The Experts below are selected from a list of 189 Experts worldwide ranked by ideXlab platform
J S L Wong - One of the best experts on this subject based on the ideXlab platform.
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Effect of implanted fluorine on MOS structures with sputtered SiO2 insulator
Semiconductor Science and Technology, 1994Co-Authors: Emil V. Jelenković, K Y Tong, M C Poon, J S L WongAbstract:Fluorine was introduced by ion implantation into MOS structures with sputtered oxide. After annealing, its effects on the high-frequency C-V curve and Fowler-Nordheim Tunnelling barrier height were studied. An increase of acceptor dopant concentration in the substrate was observed due to the fluorine implantation. The presence of fluorine increased the Fowler-Nordheim Tunnelling barrier height for electron injection from both metal and silicon. The role of fluorine is explained by a physical model similar to that used by Ma, where fluorine is assumed to bond with trivalent silicon trap centres in the sputtered oxide.
Jian Lin - One of the best experts on this subject based on the ideXlab platform.
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Write-once read-many-times memory based on a single layer of Pentacene
IEEE Electron Device Letters, 2009Co-Authors: Shengwei Shi, Junbiao Peng, Jian LinAbstract:We realized an organic electrical memory device with a simple structure based on single layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable device with an ON/OFF current ratio as high as nearly 1000000 which was two orders of magnitude higher than previous results, and the storage time was more than 576 hrs. The current transition process is attributed to the formation and damage of the interface dipole at different electric fields, in which the current conduction showed a transition from Ohmic conductive current to Fowler–Nordheim Tunnelling current. After the transition from ON state to OFF state, the device tended to remain in OFF state even when the applied voltage was removed, which indicated that the device was very promising for write-once read-many-times (WORM) memory.
J A Ooi - One of the best experts on this subject based on the ideXlab platform.
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The effects of polysilicon dopant depletion and Fowler - Nordheim Tunnelling on the characteristics of ? polysilicon - oxide - silicon capacitors
Semiconductor Science and Technology, 1997Co-Authors: C H Ling, D S Ang, J A OoiAbstract:High-frequency and quasi-static capacitance measurements are made on both polycided and non-polycided metal-oxide-semiconductor (MOS) capacitors, fabricated on n- or p-well silicon. The thickening of the gate oxide and the depletion of dopants from the polysilicon gate, following the polycidation process, are observed. The role of minority carriers in the polysilicon, under reverse bias, is demonstrated through frequency and temperature measurements. Deep depletion is observed in the silicon well, when the silicon is swept into reverse bias, at a rate as low as . This is attributed to an insufficient generation of minority carriers, due to the limited volume in the shallow well. A sharp decrease in both high-frequency and quasi-static capacitances at an oxide field is observed for capacitors on the p-well silicon. This observation is attributed to significant Fowler - Nordheim Tunnelling of inversion carriers, limiting the formation of the inversion layer and thereby causing the silicon substrate to enter deep depletion.
Danilo Pescia - One of the best experts on this subject based on the ideXlab platform.
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Scaling properties of a non-Fowler–Nordheim Tunnelling junction
Proceedings of the Royal Society A: Mathematical Physical and Engineering Sciences, 2014Co-Authors: Andreas Kyritsakis, J. P. Xanthakis, Danilo PesciaAbstract:We have theoretically explained the experimentally observed scaling properties of the current–voltage (I–V) characteristics of a field-emission Tunnelling diode with respect to the tip–anode distance d . All the I–V curves for different d -values collapse onto a single curve by a scaling transformation that keeps the electrical field at a given direction constant for different d . Our proof is applicable to more than just the obvious case where the electrostatic potential varies linearly with the distance from the cathode x (and the Fowler–Nordheim plot is also linear). It applies to any general nonlinear potential encountered in emitting tips of small radii of curvature R . Furthermore, we explain why the scaling property is excellent at d ≫ R , but deteriorates when d ∼ R . The scaling property is shown to derive from the simultaneous action of two factors: (i) in a Taylor expansion of the potential in the Tunnelling region, the second-order coefficient is found to be proportional to the first-order coefficient and their ratio independent of d . (ii) The angular variation of the electric field is independent of d for d ≫ R . Deviations from scaling at d ∼ R are attributed to both the dependence on d of the angular variation of the electrical field and/or the presence of a third-order term.
Emil V. Jelenković - One of the best experts on this subject based on the ideXlab platform.
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Effect of implanted fluorine on MOS structures with sputtered SiO2 insulator
Semiconductor Science and Technology, 1994Co-Authors: Emil V. Jelenković, K Y Tong, M C Poon, J S L WongAbstract:Fluorine was introduced by ion implantation into MOS structures with sputtered oxide. After annealing, its effects on the high-frequency C-V curve and Fowler-Nordheim Tunnelling barrier height were studied. An increase of acceptor dopant concentration in the substrate was observed due to the fluorine implantation. The presence of fluorine increased the Fowler-Nordheim Tunnelling barrier height for electron injection from both metal and silicon. The role of fluorine is explained by a physical model similar to that used by Ma, where fluorine is assumed to bond with trivalent silicon trap centres in the sputtered oxide.
