The Experts below are selected from a list of 9837 Experts worldwide ranked by ideXlab platform
Yong-zhen Huang - One of the best experts on this subject based on the ideXlab platform.
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optical bistability in inp gainasp Equilateral Triangle resonator microlasers
Optics Letters, 2009Co-Authors: Yong-zhen Huang, Shijiang Wang, Yuede Yang, Jinlong XiaoAbstract:Optical bistability is reported in InP/GaInAsP Equilateral-Triangle-resonator (ETR) microlasers, which are fabricated by planar technology. For a 30 mu m side ETR microlaser with a 2-mu m-wide output waveguide connected to one of the vertices of the ETR, hysteresis loops are observed for the output power versus the injection current from 215 to 235 K. The laser output spectra are measured in the upper and lower states of the hysteresis loop, which show strong mode competition among transverse modes. The hysteresis loops are demonstrated by two-mode rate equations with asymmetric cross gain saturation and different output efficiencies. (C) 2009 Optical Society of America
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Equilateral Triangle and square resonator semiconductor microlasers
IEEE Journal of Selected Topics in Quantum Electronics, 2009Co-Authors: Yuede Yang, Yong-zhen Huang, Kaijun Che, Shijiang WangAbstract:The characteristics of Equilateral-Triangle resonator (ETR) and square resonator microlasers are reported, which are potential light sources in the photonic integrations. Based on the numerical simulations, we find that high-efficiency directional emission can be achieved for the Triangle and square microlasers by directly connecting an output waveguide to the resonators. The electrically injected InP/InGaAsP ETR and square resonator microlasers with a 2-mum-wide output waveguide were fabricated by standard photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave (CW) operations were achieved for the ETR microlasers with the side length from 10 to 30 mum and the square resonator microlasers with the side length of 20 mum. The output power versus CW injection current and the laser spectra are presented for an ETR microlaser up to 310 K and a square resonator microlaser to 305 K. The lasing spectra with mode wavelength intervals as that of whispering-gallery-type modes and Fabry-Parot modes are observed for two square lasers, which can lase at low temperature and room temperature, respectively.
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continuous wave electrically injected inp gainasp Equilateral Triangle resonator lasers
International Conference on Transparent Optical Networks, 2007Co-Authors: Yong-zhen Huang, Qin Chen, Shijiang Wang, Zhongchao FanAbstract:Equilateral-Triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are fabricated using standard photolithography and inductively-coupled-plasma etching techniques. Continuous-wave electrically injected 1550 nm ETR laser with side length ranged from 15 to 30 mum are realized at room temperature.
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room temperature continuous wave electrically injected inp gainasp Equilateral Triangle resonator lasers
IEEE Photonics Technology Letters, 2007Co-Authors: Yong-zhen Huang, Qin Chen, Shijiang Wang, Zhongchao FanAbstract:Equilateral-Triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are suitable to be a light source for photonic integrated circuits. InP-GaInAsP ETR lasers with side length from 10 to 30 mum and the output-waveguide width of 1 or 2 mum are fabricated using standard photolithography and inductively coupled-plasma etching techniques. Continuous-wave electrically injected 1520-nm ETR laser with 20-m sides is realized with the maximum output power 0.17 and 0.067 mW and the threshold current 34 and 43 mA at 290 K and 295 K, respectively.
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Equilateral Triangle resonator injection lasers with directional emission
IEEE Journal of Quantum Electronics, 2007Co-Authors: Qin Chen, Yong-zhen Huang, Zhongchao FanAbstract:Equilateral-Triangle-resonator (ETR) lasers with an output waveguide jointed at one vertex of the resonator are fabricated on (100) GaInAsP-InP wafers using photolithography and a two-step inductively coupled plasma (ICP) etching technique. Distinct peaks with the mode spacing of longitudinal mode intervals are observed in the luminescence spectra at room temperature. Furthermore, some minor peaks appear in the middle of the main peaks, which can be attributed to the first-order transverse modes as predicted in the theoretical results. CW directional lasing emissions are achieved for ETR lasers with side lengths ranging from 15 to 30 mum up to 200 K. The temperature dependences of the threshold current and lasing wavelength are measured for an ETR laser with the side length of 20 mum from 80 to 200 K. The observed threshold current rapidly increases as temperature increases over 170 K
Shijiang Wang - One of the best experts on this subject based on the ideXlab platform.
