The Experts below are selected from a list of 15384 Experts worldwide ranked by ideXlab platform
Zhong Lin Wang - One of the best experts on this subject based on the ideXlab platform.
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enhanced photovoltaic performances of la doped bismuth ferrite zinc oxide heterojunction by coupling piezo phototronic effect and Ferroelectricity
ACS Nano, 2020Co-Authors: Yuanzheng Zhang, Zhong Lin Wang, Liya Yang, Yaju Zhang, Zhenyu Ding, Yan Zhou, Chunli Diao, Haiwu Zheng, Xingfu WangAbstract:Ferroelectric materials have drawn widespread attention due to their switchable spontaneous polarization and anomalous photovoltaic effect. The coupling between Ferroelectricity and the piezo-photo...
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Ferroelectricity enhanced piezo phototronic effect in 2d v doped zno nanosheets
Advanced Science, 2019Co-Authors: Yejing Dai, Zhihao Zhao, Zhong Lin WangAbstract:Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo-phototronic effect may bring unprecedented functional characteristics. Here, a heterojunction photodetector made of p-Si/V-doped-ferroelectric-ZnO 2D nanosheets (FESZ-PD) is fabricated, and the Ferroelectricity-enhanced piezo-phototronic effect on the photoresponse behavior of the FESZ-PD is carefully investigated. By introducing the Ferroelectricity and the piezo-phototronic effect, improved current rectification performance is achieved and the photoresponse performance of the heterojunction is enhanced in a broad spectral range. The applied voltage bias during measurement naturally causes ferroelectric spontaneous polarizations to align, resulting in a change in band structure near the interface and the local piezo-phototronic effect. The modulated energy band promotes the generation, separation, and transportation efficiency of photogenerated carriers greatly. Compared with the Si/ZnO 2D nanosheets photodetector without Ferroelectricity under strain-free conditions, the photoresponsivity R of the FESZ-PD increases by 2.4 times when applying a -0.20‰ compressive strain at +1 V forward bias. These results confirm the feasibility of coupling the Ferroelectricity with the piezo-phototronic effect in 2D ferroelectric materials to enhance the photoresponse behavior, which provides a good way to enable the development of high-performance electronic and optoelectronic devices.
Yejing Dai - One of the best experts on this subject based on the ideXlab platform.
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Ferroelectricity enhanced piezo phototronic effect in 2d v doped zno nanosheets
Advanced Science, 2019Co-Authors: Yejing Dai, Zhihao Zhao, Zhong Lin WangAbstract:Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo-phototronic effect may bring unprecedented functional characteristics. Here, a heterojunction photodetector made of p-Si/V-doped-ferroelectric-ZnO 2D nanosheets (FESZ-PD) is fabricated, and the Ferroelectricity-enhanced piezo-phototronic effect on the photoresponse behavior of the FESZ-PD is carefully investigated. By introducing the Ferroelectricity and the piezo-phototronic effect, improved current rectification performance is achieved and the photoresponse performance of the heterojunction is enhanced in a broad spectral range. The applied voltage bias during measurement naturally causes ferroelectric spontaneous polarizations to align, resulting in a change in band structure near the interface and the local piezo-phototronic effect. The modulated energy band promotes the generation, separation, and transportation efficiency of photogenerated carriers greatly. Compared with the Si/ZnO 2D nanosheets photodetector without Ferroelectricity under strain-free conditions, the photoresponsivity R of the FESZ-PD increases by 2.4 times when applying a -0.20‰ compressive strain at +1 V forward bias. These results confirm the feasibility of coupling the Ferroelectricity with the piezo-phototronic effect in 2D ferroelectric materials to enhance the photoresponse behavior, which provides a good way to enable the development of high-performance electronic and optoelectronic devices.
Young Sun - One of the best experts on this subject based on the ideXlab platform.
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Low magnetic field reversal of electric polarization in a Y-type hexaferrite
Applied Physics Letters, 2012Co-Authors: Fen Wang, Li-qin Yan, Tao Zou, Yi Liu, Young SunAbstract:We report on the magnetically tunable Ferroelectricity and giant magnetoelectric sensitivity up to 250 K in a Y-type hexaferrite, BaSrCoZnFe11AlO22. Not only the magnitude but also the sign of electric polarization can be effectively controlled by applying low magnetic fields (a few hundreds of Oe) that modifies the spiral magnetic structures. The magnetically induced Ferroelectricity is stabilized even in zero magnetic field. Decayless reproducible flipping of electric polarization by oscillating low magnetic fields is shown. The maximum linear magnetoelectric coefficient reaches a high value of ∼3.0 × 103 ps/m at 200 K.
