The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform

Nicolas Gherardi - One of the best experts on this subject based on the ideXlab platform.

  • atmospheric pressure low temperature direct plasma technology status and challenges for thin Film Deposition
    Plasma Processes and Polymers, 2012
    Co-Authors: Françoise Massines, Christian Sarrabournet, Fiorenza Fanelli, Nicolas Gherardi, Nicolas Naude
    Abstract:

    Over the last ten years, expansion of atmospheric pressure plasma solutions for surface treatment of materials has been remarkable, however direct plasma technology for thin Film Deposition needs still great effort. The objective of this paper is to establish the state of the art on scientific and technologic locks, which have to be opened to consider direct atmospheric pressure plasma-enhanced chemical vapor Deposition (AP-PECVD) a viable option for industrial application. Basic scientific principles to understand and optimize an AP-PECVD process are summarized. Laboratory reactor configurations are reviewed. Reference points for the design and use of AP-PECVD reactors according to the desired thin Film properties are given. Finally, solutions to avoid powder formation and to increase the thin Film growth rate are discussed.

Taekmo Chung - One of the best experts on this subject based on the ideXlab platform.

  • ruthenocene precursors for ruthenium containing thin Film Deposition an example of solvent nucleophilic attack on fulvene
    Organometallics, 2017
    Co-Authors: Eun Ae Jung, Sheby Mary George, Bo Keun Park, Taekmo Chung
    Abstract:

    A new series of ruthenocene complexes were prepared from RuCl3·xH2O and 6,6-dimethylfulvene as potential precursors for thin-Film Deposition. The formation of these complexes was the result of an unforeseen nucleophilic attack of the solvent molecules (alcohols/amines) on the 6,6-dimethylfulvene ligand during the reaction. Complexes [RuII(C5H4C(CH3)2OCH3)2] (1), [RuII(C5H4C(CH3)2OC2H5)2] (2), [RuII(C5H4C(CH3)2N(CH3)2)2] (3), and [RuII(C5H4C(CH3)2N(CH2CH3)2)2] (4) were isolated in pure form and characterized by Fourier transform (FT) infrared and FT nuclear magnetic resonance spectroscopy as well as elemental and thermogravimetric (TG) analyses. Crystallographic studies of complexes 1–3 revealed a monomeric ruthenocene structure for all complexes and showed that the deprotonated alkylalkoxide or dialkylamide of the solvent molecule was attached to the exocyclic carbon of the fulvene ligand. Although the complexes were formed as ruthenocenes instead of the expected ruthenium fulvene complexes, they all disp...

  • Ruthenocene Precursors for Ruthenium-Containing Thin-Film Deposition: An Example of Solvent Nucleophilic Attack on Fulvene
    2017
    Co-Authors: Eun Ae Jung, Sheby Mary George, Bo Keun Park, Seong Ho Han, Ga Yeon Lee, Jeong Hwan Han, Seung Uk Son, Chang Gyoun Kim, Taekmo Chung
    Abstract:

    A new series of ruthenocene complexes were prepared from RuCl3·xH2O and 6,6-dimethylfulvene as potential precursors for thin-Film Deposition. The formation of these complexes was the result of an unforeseen nucleophilic attack of the solvent molecules (alcohols/amines) on the 6,6-dimethylfulvene ligand during the reaction. Complexes [RuII(C5H4C­(CH3)2OCH3)2] (1), [RuII(C5H4C­(CH3)2OC2H5)2] (2), [RuII(C5H4C­(CH3)2N­(CH3)2)2] (3), and [RuII(C5H4C­(CH3)2N­(CH2CH3)2)2] (4) were isolated in pure form and characterized by Fourier transform (FT) infrared and FT nuclear magnetic resonance spectroscopy as well as elemental and thermogravimetric (TG) analyses. Crystallographic studies of complexes 1–3 revealed a monomeric ruthenocene structure for all complexes and showed that the deprotonated alkylalkoxide or dialkylamide of the solvent molecule was attached to the exocyclic carbon of the fulvene ligand. Although the complexes were formed as ruthenocenes instead of the expected ruthenium fulvene complexes, they all displayed excellent stabilities and thermal properties. In particular, complexes 3 and 4 emerged as the best compounds owing to their clean TGA plot and excellent volatility, holding the potential as precursors for thin-Film Deposition

Chun-wei Chen - One of the best experts on this subject based on the ideXlab platform.

