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Joerg Appenzeller - One of the best experts on this subject based on the ideXlab platform.

  • fetram an organic Ferroelectric Material based novel random access memory cell
    Nano Letters, 2011
    Co-Authors: Joerg Appenzeller
    Abstract:

    Science and technology in the electronics area have always been driven by the development of Materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines Materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic Ferroelectric polymer—PVDF-TrFE—into a new Ferroelectric transistor architecture. Our new cell, the Ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art Ferroelectric random access memories (FeRAMs) in that it utilizes a Ferroelectric Material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell...

  • FETRAM. An organic Ferroelectric Material based novel random access memory cell
    Nano Letters, 2011
    Co-Authors: Saptarshi Das, Joerg Appenzeller
    Abstract:

    Science and technology in the electronics area have always been driven by the development of Materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines Materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic Ferroelectric polymer-PVDF-TrFE-into a new Ferroelectric transistor architecture. Our new cell, the Ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art Ferroelectric random access memories (FeRAMs) in that it utilizes a Ferroelectric Material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a Ferroelectric transistor instead of a capacitor-the scheme commonly employed in conventional FeRAMs.

A Gukasov - One of the best experts on this subject based on the ideXlab platform.

  • electric field induced spin flop in bifeo3 single crystals at room temperature
    Physical Review Letters, 2008
    Co-Authors: D Lebeugle, D Colson, Anne Forget, M Viret, A M Bataille, A Gukasov
    Abstract:

    : Bismuth ferrite, BiFeO3, is the only known room-temperature magnetic Ferroelectric Material. We demonstrate here, using neutron scattering measurements in high quality single crystals, that the antiferromagnetic and Ferroelectric order parameters are intimately coupled. Initially in a single Ferroelectric state, our crystals have a canted antiferromagnetic structure describing a unique cycloid. Under electrical poling, polarization reorientation induces a spin flop. We argue here that the coupling between the two orders may be stronger in the bulk than in thin films where the cycloid is absent.

Saptarshi Das - One of the best experts on this subject based on the ideXlab platform.

  • FETRAM. An organic Ferroelectric Material based novel random access memory cell
    Nano Letters, 2011
    Co-Authors: Saptarshi Das, Joerg Appenzeller
    Abstract:

    Science and technology in the electronics area have always been driven by the development of Materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines Materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic Ferroelectric polymer-PVDF-TrFE-into a new Ferroelectric transistor architecture. Our new cell, the Ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art Ferroelectric random access memories (FeRAMs) in that it utilizes a Ferroelectric Material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a Ferroelectric transistor instead of a capacitor-the scheme commonly employed in conventional FeRAMs.

Andrew M Rappe - One of the best experts on this subject based on the ideXlab platform.

  • first principles investigation of the highly tetragonal Ferroelectric Material bi zn 1 2 ti 1 2 o 3
    Physical Review B, 2009
    Co-Authors: Tingting Qi, Ilya Grinberg, Andrew M Rappe
    Abstract:

    First-principles calculations were performed to study the extremely tetragonal Ferroelectric Material $\text{Bi}({\text{Zn}}_{1/2}{\text{Ti}}_{1/2}){\text{O}}_{3}$ (BZT). In agreement with experiment, we find that BZT displays extremely large cation displacements and tetragonality. Despite its high tetragonality and polarization, the local structure of the Material exhibits a high degree of local disorder which is more typical of the solid solutions close to the morphotropic phase boundary. For the tetragonal phase of BZT, we show that a planar ordered (001) $B$-cation arrangement with the Zn and Ti stacking direction perpendicular to direction of $P$ is the lowest in energy, in contrast with the (111) $B$-cation ordering usually found in perovskites. We attribute this unusual preference to the large cation displacements found in BZT, which raises the importance of $A\text{\ensuremath{-}}B$ cation repulsive interactions, favoring separation of Zn and Ti cations.

  • Reversible chemical switching of a Ferroelectric film.
    Physical Review Letters, 2009
    Co-Authors: R.-v. Wang, Dillon D. Fong, F. Jiang, Matthew J. Highland, Paul H. Fuoss, Carol Thompson, Alexie M. Kolpak, Jeffrey A. Eastman, S. K. Streiffer, Andrew M Rappe
    Abstract:

    According to recent experiments and predictions, the orientation of the polarization at the surface of a Ferroelectric Material can affect its surface chemistry. Here we demonstrate the converse effect: the chemical environment can control the polarization orientation in a Ferroelectric film. In situ synchrotron x-ray scattering measurements show that high or low oxygen partial pressure induces outward or inward polarization, respectively, in an ultrathin ${\mathrm{PbTiO}}_{3}$ film. Ab initio calculations provide insight into surface structure changes observed during chemical switching.

Hiroshi Ishiwara - One of the best experts on this subject based on the ideXlab platform.

  • new Ferroelectric Material for embedded fram lsis
    Fujitsu Scientific & Technical Journal, 2007
    Co-Authors: Kenji Maruyama, Masao Kondo, Sushil Kumar Singh, Hiroshi Ishiwara
    Abstract:

    The strong growth of information network infrastructures in our society has enabled personal authentication services for electronic money systems and ticketless transportation services to become firmly established. Secure, high-speed, and low power consumption nonvolatile memories will be required for mobile devices used with smart RFID tags and secure IC cards. Ferroelectric random access memory (FRAM) is one of the best choices for these applications. Market needs must be paid attention for these mobile and secure applications. In FRAM research and development, we pursue scalability for increased memory capacity, unlimited read/write cycles, and a wider range of operating voltage, as well as to improve the conventional features of FRAM, we introduce a new Ferroelectric Material that will enable us to fabricate FRAM in a 90-nm technology node and beyond, by focusing on its superior characteristics. We also describe our plans to commercially produce FRAM devices in the near future.

  • crystal structure and Ferroelectric properties of bi la 4 ti si 3o12 as a bulk Ferroelectric Material
    Solid State Communications, 2003
    Co-Authors: Yasushi Idemoto, Takahiro Miyahara, Nobuyuki Koura, Takeshi Kijima, Hiroshi Ishiwara
    Abstract:

    Abstract We investigated the crystal structure, physical properties and Ferroelectric performance of bulk Material obtained by mixing and sintering Bi 3.25 La 0.75 Ti 3 O 12 and Bi 4 Si 3 O 12 or Bi 2 SiO 5 for use as a novel Ferroelectric Material for Ferroelectric memory. The resulting Material was identified as a structure whereby, all of the peaks, as determined by powder X-ray and neutron diffraction, were the same as Bi 3.25 La 0.75 Ti 3 O 12 , and thus a single phase was obtained. Moreover, we investigated the crystal structure of the Material by neutron diffraction, and the obtained results suggested that Si is substituted on Ti sites. The resulting Material was investigated by SEM, and grains grown relative to Bi 3.25 La 0.75 Ti 3 O 12 were observed. Based on P–E hysteresis measurements, this sample has a high remanent polarization ( P r ) and a low coercive field ( E c ) relative to Bi 3.25 La 0.75 Ti 3 O 12 , as well as improved overall Ferroelectric characteristics.