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low magnetic field reversal of electric polarization in a y type hexaferrite
arXiv: Materials Science, 2011Co-Authors: Fen Wang, Li-qin Yan, Tao Zou, Yi Liu, Young SunAbstract:Magnetoelectric multiferroics in which Ferroelectricity and magnetism coexist have attracted extensive attention because they provide great opportunities for the mutual control of electric polarization by magnetic fields and magnetization by electric fields. From a practical point view, the main challenge in this field is to find proper multiferroic materials with a high operating temperature and great magnetoelectric sensitivity. Here we report on the magnetically tunable Ferroelectricity and the giant magnetoelectric sensitivity up to 250 K in a Y-type hexaferrite, BaSrCoZnFe11AlO22. Not only the magnitude but also the sign of electric polarization can be effectively controlled by applying low magnetic fields (a few hundreds of Oe) that modifies the spiral magnetic structures. The magnetically induced Ferroelectricity is stabilized even in zero magnetic field. Decayless reproducible flipping of electric polarization by oscillating low magnetic fields is shown. The maximum linear magnetoelectric coefficient reaches a high value of ~ 3.0\times10^3 ps/m at 200 K.
Zhuo Wang - One of the best experts on this subject based on the ideXlab platform.
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Effects of Individual Layer Thickness on the Structure and Electrical Properties of Sol–Gel‐Derived Ba0.8Sr0.2TiO3 Thin Films
Journal of the American Ceramic Society, 2004Co-Authors: Jiangong Cheng, Xiangjian Meng, Jun Tang, Shao-ling Guo, Junhao Chu, Min Wang, Hong Wang, Zhuo WangAbstract:Ba 0.8 Sr 0.2 TiO 3 thin films were prepared with various individual layer thicknesses using a sol-gel process. The individual layer thickness strongly affected the structure, Ferroelectricity, and dielectric properties of the films. The films prepared with an individual layer thickness of 60 nm showed small equiaxed grains, cubic structure, temperature-independent dielectric constant, and no Ferroelectricity. The films prepared with an individual layer thickness of 8 nm showed columnar grains, tetragonal structure, good Ferroelectricity, and two dielectric peaks in the dielectric constant-temperature curve. The individual layer thickness for layer-by-layer homoepitaxy growth that resulted in columnar grains was
Maxim Mostovoy - One of the best experts on this subject based on the ideXlab platform.
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Highly tunable magnetic spirals and electric polarization in Gd0.5Dy0.5MnO3
Physical Review Materials, 2019Co-Authors: Rabindranath Bag, Maxim Mostovoy, Surjeet Singh, Fabio Orlandi, Pascal Manuel, Sean Langridge, Milan K. Sanyal, C. N. R. Rao, A. SundaresanAbstract:Recent progress in the field of multiferroics led to the discovery of many new materials in which Ferroelectricity is induced by cycloidal spiral orders. The direction of the electric polarization is typically constrained by spin anisotropies and magnetic field. Here, we report that the mixed rare-earth manganite, Gd0.5Dy0.5MnO3, exhibits a spontaneous electric polarization along a general direction in the crystallographic ac plane, which is suppressed below 10 K but reemerges in an applied magnetic field. Neutron-diffraction measurements show that the polarization direction results from a large tilt of the spiral plane with respect to the crystallographic axes and that the suppression of Ferroelectricity is caused by the transformation of a cycloidal spiral into a helical one, a unique property of this rare-earth manganite. The freedom in the orientation of the spiral plane allows for a fine magnetic control of Ferroelectricity, i.e., a rotation as well as a strong enhancement of the polarization depending on the magnetic-field direction. We show that this unusual behavior originates from the coupling between the transition-metal and rare-earth magnetic subsystems.
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Multiferroics: A magnetic twist for Ferroelectricity
Nature Materials, 2007Co-Authors: Sang-wook Cheong, Maxim MostovoyAbstract:Magnetism and Ferroelectricity are essential to many forms of current technology, and the quest for multiferroic materials, where these two phenomena are intimately coupled, is of great technological and fundamental importance. Ferroelectricity and magnetism tend to be mutually exclusive and interact weakly with each other when they coexist. The exciting new development is the discovery that even a weak magnetoelectric interaction can lead to spectacular cross-coupling effects when it induces electric polarization in a magnetically ordered state. Such magnetic Ferroelectricity, showing an unprecedented sensitivity to ap plied magnetic fields, occurs in 'frustrated magnets' with competing interactions between spins and complex magnetic orders. We summarize key experimental findings and the current theoretical understanding of these phenomena, which have great potential for tuneable multifunctional devices.
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Ferroelectricity in spiral magnets
Physical Review Letters, 2006Co-Authors: Maxim MostovoyAbstract:It was recently observed that the ferroelectrics showing the strongest sensitivity to an applied magnetic field are spiral magnets. We present a phenomenological theory of inhomogeneous ferroelectric magnets, which describes their thermodynamics and magnetic field behavior, e.g., dielectric susceptibility anomalies at magnetic transitions and sudden flops of electric polarization in an applied magnetic field. We show that electric polarization can also be induced at domain walls and that magnetic vortices carry electric charge.