Gaas Heterostructures

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Venkatesh Narayanamurti - One of the best experts on this subject based on the ideXlab platform.

  • conduction band offsets in ordered gainp Gaas Heterostructures studied by ballistic electron emission microscopy
    Applied Physics Letters, 1996
    Co-Authors: John J Oshea, Steven P. Denbaars, M A Chin, C. M. Reaves, Venkatesh Narayanamurti
    Abstract:

    Ordered‐GaInP/Gaas Heterostructures have been studied using ballistic‐electron‐emission microscopy (BEEM). The GaInP/Gaas conduction band offset was found to decrease with increasing order. Samples were grown simultaneously on different misoriented substrates to vary the degree of order in the GaInP. Concurrent scanning tunneling microscopy and BEEM images show ridge structures in the topography and contrast in the BEEM current that may correspond to ordered domains in the GaInP. Room temperature conduction band offsets of 137 and 86 meV were measured using BEEM spectroscopy for GaInP with 2 K band gaps of 1.97 and 1.89 eV, respectively.

  • Conduction band offsets in ordered‐GaInP/Gaas Heterostructures studied by ballistic‐electron‐emission microscopy
    Applied Physics Letters, 1996
    Co-Authors: James J. O’shea, Steven P. Denbaars, M A Chin, C. M. Reaves, Venkatesh Narayanamurti
    Abstract:

    Ordered‐GaInP/Gaas Heterostructures have been studied using ballistic‐electron‐emission microscopy (BEEM). The GaInP/Gaas conduction band offset was found to decrease with increasing order. Samples were grown simultaneously on different misoriented substrates to vary the degree of order in the GaInP. Concurrent scanning tunneling microscopy and BEEM images show ridge structures in the topography and contrast in the BEEM current that may correspond to ordered domains in the GaInP. Room temperature conduction band offsets of 137 and 86 meV were measured using BEEM spectroscopy for GaInP with 2 K band gaps of 1.97 and 1.89 eV, respectively.

S. N. Chebotarev - One of the best experts on this subject based on the ideXlab platform.

  • Variation of the photoluminescence spectrum of InAs/Gaas Heterostructures grown by ion-beam deposition
    Beilstein Journal of Nanotechnology, 2018
    Co-Authors: A S Pashchenko, L. S. Lunin, Eleonora M Danilina, S. N. Chebotarev
    Abstract:

    This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of Gaas potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/Gaas Heterostructures. The experimental samples were grown by ion-beam deposition. We showed that using three vertically stacked layers of InAs quantum dots separated by thin Gaas barrier layers was accompanied by a red-shift of the photoluminescence peak of InAs/Gaas Heterostructures. An increase in the thickness of the Gaas barrier layers was accompanied by a blue shift of the photoluminescence peak. The effect of isovalent Bi doping of the Gaas barrier layers on the structural and optical properties of the InAs/Gaas Heterostructures was investigated. It was found that the Bi content up to 4.96 atom % in Gaas decreases the density of InAs quantum dots from 1.53 × 1010 to 0.93 × 1010 cm−2. In addition, the average lateral size of the InAs quantum dots increased from 14 to 20 nm, due to an increase in the surface diffusion of In. It is shown that isovalent doping of Gaas potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV.

  • variation of the photoluminescence spectrum of inas Gaas Heterostructures grown by ion beam deposition
    Beilstein Journal of Nanotechnology, 2018
    Co-Authors: A S Pashchenko, L. S. Lunin, Eleonora M Danilina, S. N. Chebotarev
    Abstract:

    This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of Gaas potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/Gaas Heterostructures. The experimental samples were grown by ion-beam deposition. We showed that using three vertically stacked layers of InAs quantum dots separated by thin Gaas barrier layers was accompanied by a red-shift of the photoluminescence peak of InAs/Gaas Heterostructures. An increase in the thickness of the Gaas barrier layers was accompanied by a blue shift of the photoluminescence peak. The effect of isovalent Bi doping of the Gaas barrier layers on the structural and optical properties of the InAs/Gaas Heterostructures was investigated. It was found that the Bi content up to 4.96 atom % in Gaas decreases the density of InAs quantum dots from 1.53 × 1010 to 0.93 × 1010 cm-2. In addition, the average lateral size of the InAs quantum dots increased from 14 to 20 nm, due to an increase in the surface diffusion of In. It is shown that isovalent doping of Gaas potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV.

