The Experts below are selected from a list of 312 Experts worldwide ranked by ideXlab platform
Hiroshi Inoue - One of the best experts on this subject based on the ideXlab platform.
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A study on Frequency Dispersion of transmission characteristics of shielded-flexible printed circuits
2017 International Conference on Electronics Packaging (ICEP), 2017Co-Authors: Yoshiki Kayano, Hiroshi InoueAbstract:In this paper, a Frequency Dispersion of transmission characteristics of shielded-flexible printed circuits (FPC) for differential-signaling is studied experimentally and numerical modeling. Firstly, differential-mode impedance, the mixed-mode scattering parameters and eye-diagram are discussed. Secondly, Frequency Dispersion of transmission characteristics is discussed by using RLGC equivalent-circuit model. The insufficient shielding performance for near magnetic field increases both the inductance and resistance. As the Frequency becomes lower, DM impedance increases and propagation velocity decreases. Consequently, the Frequency response has relatively large Frequency Dispersion.
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Identifying Frequency Dispersion of transmission characteristics of shielded-flexible printed circuits
2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE, 2017Co-Authors: Yoshiki Kayano, Hiroshi InoueAbstract:In this paper, a Frequency Dispersion of transmission characteristics of shielded-flexible printed circuits (FPC) for differential-signaling is studied experimentally and numerical modeling based on an equivalent circuit model. Firstly, differential-mode impedance, the mixed-mode scattering parameters and eye-diagram are discussed. Secondly, the Frequency Dispersion of the transmission characteristics is discussed by using the RLGC equivalent-circuit model. The insufficient shielding performance for near magnetic field increases both the inductance and resistance. As the Frequency becomes lower, DM impedance increases and propagation velocity decreases. Consequently, the Frequency response has relatively large Frequency Dispersion. Finally, the resistance due to the thin conductive shield is studied. As the results, the resistance due to the thin conductive shield at lower frequencies is smaller than that in the “thick conductive shield” case.
Eric M Vogel - One of the best experts on this subject based on the ideXlab platform.
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comparison of n type and p type gaas oxide growth and its effects on Frequency Dispersion characteristics
Applied Physics Letters, 2008Co-Authors: Christopher L Hinkle, A M Sonnet, M Milojevic, F S Aguirretostado, Robert M Wallace, Eric M VogelAbstract:The electrical characteristics of n- and p-type gallium arsenide (GaAs) capacitors show a striking difference in the “accumulation” capacitance Frequency Dispersion. This difference has been attributed by some to a variation in the oxide growth, possibly due to photoelectrochemical properties of the two substrates. We show that the oxide growth on n- and p-type GaAs substrates is identical when exposed to identical environmental and chemical conditions while still maintaining the diverse electrical characteristics. The difference in electron and hole trap time constants is suggested as the source of the disparity of the Frequency Dispersion for n-type versus p-type GaAs devices.
Yoshiki Kayano - One of the best experts on this subject based on the ideXlab platform.
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A study on Frequency Dispersion of transmission characteristics of shielded-flexible printed circuits
2017 International Conference on Electronics Packaging (ICEP), 2017Co-Authors: Yoshiki Kayano, Hiroshi InoueAbstract:In this paper, a Frequency Dispersion of transmission characteristics of shielded-flexible printed circuits (FPC) for differential-signaling is studied experimentally and numerical modeling. Firstly, differential-mode impedance, the mixed-mode scattering parameters and eye-diagram are discussed. Secondly, Frequency Dispersion of transmission characteristics is discussed by using RLGC equivalent-circuit model. The insufficient shielding performance for near magnetic field increases both the inductance and resistance. As the Frequency becomes lower, DM impedance increases and propagation velocity decreases. Consequently, the Frequency response has relatively large Frequency Dispersion.
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Identifying Frequency Dispersion of transmission characteristics of shielded-flexible printed circuits
2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE, 2017Co-Authors: Yoshiki Kayano, Hiroshi InoueAbstract:In this paper, a Frequency Dispersion of transmission characteristics of shielded-flexible printed circuits (FPC) for differential-signaling is studied experimentally and numerical modeling based on an equivalent circuit model. Firstly, differential-mode impedance, the mixed-mode scattering parameters and eye-diagram are discussed. Secondly, the Frequency Dispersion of the transmission characteristics is discussed by using the RLGC equivalent-circuit model. The insufficient shielding performance for near magnetic field increases both the inductance and resistance. As the Frequency becomes lower, DM impedance increases and propagation velocity decreases. Consequently, the Frequency response has relatively large Frequency Dispersion. Finally, the resistance due to the thin conductive shield is studied. As the results, the resistance due to the thin conductive shield at lower frequencies is smaller than that in the “thick conductive shield” case.
L. Martens - One of the best experts on this subject based on the ideXlab platform.
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Investigation of the Frequency Dispersion effect in the Root-model applied to conventional and floating-gate MESFETs
IEEE Transactions on Electron Devices, 1997Co-Authors: S. Van Den Bosch, L. MartensAbstract:This paper investigates measurement and modeling aspects of Frequency Dispersion effects for GaAs MESFETs. The well-known Root-model's ability to simulate Frequency Dispersion is evaluated versus measurements. We propose an alternative Frequency weighting function that can easily be implemented in the MDS-system. We also investigate the validity of this approach for "floating-gate" MESFETs and present, for the first time to our knowledge, measurement results for Frequency Dispersion in this type of device.
Jerchyi Wang - One of the best experts on this subject based on the ideXlab platform.
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excellent Frequency Dispersion of thin gadolinium oxide high k gate dielectrics
Applied Physics Letters, 2005Co-Authors: Chaosung Liao, Chunlin Chen, Kuanti Wang, Jerchyi WangAbstract:In this letter, we reported a high-k gadolinium oxide (Gd2O3) gate dielectric formed by reactive rf sputtering. It is found that the Gd2O3 gate dielectric film exhibits excellent electrical properties such as low leakage current density, high breakdown voltage, and almost no hysteresis and Frequency Dispersion in C‐V curves comparable to that of HfO2 film. This indicates that postprocessing treatments can reduce a large amount of interface trap and can passivate a large amount of trapped charge at defect sites.