The Experts below are selected from a list of 91410 Experts worldwide ranked by ideXlab platform
Frederic Grillot - One of the best experts on this subject based on the ideXlab platform.
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Linewidth Enhancement Factor and optical injection in a hybrid-silicon quantum dot comb laser
2019Co-Authors: Bozhang Dong, Jianan Duan, Heming Huang, Alfred Bewindin Sawadogo, Geza Kurczveil, Di Liang, Frederic GrillotAbstract:This work reports on the impact of the linewidth Enhancement Factor and the optical injection in a hybrid quantum dot comb laser. Results show that both the optical bandwidth and the flatness of the optical frequency comb can be improved.
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influence of the polarization anisotropy on the linewidth Enhancement Factor and reflection sensitivity of 1 55 μm inp based inas quantum dash lasers
Applied Physics Letters, 2019Co-Authors: Bozhang Dong, Frederic Grillot, Jianan Duan, Heming Huang, Daehwan Jung, John E Bowers, Chen Shang, A B SawadogoAbstract:This work investigates the effect of the polarization anisotropy on the linewidth Enhancement Factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth Enhancement Factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.This work investigates the effect of the polarization anisotropy on the linewidth Enhancement Factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth Enhancement Factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.
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semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth Enhancement Factor
Applied Physics Letters, 2018Co-Authors: Jianan Duan, Frederic Grillot, Heming Huang, Daehwan Jung, Zeyu Zhang, Justin Norman, John E BowersAbstract:This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.
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semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth Enhancement Factor
Applied Physics Letters, 2018Co-Authors: Jianan Duan, Frederic Grillot, Heming Huang, Daehwan Jung, Zeyu Zhang, Justin Norman, John E BowersAbstract:This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.
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Frequency-dependent linewidth Enhancement Factor of optical injection-locked quantum dot/dash lasers
Optics Express, 2015Co-Authors: Cheng Wang, Heming Huang, Jacky Even, Mohamed Chaibi, Didier Erasme, Philip Poole, Frederic GrillotAbstract:Combining theoretical and experimental studies show that optical injection strongly changes the behavior of the linewidth Enhancement Factor (αH-Factor) and the FM-to-AM indices ratio (FAIR) in quantum dash/dot semiconductor lasers. In contrast to solitary lasers, both the αH-Factor and the FAIR at low-frequency modulation are reduced by optical injection. At high modulation frequency, however, the phase-amplitude coupling characteristics are little influenced by optical injection.
Heming Huang - One of the best experts on this subject based on the ideXlab platform.
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Linewidth Enhancement Factor and optical injection in a hybrid-silicon quantum dot comb laser
2019Co-Authors: Bozhang Dong, Jianan Duan, Heming Huang, Alfred Bewindin Sawadogo, Geza Kurczveil, Di Liang, Frederic GrillotAbstract:This work reports on the impact of the linewidth Enhancement Factor and the optical injection in a hybrid quantum dot comb laser. Results show that both the optical bandwidth and the flatness of the optical frequency comb can be improved.
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influence of the polarization anisotropy on the linewidth Enhancement Factor and reflection sensitivity of 1 55 μm inp based inas quantum dash lasers
Applied Physics Letters, 2019Co-Authors: Bozhang Dong, Frederic Grillot, Jianan Duan, Heming Huang, Daehwan Jung, John E Bowers, Chen Shang, A B SawadogoAbstract:This work investigates the effect of the polarization anisotropy on the linewidth Enhancement Factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth Enhancement Factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.This work investigates the effect of the polarization anisotropy on the linewidth Enhancement Factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth Enhancement Factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.
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semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth Enhancement Factor
Applied Physics Letters, 2018Co-Authors: Jianan Duan, Frederic Grillot, Heming Huang, Daehwan Jung, Zeyu Zhang, Justin Norman, John E BowersAbstract:This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.
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semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth Enhancement Factor
Applied Physics Letters, 2018Co-Authors: Jianan Duan, Frederic Grillot, Heming Huang, Daehwan Jung, Zeyu Zhang, Justin Norman, John E BowersAbstract:This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.