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optical bistability in inp gainasp Equilateral Triangle resonator microlasers
Optics Letters, 2009Co-Authors: Yong-zhen Huang, Shijiang Wang, Yuede Yang, Jinlong XiaoAbstract:Optical bistability is reported in InP/GaInAsP Equilateral-Triangle-resonator (ETR) microlasers, which are fabricated by planar technology. For a 30 mu m side ETR microlaser with a 2-mu m-wide output waveguide connected to one of the vertices of the ETR, hysteresis loops are observed for the output power versus the injection current from 215 to 235 K. The laser output spectra are measured in the upper and lower states of the hysteresis loop, which show strong mode competition among transverse modes. The hysteresis loops are demonstrated by two-mode rate equations with asymmetric cross gain saturation and different output efficiencies. (C) 2009 Optical Society of America
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Equilateral Triangle and square resonator semiconductor microlasers
IEEE Journal of Selected Topics in Quantum Electronics, 2009Co-Authors: Yuede Yang, Yong-zhen Huang, Kaijun Che, Shijiang WangAbstract:The characteristics of Equilateral-Triangle resonator (ETR) and square resonator microlasers are reported, which are potential light sources in the photonic integrations. Based on the numerical simulations, we find that high-efficiency directional emission can be achieved for the Triangle and square microlasers by directly connecting an output waveguide to the resonators. The electrically injected InP/InGaAsP ETR and square resonator microlasers with a 2-mum-wide output waveguide were fabricated by standard photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave (CW) operations were achieved for the ETR microlasers with the side length from 10 to 30 mum and the square resonator microlasers with the side length of 20 mum. The output power versus CW injection current and the laser spectra are presented for an ETR microlaser up to 310 K and a square resonator microlaser to 305 K. The lasing spectra with mode wavelength intervals as that of whispering-gallery-type modes and Fabry-Parot modes are observed for two square lasers, which can lase at low temperature and room temperature, respectively.
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continuous wave electrically injected inp gainasp Equilateral Triangle resonator lasers
International Conference on Transparent Optical Networks, 2007Co-Authors: Yong-zhen Huang, Qin Chen, Shijiang Wang, Zhongchao FanAbstract:Equilateral-Triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are fabricated using standard photolithography and inductively-coupled-plasma etching techniques. Continuous-wave electrically injected 1550 nm ETR laser with side length ranged from 15 to 30 mum are realized at room temperature.
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room temperature continuous wave electrically injected inp gainasp Equilateral Triangle resonator lasers
IEEE Photonics Technology Letters, 2007Co-Authors: Yong-zhen Huang, Qin Chen, Shijiang Wang, Zhongchao FanAbstract:Equilateral-Triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are suitable to be a light source for photonic integrated circuits. InP-GaInAsP ETR lasers with side length from 10 to 30 mum and the output-waveguide width of 1 or 2 mum are fabricated using standard photolithography and inductively coupled-plasma etching techniques. Continuous-wave electrically injected 1520-nm ETR laser with 20-m sides is realized with the maximum output power 0.17 and 0.067 mW and the threshold current 34 and 43 mA at 290 K and 295 K, respectively.
Zhongchao Fan - One of the best experts on this subject based on the ideXlab platform.
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continuous wave electrically injected inp gainasp Equilateral Triangle resonator lasers
International Conference on Transparent Optical Networks, 2007Co-Authors: Yong-zhen Huang, Qin Chen, Shijiang Wang, Zhongchao FanAbstract:Equilateral-Triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are fabricated using standard photolithography and inductively-coupled-plasma etching techniques. Continuous-wave electrically injected 1550 nm ETR laser with side length ranged from 15 to 30 mum are realized at room temperature.
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room temperature continuous wave electrically injected inp gainasp Equilateral Triangle resonator lasers
IEEE Photonics Technology Letters, 2007Co-Authors: Yong-zhen Huang, Qin Chen, Shijiang Wang, Zhongchao FanAbstract:Equilateral-Triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are suitable to be a light source for photonic integrated circuits. InP-GaInAsP ETR lasers with side length from 10 to 30 mum and the output-waveguide width of 1 or 2 mum are fabricated using standard photolithography and inductively coupled-plasma etching techniques. Continuous-wave electrically injected 1520-nm ETR laser with 20-m sides is realized with the maximum output power 0.17 and 0.067 mW and the threshold current 34 and 43 mA at 290 K and 295 K, respectively.