  • Investigation of the Structural Perfection of Thin-Film InAlGaPAs/Gaas Heterostructures
    Journal of Surface Investigation-x-ray Synchrotron and Neutron Techniques, 2018
    Co-Authors: D. L. Alfimova, L. S. Lunin, M. L. Lunina, A. E. Kazakova, S. N. Chebotarev, A S Pashchenko, D. A. Arustamyan
    Abstract:

    The influence of growth conditions on the structural perfection of thin-film InAlGaPAs/Gaas Heterostructures is discussed. The main determined growth parameters are the growth temperature and its gradient, liquid-zone thickness, matching between lattice parameters and the thermal expansion coefficients of the layer and substrate, and dislocation density in the substrate.

  • Growth and properties of isoparametric InAlGaPAs/Gaas Heterostructures
    Semiconductors, 2017
    Co-Authors: D. L. Alfimova, L. S. Lunin, M. L. Lunina, D. A. Arustamyan, A. E. Kazakova, S. N. Chebotarev
    Abstract:

    The results obtained in the growth of isoparametric InAlGaPAs/Gaas Heterostructures are discussed. The composition, structural quality, and luminescence properties of the Heterostructures are studied.

  • a study of photosensitive inas Gaas Heterostructures with quantum dots grown by ion beam deposition
    Journal of Surface Investigation-x-ray Synchrotron and Neutron Techniques, 2011
    Co-Authors: L. S. Lunin, D. L. Alfimova, S. N. Chebotarev, I A Sysoev, A S Pashchenko
    Abstract:

    The possibility of obtaining ion-beam-deposited InAs/Gaas Heterostructures with quantum dots for photovoltaic converters is shown. The surface morphology of the grown Heterostructures is analyzed by scanning probe microscopy. Quantum dots and InAs nanoclusters with planar dimensions from 20 to 100 nm and a height from 5 to 80 nm are detected. The average surface density of quantum-dimensional InAs objects with a size below 35 nm is 105 mm−2. In the photoluminescence spectra (T = 300 K), a peak is revealed with a maximum at the wavelength λ = 1150 nm (hν ≈ 1.1 eV), which shows that the grown Heterostructures contain InAs quantum dots of various sizes.

Anna Fontcuberta I Morral - One of the best experts on this subject based on the ideXlab platform.

  • catalyst free nanowires with axial inxga1 xas Gaas Heterostructures
    Nanotechnology, 2009
    Co-Authors: Martin Heiss, Anders Gustafsson, Sonia Conesaboj, F Peiro, J R Morante, G Abstreiter, Jordi Arbiol, Lars Samuelson, Anna Fontcuberta I Morral
    Abstract:

    Self-catalyzed growth of axial InxGa1-xAs/Gaas Heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the growth it was possible to vary the effective indium content up to x = 5%, as deduced from photoluminescence measurements. We have analyzed the dependence of the alloy concentration on the growth conditions and present a simple model for the growth. The Heterostructures grown with the method presented were spatially mapped along the wires with confocal microphotoluminescence and cathodoluminescence. It was found as expected that the emission of Gaas/InxGa1-xAs/Gaas Heterostructures is localized. This work is important for the use of an external catalyst-free growth of complex axial Heterostructures and related opto-electronic devices that facilitates its possible integration in the device or system fabrication processes.

  • Catalyst-free nanowires with axial InxGa1-xAs/Gaas Heterostructures
    Nanotechnology, 2009
    Co-Authors: Martin Heiss, Anders Gustafsson, F Peiro, J R Morante, G Abstreiter, Jordi Arbiol, Lars Samuelson, Sonia Conesa-boj, Anna Fontcuberta I Morral
    Abstract:

    Self-catalyzed growth of axial InxGa1-xAs/Gaas Heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the growth it was possible to vary the effective indium content up to x = 5%, as deduced from photoluminescence measurements. We have analyzed the dependence of the alloy concentration on the growth conditions and present a simple model for the growth. The Heterostructures grown with the method presented were spatially mapped along the wires with confocal microphotoluminescence and cathodoluminescence. It was found as expected that the emission of Gaas/InxGa1-xAs/Gaas Heterostructures is localized. This work is important for the use of an external catalyst-free growth of complex axial Heterostructures and related opto-electronic devices that facilitates its possible integration in the device or system fabrication processes.

A S Pashchenko - One of the best experts on this subject based on the ideXlab platform.

