The Experts below are selected from a list of 343251 Experts worldwide ranked by ideXlab platform
H Iwai - One of the best experts on this subject based on the ideXlab platform.
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Future Perspective and scaling down roadmap for rf cmos
Symposium on VLSI Circuits, 1999Co-Authors: E Morifuji, H S Momose, T Ohguro, T Yoshitomi, H Kimijima, F Matsuoka, M Kinugawa, Y Katsumata, H IwaiAbstract:Concept of Future scaling-down for RF CMOS has been investigated in terms of fT, fmax, RF noise, linearity, and matching characteristics, based on simulation and experiments. It has been found that gate width and finger length are the key parameters especially in sub-100 nm gate length generations.
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Future Perspective and scaling down roadmap for rf cmos
Symposium on VLSI Technology, 1999Co-Authors: E Morifuji, H S Momose, T Ohguro, T Yoshitomi, H Kimijima, F Matsuoka, M Kinugawa, Y Katsumata, H IwaiAbstract:The concept of Future scaling-down for RF CMOS technology has been investigated in terms of f/sub T/, f/sub max/, RF noise, linearity, and matching characteristics, based on simulation and experiments. It has been found that gate width and finger length are key parameters, especially in sub-100 nm gate length generations.
Carlmikael Zetterling - One of the best experts on this subject based on the ideXlab platform.
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sic power devices present status applications and Future Perspective
International Symposium on Power Semiconductor Devices and IC's, 2011Co-Authors: Mikael Ostling, Reza Ghandi, Carlmikael ZetterlingAbstract:Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. Recently Schottky diodes are offered by both USA and Europe based companies. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now available on the commercial market. The interest is rapidly growing for these devices in high power and high temperature applications. The main advantages of wide bandgap semiconductors are their very high critical electric field capability. From a power device Perspective the high critical field strength can be used to design switching devices with much lower losses than conventional silicon based devices both for on-state losses and reduced switching losses. This paper reviews the current state of the art in active switching device performance for both SiC and GaN. SiC material quality and epitaxy processes have greatly improved and degradation free 100 mm wafers are readily available. The SiC wafer roadmap looks very favorable as volume production takes off. For GaN materials the main application area is geared towards the lower power rating level up to 1 kV on mostly lateral FET designs. Power module demonstrations are beginning to appear in scientific reports and real applications. A short review is therefore given. Other advantages of SiC is the possibility of high temperature operation (> 300 °C) and in radiation hard environments, which could offer considerable system advantages.
E Morifuji - One of the best experts on this subject based on the ideXlab platform.
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Future Perspective and scaling down roadmap for rf cmos
Symposium on VLSI Circuits, 1999Co-Authors: E Morifuji, H S Momose, T Ohguro, T Yoshitomi, H Kimijima, F Matsuoka, M Kinugawa, Y Katsumata, H IwaiAbstract:Concept of Future scaling-down for RF CMOS has been investigated in terms of fT, fmax, RF noise, linearity, and matching characteristics, based on simulation and experiments. It has been found that gate width and finger length are the key parameters especially in sub-100 nm gate length generations.
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Future Perspective and scaling down roadmap for rf cmos
Symposium on VLSI Technology, 1999Co-Authors: E Morifuji, H S Momose, T Ohguro, T Yoshitomi, H Kimijima, F Matsuoka, M Kinugawa, Y Katsumata, H IwaiAbstract:The concept of Future scaling-down for RF CMOS technology has been investigated in terms of f/sub T/, f/sub max/, RF noise, linearity, and matching characteristics, based on simulation and experiments. It has been found that gate width and finger length are key parameters, especially in sub-100 nm gate length generations.
Mikael Ostling - One of the best experts on this subject based on the ideXlab platform.
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sic power devices present status applications and Future Perspective
International Symposium on Power Semiconductor Devices and IC's, 2011Co-Authors: Mikael Ostling, Reza Ghandi, Carlmikael ZetterlingAbstract:Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. Recently Schottky diodes are offered by both USA and Europe based companies. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now available on the commercial market. The interest is rapidly growing for these devices in high power and high temperature applications. The main advantages of wide bandgap semiconductors are their very high critical electric field capability. From a power device Perspective the high critical field strength can be used to design switching devices with much lower losses than conventional silicon based devices both for on-state losses and reduced switching losses. This paper reviews the current state of the art in active switching device performance for both SiC and GaN. SiC material quality and epitaxy processes have greatly improved and degradation free 100 mm wafers are readily available. The SiC wafer roadmap looks very favorable as volume production takes off. For GaN materials the main application area is geared towards the lower power rating level up to 1 kV on mostly lateral FET designs. Power module demonstrations are beginning to appear in scientific reports and real applications. A short review is therefore given. Other advantages of SiC is the possibility of high temperature operation (> 300 °C) and in radiation hard environments, which could offer considerable system advantages.
Bagher Larijani - One of the best experts on this subject based on the ideXlab platform.
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Microbiota research in Iran; current knowledge and Future Perspective
Journal of Diabetes & Metabolic Disorders, 2021Co-Authors: Hanieh-sadat Ejtahed, Shirin Hasani-ranjbar, Ahmad-reza Soroush, Seyed-davar Siadat, Bagher LarijaniAbstract:Objective As the gut microbiota has attracted considerable attention in recent years, the aim of the present study is introducing a new microbiota research group at Endocrinology and Metabolism Research Institute (EMRI) that collaborates with national and international research centers for microbiome research projects management. Methods All the documents from EMRI focused on the microbiota field were collected using PubMed, Scopus, and Web of Science electronic databases from the inception up to June 2020. Results Findings of the EMRI research projects on the microbiota field were reviewed in this study and we highlighted some specific primary results of gut microbiota composition in the Iranian population. Moreover, applications of the developed Microbiota Database are introduced. Conclusion Enhancement of investment in this field and interdisciplinary collaborations are needed to progress our knowledge about the Iranian gut microbiota composition and develop microbiota modulating interventions over the next decade.