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Equilateral Triangle resonator injection lasers with directional emission
IEEE Journal of Quantum Electronics, 2007Co-Authors: Qin Chen, Yong-zhen Huang, Zhongchao FanAbstract:Equilateral-Triangle-resonator (ETR) lasers with an output waveguide jointed at one vertex of the resonator are fabricated on (100) GaInAsP-InP wafers using photolithography and a two-step inductively coupled plasma (ICP) etching technique. Distinct peaks with the mode spacing of longitudinal mode intervals are observed in the luminescence spectra at room temperature. Furthermore, some minor peaks appear in the middle of the main peaks, which can be attributed to the first-order transverse modes as predicted in the theoretical results. CW directional lasing emissions are achieved for ETR lasers with side lengths ranging from 15 to 30 mum up to 200 K. The temperature dependences of the threshold current and lasing wavelength are measured for an ETR laser with the side length of 20 mum from 80 to 200 K. The observed threshold current rapidly increases as temperature increases over 170 K
Weihua Guo - One of the best experts on this subject based on the ideXlab platform.
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analysis of mode characteristics for Equilateral Triangle semiconductor microlasers with imperfect boundaries
IEE Proceedings - Optoelectronics, 2004Co-Authors: Yu Huang, Weihua GuoAbstract:The influence of imperfect boundaries on the mode quality factor is investigated for Equilateral-Triangle-resonator (ETR) semiconductor microlasers by the finite difference time domain technique and the Padeapproximation with Baker's algorithm. For 2-D ETR with a refractive index of 3.2 and side length of 5mm, the confined modes can still have a quality factor of about 1000 as small Triangles with side length of 1mm are cut from the vertices of the ETR. For a deformed 5mm ETR with round vertices and curve sides, the simulated mode quality factors are comparable to the measured results.
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mode characteristics of semiconductor Equilateral Triangle microcavities with side length of 5 20 spl mu m
IEEE Photonics Technology Letters, 2004Co-Authors: Xiaohong Chen, Yong-zhen Huang, Weihua Guo, Jian Wang, Yi LuoAbstract:Semiconductor Equilateral Triangle microresonators (ETRs) with side length of 5, 10, and 20 /spl mu/m are fabricated by the two-step inductively coupled plasma (ICP) etching technique. The mode properties of fabricated InGaAsP ETRs are investigated experimentally by photoluminescence (PL) with the pumping source of a 980-nm semiconductor laser and distinct peaks are observed in the measured PL spectra. The wavelength spacings of the distinct peaks agree very well with the theoretical longitudinal mode intervals of the fundamental transverse modes in the ETRs, which verifies that the distinct peaks are corresponding to the enhancement of resonant modes. The mode quality factors are calculated from the width of the resonant peaks of the PL spectra, which are about 100 for the ETR with side length of 20 /spl mu/m.
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experimental study of mode characteristics for Equilateral Triangle semiconductor microcavities
Chinese Optics Letters, 2003Co-Authors: Xiaohong Chen, Yong-zhen Huang, Weihua Guo, Jian Wang, Yi LuoAbstract:Equilateral Triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well asthe active region are fabricated by the inductively coupled plasma (ICP) etching technique. The modecharacteristics of the fabricated microcavities are investigated by photoluminescence, and enhanced peaksof the photoluminescence spectra corresponding to the fundamental transverse modes are observed formicrocavities with side lengths of 5 and 10 μm. The mode wavelength spacings measured experimentallycoincide very well with those obtained by the theoretical formulae.
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size limit and spontaneous emission factor for Equilateral Triangle semiconductor microlasers
IEE Proceedings - Optoelectronics, 2001Co-Authors: Y Z Huang, Weihua GuoAbstract:The size of Equilateral Triangle resonator (ETR) needed for confining the fundamental mode is investigated by the total reflection condition of mode light rays and the FDTD numerical simulation. The confinement of the TM modes can be explained by the total reflection of mode light rays, and the confinement of the TE modes requires a larger ETR than the TM modes, which may be caused by excess scattering or radiation loss for the TE modes. With the multilayer staircase approximation, it is found that the spontaneous emission factor of the ETR lasers has the same form as that of strip waveguide lasers.