  • variation of the photoluminescence spectrum of inas Gaas Heterostructures grown by ion beam deposition
    Beilstein Journal of Nanotechnology, 2018
    Co-Authors: A S Pashchenko, L. S. Lunin, Eleonora M Danilina, S. N. Chebotarev
    Abstract:

    This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of Gaas potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/Gaas Heterostructures. The experimental samples were grown by ion-beam deposition. We showed that using three vertically stacked layers of InAs quantum dots separated by thin Gaas barrier layers was accompanied by a red-shift of the photoluminescence peak of InAs/Gaas Heterostructures. An increase in the thickness of the Gaas barrier layers was accompanied by a blue shift of the photoluminescence peak. The effect of isovalent Bi doping of the Gaas barrier layers on the structural and optical properties of the InAs/Gaas Heterostructures was investigated. It was found that the Bi content up to 4.96 atom % in Gaas decreases the density of InAs quantum dots from 1.53 × 1010 to 0.93 × 1010 cm-2. In addition, the average lateral size of the InAs quantum dots increased from 14 to 20 nm, due to an increase in the surface diffusion of In. It is shown that isovalent doping of Gaas potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV.

  • Variation of the photoluminescence spectrum of InAs/Gaas Heterostructures grown by ion-beam deposition
    Beilstein Journal of Nanotechnology, 2018
    Co-Authors: A S Pashchenko, L. S. Lunin, Eleonora M Danilina, S. N. Chebotarev
    Abstract:

    This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of Gaas potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/Gaas Heterostructures. The experimental samples were grown by ion-beam deposition. We showed that using three vertically stacked layers of InAs quantum dots separated by thin Gaas barrier layers was accompanied by a red-shift of the photoluminescence peak of InAs/Gaas Heterostructures. An increase in the thickness of the Gaas barrier layers was accompanied by a blue shift of the photoluminescence peak. The effect of isovalent Bi doping of the Gaas barrier layers on the structural and optical properties of the InAs/Gaas Heterostructures was investigated. It was found that the Bi content up to 4.96 atom % in Gaas decreases the density of InAs quantum dots from 1.53 × 1010 to 0.93 × 1010 cm−2. In addition, the average lateral size of the InAs quantum dots increased from 14 to 20 nm, due to an increase in the surface diffusion of In. It is shown that isovalent doping of Gaas potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV.

  • Investigation of the Structural Perfection of Thin-Film InAlGaPAs/Gaas Heterostructures
    Journal of Surface Investigation-x-ray Synchrotron and Neutron Techniques, 2018
    Co-Authors: D. L. Alfimova, L. S. Lunin, M. L. Lunina, A. E. Kazakova, S. N. Chebotarev, A S Pashchenko, D. A. Arustamyan
    Abstract:

    The influence of growth conditions on the structural perfection of thin-film InAlGaPAs/Gaas Heterostructures is discussed. The main determined growth parameters are the growth temperature and its gradient, liquid-zone thickness, matching between lattice parameters and the thermal expansion coefficients of the layer and substrate, and dislocation density in the substrate.

  • a study of photosensitive inas Gaas Heterostructures with quantum dots grown by ion beam deposition
    Journal of Surface Investigation-x-ray Synchrotron and Neutron Techniques, 2011
    Co-Authors: L. S. Lunin, D. L. Alfimova, S. N. Chebotarev, I A Sysoev, A S Pashchenko
    Abstract:

    The possibility of obtaining ion-beam-deposited InAs/Gaas Heterostructures with quantum dots for photovoltaic converters is shown. The surface morphology of the grown Heterostructures is analyzed by scanning probe microscopy. Quantum dots and InAs nanoclusters with planar dimensions from 20 to 100 nm and a height from 5 to 80 nm are detected. The average surface density of quantum-dimensional InAs objects with a size below 35 nm is 105 mm−2. In the photoluminescence spectra (T = 300 K), a peak is revealed with a maximum at the wavelength λ = 1150 nm (hν ≈ 1.1 eV), which shows that the grown Heterostructures contain InAs quantum dots of various sizes.

John J Oshea - One of the best experts on this subject based on the ideXlab platform.

  • conduction band offsets in ordered gainp Gaas Heterostructures studied by ballistic electron emission microscopy
    Applied Physics Letters, 1996
    Co-Authors: John J Oshea, Steven P. Denbaars, M A Chin, C. M. Reaves, Venkatesh Narayanamurti
    Abstract:

    Ordered‐GaInP/Gaas Heterostructures have been studied using ballistic‐electron‐emission microscopy (BEEM). The GaInP/Gaas conduction band offset was found to decrease with increasing order. Samples were grown simultaneously on different misoriented substrates to vary the degree of order in the GaInP. Concurrent scanning tunneling microscopy and BEEM images show ridge structures in the topography and contrast in the BEEM current that may correspond to ordered domains in the GaInP. Room temperature conduction band offsets of 137 and 86 meV were measured using BEEM spectroscopy for GaInP with 2 K band gaps of 1.97 and 1.89 eV, respectively.