The Experts below are selected from a list of 234 Experts worldwide ranked by ideXlab platform

Harry A Atwater - One of the best experts on this subject based on the ideXlab platform.

G J Bauhuis - One of the best experts on this subject based on the ideXlab platform.

  • Thin-Film iii–v solar Cells using epitaxial lift-off
    High-Efficiency Solar Cells, 2013
    Co-Authors: G J Bauhuis, Peter Mulder, John J. Schermer
    Abstract:

    Epitaxial lift-off is used to create thin-Film III–V solar Cells without sacrificing the GaAs wafer. It is based on selective etching of an AlAs release layer between the wafer and the Cell structure using an HF solution. The wafer can be reused for subsequent deposition runs thereby reducing the cost of the Cells. The thin-Film Cell can be transferred to any new carrier, e.g. glass, plastic, silicon, or metal foil. Although epitaxial lift-off was first demonstrated in 1978, it took until the 1990s to make significant progress in understanding the process and devising new ways to increase the etch rate. The first single-junction epitaxial lift-off Cells were made in 1996. Thin-Film Cells offer new Cell applications based on their flexibility, low weight, and possibility to deposit the Cell structure in reverse order. Today the world record for single-junction Cells is held by a thin-Film GaAs Cell, who’s performance is partly based on the increased photonrecycling factor in Cells with a back contact acting as a mirror. Also state of the art tandem and inverted metamorphic thin-Film Cells have been demonstrated.

  • 26 1 thin Film gaas solar Cell using epitaxial lift off
    Solar Energy Materials and Solar Cells, 2009
    Co-Authors: G J Bauhuis, P Mulder, E J Haverkamp, Jccm Boukje Huijben, J J Schermer
    Abstract:

    The epitaxial lift-off technique can be used to separate a III–V solar Cell structure from its underlying GaAs substrate. Processing a thin-Film Cell is somewhat different from a regular Cell on substrate. In this work a number of critical issues, e.g., a low-temperature anneal front contact and the metal mirror on backside of the thin-Film are optimized. Together with an improved active layer material quality, grid mask and anti-reflection coating this leads to thin-Film Cells as good as Cells on a substrate, with record efficiencies for single junction GaAs solar Cells of 26.1% for both Cell types.

  • Thin Film GaAs solar Cells with increased quantum efficiency due to light reflection
    Solar Energy Materials and Solar Cells, 2004
    Co-Authors: G J Bauhuis, John J. Schermer, Peter Mulder, M.m.a.j. Voncken, P.k. Larsen
    Abstract:

    Thin Film GaAs solar Cells, separated from their substrate using the weight-induced epitaxial lift-off technique, were compared with conventional Cells on a substrate. The thin Film Cells can be illuminated from both sides using a mirror. The thickness of the p-type GaAs layer, which is the base layer for front illumination and the emitter layer for rear illumination, was varied between 0.25 and 2.5 mum. For both front and rear illumination, the Cell efficiency shows a maximum at a thickness of 1.5 mum. The rear illuminated Cell current is only 10% lower than for front illumination. Light reflection in the thin Film Cell enhances the external quantum efficiency and the collection efficiency in the higher wavelength region from 0.84 to 0.90 and from 0.82 to 0.95, respectively. (C) 2003 Elsevier B.V. All rights reserved.

Jonathan Grandidier - One of the best experts on this subject based on the ideXlab platform.

J J Schermer - One of the best experts on this subject based on the ideXlab platform.

  • 26 1 thin Film gaas solar Cell using epitaxial lift off
    Solar Energy Materials and Solar Cells, 2009
    Co-Authors: G J Bauhuis, P Mulder, E J Haverkamp, Jccm Boukje Huijben, J J Schermer
    Abstract:

    The epitaxial lift-off technique can be used to separate a III–V solar Cell structure from its underlying GaAs substrate. Processing a thin-Film Cell is somewhat different from a regular Cell on substrate. In this work a number of critical issues, e.g., a low-temperature anneal front contact and the metal mirror on backside of the thin-Film are optimized. Together with an improved active layer material quality, grid mask and anti-reflection coating this leads to thin-Film Cells as good as Cells on a substrate, with record efficiencies for single junction GaAs solar Cells of 26.1% for both Cell types.

J.b. Bates - One of the best experts on this subject based on the ideXlab platform.

  • Lithium silicon tin oxynitride (LiySiTON): High-performance anode in thin-Film lithium-ion batteries for microelectronics
    Journal of Power Sources, 1999
    Co-Authors: Bernd J Neudecker, R. A. Zuhr, J.b. Bates
    Abstract:

    A lithium-ion thin-Film battery, consisting of the amorphous silicon tin oxynitride anode ('SiTON'), the amorphous lithium phosphorus oxynitride electrolyte ('Lipon'), and a crystalline LiCoO2 cathode, can be heated at 250°C in air for 1 h which exceeds by far the required solder reflow conditions for electronic circuit assembly. Moreover, the performance of such a battery was found to even improve after the heat treatment. The LiySiTON profile between 0 and 1.2 V vs. Li was determined in SiTON/Lipon/LiCoO2 lithium-ion thin-Film Cells equipped with a Li metal reference electrode. By comparison with a Sn3N4/Lipon/LiCoO2 three-electrode lithium-ion thin-Film Cell, a model for the electrochemical insertion/extraction process of LiySiTON was suggested. The SiTON/Lipon/LiCoO2 Cells sustained 5 mA/cm2 between 4.2 and 2.7 V while the anode supplied a reversible discharge capacity of about 340 μA h/mg or even 450 μA h/mg after heating at 250°C in air for 1 h. A long-term cycling stability test of a SiTON/Lipon/LiCoO2 battery between 3.93 and 2.7 V demonstrated that the LiySiTON capacity faded only by 0.001% per cycle when charging was stopped as soon as the LiySiTON potential reached 0 V vs. Li. When this cathode-heavy Cell was charged to 4.1 V (LiySiTON at 0 V vs. Li), a significantly higher reversible discharge capacity was obtained over ∼ 5000 cycles. © 1999 Elsevier Science S.A. All rights reserved.

  • New amorphous thin-Film lithium electrolyte and rechargeable microbattery
    IEEE 35th International Power Sources Symposium, 1992
    Co-Authors: J.b. Bates, G.r. Gruzalski, N.j. Dudney, C.f. Luck
    Abstract:

    Sputtering of Li/sub 3/PO/sub 4/ in pure N/sub 2/ results in the formation of an amorphous lithium electrolyte that is suitable in contact with lithium and has electrical properties that are suitable for application in a thin-Film Cell. Thin-Film rechargeable lithium Cells have been fabricated and characterized using this electrolyte between a lithium anode and an amorphous vanadium oxide cathode. The open circuit voltage of the Cell is 3.6 to 3.7 V, and it has a capacity of 130 mu Ah/cm/sup 2/ when discharged to 1.5 V. The AC impedance of the Cells measured at different stages of discharge indicate a significant decrease in internal resistance at about the midpoint of the discharge.