The Experts below are selected from a list of 1662 Experts worldwide ranked by ideXlab platform
Shao-kuan Lee - One of the best experts on this subject based on the ideXlab platform.
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Eutectic Bonding of copper to ceramics for thermal dissipation applications - A review
Journal of the European Ceramic Society, 2014Co-Authors: Wei-hsing Tuan, Shao-kuan LeeAbstract:Metallic copper, which has low electrical resistivity and high thermal conductivity, is widely used as an interconnector or substrate within microelectronic packages. If a small amount of oxygen is introduced to the surface of the copper, a Eutectic liquid forms above 1065°C. The Eutectic liquid wets many ceramics well it is thus possible to bond slightly oxidized copper to many ceramics directly. The present report summarizes previous results on three systems, Al2O3/Cu, AlN/Cu, and Si3N4/Cu laminates, prepared by the Eutectic Bonding process. The reported data demonstrate that ceramic/copper interfaces prepared with this technique are strong. Though little attention has been paid to the thermal characteristics of ceramic/copper laminates, the limited data suggest that the thermal conductivity of the laminates is high, the potential for using the laminates for thermal dissipation is thus high. In the present report, the current status for the technique is summarized; critical topics for further improvement are also proposed.
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Eutectic Bonding of copper to ceramics for thermal dissipation applications – A review
Journal of the European Ceramic Society, 2014Co-Authors: Wei-hsing Tuan, Shao-kuan LeeAbstract:Abstract Metallic copper, which has low electrical resistivity and high thermal conductivity, is widely used as an interconnector or substrate within microelectronic packages. If a small amount of oxygen is introduced to the surface of the copper, a Eutectic liquid forms above 1065 °C. The Eutectic liquid wets many ceramics well; it is thus possible to bond slightly oxidized copper to many ceramics directly. The present report summarizes previous results on three systems, Al2O3/Cu, AlN/Cu, and Si3N4/Cu laminates, prepared by the Eutectic Bonding process. The reported data demonstrate that ceramic/copper interfaces prepared with this technique are strong. Though little attention has been paid to the thermal characteristics of ceramic/copper laminates, the limited data suggest that the thermal conductivity of the laminates is high, the potential for using the laminates for thermal dissipation is thus high. In the present report, the current status for the technique is summarized; critical topics for further improvement are also proposed.
Wei-hsing Tuan - One of the best experts on this subject based on the ideXlab platform.
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Eutectic Bonding of copper to ceramics for thermal dissipation applications - A review
Journal of the European Ceramic Society, 2014Co-Authors: Wei-hsing Tuan, Shao-kuan LeeAbstract:Metallic copper, which has low electrical resistivity and high thermal conductivity, is widely used as an interconnector or substrate within microelectronic packages. If a small amount of oxygen is introduced to the surface of the copper, a Eutectic liquid forms above 1065°C. The Eutectic liquid wets many ceramics well it is thus possible to bond slightly oxidized copper to many ceramics directly. The present report summarizes previous results on three systems, Al2O3/Cu, AlN/Cu, and Si3N4/Cu laminates, prepared by the Eutectic Bonding process. The reported data demonstrate that ceramic/copper interfaces prepared with this technique are strong. Though little attention has been paid to the thermal characteristics of ceramic/copper laminates, the limited data suggest that the thermal conductivity of the laminates is high, the potential for using the laminates for thermal dissipation is thus high. In the present report, the current status for the technique is summarized; critical topics for further improvement are also proposed.