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analysis of semiconductor microlasers with an Equilateral Triangle resonator by rate equations
IEEE Journal of Quantum Electronics, 2001Co-Authors: Yong-zhen Huang, Weihua Guo, Hongbin LeiAbstract:Semiconductor microlasers with an Equilateral Triangle resonator (ETR) are analyzed by rate equations with the mode lifetimes calculated by the finite-difference time-domain technique and the Pade approximation. A gain spectrum based on the relation of the gain spectrum and the spontaneous emission spectrum is proposed for considering the mode selection in a wide wavelength span. For an ETR microlaser with a side length of about 5 /spl mu/m, we find that single fundamental mode operation at about 1.55 /spl mu/m can be obtained as the side length increases from 4.75 to 5.05 /spl mu/m. The corresponding wavelength tuning range is 93 nm, and the threshold current is about 0.1 to 0.4 mA.
Qin Chen - One of the best experts on this subject based on the ideXlab platform.
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continuous wave electrically injected inp gainasp Equilateral Triangle resonator lasers
International Conference on Transparent Optical Networks, 2007Co-Authors: Yong-zhen Huang, Qin Chen, Shijiang Wang, Zhongchao FanAbstract:Equilateral-Triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are fabricated using standard photolithography and inductively-coupled-plasma etching techniques. Continuous-wave electrically injected 1550 nm ETR laser with side length ranged from 15 to 30 mum are realized at room temperature.
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room temperature continuous wave electrically injected inp gainasp Equilateral Triangle resonator lasers
IEEE Photonics Technology Letters, 2007Co-Authors: Yong-zhen Huang, Qin Chen, Shijiang Wang, Zhongchao FanAbstract:Equilateral-Triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are suitable to be a light source for photonic integrated circuits. InP-GaInAsP ETR lasers with side length from 10 to 30 mum and the output-waveguide width of 1 or 2 mum are fabricated using standard photolithography and inductively coupled-plasma etching techniques. Continuous-wave electrically injected 1520-nm ETR laser with 20-m sides is realized with the maximum output power 0.17 and 0.067 mW and the threshold current 34 and 43 mA at 290 K and 295 K, respectively.
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Equilateral Triangle resonator injection lasers with directional emission
IEEE Journal of Quantum Electronics, 2007Co-Authors: Qin Chen, Yong-zhen Huang, Zhongchao FanAbstract:Equilateral-Triangle-resonator (ETR) lasers with an output waveguide jointed at one vertex of the resonator are fabricated on (100) GaInAsP-InP wafers using photolithography and a two-step inductively coupled plasma (ICP) etching technique. Distinct peaks with the mode spacing of longitudinal mode intervals are observed in the luminescence spectra at room temperature. Furthermore, some minor peaks appear in the middle of the main peaks, which can be attributed to the first-order transverse modes as predicted in the theoretical results. CW directional lasing emissions are achieved for ETR lasers with side lengths ranging from 15 to 30 mum up to 200 K. The temperature dependences of the threshold current and lasing wavelength are measured for an ETR laser with the side length of 20 mum from 80 to 200 K. The observed threshold current rapidly increases as temperature increases over 170 K
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Mode characteristics for Equilateral Triangle optical resonators
IEEE Journal of Selected Topics in Quantum Electronics, 2006Co-Authors: Yong-zhen Huang, Qiaoyin Lu, Qin Chen, L.j. YuAbstract:Mode characteristics of Equilateral Triangle resonators (ETRs) are analyzed based on the symmetry operation of the point group C/sub 3v/. The results show that doubly degenerate eigenstates can be reduced to the A/sub 1/ and A/sub 2/ representations of C/sub 3v/, if the longitudinal mode number is a multiple of 6; otherwise, they form the E irreducible representation of C/sub 3v/. And the one-period length for the mode light ray is half of the perimeter of the ETR. Mode Q-factors are calculated by the finite-difference time-domain (FDTD) technique and compared with those calculated from far-field emission based on the analytical near-field pattern for TE and TM modes. The results show that the far-field emission based on the analytical field distribution can be used to estimate the mode Q-factor, especially for TM modes. FDTD numerical results also show that Q-factor of TE modes reaches maximum value as the longitudinal mode number is a multiple of 7. In addition, photoluminescence spectra and measured Q-factors are presented for fabricated ETR with side lengths of 20 and 30 /spl mu/m, and the mode wavelength intervals are compared with the analytical results.