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Frequency-dependent linewidth Enhancement Factor of optical injection-locked quantum dot/dash lasers
Optics Express, 2015Co-Authors: Cheng Wang, Heming Huang, Jacky Even, Mohamed Chaibi, Didier Erasme, Philip Poole, Frederic GrillotAbstract:Combining theoretical and experimental studies show that optical injection strongly changes the behavior of the linewidth Enhancement Factor (αH-Factor) and the FM-to-AM indices ratio (FAIR) in quantum dash/dot semiconductor lasers. In contrast to solitary lasers, both the αH-Factor and the FAIR at low-frequency modulation are reduced by optical injection. At high modulation frequency, however, the phase-amplitude coupling characteristics are little influenced by optical injection.
Jianan Duan - One of the best experts on this subject based on the ideXlab platform.
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Linewidth Enhancement Factor and optical injection in a hybrid-silicon quantum dot comb laser
2019Co-Authors: Bozhang Dong, Jianan Duan, Heming Huang, Alfred Bewindin Sawadogo, Geza Kurczveil, Di Liang, Frederic GrillotAbstract:This work reports on the impact of the linewidth Enhancement Factor and the optical injection in a hybrid quantum dot comb laser. Results show that both the optical bandwidth and the flatness of the optical frequency comb can be improved.
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influence of the polarization anisotropy on the linewidth Enhancement Factor and reflection sensitivity of 1 55 μm inp based inas quantum dash lasers
Applied Physics Letters, 2019Co-Authors: Bozhang Dong, Frederic Grillot, Jianan Duan, Heming Huang, Daehwan Jung, John E Bowers, Chen Shang, A B SawadogoAbstract:This work investigates the effect of the polarization anisotropy on the linewidth Enhancement Factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth Enhancement Factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.This work investigates the effect of the polarization anisotropy on the linewidth Enhancement Factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth Enhancement Factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.
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semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth Enhancement Factor
Applied Physics Letters, 2018Co-Authors: Jianan Duan, Frederic Grillot, Heming Huang, Daehwan Jung, Zeyu Zhang, Justin Norman, John E BowersAbstract:This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.
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semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth Enhancement Factor
Applied Physics Letters, 2018Co-Authors: Jianan Duan, Frederic Grillot, Heming Huang, Daehwan Jung, Zeyu Zhang, Justin Norman, John E BowersAbstract:This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.
Daehwan Jung - One of the best experts on this subject based on the ideXlab platform.
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influence of the polarization anisotropy on the linewidth Enhancement Factor and reflection sensitivity of 1 55 μm inp based inas quantum dash lasers
Applied Physics Letters, 2019Co-Authors: Bozhang Dong, Frederic Grillot, Jianan Duan, Heming Huang, Daehwan Jung, John E Bowers, Chen Shang, A B SawadogoAbstract:This work investigates the effect of the polarization anisotropy on the linewidth Enhancement Factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth Enhancement Factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.This work investigates the effect of the polarization anisotropy on the linewidth Enhancement Factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth Enhancement Factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.
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semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth Enhancement Factor
Applied Physics Letters, 2018Co-Authors: Jianan Duan, Frederic Grillot, Heming Huang, Daehwan Jung, Zeyu Zhang, Justin Norman, John E BowersAbstract:This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.
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semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth Enhancement Factor
Applied Physics Letters, 2018Co-Authors: Jianan Duan, Frederic Grillot, Heming Huang, Daehwan Jung, Zeyu Zhang, Justin Norman, John E BowersAbstract:This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.
John E Bowers - One of the best experts on this subject based on the ideXlab platform.
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influence of the polarization anisotropy on the linewidth Enhancement Factor and reflection sensitivity of 1 55 μm inp based inas quantum dash lasers
Applied Physics Letters, 2019Co-Authors: Bozhang Dong, Frederic Grillot, Jianan Duan, Heming Huang, Daehwan Jung, John E Bowers, Chen Shang, A B SawadogoAbstract:This work investigates the effect of the polarization anisotropy on the linewidth Enhancement Factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth Enhancement Factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.This work investigates the effect of the polarization anisotropy on the linewidth Enhancement Factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth Enhancement Factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.
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semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth Enhancement Factor
Applied Physics Letters, 2018Co-Authors: Jianan Duan, Frederic Grillot, Heming Huang, Daehwan Jung, Zeyu Zhang, Justin Norman, John E BowersAbstract:This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.
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semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth Enhancement Factor
Applied Physics Letters, 2018Co-Authors: Jianan Duan, Frederic Grillot, Heming Huang, Daehwan Jung, Zeyu Zhang, Justin Norman, John E BowersAbstract:This work reports on the ultra-low linewidth Enhancement Factor (αH-Factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth Enhancement Factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.