The Experts below are selected from a list of 55824 Experts worldwide ranked by ideXlab platform
John E Bowers - One of the best experts on this subject based on the ideXlab platform.
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single wavelength silicon Evanescent lasers
IEEE Journal of Selected Topics in Quantum Electronics, 2009Co-Authors: Alexander W Fang, M N Sysak, Richard Jones, Omri Raday, Brian R Koch, Erica Lively, Di Liang, John E BowersAbstract:The silicon Evanescent device platform provides electrically pumped active device functionality on a low-loss silicon-on-insulator waveguide platform. We present here recent research in the area of single-wavelength silicon Evanescent lasers that utilize distributed feedback, distributed Bragg reflector (DBR), and sampled grating (SG) DBR laser topographies.
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1310nm silicon Evanescent laser
International Conference on Group IV Photonics, 2007Co-Authors: Hsuhao Chang, Alexander W Fang, M N Sysak, Hyundai Park, Richard Jones, Oded Cohen, Omri Raday, Mario J Paniccia, John E BowersAbstract:An electrically pumped 1310 nm silicon Evanescent laser (SEL) is demonstrated utilizing the hybrid silicon Evanescent waveguide platform. The SEL operates continuous wave (C.W.) up to 105degC with a threshold current of 30 mA and a maximum output power of 5.5 mW.
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integrated algainas silicon Evanescent racetrack laser and photodetector
Proceedings of SPIE the International Society for Optical Engineering, 2007Co-Authors: Alexander W Fang, Hyundai Park, Richard Jones, Oded Cohen, Omri Raday, Mario J Paniccia, John E BowersAbstract:Recently, AlGaInAs-silicon Evanescent lasers have been demonstrated as a method of integrating active photonic devices on a silicon based platform. This hybrid waveguide architecture consists of III-V quantum wells bonded to silicon waveguides. The self aligned optical mode leads to a bonding process that is manufacturable in high volumes. Here give an overview of a racetrack resonator laser integrated with two photo-detectors on the hybrid AlGaInAs-silicon Evanescent device platform. Unlike previous demonstrations of hybrid AlGaInAs-silicon Evanescent lasers, we demonstrate an on-chip racetrack resonator laser that does not rely on facet polishing and dicing in order to define the laser cavity. The laser runs continuous-wave (c.w.) at 1590 nm with a threshold of 175 mA, has a maximum total output power of 29 mW and a maximum operating temperature of 60 C. The output of this laser light is directly coupled into a pair of on chip hybrid AlGaInAs-silicon Evanescent photodetectors used to measure the laser output.
Alexander W Fang - One of the best experts on this subject based on the ideXlab platform.
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single wavelength silicon Evanescent lasers
IEEE Journal of Selected Topics in Quantum Electronics, 2009Co-Authors: Alexander W Fang, M N Sysak, Richard Jones, Omri Raday, Brian R Koch, Erica Lively, Di Liang, John E BowersAbstract:The silicon Evanescent device platform provides electrically pumped active device functionality on a low-loss silicon-on-insulator waveguide platform. We present here recent research in the area of single-wavelength silicon Evanescent lasers that utilize distributed feedback, distributed Bragg reflector (DBR), and sampled grating (SG) DBR laser topographies.
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1310nm silicon Evanescent laser
International Conference on Group IV Photonics, 2007Co-Authors: Hsuhao Chang, Alexander W Fang, M N Sysak, Hyundai Park, Richard Jones, Oded Cohen, Omri Raday, Mario J Paniccia, John E BowersAbstract:An electrically pumped 1310 nm silicon Evanescent laser (SEL) is demonstrated utilizing the hybrid silicon Evanescent waveguide platform. The SEL operates continuous wave (C.W.) up to 105degC with a threshold current of 30 mA and a maximum output power of 5.5 mW.
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integrated algainas silicon Evanescent racetrack laser and photodetector
Proceedings of SPIE the International Society for Optical Engineering, 2007Co-Authors: Alexander W Fang, Hyundai Park, Richard Jones, Oded Cohen, Omri Raday, Mario J Paniccia, John E BowersAbstract:Recently, AlGaInAs-silicon Evanescent lasers have been demonstrated as a method of integrating active photonic devices on a silicon based platform. This hybrid waveguide architecture consists of III-V quantum wells bonded to silicon waveguides. The self aligned optical mode leads to a bonding process that is manufacturable in high volumes. Here give an overview of a racetrack resonator laser integrated with two photo-detectors on the hybrid AlGaInAs-silicon Evanescent device platform. Unlike previous demonstrations of hybrid AlGaInAs-silicon Evanescent lasers, we demonstrate an on-chip racetrack resonator laser that does not rely on facet polishing and dicing in order to define the laser cavity. The laser runs continuous-wave (c.w.) at 1590 nm with a threshold of 175 mA, has a maximum total output power of 29 mW and a maximum operating temperature of 60 C. The output of this laser light is directly coupled into a pair of on chip hybrid AlGaInAs-silicon Evanescent photodetectors used to measure the laser output.
Qiwen Zhan - One of the best experts on this subject based on the ideXlab platform.
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realization of an Evanescent bessel beam via surface plasmon interference excited by a radially polarized beam
Optics Letters, 2009Co-Authors: Weibin Chen, Qiwen ZhanAbstract:We report the experimental confirmation of the Evanescent Bessel beam generation via surface plamson resonance excitation with a radially polarized beam. The interference of surface plasmon waves excited by a radially polarized beam creates an Evanescent Bessel beam with enhanced localized field and spot size beyond the diffraction limit. The excitation of the surface plasmon is confirmed by the observation of a narrow dark ring at the back focal plane. Two-dimensional intensity distributions at different distances from the sample surface are mapped by a collection-mode near-field scanning optical microscope to verify the nondiffracting and decaying natures of the Evanescent Bessel beam.
