The Experts below are selected from a list of 48867 Experts worldwide ranked by ideXlab platform
Dongmok Whang - One of the best experts on this subject based on the ideXlab platform.
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seed free electrochemical growth of zno nanotube arrays on single layer graphene
Materials Letters, 2012Co-Authors: Byungsung Kim, Jaehyun Lee, Minjin Kim, Sungwoo Hwang, Byong Lyong Choi, Eun Kyung Lee, Jong Min Kim, Dongmok WhangAbstract:Abstract Dense and vertical ZnO nanotubes were directly grown on single-layer graphene by convenient electrochemical deposition method, without ZnO seed layer, O 2 bubbling, electrolyte assistance, or additional Etching Process. The formation of the ZnO nanotubes was governed by the self-Etching Process with H + generated during the growth Process. The hole depth of the nanotubes can be controlled by adjusting deposition time. The nanotubes have weak visible luminescence intensity in photoluminescence spectrum, indicating excellent crystalline properties. The transmittance of the nanotubes on graphene/glass electrode was above 75% over entire visible range.
K Ensslin - One of the best experts on this subject based on the ideXlab platform.
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graphene nanoribbons relevance of Etching Process
Journal of Applied Physics, 2015Co-Authors: Pauline Simonet, Dominik Bischoff, Annina Moser, Thomas Ihn, K EnsslinAbstract:Most graphene nanoribbons in the experimental literature are patterned using plasma Etching. Various Etching Processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used Etching techniques, namely, O2 plasma ashing and O2 + Ar reactive ion Etching (RIE). O2 plasma ashing represents an alternative to RIE physical Etching for sensitive substrates, as it is a more gentle chemical Process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.
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graphene nanoribbons relevance of Etching Process
arXiv: Mesoscale and Nanoscale Physics, 2015Co-Authors: Pauline Simonet, Dominik Bischoff, Annina Moser, Thomas Ihn, K EnsslinAbstract:Most graphene nanoribbons in the experimental literature are patterned using plasma Etching. Various Etching Processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used Etching techniques, namely oxygen plasma ashing and oxygen/argon reactive ion Etching (RIE). Oxygen plasma ashing represents an alternative to RIE physical Etching for sensitive substrates, as it is a more gentle chemical Process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.
G Tsigaridas - One of the best experts on this subject based on the ideXlab platform.
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theoretical and experimental study of refractive index sensors based on etched fiber bragg gratings
Sensors and Actuators A-physical, 2014Co-Authors: G Tsigaridas, D Polyzos, A Ioannou, M Fakis, P PersephonisAbstract:Abstract In this work, a theoretical and experimental study of the effect of the Etching Process on the properties of fiber Bragg gratings (FBGs) used as refractive index sensors is presented. The theoretical study addresses the dependence of the effective refractive index on the cladding thickness of the etched FBG. The results of this study show that as the cladding thickness is reduced, the effective refractive index decreases exponentially. Based on this result, a simple analytic expression between the effective refractive index and the radius of the etched FBG was developed. Thus, the radius of the FBG after the Etching Process can be determined directly from the shift of the Bragg wavelength, without the need of extensive numerical simulations. Also, the sensitivity of the FBG sensor in characteristic environments of practical interest has been calculated as a function of the fiber radius, and found to be described by simple analytic functions. The time evolution of the Bragg wavelength during the Etching Process has also been investigated, both experimentally and theoretically. By means of detailed theoretical analysis of the experimental results, the heating and the Etching rate of the FBG was calculated. Finally, the etched FBGs have been used as liquid level sensors for water and oil, having refractive indices lower and higher than the fiber core respectively. The analysis of the experimental results was based on the shift of the diffracted wavelength in the case of water and on the reduction of the reflected power in the case of oil.
Rayhua Horng - One of the best experts on this subject based on the ideXlab platform.
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ingan based light emitting diodes with a cone shaped sidewall structure fabricated through a crystallographic wet Etching Process
Electrochemical and Solid State Letters, 2009Co-Authors: Chungchieh Yang, Weikai Wang, Yuchieh Huang, Jienan Chen, Rayhua HorngAbstract:The InGaN-based light-emitting diodes (LEDs) were fabricated through a crystallographic Etching Process to increase their light extraction efficiency. After the laser scribing and the selective lateral wet Etching Processes at the LED chip edge region, the stable crystallographic Etching planes were formed as the GaN {1012} planes and had an including angle with the top GaN (0001) plane measured as 40.3°. The AlN buffer layer acted as the sacrificial layer for the lateral wet Process with a 27.5 μm/h Etching rate. The continuous cone-shaped sidewall (CSS) structure of the treated LED has a larger light-scattering area and higher light extraction cones around the LED chips. The LED with the CSS structure around the chip edge region has a higher light output power compared to a conventional LED when measured in LED chip form.
Pauline Simonet - One of the best experts on this subject based on the ideXlab platform.
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graphene nanoribbons relevance of Etching Process
Journal of Applied Physics, 2015Co-Authors: Pauline Simonet, Dominik Bischoff, Annina Moser, Thomas Ihn, K EnsslinAbstract:Most graphene nanoribbons in the experimental literature are patterned using plasma Etching. Various Etching Processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used Etching techniques, namely, O2 plasma ashing and O2 + Ar reactive ion Etching (RIE). O2 plasma ashing represents an alternative to RIE physical Etching for sensitive substrates, as it is a more gentle chemical Process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.
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graphene nanoribbons relevance of Etching Process
arXiv: Mesoscale and Nanoscale Physics, 2015Co-Authors: Pauline Simonet, Dominik Bischoff, Annina Moser, Thomas Ihn, K EnsslinAbstract:Most graphene nanoribbons in the experimental literature are patterned using plasma Etching. Various Etching Processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used Etching techniques, namely oxygen plasma ashing and oxygen/argon reactive ion Etching (RIE). Oxygen plasma ashing represents an alternative to RIE physical Etching for sensitive substrates, as it is a more gentle chemical Process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.