhouAbstract:The electronic structures and the Work Functions of pristine and Cs-intercalated single-walled carbon nanotube bundles were investigated using ultraviolet photoemission spectroscopy. The valence bands of the pristine bundles were considerably altered from those of graphite. A spectral shift to the higher binding energy side was observed in the Cs-intercalated sample. The Work function of the pristine bundles was found to be 4.8 eV, which is 0.1–0.2 eV larger than that of graphite. A drastic decrease of the Work function to about 2.4 eV was observed in the Cs-intercalated sample.
Abram Van Der Geest - One of the best experts on this subject based on the ideXlab platform.
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ab initio calculation of effective Work Functions for a tin hfo2 sio2 si transistor stack
Applied Physics Letters, 2011Co-Authors: Pierre Yves Prodhomme, Abram Van Der Geest, Philippe Blaise, Fabien Fontainevive, Jacky EvenAbstract:Ab initio techniques are used to calculate the effective Work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into account first order many body effects. The required band offsets were calculated at each interface varying its composition. Finally, the transitivity of local density approximation (LDA) calculated bulk band lineups were used and completed by many body perturbation theory (MBPT) bulk corrections for the terminating materials (Si and TiN) of the MOS stack. With these corrections the ab initio calculations predict a Weff of a TiN metal gate on HfO2 to be close to 5.0 eV.
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Ab initio calculation of effective Work Functions for a TiN/HfO2/SiO2/Si transistor stack
Applied Physics Letters, 2011Co-Authors: Pierre Yves Prodhomme, F. Fontaine-vive, Abram Van Der Geest, Philippe Blaise, Jacky EvenAbstract:Ab initio techniques are used to calculate the effective Work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into account first order many body effects. The required band offsets were calculated at each interface varying its composition. Finally the transitivity of LDA calculated bulk band lineups were used and completed by MBPT bulk corrections for the terminating materials (Si and TiN) of the MOS stack. With these corrections the ab initio calculations predict a Weff of a TiN metal gate on HfO2 to be close to 5.0 eV.
Philippe Blaise - One of the best experts on this subject based on the ideXlab platform.
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ab initio calculation of effective Work Functions for a tin hfo2 sio2 si transistor stack
Applied Physics Letters, 2011Co-Authors: Pierre Yves Prodhomme, Abram Van Der Geest, Philippe Blaise, Fabien Fontainevive, Jacky EvenAbstract:Ab initio techniques are used to calculate the effective Work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into account first order many body effects. The required band offsets were calculated at each interface varying its composition. Finally, the transitivity of local density approximation (LDA) calculated bulk band lineups were used and completed by many body perturbation theory (MBPT) bulk corrections for the terminating materials (Si and TiN) of the MOS stack. With these corrections the ab initio calculations predict a Weff of a TiN metal gate on HfO2 to be close to 5.0 eV.
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Ab initio calculation of effective Work Functions for a TiN/HfO2/SiO2/Si transistor stack
Applied Physics Letters, 2011Co-Authors: Pierre Yves Prodhomme, F. Fontaine-vive, Abram Van Der Geest, Philippe Blaise, Jacky EvenAbstract:Ab initio techniques are used to calculate the effective Work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into account first order many body effects. The required band offsets were calculated at each interface varying its composition. Finally the transitivity of LDA calculated bulk band lineups were used and completed by MBPT bulk corrections for the terminating materials (Si and TiN) of the MOS stack. With these corrections the ab initio calculations predict a Weff of a TiN metal gate on HfO2 to be close to 5.0 eV.
