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Tsukasa Katayama - One of the best experts on this subject based on the ideXlab platform.

  • investigation of Ferrimagnetism and ferroelectricity in alxfe2 xo3 thin films
    Journal of Materials Chemistry C, 2020
    Co-Authors: Badari Narayana Rao, Tsukasa Katayama, Shintaro Yasui, Ayako Taguchi, Hiroki Moriwake, Yosuke Hamasaki, Mitsuru Itoh
    Abstract:

    AlxFe2−xO3 (x-AFO) thin films, belonging to the κ-Al2O3 family, are interesting because they show room temperature Ferrimagnetism and have a polar crystal structure. These types of materials are being studied to observe simultaneous Ferrimagnetism and ferroelectricity, and the possibility of coupling between the two. However, it is difficult to realise ferroelectric properties at room temperature, due to the low resistivity of the films. In this work, we have optimized the synthesis conditions to obtain x-AFO (0.5 ≤ x ≤ 1) thin films with high resistance. While magnetic measurements confirmed room temperature Ferrimagnetism of the films, the maximum magnetization was observed for the composition x = 0.8. In addition, the Curie temperature was found to be influenced by oxygen pressure during deposition. Ferroelectric measurements on the films showed small remnant polarization (∼0.5–2 μC cm−2). In contrast, the predicted polarization from first principles calculations was calculated to be between 21 and 26 μC cm−2. The analysis also suggested that ferroelectric domain-switching occurs through shearing of in-plane oxygen layers. The presence of multiple in-plane domains, which oppose polarization switching of adjacent domains, is suggested to be the cause of the small observed polarization. The magnetocapacitance measurements showed weak magnetic coupling with the capacitance.

  • Investigation of Ferrimagnetism and ferroelectricity in AlxFe2−xO3 thin films
    Journal of Materials Chemistry C, 2020
    Co-Authors: Badari Narayana Rao, Tsukasa Katayama, Shintaro Yasui, Ayako Taguchi, Hiroki Moriwake, Yosuke Hamasaki, Mitsuru Itoh
    Abstract:

    AlxFe2−xO3 (x-AFO) thin films, belonging to the κ-Al2O3 family, are interesting because they show room temperature Ferrimagnetism and have a polar crystal structure. These types of materials are being studied to observe simultaneous Ferrimagnetism and ferroelectricity, and the possibility of coupling between the two. However, it is difficult to realise ferroelectric properties at room temperature, due to the low resistivity of the films. In this work, we have optimized the synthesis conditions to obtain x-AFO (0.5 ≤ x ≤ 1) thin films with high resistance. While magnetic measurements confirmed room temperature Ferrimagnetism of the films, the maximum magnetization was observed for the composition x = 0.8. In addition, the Curie temperature was found to be influenced by oxygen pressure during deposition. Ferroelectric measurements on the films showed small remnant polarization (∼0.5–2 μC cm−2). In contrast, the predicted polarization from first principles calculations was calculated to be between 21 and 26 μC cm−2. The analysis also suggested that ferroelectric domain-switching occurs through shearing of in-plane oxygen layers. The presence of multiple in-plane domains, which oppose polarization switching of adjacent domains, is suggested to be the cause of the small observed polarization. The magnetocapacitance measurements showed weak magnetic coupling with the capacitance.

  • p-Type Conductivity and Room-Temperature Ferrimagnetism in Spinel MoFe2O4 Epitaxial Thin Film
    Crystal Growth & Design, 2018
    Co-Authors: Tsukasa Katayama, Yuji Kurauchi, Akira Chikamatsu, Lyaysan Galiullina, Tetsuya Hasegawa
    Abstract:

    High-quality MoFe2O4 epitaxial films, exhibiting p-type conductivity and room-temperature Ferrimagnetism, were successfully fabricated by a pulsed laser deposition technique. In this experiment, th...

Yanfeng Chen - One of the best experts on this subject based on the ideXlab platform.