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Eutectic Bonding of copper to ceramics for thermal dissipation applications – A review
Journal of the European Ceramic Society, 2014Co-Authors: Wei-hsing Tuan, Shao-kuan LeeAbstract:Abstract Metallic copper, which has low electrical resistivity and high thermal conductivity, is widely used as an interconnector or substrate within microelectronic packages. If a small amount of oxygen is introduced to the surface of the copper, a Eutectic liquid forms above 1065 °C. The Eutectic liquid wets many ceramics well; it is thus possible to bond slightly oxidized copper to many ceramics directly. The present report summarizes previous results on three systems, Al2O3/Cu, AlN/Cu, and Si3N4/Cu laminates, prepared by the Eutectic Bonding process. The reported data demonstrate that ceramic/copper interfaces prepared with this technique are strong. Though little attention has been paid to the thermal characteristics of ceramic/copper laminates, the limited data suggest that the thermal conductivity of the laminates is high, the potential for using the laminates for thermal dissipation is thus high. In the present report, the current status for the technique is summarized; critical topics for further improvement are also proposed.
Bin Xiong - One of the best experts on this subject based on the ideXlab platform.
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Modified Au/bulk Si Eutectic Bonding structure with reliable compatibility of KOH etching based on two-step local oxidation of silicon
Semiconductor Science and Technology, 2020Co-Authors: Hengmao Liang, Bin XiongAbstract:KOH etching and Au/Si Bonding are primarily cost-efficient technologies for the miniaturization and integration of 3D device fabrications. In view of the incompatibility between the conventional Au/bulk Si Bonding and KOH etching, a modified Au/bulk Si Eutectic Bonding structure is proposed and verified in this study. Inspired from the local oxidation of silicon (LOCOS) processes, the Au/Si Eutectic reaction interfaces, which are vulnerable in KOH etching, can be protected with the oxide layers by the two-step thermal oxidation processes. Based on IR and SEM&EDS analyses, different etching performances have been dissected at different process parameters, in which choosing two-step oxidation thicknesses plays a critical role. Specifically, the first-step oxidation thickness should be 1.273 times larger than the second-step oxidation while considering the KOH etching ratio of Si to silica. Further, acquired from tensile tests, the average floor levels of Bonding strengths (~23 MPa) indicate considerable application potentialities of the modified Au/bulk Si Bonding structure in packaging, structure supporting and etc.. Actually, this study provides an analogical strategy for another Si-based Eutectic Bonding techniques used for wet etching processes.
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TSV-Free Vertical Interconnection Technology Using Au-Si Eutectic Bonding for MEMS Wafer-Level Packaging
2019 20th International Conference on Solid-State Sensors Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), 2019Co-Authors: Hengmao Liang, Song Liu, Bin XiongAbstract:Developments of advanced Vertical Interconnection Technologies have been indispensable parts of achieving MEMS three-dimensional (3D) integration. This paper presents a TSV-free Vertical Interconnection Technology using Au-Si Eutectic Bonding applied on MEMS wafer-level packaging (WLP), which simplifies processes and promotes all-Si fabrication abilities in MEMS 3D WLP. Specifically, by forming Au-Si ohmic contacts in Au-Si Bonding, it is cost-efficacious to employ low-resistivity Si columns (rather than conventional metal TSV structures) in Cap wafers as vertically electrical pathways while accomplishing sealing functions. Based on testing results of signal interfacing and hermetic packaging for MEMS devices, the proposed technology possesses extensive application prospects.
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The Bond Strength of Au/Si Eutectic Bonding Studied by IR Microscope
IEEE Transactions on Electronics Packaging Manufacturing, 2010Co-Authors: Errong Jing, Bin Xiong, Yuelin WangAbstract:The interface of Au/Si(100) Eutectic Bonding was investigated by infrared (IR) microscope and related to the bond strength. A strong relationship between the IR images and the bond strengths was found. Bond strength test showed that a strong bond has many square black spots in the IR images, whereas a poor bond has fewer or no square black spots. In order to study the nature of the relationship, the dissolution behavior of the bare Si(100) surface after Bonding was investigated. During the Au/Si(100) Eutectic reaction, the dissolution of the bare Si(100) surface primarily occurs by the formation of the craters which result in many square black spots in the IR images. The formation of the craters is ascribed to the anisotropic nature of Au/Si reaction that results in three-dimensional dissolution behavior on the bare Si(100) side. In order to further test the anisotropy hypothesis, Au/Si(111) Bonding was also studied. Under the same Bonding conditions, triangular black spots were observed in the IR images and triangular pits were found on the bare Si(111) surface. The analysis suggests that the craters on the bare Si(100) surface, in other words the square black spots in the IR images, are the indication of Au/Si(100) Eutectic reaction. More craters mean a reaction between Au and Si(100), which occurs uniformly at the Au/Si(100) Bonding interface compared to the case of fewer craters. No crater indicates that there is no Eutectic reaction in the region. Therefore, the IR microscope may be used to evaluate and compare the different bond strengths qualitatively.
