The Experts below are selected from a list of 306 Experts worldwide ranked by ideXlab platform
James S Speck - One of the best experts on this subject based on the ideXlab platform.
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silver free iii nitride Flip Chip light emitting diode with wall plug efficiency over 70 utilizing a gan tunnel junction
Applied Physics Letters, 2016Co-Authors: Benjamin P. Yonkee, Erin C Young, Shuji Nakamura, Steven P Denbaars, James S SpeckAbstract:A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area Devices. A high extraction package was developed for comparison with Flip Chip Devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a Flip Chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This Flip Chip could increase light extraction over a traditional Flip Chip LED due to the increased reflectivity of the dielectric based mirror.
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Silver free III-nitride Flip Chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
Applied Physics Letters, 2016Co-Authors: Benjamin P. Yonkee, Erin C Young, Shuji Nakamura, Steven P Denbaars, James S SpeckAbstract:A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area Devices. A high extraction package was developed for comparison with Flip Chip Devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a Flip Chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This Flip Chip could increase light extraction over a traditional Flip Chip LED due to the increased reflectivity of the dielectric based mirror.
Benjamin P. Yonkee - One of the best experts on this subject based on the ideXlab platform.
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silver free iii nitride Flip Chip light emitting diode with wall plug efficiency over 70 utilizing a gan tunnel junction
Applied Physics Letters, 2016Co-Authors: Benjamin P. Yonkee, Erin C Young, Shuji Nakamura, Steven P Denbaars, James S SpeckAbstract:A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area Devices. A high extraction package was developed for comparison with Flip Chip Devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a Flip Chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This Flip Chip could increase light extraction over a traditional Flip Chip LED due to the increased reflectivity of the dielectric based mirror.
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Silver free III-nitride Flip Chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
Applied Physics Letters, 2016Co-Authors: Benjamin P. Yonkee, Erin C Young, Shuji Nakamura, Steven P Denbaars, James S SpeckAbstract:A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area Devices. A high extraction package was developed for comparison with Flip Chip Devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a Flip Chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This Flip Chip could increase light extraction over a traditional Flip Chip LED due to the increased reflectivity of the dielectric based mirror.
Katsuya Kikuchi - One of the best experts on this subject based on the ideXlab platform.
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Si-Backside Protection Circuits Against Physical Security Attacks on Flip-Chip Devices
IEEE Journal of Solid-State Circuits, 2020Co-Authors: Takuji Miki, Makoto Nagata, Hiroki Sonoda, Noriyuki Miura, Takaaki Okidono, Yuuki Araga, Naoya Watanabe, Haruo Shimamoto, Katsuya KikuchiAbstract:This article presents a cryptographic key protection technique from physical security attacks through Si-backside of IC Chip. Flip-Chip packaging leads to a serious security hole that allows emerging backside physical security attacks. The proposed backside buried metal (BBM) structure forming a meander wire pattern on the Si-backside detects unexpected disconnection of the meander and warns the malicious attempts to expose a vulnerable Si substrate. Moreover, the BBM meander also shields key information of cryptographic circuit from both passive side-channel attacks and active laser fault injection as well. Unlike other conventional laminate-based protection, this backside monolithic approach does not require frontside wiring resources or additional packaging layers, resulting in only 0.0025% size-overhead. The BBM meander was formed on the backside of a 0.13- $\mu \text{m}$ CMOS cryptographic Chip by wafer-level via-last BBM processing.
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a si backside protection circuits against physical security attacks on Flip Chip Devices
Asian Solid-State Circuits Conference, 2019Co-Authors: Takuji Miki, Makoto Nagata, Hiroki Sonoda, Noriyuki Miura, Takaaki Okidono, Yuuki Araga, Naoya Watanabe, Haruo Shimamoto, Katsuya KikuchiAbstract:Flip-Chip semiconductor packaging reduces the footprint of IC Chips while leads to serious vulnerabilities against emerging backside physical security attacks. The proposed backside buried metal (BBM) structure forming a meander wire pattern on the Si backside detects unexpected disconnection of the meander wire and warns malicious attempts. Besides prevention is also achieved against both passive probing attacks and active laser fault injection as well. Unlike other conventional laminate-based protection, this backside monolithic approach does not require frontside wiring resources or additional packaging layers, resulting in only 0.0025 % area-overhead. The BBM meander was formed on the backside of a 0.13 µn CMOS cryptographic Chip by wafer-level via-last backside buried metal processing.
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A-SSCC - A Si-Backside Protection Circuits Against Physical Security Attacks on Flip-Chip Devices
2019 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2019Co-Authors: Takuji Miki, Makoto Nagata, Hiroki Sonoda, Noriyuki Miura, Takaaki Okidono, Yuuki Araga, Naoya Watanabe, Haruo Shimamoto, Katsuya KikuchiAbstract:Flip-Chip semiconductor packaging reduces the footprint of IC Chips while leads to serious vulnerabilities against emerging backside physical security attacks. The proposed backside buried metal (BBM) structure forming a meander wire pattern on the Si backside detects unexpected disconnection of the meander wire and warns malicious attempts. Besides prevention is also achieved against both passive probing attacks and active laser fault injection as well. Unlike other conventional laminate-based protection, this backside monolithic approach does not require frontside wiring resources or additional packaging layers, resulting in only 0.0025 % area-overhead. The BBM meander was formed on the backside of a 0.13 µn CMOS cryptographic Chip by wafer-level via-last backside buried metal processing.
L.a. Knauss - One of the best experts on this subject based on the ideXlab platform.
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Failure analysis on resistive opens with Scanning SQUID Microscopy
2004 IEEE International Reliability Physics Symposium. Proceedings, 1Co-Authors: Steve K. Hsiung, Daniel J. D. Sullivan, Andrew J. Komrowski, Kevan V. Tan, J. Gaudestad, Antonio Orozco, E. Talanova, L.a. KnaussAbstract:Scanning Super-conducting Quantum Interference Device (SQUID) Microscopy, also known as SSM, is a current density imaging technique that has been used in failure analysis to localize package- and die-level shorts. New developments have extended this technology to localizing resistive opens, augmenting other non-destructive failure analysis tools like TDR and assisting destructive deprocessing by further pin pointing defect locations. A new method to isolate resistive opens with Scanning SQUID microscopy will be presented in this paper, and demonstrated on actual resistive open yield failures in both wire-bond and Flip-Chip Devices.
Shuji Nakamura - One of the best experts on this subject based on the ideXlab platform.
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silver free iii nitride Flip Chip light emitting diode with wall plug efficiency over 70 utilizing a gan tunnel junction
Applied Physics Letters, 2016Co-Authors: Benjamin P. Yonkee, Erin C Young, Shuji Nakamura, Steven P Denbaars, James S SpeckAbstract:A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area Devices. A high extraction package was developed for comparison with Flip Chip Devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a Flip Chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This Flip Chip could increase light extraction over a traditional Flip Chip LED due to the increased reflectivity of the dielectric based mirror.
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Silver free III-nitride Flip Chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
Applied Physics Letters, 2016Co-Authors: Benjamin P. Yonkee, Erin C Young, Shuji Nakamura, Steven P Denbaars, James S SpeckAbstract:A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area Devices. A high extraction package was developed for comparison with Flip Chip Devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a Flip Chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This Flip Chip could increase light extraction over a traditional Flip Chip LED due to the increased reflectivity of the dielectric based mirror.