  • Significant Ferrimagnetisms observed in superlattice composed of antiferromagnetic LaFeO3 and YMnO3
    Applied Physics Letters, 2013
    Co-Authors: Yulei Chen, Shantao Zhang, Jian Zhou, Shu-hua Yao, Yanfeng Chen
    Abstract:

    A series of LaFeO3/YMnO3 superlattices with various thicknesses are synthesized epitaxially on (001) and (111) SrTiO3 substrates. X-ray diffraction, high-resolution cross-sectional transmission electron microscopy, and sub-nanometer-scale resolved electron energy loss spectroscopy characterizations prove that grown superlattices have designed layer-by-layer structures, and there is atomically sharp interface between two successive constituent layers. Temperature-dependent magnetization and magnetic hysteresis loop measurements substantiate that there is significant Ferrimagnetism generated at LaFeO3/YMnO3 interfaces. The generated Ferrimagnetism is discussed by considering the magnetic structures in each constituent layer.

  • significant Ferrimagnetism observed in aurivillius bi4ti3o12 doped by antiferromagnetic lafeo3
    Applied Physics Letters, 2011
    Co-Authors: Zhong Chen, Y. B. Chen, Shantao Zhang, Jian Zhou, Yongyuan Zhu, Yanfeng Chen
    Abstract:

    Highly crystalline quality c-axis epitaxial nLaFeO3–Bi4Ti3O12 (n=0.5,1.0,1.5) thin films were deposited on SrTiO3 (001) substrates by pulsed laser deposition. The x-ray diffraction and transmission electron microscopy characterizations confirm that there are designed even-odd number perovskite-block structures in n=0.5 and 1.5 films while it has even-even number ones in n=1.0 films. The remarkable physical property of n=0.5 and 1.5 samples is the presence of Ferrimagnetism even up to room temperature. While it is antiferromagentic property in n=1.0 sample. The observed ferrimagentism is explained qualitatively by considering the crystal structure in nLaFeO3–Bi4Ti3O12.

Mitsuru Itoh - One of the best experts on this subject based on the ideXlab platform.

  • investigation of Ferrimagnetism and ferroelectricity in alxfe2 xo3 thin films
    Journal of Materials Chemistry C, 2020
    Co-Authors: Badari Narayana Rao, Tsukasa Katayama, Shintaro Yasui, Ayako Taguchi, Hiroki Moriwake, Yosuke Hamasaki, Mitsuru Itoh
    Abstract:

    AlxFe2−xO3 (x-AFO) thin films, belonging to the κ-Al2O3 family, are interesting because they show room temperature Ferrimagnetism and have a polar crystal structure. These types of materials are being studied to observe simultaneous Ferrimagnetism and ferroelectricity, and the possibility of coupling between the two. However, it is difficult to realise ferroelectric properties at room temperature, due to the low resistivity of the films. In this work, we have optimized the synthesis conditions to obtain x-AFO (0.5 ≤ x ≤ 1) thin films with high resistance. While magnetic measurements confirmed room temperature Ferrimagnetism of the films, the maximum magnetization was observed for the composition x = 0.8. In addition, the Curie temperature was found to be influenced by oxygen pressure during deposition. Ferroelectric measurements on the films showed small remnant polarization (∼0.5–2 μC cm−2). In contrast, the predicted polarization from first principles calculations was calculated to be between 21 and 26 μC cm−2. The analysis also suggested that ferroelectric domain-switching occurs through shearing of in-plane oxygen layers. The presence of multiple in-plane domains, which oppose polarization switching of adjacent domains, is suggested to be the cause of the small observed polarization. The magnetocapacitance measurements showed weak magnetic coupling with the capacitance.

  • Investigation of Ferrimagnetism and ferroelectricity in AlxFe2−xO3 thin films
    Journal of Materials Chemistry C, 2020
    Co-Authors: Badari Narayana Rao, Tsukasa Katayama, Shintaro Yasui, Ayako Taguchi, Hiroki Moriwake, Yosuke Hamasaki, Mitsuru Itoh
    Abstract:

    AlxFe2−xO3 (x-AFO) thin films, belonging to the κ-Al2O3 family, are interesting because they show room temperature Ferrimagnetism and have a polar crystal structure. These types of materials are being studied to observe simultaneous Ferrimagnetism and ferroelectricity, and the possibility of coupling between the two. However, it is difficult to realise ferroelectric properties at room temperature, due to the low resistivity of the films. In this work, we have optimized the synthesis conditions to obtain x-AFO (0.5 ≤ x ≤ 1) thin films with high resistance. While magnetic measurements confirmed room temperature Ferrimagnetism of the films, the maximum magnetization was observed for the composition x = 0.8. In addition, the Curie temperature was found to be influenced by oxygen pressure during deposition. Ferroelectric measurements on the films showed small remnant polarization (∼0.5–2 μC cm−2). In contrast, the predicted polarization from first principles calculations was calculated to be between 21 and 26 μC cm−2. The analysis also suggested that ferroelectric domain-switching occurs through shearing of in-plane oxygen layers. The presence of multiple in-plane domains, which oppose polarization switching of adjacent domains, is suggested to be the cause of the small observed polarization. The magnetocapacitance measurements showed weak magnetic coupling with the capacitance.

Badari Narayana Rao - One of the best experts on this subject based on the ideXlab platform.

  • investigation of Ferrimagnetism and ferroelectricity in alxfe2 xo3 thin films
    Journal of Materials Chemistry C, 2020
    Co-Authors: Badari Narayana Rao, Tsukasa Katayama, Shintaro Yasui, Ayako Taguchi, Hiroki Moriwake, Yosuke Hamasaki, Mitsuru Itoh
    Abstract:

    AlxFe2−xO3 (x-AFO) thin films, belonging to the κ-Al2O3 family, are interesting because they show room temperature Ferrimagnetism and have a polar crystal structure. These types of materials are being studied to observe simultaneous Ferrimagnetism and ferroelectricity, and the possibility of coupling between the two. However, it is difficult to realise ferroelectric properties at room temperature, due to the low resistivity of the films. In this work, we have optimized the synthesis conditions to obtain x-AFO (0.5 ≤ x ≤ 1) thin films with high resistance. While magnetic measurements confirmed room temperature Ferrimagnetism of the films, the maximum magnetization was observed for the composition x = 0.8. In addition, the Curie temperature was found to be influenced by oxygen pressure during deposition. Ferroelectric measurements on the films showed small remnant polarization (∼0.5–2 μC cm−2). In contrast, the predicted polarization from first principles calculations was calculated to be between 21 and 26 μC cm−2. The analysis also suggested that ferroelectric domain-switching occurs through shearing of in-plane oxygen layers. The presence of multiple in-plane domains, which oppose polarization switching of adjacent domains, is suggested to be the cause of the small observed polarization. The magnetocapacitance measurements showed weak magnetic coupling with the capacitance.

  • Investigation of Ferrimagnetism and ferroelectricity in AlxFe2−xO3 thin films
    Journal of Materials Chemistry C, 2020
    Co-Authors: Badari Narayana Rao, Tsukasa Katayama, Shintaro Yasui, Ayako Taguchi, Hiroki Moriwake, Yosuke Hamasaki, Mitsuru Itoh
    Abstract:

    AlxFe2−xO3 (x-AFO) thin films, belonging to the κ-Al2O3 family, are interesting because they show room temperature Ferrimagnetism and have a polar crystal structure. These types of materials are being studied to observe simultaneous Ferrimagnetism and ferroelectricity, and the possibility of coupling between the two. However, it is difficult to realise ferroelectric properties at room temperature, due to the low resistivity of the films. In this work, we have optimized the synthesis conditions to obtain x-AFO (0.5 ≤ x ≤ 1) thin films with high resistance. While magnetic measurements confirmed room temperature Ferrimagnetism of the films, the maximum magnetization was observed for the composition x = 0.8. In addition, the Curie temperature was found to be influenced by oxygen pressure during deposition. Ferroelectric measurements on the films showed small remnant polarization (∼0.5–2 μC cm−2). In contrast, the predicted polarization from first principles calculations was calculated to be between 21 and 26 μC cm−2. The analysis also suggested that ferroelectric domain-switching occurs through shearing of in-plane oxygen layers. The presence of multiple in-plane domains, which oppose polarization switching of adjacent domains, is suggested to be the cause of the small observed polarization. The magnetocapacitance measurements showed weak magnetic coupling with the capacitance.

Tetsuya Hasegawa - One of the best experts on this subject based on the ideXlab platform.