Reinoud F. Wolffenbuttel - One of the best experts on this subject based on the ideXlab platform.
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low temperature intermediate au si wafer Bonding Eutectic or silicide bond
Sensors and Actuators A-physical, 1997Co-Authors: Reinoud F. WolffenbuttelAbstract:Abstract The actual mechanism involved in Au-Si wafer Bonding is controversial. Usually a titanium or chromium layer is deposited in between the (oxidized) silicon substrate and the gold layer to ensure adhesion. The resulting bond of two such wafers after annealing is generally considered to be Eutectic, however, the bond temperature required is higher than would be expected from the Au-Si Eutectic temperature. Moreover, silicide grains are formed at the Bonding interface. In this paper it is proposed that the actual Bonding is initiated by the dissolution of the oxide layer by silicidation of the titanium adhesion/barrier layer. The subsequent direct Au-Si contact enables the formation of the euteetic phase. The silicidation is required to obtain the Eutectic alloy with 19 at.% Si despite the Ti diffusion barrier. The Bonding temperature required is, therefore, set by the silicidation process rather than by the Eutectic phase. Several experiments have been designed to support this theory. AI-Si Eutectic Bonding has been investigated, as it is not complicated by an adhesion metal and experiments demonstrate reliable Bonding close to its Eutectic temperature. Moreover, a Ti/Au/Si/Au stack has been fabricated to be used as a Eutectic solder, giving Bonding at a temperature not affected by silicidation. Keywords Eutectic Bonding Gold Silicide Bonding Silicon Wafer Bonding
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Low-temperature silicon wafer-to-wafer Bonding using gold at Eutectic temperature
Sensors and Actuators A: Physical, 1994Co-Authors: Reinoud F. Wolffenbuttel, Kensall D. WiseAbstract:Abstract Micromechanical smart sensor and actuator systems of high complexity become commercially viable when realized as a multi-wafer device in which the mechanical functions are distributed over different wafers and one of the wafers is dedicated to contain the readout circuits. The individually-processed wafers can be assembled using wafer-to-wafer Bonding and can be combined to one single functional electro-mechanical unit using through-wafer interconnect, provided that the processes involved comply with the constraints imposed by the proper operation of the active electrical and micromechanical subsystems. This implies low-temperature wafer-to-wafer Bonding and through-wafer interconnect. Au/Si Eutectic Bonding has been investigated as it can conveniently be combined with bulk-micromachined through-wafer interconnect. The temperature control in Eutectic Bonding has been shown to be critical.
W. Van Der Wijngaart - One of the best experts on this subject based on the ideXlab platform.
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SMA Microvalves for Very Large Gas Flow Control Manufactured Using Wafer-Level Eutectic Bonding
IEEE Transactions on Industrial Electronics, 2012Co-Authors: Henrik Gradin, Stefan Braun, Göran Stemme, W. Van Der WijngaartAbstract:This paper presents a novel gas microvalve design concept, in which a flow control gate is opened by a pneumatic pressure and closed by a shape memory alloy actuator, allowing large flow control. Two different design variations were fabricated using a novel wafer-level Au-Si Eutectic Bonding process for TiNi to silicon integration. The resulting microvalves demonstrate a record pneumatic performance per footprint area; a microvalve with a footprint of only 1 3.3 mm2 successfully controls a flow difference of 3100 sccm at a pressure drop of 70 kPa using a power of 0.35 W.
