The Experts below are selected from a list of 267 Experts worldwide ranked by ideXlab platform
Katsuhisa Hirokawa - One of the best experts on this subject based on the ideXlab platform.
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zn drops at a si surface measured by the refracted x ray Fluorescence Method
Journal of Applied Physics, 1991Co-Authors: Y C Sasaki, M Kisimoto, S Nagata, Sadae Yamaguchi, Katsuhisa HirokawaAbstract:Si and Zn are essentially mutually insoluble. We were able to detect Zn drops at a Si surface by using the refracted x‐ray Fluorescence Method when the Si wafer was implanted with Zn ions at 50 keV up to doses of 1 × 1016 cm−2. The presence of the Zn drops at the Si surface was confirmed both by measuring surface roughness and Rutherford‐backscattering spectroscopy spectra.
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Zn drops at a Si surface measured by the refracted x‐ray Fluorescence Method
Journal of Applied Physics, 1991Co-Authors: Y C Sasaki, M Kisimoto, S Nagata, Sadae Yamaguchi, Katsuhisa HirokawaAbstract:Si and Zn are essentially mutually insoluble. We were able to detect Zn drops at a Si surface by using the refracted x‐ray Fluorescence Method when the Si wafer was implanted with Zn ions at 50 keV up to doses of 1 × 1016 cm−2. The presence of the Zn drops at the Si surface was confirmed both by measuring surface roughness and Rutherford‐backscattering spectroscopy spectra.
Y C Sasaki - One of the best experts on this subject based on the ideXlab platform.
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zn drops at a si surface measured by the refracted x ray Fluorescence Method
Journal of Applied Physics, 1991Co-Authors: Y C Sasaki, M Kisimoto, S Nagata, Sadae Yamaguchi, Katsuhisa HirokawaAbstract:Si and Zn are essentially mutually insoluble. We were able to detect Zn drops at a Si surface by using the refracted x‐ray Fluorescence Method when the Si wafer was implanted with Zn ions at 50 keV up to doses of 1 × 1016 cm−2. The presence of the Zn drops at the Si surface was confirmed both by measuring surface roughness and Rutherford‐backscattering spectroscopy spectra.
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Zn drops at a Si surface measured by the refracted x‐ray Fluorescence Method
Journal of Applied Physics, 1991Co-Authors: Y C Sasaki, M Kisimoto, S Nagata, Sadae Yamaguchi, Katsuhisa HirokawaAbstract:Si and Zn are essentially mutually insoluble. We were able to detect Zn drops at a Si surface by using the refracted x‐ray Fluorescence Method when the Si wafer was implanted with Zn ions at 50 keV up to doses of 1 × 1016 cm−2. The presence of the Zn drops at the Si surface was confirmed both by measuring surface roughness and Rutherford‐backscattering spectroscopy spectra.
M Kisimoto - One of the best experts on this subject based on the ideXlab platform.
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zn drops at a si surface measured by the refracted x ray Fluorescence Method
Journal of Applied Physics, 1991Co-Authors: Y C Sasaki, M Kisimoto, S Nagata, Sadae Yamaguchi, Katsuhisa HirokawaAbstract:Si and Zn are essentially mutually insoluble. We were able to detect Zn drops at a Si surface by using the refracted x‐ray Fluorescence Method when the Si wafer was implanted with Zn ions at 50 keV up to doses of 1 × 1016 cm−2. The presence of the Zn drops at the Si surface was confirmed both by measuring surface roughness and Rutherford‐backscattering spectroscopy spectra.
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Zn drops at a Si surface measured by the refracted x‐ray Fluorescence Method
Journal of Applied Physics, 1991Co-Authors: Y C Sasaki, M Kisimoto, S Nagata, Sadae Yamaguchi, Katsuhisa HirokawaAbstract:Si and Zn are essentially mutually insoluble. We were able to detect Zn drops at a Si surface by using the refracted x‐ray Fluorescence Method when the Si wafer was implanted with Zn ions at 50 keV up to doses of 1 × 1016 cm−2. The presence of the Zn drops at the Si surface was confirmed both by measuring surface roughness and Rutherford‐backscattering spectroscopy spectra.
S Nagata - One of the best experts on this subject based on the ideXlab platform.
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zn drops at a si surface measured by the refracted x ray Fluorescence Method
Journal of Applied Physics, 1991Co-Authors: Y C Sasaki, M Kisimoto, S Nagata, Sadae Yamaguchi, Katsuhisa HirokawaAbstract:Si and Zn are essentially mutually insoluble. We were able to detect Zn drops at a Si surface by using the refracted x‐ray Fluorescence Method when the Si wafer was implanted with Zn ions at 50 keV up to doses of 1 × 1016 cm−2. The presence of the Zn drops at the Si surface was confirmed both by measuring surface roughness and Rutherford‐backscattering spectroscopy spectra.
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Zn drops at a Si surface measured by the refracted x‐ray Fluorescence Method
Journal of Applied Physics, 1991Co-Authors: Y C Sasaki, M Kisimoto, S Nagata, Sadae Yamaguchi, Katsuhisa HirokawaAbstract:Si and Zn are essentially mutually insoluble. We were able to detect Zn drops at a Si surface by using the refracted x‐ray Fluorescence Method when the Si wafer was implanted with Zn ions at 50 keV up to doses of 1 × 1016 cm−2. The presence of the Zn drops at the Si surface was confirmed both by measuring surface roughness and Rutherford‐backscattering spectroscopy spectra.
Sadae Yamaguchi - One of the best experts on this subject based on the ideXlab platform.
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zn drops at a si surface measured by the refracted x ray Fluorescence Method
Journal of Applied Physics, 1991Co-Authors: Y C Sasaki, M Kisimoto, S Nagata, Sadae Yamaguchi, Katsuhisa HirokawaAbstract:Si and Zn are essentially mutually insoluble. We were able to detect Zn drops at a Si surface by using the refracted x‐ray Fluorescence Method when the Si wafer was implanted with Zn ions at 50 keV up to doses of 1 × 1016 cm−2. The presence of the Zn drops at the Si surface was confirmed both by measuring surface roughness and Rutherford‐backscattering spectroscopy spectra.
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Zn drops at a Si surface measured by the refracted x‐ray Fluorescence Method
Journal of Applied Physics, 1991Co-Authors: Y C Sasaki, M Kisimoto, S Nagata, Sadae Yamaguchi, Katsuhisa HirokawaAbstract:Si and Zn are essentially mutually insoluble. We were able to detect Zn drops at a Si surface by using the refracted x‐ray Fluorescence Method when the Si wafer was implanted with Zn ions at 50 keV up to doses of 1 × 1016 cm−2. The presence of the Zn drops at the Si surface was confirmed both by measuring surface roughness and Rutherford‐backscattering spectroscopy spectra.