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Evanescent bessel beam generation via surface plasmon resonance excitation by a radially polarized beam
Optics Letters, 2006Co-Authors: Qiwen ZhanAbstract:A simple setup for generating Evanescent Bessel beams is proposed. When a radially polarized beam is strongly focused onto a dielectric-metal interface, the entire beam is p-polarized with respect to the dielectric-metal interface, enabling excitation of surface plasmons from all directions. The angular selectivity of surface plasmon excitation mimics the function of an axicon, leading to an Evanescent nondiffracting Bessel beam. The created Evanescent Bessel beam may be used as a virtual probe for near-field optical imaging and sensing applications.
Richard Jones - One of the best experts on this subject based on the ideXlab platform.
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single wavelength silicon Evanescent lasers
IEEE Journal of Selected Topics in Quantum Electronics, 2009Co-Authors: Alexander W Fang, M N Sysak, Richard Jones, Omri Raday, Brian R Koch, Erica Lively, Di Liang, John E BowersAbstract:The silicon Evanescent device platform provides electrically pumped active device functionality on a low-loss silicon-on-insulator waveguide platform. We present here recent research in the area of single-wavelength silicon Evanescent lasers that utilize distributed feedback, distributed Bragg reflector (DBR), and sampled grating (SG) DBR laser topographies.
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1310nm silicon Evanescent laser
International Conference on Group IV Photonics, 2007Co-Authors: Hsuhao Chang, Alexander W Fang, M N Sysak, Hyundai Park, Richard Jones, Oded Cohen, Omri Raday, Mario J Paniccia, John E BowersAbstract:An electrically pumped 1310 nm silicon Evanescent laser (SEL) is demonstrated utilizing the hybrid silicon Evanescent waveguide platform. The SEL operates continuous wave (C.W.) up to 105degC with a threshold current of 30 mA and a maximum output power of 5.5 mW.
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integrated algainas silicon Evanescent racetrack laser and photodetector
Proceedings of SPIE the International Society for Optical Engineering, 2007Co-Authors: Alexander W Fang, Hyundai Park, Richard Jones, Oded Cohen, Omri Raday, Mario J Paniccia, John E BowersAbstract:Recently, AlGaInAs-silicon Evanescent lasers have been demonstrated as a method of integrating active photonic devices on a silicon based platform. This hybrid waveguide architecture consists of III-V quantum wells bonded to silicon waveguides. The self aligned optical mode leads to a bonding process that is manufacturable in high volumes. Here give an overview of a racetrack resonator laser integrated with two photo-detectors on the hybrid AlGaInAs-silicon Evanescent device platform. Unlike previous demonstrations of hybrid AlGaInAs-silicon Evanescent lasers, we demonstrate an on-chip racetrack resonator laser that does not rely on facet polishing and dicing in order to define the laser cavity. The laser runs continuous-wave (c.w.) at 1590 nm with a threshold of 175 mA, has a maximum total output power of 29 mW and a maximum operating temperature of 60 C. The output of this laser light is directly coupled into a pair of on chip hybrid AlGaInAs-silicon Evanescent photodetectors used to measure the laser output.
Omri Raday - One of the best experts on this subject based on the ideXlab platform.
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single wavelength silicon Evanescent lasers
IEEE Journal of Selected Topics in Quantum Electronics, 2009Co-Authors: Alexander W Fang, M N Sysak, Richard Jones, Omri Raday, Brian R Koch, Erica Lively, Di Liang, John E BowersAbstract:The silicon Evanescent device platform provides electrically pumped active device functionality on a low-loss silicon-on-insulator waveguide platform. We present here recent research in the area of single-wavelength silicon Evanescent lasers that utilize distributed feedback, distributed Bragg reflector (DBR), and sampled grating (SG) DBR laser topographies.
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1310nm silicon Evanescent laser
International Conference on Group IV Photonics, 2007Co-Authors: Hsuhao Chang, Alexander W Fang, M N Sysak, Hyundai Park, Richard Jones, Oded Cohen, Omri Raday, Mario J Paniccia, John E BowersAbstract:An electrically pumped 1310 nm silicon Evanescent laser (SEL) is demonstrated utilizing the hybrid silicon Evanescent waveguide platform. The SEL operates continuous wave (C.W.) up to 105degC with a threshold current of 30 mA and a maximum output power of 5.5 mW.
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integrated algainas silicon Evanescent racetrack laser and photodetector
Proceedings of SPIE the International Society for Optical Engineering, 2007Co-Authors: Alexander W Fang, Hyundai Park, Richard Jones, Oded Cohen, Omri Raday, Mario J Paniccia, John E BowersAbstract:Recently, AlGaInAs-silicon Evanescent lasers have been demonstrated as a method of integrating active photonic devices on a silicon based platform. This hybrid waveguide architecture consists of III-V quantum wells bonded to silicon waveguides. The self aligned optical mode leads to a bonding process that is manufacturable in high volumes. Here give an overview of a racetrack resonator laser integrated with two photo-detectors on the hybrid AlGaInAs-silicon Evanescent device platform. Unlike previous demonstrations of hybrid AlGaInAs-silicon Evanescent lasers, we demonstrate an on-chip racetrack resonator laser that does not rely on facet polishing and dicing in order to define the laser cavity. The laser runs continuous-wave (c.w.) at 1590 nm with a threshold of 175 mA, has a maximum total output power of 29 mW and a maximum operating temperature of 60 C. The output of this laser light is directly coupled into a pair of on chip hybrid AlGaInAs-silicon Evanescent photodetectors used to measure the laser output.