  • maximum withdrawal speed for langmuir blodgett Film Deposition of arachidic acid
    Journal of Colloid and Interface Science, 2006
    Co-Authors: Chun-wei Chen
    Abstract:

    Abstract The maximum withdrawal speed of Langmuir–Blodgett (LB) Film Deposition of arachidic acid (AA) was investigated. The quality of LB deposited Film was determined by the transfer ratio (TR), together with measurements of surface roughness using atomic force microscopy (AFM). A Langmuir mini-trough was used to provide the surface pressure versus molecular area ( π – A ) curves and a flow visualization technique was applied to estimate the dynamic contact angles and to observe the fluid motion. The effects of hydrophobic and hydrophilic substrates, pH and the addition of four different ions, i.e., K+, Ba2+, Cd2+, and Al3+, on the withdrawal speed were examined. The “transition point” from liquid to solid states on the π – A curve provided a clear indication of the maximum withdrawal speed. The lower the transition point, the higher was the maximum withdrawal speed. Stable Deposition was possible only if the pH of the solution was maintained in a narrow range. The observation of dynamic contact angles and fluid motion, particularly the movement of air–liquid interface, was consistent with previous findings. Owing to the “soap effect” of the divalent ions Ba2+ and Cd2+, the maximum speed for successful LB Film Deposition without significant water entrainment could be extended substantially with the addition of divalent ions.

Sungeon Park - One of the best experts on this subject based on the ideXlab platform.

  • metallorganic chemical vapor Deposition of ru and ruo2 using ruthenocene precursor and oxygen gas
    Journal of The Electrochemical Society, 2000
    Co-Authors: Sungeon Park
    Abstract:

    Thin Films of Ru and were deposited using ruthenocene and oxygen as a precursor and reaction gas, respectively. Two phases, Ru and , could be deposited using the same source and reaction gas. The phase of the as‐deposited Film was found to be critically dependent on the Deposition process parameters such as precursor partial pressure, oxygen partial pressure, and substrate temperature. A decrease in precursor partial pressure by either reducing carrier gas flow rate or bubbler temperature led to formation while a decrease in oxygen partial pressure resulted in Ru formation. It was also identified that there exists a substrate temperature range in which a Ru Film is deposited at a given processing condition. When the temperature is either higher or lower than this temperature range, Film Deposition results. From careful analysis of the Film Deposition rate in conjunction with the evolution of the Film phase, we conclude that Film Deposition occurs by two independent processes. One is the source gas decomposition process resulting in Ru Film Deposition, and the other is the oxidation of the Ru Film resulting in Deposition. © 2000 The Electrochemical Society. All rights reserved.

Johanna Rosen - One of the best experts on this subject based on the ideXlab platform.

  • vacuum arc plasma generation and thin Film Deposition from a tib2 cathode
    Applied Physics Letters, 2015
    Co-Authors: Igor Zhirkov, Andrejs Petruhins, Lars-Åke Näslund, Szilard Kolozsvari, Peter Polcik, Johanna Rosen
    Abstract:

    We have studied the utilization of TiB2 cathodes for thin Film Deposition in a DC vacuum arc system. We present a route for attaining a stable, reproducible, and fully ionized plasma flux of Ti and B by removal of the external magnetic field, which leads to dissipation of the vacuum arc discharge and an increased active surface area of the cathode. Applying a magnetic field resulted in instability and cracking, consistent with the previous reports. Plasma analysis shows average energies of 115 and 26 eV, average ion charge states of 2.1 and 1.1 for Ti and B, respectively, and a plasma ion composition of approximately 50% Ti and 50% B. This is consistent with measured resulting Film composition from X-ray photoelectron spectroscopy, suggesting a negligible contribution of neutrals and macroparticles to the Film growth. Also, despite the observations of macroparticle generation, the Film surface is very smooth. These results are of importance for the utilization of cathodic arc as a method for synthesis of ...